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Transistoren - Bipolar (BJT) - HF

Aufzeichnungen 1.633
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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MRF8372GR2
Microsemi Corporation

TRANS NPN 16V 200MA SO8

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 870MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB ~ 9.5dB
  • Power - Max: 2.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager2.100
16V
870MHz
-
8dB ~ 9.5dB
2.2W
30 @ 50mA, 5V
200mA
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
MRF4427
Microsemi Corporation

TRANS NPN 20V 400MA SO8

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 20dB
  • Power - Max: 1.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager3.760
20V
-
-
20dB
1.5W
10 @ 10mA, 5V
400mA
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot 2SC4536-T1-AZ
CEL

RF TRANSISTOR NPN SOT-89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 2dB @ 1GHz
  • Gain: 7dB
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
  • Current - Collector (Ic) (Max): 250mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
Paket: TO-243AA
Lager221.112
15V
5.5GHz
2dB @ 1GHz
7dB
2W
40 @ 50mA, 10V
250mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
MS1337
Microsemi Corporation

TRANS RF BIPO 70W 8A M113

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 175MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 70W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M113
  • Supplier Device Package: M113
Paket: M113
Lager3.568
18V
175MHz
-
10dB
70W
20 @ 250mA, 5V
8A
200°C (TJ)
Chassis Mount
M113
M113
MAX2601ESA-T
Maxim Integrated

TRANS RF NPN 900MHZ 15V 8SOIC

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1GHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
  • Gain: 11.6dB
  • Power - Max: 6.4W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
  • Current - Collector (Ic) (Max): 1.2A
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
Paket: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Lager2.416
15V
1GHz
3.3dB @ 836MHz
11.6dB
6.4W
100 @ 250mA, 3V
1.2A
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
AT-64000-GP4
Broadcom Limited

TRANSISTOR NPN BIPOLAR CHIP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 110mA, 8V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: -
Paket: Die
Lager3.344
20V
-
-
-
3W
20 @ 110mA, 8V
200mA
200°C (TJ)
Surface Mount
Die
-
hot AT-41586-BLKG
Broadcom Limited

TRANS NPN BIPO 12V 60MA 86-SMD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz
  • Gain: 8dB ~ 17dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 60mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-86
  • Supplier Device Package: 86 Plastic
Paket: SOT-86
Lager12.960
12V
8GHz
1.4dB ~ 3dB @ 1GHz ~ 4GHz
8dB ~ 17dB
500mW
30 @ 10mA, 8V
60mA
150°C (TJ)
Surface Mount
SOT-86
86 Plastic
NE85633-R25-A
CEL

RF TRANSISTOR NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 11.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
Paket: TO-236-3, SC-59, SOT-23-3
Lager5.840
12V
7GHz
1.1dB @ 1GHz
11.5dB
200mW
125 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
NE85630-R24-A
CEL

RF TRANSISTOR NPN SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
Paket: SC-70, SOT-323
Lager5.360
12V
4.5GHz
1.2dB @ 1GHz
9dB
150mW
70 @ 7mA, 3V
100mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
KSC2786RTA
Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92S

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
  • Gain: 18dB ~ 22dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
  • Supplier Device Package: TO-92S
Paket: TO-226-3, TO-92-3 Short Body (Formed Leads)
Lager3.168
20V
600MHz
3dB ~ 5dB @ 100MHz
18dB ~ 22dB
250mW
40 @ 1mA, 6V
20mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Short Body (Formed Leads)
TO-92S
NE68833-A
CEL

TRANS NPN 2GHZ SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.7dB ~ 2.5dB @ 2GHz
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
Paket: TO-236-3, SC-59, SOT-23-3
Lager3.344
6V
4.5GHz
1.7dB ~ 2.5dB @ 2GHz
-
200mW
80 @ 3mA, 1V
100mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot UPA814T-T1
CEL

TRANS NPN HF FT=9GHZ SOT-363

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-SO
Paket: 6-TSSOP, SC-88, SOT-363
Lager6.000
6V
9GHz
1.5dB @ 2GHz
-
200mW
80 @ 3mA, 1V
100mA
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-SO
S200-50
Microsemi Corporation

TRANS RF BIPO 110V 30A 55HX

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 110V
  • Frequency - Transition: 1.5MHz ~ 30MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 12dB ~ 14.5dB
  • Power - Max: 320W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 30A
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55HX
  • Supplier Device Package: 55HX
Paket: 55HX
Lager3.280
110V
1.5MHz ~ 30MHz
-
12dB ~ 14.5dB
320W
10 @ 1A, 5V
30A
150°C (TJ)
Chassis Mount
55HX
55HX
MS1336
Microsemi Corporation

TRANS RF BIPO 70W 8A M135

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 175MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 70W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: M135
  • Supplier Device Package: M135
Paket: M135
Lager6.688
18V
175MHz
-
10dB
70W
20 @ 250mA, 5V
8A
200°C (TJ)
Chassis, Stud Mount
M135
M135
MS1649
Microsemi Corporation

TRANS RF BIPO 7.8W 470MHZ TO39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 470MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.5dB
  • Power - Max: 7.8W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
Paket: TO-205AD, TO-39-3 Metal Can
Lager3.456
16V
470MHz
-
9.5dB
7.8W
20 @ 100mA, 5V
1A
200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
SRF4427
Microsemi Corporation

TRANS RF BIPO 1.5W 400MA 8SOIC

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 1.3GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 17dB ~ 18dB
  • Power - Max: 1.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager2.672
18V
1.3GHz
-
17dB ~ 18dB
1.5W
20 @ 150mA, 5V
400mA
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
BFT93W,115
NXP

TRANS PNP 12V 50MA SOT323

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4GHz
  • Noise Figure (dB Typ @ f): 2.4dB ~ 3dB @ 500MHz ~ 1GHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 30mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
Paket: SC-70, SOT-323
Lager6.784
12V
4GHz
2.4dB ~ 3dB @ 500MHz ~ 1GHz
-
300mW
20 @ 30mA, 5V
50mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
NSVF4009SG4T1G
ON Semiconductor

TRANS NPN 3.5V 40MA 4MCPH

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 2GHz
  • Gain: 17dB
  • Power - Max: 120mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-MCPH
Paket: 4-SMD, Flat Leads
Lager3.136
3.5V
25GHz
1.1dB @ 2GHz
17dB
120mW
50 @ 5mA, 1V
40mA
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-MCPH
CPH6021-TL-H
ON Semiconductor

TRANS PNP BIPO 100MA 12V CPH6

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 14dB @ 1GHz
  • Power - Max: 700mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-CPH
Paket: SC-74, SOT-457
Lager6.128
12V
10GHz
1.2dB @ 1GHz
14dB @ 1GHz
700mW
60 @ 50mA, 5V
100mA
150°C (TJ)
Surface Mount
SC-74, SOT-457
6-CPH
hot 2SC4713KT146R
Rohm Semiconductor

TRANS RF SW 6V 50MA SMT3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3
Paket: TO-236-3, SC-59, SOT-23-3
Lager15.624
6V
800MHz
-
-
200mW
180 @ 5mA, 5V
50mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3
BFP405H6327XTSA1
Infineon Technologies

TRANS RF NPN 4.5V 25MA SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
  • Gain: 23dB
  • Power - Max: 75mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
Paket: SC-82A, SOT-343
Lager6.336
5V
25GHz
1.25dB @ 1.8GHz
23dB
75mW
60 @ 5mA, 4V
25mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
BFR 460L3 E6327
Infineon Technologies

TRANS RF NPN 5.8V 50MA 3TSLP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.8V
  • Frequency - Transition: 22GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 1.35dB @ 1.8GHz ~ 3GHz
  • Gain: 16dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
Paket: SC-101, SOT-883
Lager2.304
5.8V
22GHz
1.1dB ~ 1.35dB @ 1.8GHz ~ 3GHz
16dB
200mW
90 @ 20mA, 3V
50mA
150°C (TJ)
Surface Mount
SC-101, SOT-883
PG-TSLP-3
hot MMBTH24-7-F
Diodes Incorporated

TRANS NPN 40V 50MA SOT23-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Frequency - Transition: 400MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 8mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager1.188.000
40V
400MHz
-
-
300mW
30 @ 8mA, 10V
50mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
hot 2N5109
Central Semiconductor Corp

TRANS RF NPN 20V 400MA TO-39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.2GHz
  • Noise Figure (dB Typ @ f): 3dB @ 200MHz
  • Gain: -
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
Paket: TO-205AD, TO-39-3 Metal Can
Lager19.092
20V
1.2GHz
3dB @ 200MHz
-
1W
40 @ 50mA, 15V
400mA
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
NTE195A
NTE Electronics, Inc

RF TRANS NPN 70V TO39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 8W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 400mA, 2V
  • Current - Collector (Ic) (Max): 1.5A
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
Paket: -
Request a Quote
70V
-
-
10dB
8W
30 @ 400mA, 2V
1.5A
-
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
HFA3128B96
Harris Corporation

ULTRA HIGH FREQUENCY TRANSISTOR

  • Transistor Type: 5 PNP
  • Voltage - Collector Emitter Breakdown (Max): 8V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
Paket: -
Request a Quote
8V
5.5GHz
3.5dB @ 1GHz
-
150mW
20 @ 10mA, 2V
65mA
175°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
MS1076A
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
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-
-
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MMBTH10LT1
onsemi

TRANS SS VHF NPN 25V SOT23

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
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CP229-2N5109-CT20
Central Semiconductor Corp

RF TRANSISTOR TO-39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.2GHz
  • Noise Figure (dB Typ @ f): 3dB @ 200MHz
  • Gain: 11dB
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
Paket: -
Request a Quote
20V
1.2GHz
3dB @ 200MHz
11dB
-
40 @ 50mA, 15V
400mA
-65°C ~ 200°C (TJ)
Surface Mount
Die
Die
CP302-MPSH10-CT
Central Semiconductor Corp

RF TRANS NPNUHF/VHF

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
Paket: -
Request a Quote
25V
650MHz
-
-
350mW
60 @ 4mA, 10V
-
-65°C ~ 150°C (TJ)
Surface Mount
Die
Die