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DI0A35N06PGK-AQ

DI0A35N06PGK-AQ

DI0A35N06PGK-AQ

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Teilenummer DI0A35N06PGK-AQ
Hersteller Diotec Semiconductor
Beschreibung MOSFET, DFN1006-3, 60V, 0.35A, 1
Datenblatt
Paket -
ECAD
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DI0A35N06PGK-AQ Spezifikationen

HerstellerDiotec Semiconductor
RubrikDiskrete Halbleiterprodukte - Transistoren - FETs, MOSFET - Einzeln
Paket-
ECAD
Serie-
FET TypN-Channel
TechnologieMOSFET (Metal Oxide)
Drain auf Source-Spannung (Vdss)60 V
Strom - Dauerablass (Id) @ 25 ° C350mA
Antriebsspannung (Max. Rds Ein, Min Rds Ein)2.5V, 10V
Vgs (th) (Max) @ Id1V @ 250µA
Gate Ladung (Qg) (Max) @ Vgs1.9 nC @ 10 V
Eingangskapazität (Ciss) (Max) @ Vds32 pF @ 25 V
Vgs (Max)±20V
FET-Eigenschaft-
Verlustleistung (Max)223mW
Rds Ein (Max) @ Id, Vgs1.4Ohm @ 500mA, 10V
Betriebstemperatur-55°C ~ 150°C (TJ)
BefestigungsartSurface Mount
LieferantengerätepaketDFN1006-3
Paket / FallSC-101, SOT-883

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    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
    (2)We are informed of the defect described above within 90 days after the delivery of DI0A35N06PGK-AQ.
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  • 7.How to contact us to get technical supports, such as DI0A35N06PGK-AQ pin diagram, DI0A35N06PGK-AQ datasheet?
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