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Diodes Incorporated Produkte - Transistoren - FETs, MOSFETs - Arrays

Aufzeichnungen 380
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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
DMC25D1UVT-7
Diodes Incorporated

MOSFET N/P-CH 25V/12V TSOT26

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 25V, 12V
  • Current - Continuous Drain (Id) @ 25°C: 500mA, 3.9A
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 10V
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
Paket: SOT-23-6 Thin, TSOT-23-6
Lager6.704
Standard
25V, 12V
500mA, 3.9A
4 Ohm @ 400mA, 4.5V
1.5V @ 250µA
0.9nC @ 10V
27.6pF @ 10V
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
DMC25D0UVT-7
Diodes Incorporated

MOSFET N/P-CH 25V/30V TSOT26

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 25V, 30V
  • Current - Continuous Drain (Id) @ 25°C: 400mA, 3.2A
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 26.2pF @ 10V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
Paket: SOT-23-6 Thin, TSOT-23-6
Lager2.128
Standard
25V, 30V
400mA, 3.2A
4 Ohm @ 400mA, 4.5V
1.5V @ 250µA
0.7nC @ 8V
26.2pF @ 10V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
DMG6301UDW-7
Diodes Incorporated

MOSFET 2N-CH 25V 0.24A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 240mA
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paket: 6-TSSOP, SC-88, SOT-363
Lager3.088
Standard
25V
240mA
4 Ohm @ 400mA, 4.5V
1.5V @ 250µA
0.36nC @ 4.5V
27.9pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot 2N7002VC-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.28A SOT-563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 280mA
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 150mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
Paket: SOT-563, SOT-666
Lager1.764.000
Standard
60V
280mA
7.5 Ohm @ 50mA, 5V
2.5V @ 250µA
-
50pF @ 25V
150mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMN2028UFDH-7
Diodes Incorporated

MOSFET 2N-CH 20V 6.8A POWERDI

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: PowerDI3030-8
Paket: 8-PowerWDFN
Lager5.456
Logic Level Gate
20V
6.8A
20 mOhm @ 4A, 10V
1V @ 250µA
8.5nC @ 4.5V
151pF @ 10V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
PowerDI3030-8
DMN2050LFDB-7
Diodes Incorporated

MOSFET 2N-CH 20V 3.3A 6UDFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V
  • Power - Max: 730mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
Paket: 6-UDFN Exposed Pad
Lager3.776
Logic Level Gate
20V
3.3A
45 mOhm @ 5A, 4.5V
1V @ 250µA
12nC @ 10V
389pF @ 10V
730mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMN2029USD-13
Diodes Incorporated

MOSFET 2N-CH 20V 5.8A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1171pF @ 10V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager6.496
Logic Level Gate
20V
5.8A
25 mOhm @ 6.5A, 4.5V
1.5V @ 250µA
18.6nC @ 8V
1171pF @ 10V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot DMN53D0LDW-7
Diodes Incorporated

MOSFET 2N-CH 50V 0.36A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 360mA
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V
  • Power - Max: 310mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paket: 6-TSSOP, SC-88, SOT-363
Lager34.800
Logic Level Gate
50V
360mA
1.6 Ohm @ 500mA, 10V
1.5V @ 250µA
0.6nC @ 4.5V
46pF @ 25V
310mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot DMG1024UV-7
Diodes Incorporated

MOSFET 2N-CH 20V 1.38A SOT563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.38A
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
  • Power - Max: 530mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
Paket: SOT-563, SOT-666
Lager36.600
Logic Level Gate
20V
1.38A
450 mOhm @ 600mA, 4.5V
1V @ 250µA
0.74nC @ 4.5V
60.67pF @ 16V
530mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMN2050LFDB-13
Diodes Incorporated

MOSFET 2N-CH 20V 3.3A 6UDFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V
  • Power - Max: 730mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
Paket: 6-UDFN Exposed Pad
Lager6.064
Logic Level Gate
20V
3.3A
45 mOhm @ 5A, 4.5V
1V @ 250µA
12nC @ 10V
389pF @ 10V
730mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMN63D8LDWQ-7
Diodes Incorporated

MOSFET 2N-CH 30V 0.22A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 220mA
  • Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paket: 6-TSSOP, SC-88, SOT-363
Lager6.992
Standard
30V
220mA
2.8 Ohm @ 250mA, 10V
1.5V @ 250µA
0.87nC @ 10V
22pF @ 25V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMN601VKQ-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.305A SOT563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 305mA
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 250mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
Paket: SOT-563, SOT-666
Lager3.360
Standard
60V
305mA
2 Ohm @ 500mA, 10V
2.5V @ 250µA
-
50pF @ 25V
250mW
-65°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hot DMC2038LVT-7
Diodes Incorporated

MOSFET N/P-CH 20V TSOT26

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.6A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V
  • Power - Max: 800mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
Paket: SOT-23-6 Thin, TSOT-23-6
Lager30.000
Logic Level Gate
20V
3.7A, 2.6A
35 mOhm @ 4A, 4.5V
1V @ 250µA
17nC @ 10V
530pF @ 10V
800mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
hot DMN63D8LV-7
Diodes Incorporated

MOSFET 2N-CH 30V 0.26A SOT563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 260mA
  • Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
  • Power - Max: 450mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
Paket: SOT-563, SOT-666
Lager48.624
Logic Level Gate
30V
260mA
2.8 Ohm @ 250mA, 10V
1.5V @ 250µA
0.87nC @ 10V
22pF @ 25V
450mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMC1015UPD-13
Diodes Incorporated

MOSFET 8V 24V POWERDI5060-8

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 6V
  • Power - Max: 2.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8
Paket: 8-PowerTDFN
Lager20.202
Standard
12V
9.5A, 6.9A
17 mOhm @ 11.8A, 4.5V
1.5V @ 250µA
15.6nC @ 4.5V
1495pF @ 6V
2.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8
hot ZXMN2AM832TA
Diodes Incorporated

MOSFET 2N-CH 20V 2.9A 8MLP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 299pF @ 15V
  • Power - Max: 1.7W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-MLP (3x2)
Paket: 8-VDFN Exposed Pad
Lager13.200
Logic Level Gate
20V
2.9A
120 mOhm @ 4A, 4.5V
700mV @ 250µA (Min)
3.1nC @ 4.5V
299pF @ 15V
1.7W
-55°C ~ 150°C (TJ)
Surface Mount
8-VDFN Exposed Pad
8-MLP (3x2)
hot 2N7002VA-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.28A SOT-563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 280mA
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 150mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
Paket: SOT-563, SOT-666
Lager2.133.000
Standard
60V
280mA
7.5 Ohm @ 50mA, 5V
2.5V @ 250µA
-
50pF @ 25V
150mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMN5L06DMKQ-7
Diodes Incorporated

MOSFET 2N-CH 50V 305MA SOT26

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 305mA
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 400mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
Paket: SOT-23-6
Lager27.246
Standard
50V
305mA
2 Ohm @ 50mA, 5V
1V @ 250µA
-
50pF @ 25V
400mW
-65°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
hot DMC3032LSD-13
Diodes Incorporated

MOSFET N/P-CH 30V 8.1A/7A 8SOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.1A, 7A
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 404.5pF @ 15V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager245.448
Logic Level Gate
30V
8.1A, 7A
32 mOhm @ 7A, 10V
2.1V @ 250µA
9.2nC @ 10V
404.5pF @ 15V
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot DMN63D0LT-7
Diodes Incorporated

MOSFET N-CH 100V SOT523

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager36.000
-
-
-
-
-
-
-
-
-
-
-
-
DMP4047SSD-13
Diodes Incorporated

MOSFET 2P-CH 40V 5.1A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1154pF @ 20V
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager25.428
Logic Level Gate
40V
5.1A
45 mOhm @ 4.4A, 10V
3V @ 250µA
21.5nC @ 10V
1154pF @ 20V
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMT3020LFDB-7
Diodes Incorporated

MOSFET 2N-CHA 30V 7.7A DFN2020

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.7A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
Paket: 6-UDFN Exposed Pad
Lager26.082
Standard
30V
7.7A
20 mOhm @ 9A, 10V
3V @ 250µA
7nC @ 10V
393pF @ 15V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMP2100UFU-7
Diodes Incorporated

MOSFET 2P-CH 20V U-DFN2030-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A
  • Rds On (Max) @ Id, Vgs: 38 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFDFN Exposed Pad
  • Supplier Device Package: U-DFN2030-6 (Type B)
Paket: 6-UFDFN Exposed Pad
Lager24.690
Standard
20V
5.7A
38 mOhm @ 3.5A, 10V
1.4V @ 250µA
21.4nC @ 10V
906pF @ 10V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UFDFN Exposed Pad
U-DFN2030-6 (Type B)
DMC31D5UDJ-7B
Diodes Incorporated

MOSFET N/P-CH 30V SOT963

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
Paket: SOT-963
Lager78.582
Logic Level Gate
30V
220mA, 200mA
1.5 Ohm @ 100mA, 4.5V
1V @ 250µA
0.38nC @ 4.5V
22.6pF @ 15V
350mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-963
SOT-963
DMN61D9UDW-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.35A

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 350mA
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 28.5pF @ 30V
  • Power - Max: 320mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paket: 6-TSSOP, SC-88, SOT-363
Lager116.616
Standard
60V
350mA
2 Ohm @ 50mA, 5V
1V @ 250µA
0.4nC @ 4.5V
28.5pF @ 30V
320mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot ZXMD63P03XTA
Diodes Incorporated

MOSFET 2P-CH 30V 8-MSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.2A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
  • Power - Max: 1.04W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
Paket: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Lager180.384
Logic Level Gate
30V
-
185 mOhm @ 1.2A, 10V
1V @ 250µA (Min)
7nC @ 10V
270pF @ 25V
1.04W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
ZXMN3AMCTA
Diodes Incorporated

MOSFET 2N-CH 30V 2.9A DFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
  • Power - Max: 1.7W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-DFN (3x2)
Paket: 8-WDFN Exposed Pad
Lager29.982
Logic Level Gate
30V
2.9A
120 mOhm @ 2.5A, 10V
3V @ 250µA
3.9nC @ 10V
190pF @ 25V
1.7W
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-DFN (3x2)
hot DMN4027SSD-13
Diodes Incorporated

MOSFET 2N-CH 40V 5.4A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager309.168
Logic Level Gate
40V
5.4A
27 mOhm @ 7A, 10V
3V @ 250µA
12.9nC @ 10V
604pF @ 20V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMN2011UFX-7
Diodes Incorporated

MOSFET 2N-CH 20V 12.2A DFN2050-4

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 10A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V
  • Power - Max: 2.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-VFDFN Exposed Pad
  • Supplier Device Package: V-DFN2050-4
Paket: 4-VFDFN Exposed Pad
Lager28.104
Standard
20V
12.2A (Ta)
9.5 mOhm @ 10A, 4.5V
1V @ 250µA
56nC @ 10V
2248pF @ 10V
2.1W
-55°C ~ 150°C (TJ)
Surface Mount
4-VFDFN Exposed Pad
V-DFN2050-4
hot DMN66D0LDW-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.115A SOT-363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 115mA
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 115mA, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paket: 6-TSSOP, SC-88, SOT-363
Lager48.958.512
Logic Level Gate
60V
115mA
5 Ohm @ 115mA, 10V
2V @ 250µA
-
23pF @ 25V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363