Diodes Incorporated Produkte - Transistoren - FETs, MOSFET - Einzeln

ZXMP6A17E6TA

Diodes Incorporated

MOSFET P-CH 60V 3A SOT-23-6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.1W (Ta)
• Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-26
• Package / Case: SOT-23-6

Paket: SOT-23-6

DMN24H3D5L-7

Diodes Incorporated

MOSFET N-CH 240V 0.48A SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 240V
• Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 188pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 760mW (Ta)
• Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 300mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

ZXM61P03FTA

Diodes Incorporated

MOSFET P-CH 30V 1.1A SOT23-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 625mW (Ta)
• Rds On (Max) @ Id, Vgs: 350 mOhm @ 600mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

ZXMP3A13FTA

Diodes Incorporated

MOSFET P-CH 30V 1.4A SOT23-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 206pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 625mW (Ta)
• Rds On (Max) @ Id, Vgs: 210 mOhm @ 1.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

DMP4051LK3-13

Diodes Incorporated

MOSFET P-CH 40V 7.2A DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.14W (Ta)
• Rds On (Max) @ Id, Vgs: 51 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

ZXMP6A13FTA

Diodes Incorporated

MOSFET P-CH 60V 0.9A SOT23-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 219pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 625mW (Ta)
• Rds On (Max) @ Id, Vgs: 400 mOhm @ 900mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

ZVP1320FTA

Diodes Incorporated

MOSFET P-CH 200V 0.035A SOT23-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 35mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 350mW (Ta)
• Rds On (Max) @ Id, Vgs: 80 Ohm @ 50mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

VN10LFTA

Diodes Incorporated

MOSFET N-CH 60V 150MA SOT23-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 330mW (Ta)
• Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

DMP3017SFG-7

Diodes Incorporated

MOSFET P-CH 30V POWERDI3333-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2246pF @ 15V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 940mW (Ta)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 11.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI3333-8
• Package / Case: 8-PowerWDFN

Paket: 8-PowerWDFN

DMG3414U-7

Diodes Incorporated

MOSFET N-CH 20V 4.2A SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 829.9pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 780mW (Ta)
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 8.2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

ZXM61N02FTA

Diodes Incorporated

MOSFET N-CH 20V 1.7A SOT23-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
• Vgs(th) (Max) @ Id: 700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 625mW (Ta)
• Rds On (Max) @ Id, Vgs: 180 mOhm @ 930mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

ZXMN3A01FTA

Diodes Incorporated

MOSFET N-CH 30V 1.8A SOT23-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 625mW (Ta)
• Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

ZXMN10A07FTA

Diodes Incorporated

MOSFET N-CH 100V 700MA SOT23-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 625mW (Ta)
• Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

DMN32D2LFB4-7

Diodes Incorporated

MOSFET N-CH 30V 300MA 3-DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 350mW (Ta)
• Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 100mA, 4V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: X2-DFN1006-3
• Package / Case: 3-XFDFN

Paket: 3-XFDFN

ZXMN2B01FTA

Diodes Incorporated

MOSFET N-CH 20V 2.1A SOT23-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 625mW (Ta)
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.4A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

DMN2300U-7

Diodes Incorporated

MOSFET N-CH 20V 1.24A SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 1.24A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 950mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 64.3pF @ 25V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 430mW (Ta)
• Rds On (Max) @ Id, Vgs: 175 mOhm @ 300mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

ZXM61P02FTA

Diodes Incorporated

MOSFET P-CH 20V 0.9A SOT23-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 625mW (Ta)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 610mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

DMP2123L-7

Diodes Incorporated

MOSFET P-CH 20V 3A SOT23-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 16V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.4W (Ta)
• Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

DMP3130L-7

Diodes Incorporated

MOSFET P-CH 30V 3.5A SOT-23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 1.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 432pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 77 mOhm @ 4.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

DMP3056L-7

Diodes Incorporated

MOSFET P-CH 30V 4.3A SOT23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 25V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 1.38W (Ta)
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

DMP2104LP-7

Diodes Incorporated

MOSFET P-CH 20V 1.5A 3-DFN

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 16V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 150 mOhm @ 950mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 3-DFN1411 (1.4x1.1)
• Package / Case: 3-XDFN

Paket: 3-XDFN

DMN1019USN-13

Diodes Incorporated

MOSFET N-CH 12V 9.3A SC59

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
• Vgs(th) (Max) @ Id: 800mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 50.6nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 2426pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 680mW (Ta)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 9.7A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-59
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

DMN3023L-7

Diodes Incorporated

MOSFET N-CH 30V 6.2A SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 873pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 900mW (Ta)
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

DMG6968U-7

Diodes Incorporated

MOSFET N-CH 20V 6.5A SOT-23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.3W (Ta)
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

DMG2302U-7

Diodes Incorporated

MOSFET N-CH 20V 4.2A SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 594.3pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 800mW (Ta)
• Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.6A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

DMN2005LP4K-7

Diodes Incorporated

MOSFET N-CH 20V 200MA 3-DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
• Vgs(th) (Max) @ Id: 900mV @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 3V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 400mW (Ta)
• Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: X2-DFN1006-3
• Package / Case: 3-XFDFN

Paket: 3-XFDFN

DMP3098L-7

Diodes Incorporated

MOSFET P-CH 30V 3.8A SOT23-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 336pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.08W (Ta)
• Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

BSS138TA

Diodes Incorporated

MOSFET N-CH 50V 200MA SOT23-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300mW (Ta)
• Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

DMN3065LW-7

Diodes Incorporated

MOSFET N-CH 30V 4A SOT-323

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 770mW (Ta)
• Rds On (Max) @ Id, Vgs: 52 mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-323
• Package / Case: SC-70, SOT-323

Paket: SC-70, SOT-323

BSS127S-7

Diodes Incorporated

MOSFET N-CH 600V 0.05A SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.08nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 21.8pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 610mW (Ta)
• Rds On (Max) @ Id, Vgs: 160 Ohm @ 16mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3