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Diodes Incorporated Produkte - PMIC - Gate-Treiber

Aufzeichnungen 80
Page  2/3
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
DGD2106S8-13
Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 8SO

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.6V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 100ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager7.040
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.6V, 2.5V
290mA, 600mA
Non-Inverting
600V
100ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DGD2104S8-13
Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 8SO

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 70ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager6.288
Synchronous
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
290mA, 600mA
Non-Inverting
600V
70ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DGD2184S8-13
Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 8SO

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 1.9A, 2.3A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 40ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager2.752
Synchronous
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
1.9A, 2.3A
Non-Inverting
600V
40ns, 20ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DGD2190S8-13
Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 8SO

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 4.5A, 4.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 25ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager6.912
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
4.5A, 4.5A
Non-Inverting
600V
25ns, 20ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DGD2101S8-13
Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 8SO

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 70ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager4.016
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
290mA, 600mA
Non-Inverting
600V
70ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DGD2104AS8-13
Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 8SO

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 210mA, 360mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 100ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager5.904
Synchronous
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
210mA, 360mA
Non-Inverting
600V
100ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DGD0507FN-7
Diodes Incorporated

IC GATE DVR HV W-DFN3030-10

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 14 V
  • Logic Voltage - VIL, VIH: 1V, 2.5V
  • Current - Peak Output (Source, Sink): 1.5A, 2.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 50V
  • Rise / Fall Time (Typ): 17ns, 13ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WFDFN Exposed Pad
  • Supplier Device Package: W-DFN3030-10
Paket: 10-WFDFN Exposed Pad
Lager4.592
Independent
2
N-Channel MOSFET
8 V ~ 14 V
1V, 2.5V
1.5A, 2.5A
Non-Inverting
50V
17ns, 13ns
-40°C ~ 150°C (TJ)
Surface Mount
10-WFDFN Exposed Pad
W-DFN3030-10
DGD2103AS8-13
Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 8SO

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 100ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager4.912
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
290mA, 600mA
Non-Inverting
600V
100ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DGD0506FN-7
Diodes Incorporated

IC GATE DVR HV W-DFN3030-10

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 14 V
  • Logic Voltage - VIL, VIH: 1V, 2.5V
  • Current - Peak Output (Source, Sink): 1.5A, 2.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 50V
  • Rise / Fall Time (Typ): 17ns, 12ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WFDFN Exposed Pad
  • Supplier Device Package: W-DFN3030-10
Paket: 10-WFDFN Exposed Pad
Lager4.224
Synchronous
2
N-Channel MOSFET
8 V ~ 14 V
1V, 2.5V
1.5A, 2.5A
Non-Inverting
50V
17ns, 12ns
-40°C ~ 150°C (TJ)
Surface Mount
10-WFDFN Exposed Pad
W-DFN3030-10
DGD2103S8-13
Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 8SO

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 100ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager7.408
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
290mA, 600mA
Non-Inverting
600V
100ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DGD2104MS8-13
Diodes Incorporated

IC GATE DRVR HV SO8

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 70ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager6.768
Synchronous
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
290mA, 600mA
Non-Inverting
600V
70ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DGD2103MS8-13
Diodes Incorporated

IC GATE DRVR HV SO8

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 70ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager7.552
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
290mA, 600mA
Non-Inverting
600V
70ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DGD1504S8-13
Diodes Incorporated

IC GATE DRVR HALF BRIDGE SO-8

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 250V
  • Rise / Fall Time (Typ): 70ns, 35ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager4.512
Synchronous
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
290mA, 600mA
Non-Inverting
250V
70ns, 35ns
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DGD0504FN-7
Diodes Incorporated

IC GATE DVR HV 10-WDFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 100V
  • Rise / Fall Time (Typ): 70ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WFDFN Exposed Pad
  • Supplier Device Package: W-DFN3030-10
Paket: 10-WFDFN Exposed Pad
Lager3.216
Synchronous
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
290mA, 600mA
Non-Inverting
100V
70ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
10-WFDFN Exposed Pad
W-DFN3030-10
DGD1503S8-13
Diodes Incorporated

IC GATE DRVR HALF BRIDGE SO-8

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 250V
  • Rise / Fall Time (Typ): 70ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager2.208
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
290mA, 600mA
Non-Inverting
250V
70ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DGD0503FN-7
Diodes Incorporated

IC GATE DVR HV 10-WDFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 100V
  • Rise / Fall Time (Typ): 70ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WFDFN Exposed Pad
  • Supplier Device Package: W-DFN3030-10
Paket: 10-WFDFN Exposed Pad
Lager2.336
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
290mA, 600mA
Non-Inverting
100V
70ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
10-WFDFN Exposed Pad
W-DFN3030-10
hot ZXGD3101N8TC
Diodes Incorporated

IC SYNCH MOSFET CNTRLR 4A 8SO

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 5 V ~ 15 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2.5A, 2.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 305ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager99.180
Single
1
N-Channel MOSFET
5 V ~ 15 V
-
2.5A, 2.5A
Non-Inverting
-
305ns, 20ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot ZXGD3104N8TC
Diodes Incorporated

IC SYNCH MOSFET CNTLR 8SO

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 5 V ~ 25 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2.5A, 7A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 480ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager15.240
Single
1
N-Channel MOSFET
5 V ~ 25 V
-
2.5A, 7A
Non-Inverting
-
480ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DGD2304S8-13
Diodes Incorporated

IC GATE DRVR HV SO8

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.7V, 2.3V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 70ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager7.264
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.7V, 2.3V
290mA, 600mA
Non-Inverting
600V
70ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot ZXGD3105N8TC
Diodes Incorporated

IC SYNCH MOSFET CNTLR 8SO

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 25 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 4A, 9A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 77ns, 26ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager10.800
Single
1
N-Channel MOSFET
4.5 V ~ 25 V
-
4A, 9A
Non-Inverting
-
77ns, 26ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DGD2108S8-13
Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 8SO

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.6V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 100ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager26.256
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.6V, 2.5V
290mA, 600mA
Non-Inverting
600V
100ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot ZXGD3001E6TA
Diodes Incorporated

IC GATE DRVR IGBT/MOSFET SOT23-6

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 12V (Max)
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 7.3ns, 11ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
Paket: SOT-23-6
Lager109.524
Single
1
IGBT, N-Channel MOSFET
12V (Max)
-
9A, 9A
Non-Inverting
-
7.3ns, 11ns
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
hot ZXGD3103N8TC
Diodes Incorporated

IC SYNCH MOSFET CNTRLR 4A 8SO

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 5 V ~ 15 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2.5A, 6A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 450ns, 21ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager169.932
Single
1
N-Channel MOSFET
5 V ~ 15 V
-
2.5A, 6A
Non-Inverting
-
450ns, 21ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot ZXGD3004E6TA
Diodes Incorporated

IC GATE DRVR IGBT/MOSFET SOT23-6

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 40V (Max)
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 8A, 8A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 13.4ns, 12.4ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
Paket: SOT-23-6
Lager74.400
Single
1
IGBT, N-Channel MOSFET
40V (Max)
-
8A, 8A
Non-Inverting
-
13.4ns, 12.4ns
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
hot ZXGD3002E6TA
Diodes Incorporated

IC GATE DRVR IGBT/MOSFET SOT23-6

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 20V (Max)
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 8.3ns, 10.8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
Paket: SOT-23-6
Lager32.844
Single
1
IGBT, N-Channel MOSFET
20V (Max)
-
9A, 9A
Non-Inverting
-
8.3ns, 10.8ns
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
hot ZXGD3003E6TA
Diodes Incorporated

IC GATE DRVR IGBT/MOSFET SOT23-6

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 40V (Max)
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 5A, 5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 8.9ns, 8.9ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
Paket: SOT-23-6
Lager36.000
Single
1
IGBT, N-Channel MOSFET
40V (Max)
-
5A, 5A
Non-Inverting
-
8.9ns, 8.9ns
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
hot ZXGD3006E6TA
Diodes Incorporated

IC GATE DRVR IGBT/MOSFET SOT26

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, SiC MOSFET
  • Voltage - Supply: 40V (Max)
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 10A, 10A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 48ns, 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
Paket: SOT-23-6
Lager144.000
Single
1
IGBT, SiC MOSFET
40V (Max)
-
10A, 10A
Non-Inverting
-
48ns, 35ns
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
hot ZXGD3005E6TA
Diodes Incorporated

IC GATE DVR IGBT/MOSFET SOT26

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 25V (Max)
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 10A, 10A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 48ns, 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
Paket: SOT-23-6
Lager102.000
Single
1
IGBT, N-Channel MOSFET
25V (Max)
-
10A, 10A
Non-Inverting
-
48ns, 35ns
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
DGD21904MS14-13
Diodes Incorporated

HV GATE DRIVER SO-14 T&R 2.5K

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager4.192
-
-
-
-
-
-
-
-
-
-
-
-
-
DGD2106MS8-13
Diodes Incorporated

HV GATE DRIVER SO-8 T&R 2.5K

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager7.728
-
-
-
-
-
-
-
-
-
-
-
-
-