Page 530 - Transistoren - Bipolar (BJT) - Einzeln | Diskrete Halbleiterprodukte

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
JAN2N1016B	Microsemi Corporation	TRANS NPN 100V 7.5A Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Lager6.896	-	-	-	-	-	-	-	-	-	-	-
TIP32B-S	Bourns Inc.	TRANS PNP 80V 3A Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Power - Max: 40W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	Paket: TO-220-3	Lager2.032	3A	80V	1.2V @ 375mA, 3A	300µA	10 @ 3A, 4V	40W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
KSD986OS	Fairchild/ON Semiconductor	TRANS NPN DARL 80V 1.5A TO-126 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 2V Power - Max: 1W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	Paket: TO-225AA, TO-126-3	Lager6.032	1.5A	80V	1.5V @ 1mA, 1A	10µA (ICBO)	4000 @ 1A, 2V	1W	-	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126-3
BUL903ED	STMicroelectronics	TRANS NPN 400V 5A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 3V Power - Max: 70W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Paket: TO-220-3	Lager2.976	5A	400V	1V @ 150mA, 1A	1mA	20 @ 500mA, 3V	70W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220AB
JANTXV2N4236	Microsemi Corporation	TRANS PNP 80V 1A TO39 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V Power - Max: 1W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	Paket: TO-205AD, TO-39-3 Metal Can	Lager5.904	1A	80V	600mV @ 100mA, 1A	1mA	30 @ 250mA, 1V	1W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
2PC4081Q,115	Nexperia USA Inc.	TRANS NPN 50V 0.15A SOT323 Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 200mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	Paket: SC-70, SOT-323	Lager36.000	150mA	50V	400mV @ 5mA, 50mA	100nA (ICBO)	120 @ 1mA, 6V	200mW	100MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
KSC5305DFTTU	Fairchild/ON Semiconductor	TRANS NPN 400V 5A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 500mV @ 400mA, 2A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 1V Power - Max: 75W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220-3F	Paket: TO-220-3 Full Pack	Lager17.772	5A	400V	500mV @ 400mA, 2A	10µA (ICBO)	8 @ 2A, 1V	75W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220-3F
BC638TA	Fairchild/ON Semiconductor	TRANS PNP 60V 1A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Lager2.112	1A	60V	500mV @ 50mA, 500mA	100nA (ICBO)	40 @ 150mA, 2V	1W	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
PBSS4032NZ,115	Nexperia USA Inc.	TRANS NPN 30V 4.9A SOT223 Transistor Type: NPN Current - Collector (Ic) (Max): 4.9A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 340mV @ 270mA, 5.4A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V Power - Max: 2W Frequency - Transition: 145MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	Paket: TO-261-4, TO-261AA	Lager18.984	4.9A	30V	340mV @ 270mA, 5.4A	100nA	250 @ 2A, 2V	2W	145MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
ZX5T949GTA	Diodes Incorporated	TRANS PNP 30V 5.5A SOT-223 Transistor Type: PNP Current - Collector (Ic) (Max): 5.5A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 210mV @ 500mA, 5.5A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 3W Frequency - Transition: 110MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	Paket: TO-261-4, TO-261AA	Lager253.920	5.5A	30V	210mV @ 500mA, 5.5A	20nA (ICBO)	100 @ 1A, 1V	3W	110MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
2DA1213Y-13	Diodes Incorporated	TRANS PNP 50V 2A SOT89-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 160MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	Paket: TO-243AA	Lager229.908	2A	50V	500mV @ 50mA, 1A	100nA (ICBO)	120 @ 500mA, 2V	1W	160MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
DSS5240T-7	Diodes Incorporated	TRANS PNP 40V 2A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 1A, 2V Power - Max: 600mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	Paket: TO-236-3, SC-59, SOT-23-3	Lager7.648	2A	40V	350mV @ 200mA, 2A	100nA (ICBO)	210 @ 1A, 2V	600mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
FMMTA14TA	Diodes Incorporated	TRANS NPN DARL 40V 0.3A SOT23-3 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 900mV @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Power - Max: 330mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	Paket: TO-236-3, SC-59, SOT-23-3	Lager216.000	300mA	40V	900mV @ 100µA, 100mA	100nA	20000 @ 100mA, 5V	330mW	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
2SA1122CCTR-E	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANS PNP Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 55 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 12V Power - Max: 150 mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: 3-CMPAK	Paket: -	Request a Quote	100 mA	55 V	500mV @ 1mA, 10mA	500nA (ICBO)	160 @ 2mA, 12V	150 mW	-	150°C (TJ)	Surface Mount	SC-70, SOT-323	3-CMPAK
2SCR542F3TR	Rohm Semiconductor	TRANS NPN 30V 3A HUML2020L3 Transistor Type: NPN Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Power - Max: 1 W Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UDFN Exposed Pad Supplier Device Package: HUML2020L3	Paket: -	Lager7.722	3 A	30 V	200mV @ 50mA, 1A	100nA (ICBO)	200 @ 500mA, 2V	1 W	250MHz	150°C (TJ)	Surface Mount	3-UDFN Exposed Pad	HUML2020L3
2SD1065R	onsemi	POWER BIPOLAR TRANSISTOR NPN Transistor Type: NPN Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 400mA, 8A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V Power - Max: 90 W Frequency - Transition: 20MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3PB	Paket: -	Request a Quote	15 A	50 V	400mV @ 400mA, 8A	100µA (ICBO)	100 @ 1A, 2V	90 W	20MHz	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3PB
2SA992-T-A	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANS PNP Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N4123-AP	Micro Commercial Co	TRANS NPN 30V 0.2A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V Power - Max: 625 mW Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92	Paket: -	Request a Quote	200 mA	30 V	300mV @ 5mA, 50mA	50nA (ICBO)	50 @ 2mA, 1V	625 mW	250MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92
JANKCDR2N2907A	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	Paket: -	Request a Quote	600 mA	60 V	1.6V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
MPS2907ARLRA	onsemi	TRANS PNP SS GP 60V TO92 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SD1804S-E	onsemi	BIP NPN 8A 50V Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BC237A-AP	Micro Commercial Co	TRANS NPN 45V 0.1A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Power - Max: 350 mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92	Paket: -	Request a Quote	100 mA	45 V	600mV @ 5mA, 100mA	15nA (ICBO)	120 @ 2mA, 5V	350 mW	200MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92
2SC6142-Q	Toshiba Semiconductor and Storage	TRANS NPN 375V 1.5A PW-MOLD2 Transistor Type: NPN Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 375 V Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 800mA Current - Collector Cutoff (Max): 50µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 1.1 W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Stub Leads, IPAK Supplier Device Package: PW-MOLD2	Paket: -	Request a Quote	1.5 A	375 V	900mV @ 100mA, 800mA	50µA (ICBO)	100 @ 100mA, 5V	1.1 W	-	150°C (TJ)	Through Hole	TO-251-3 Stub Leads, IPAK	PW-MOLD2
KTA1504-O-TP	Micro Commercial Co	TRANS PNP 50V 0.15A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Power - Max: 150 mW Frequency - Transition: 80MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	Paket: -	Request a Quote	150 mA	50 V	300mV @ 10mA, 100mA	100nA (ICBO)	70 @ 2mA, 6V	150 mW	80MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2SC4519-5-TB-E	onsemi	BIP NPN 0.5A 45V Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NSVT1418LT1G	onsemi	TRANS PNP 160V 1A SOT23-3 Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 160 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 25mA, 250mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 420 mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	Paket: -	Lager6.870	1 A	160 V	500mV @ 25mA, 250mA	100nA (ICBO)	100 @ 100mA, 5V	420 mW	120MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
BUX11-PBFREE	Central Semiconductor Corp	TRANS NPN 20A Transistor Type: NPN Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: 8MHz Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	20 A	-	-	-	-	-	8MHz	-	-	-	-
40406-TIN-LEAD	Central Semiconductor Corp	TRANSISTOR Transistor Type: NPN Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100µA, 10V Power - Max: - Frequency - Transition: 100MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	Paket: -	Request a Quote	-	50 V	-	-	30 @ 100µA, 10V	-	100MHz	-	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39

JAN2N1016B

Microsemi Corporation

TRANS NPN 100V 7.5A

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Lager6.896

-

TIP32B-S

Bourns Inc.

TRANS PNP 80V 3A

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Power - Max: 40W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

Paket: TO-220-3

Lager2.032

3A

80V

1.2V @ 375mA, 3A

300µA

10 @ 3A, 4V

40W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

KSD986OS

Fairchild/ON Semiconductor

TRANS NPN DARL 80V 1.5A TO-126

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 2V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3

Paket: TO-225AA, TO-126-3

Lager6.032

1.5A

80V

1.5V @ 1mA, 1A

10µA (ICBO)

4000 @ 1A, 2V

1W

-

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126-3

BUL903ED

STMicroelectronics

TRANS NPN 400V 5A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 3V
Power - Max: 70W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

Paket: TO-220-3

Lager2.976

5A

400V

1V @ 150mA, 1A

1mA

20 @ 500mA, 3V

70W

-

150°C (TJ)

Through Hole

TO-220-3

TO-220AB

JANTXV2N4236

Microsemi Corporation

TRANS PNP 80V 1A TO39

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

Paket: TO-205AD, TO-39-3 Metal Can

Lager5.904

1A

80V

600mV @ 100mA, 1A

1mA

30 @ 250mA, 1V

1W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

2PC4081Q,115

Nexperia USA Inc.

TRANS NPN 50V 0.15A SOT323

Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 200mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

Paket: SC-70, SOT-323

Lager36.000

150mA

50V

400mV @ 5mA, 50mA

100nA (ICBO)

120 @ 1mA, 6V

200mW

100MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

KSC5305DFTTU

Fairchild/ON Semiconductor

TRANS NPN 400V 5A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 400mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 1V
Power - Max: 75W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220-3F

Paket: TO-220-3 Full Pack

Lager17.772

5A

400V

500mV @ 400mA, 2A

10µA (ICBO)

8 @ 2A, 1V

75W

-

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220-3F

BC638TA

Fairchild/ON Semiconductor

TRANS PNP 60V 1A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Lager2.112

1A

60V

500mV @ 50mA, 500mA

100nA (ICBO)

40 @ 150mA, 2V

1W

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

PBSS4032NZ,115

Nexperia USA Inc.

TRANS NPN 30V 4.9A SOT223

Transistor Type: NPN
Current - Collector (Ic) (Max): 4.9A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 340mV @ 270mA, 5.4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
Power - Max: 2W
Frequency - Transition: 145MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

Paket: TO-261-4, TO-261AA

Lager18.984

4.9A

30V

340mV @ 270mA, 5.4A

100nA

250 @ 2A, 2V

2W

145MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

ZX5T949GTA

Diodes Incorporated

TRANS PNP 30V 5.5A SOT-223

Transistor Type: PNP
Current - Collector (Ic) (Max): 5.5A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 210mV @ 500mA, 5.5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Power - Max: 3W
Frequency - Transition: 110MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

Paket: TO-261-4, TO-261AA

Lager253.920

5.5A

30V

210mV @ 500mA, 5.5A

20nA (ICBO)

100 @ 1A, 1V

3W

110MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

2DA1213Y-13

Diodes Incorporated

TRANS PNP 50V 2A SOT89-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 160MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

Paket: TO-243AA

Lager229.908

2A

50V

500mV @ 50mA, 1A

100nA (ICBO)

120 @ 500mA, 2V

1W

160MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

DSS5240T-7

Diodes Incorporated

TRANS PNP 40V 2A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 1A, 2V
Power - Max: 600mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

Lager7.648

2A

40V

350mV @ 200mA, 2A

100nA (ICBO)

210 @ 1A, 2V

600mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

FMMTA14TA

Diodes Incorporated

TRANS NPN DARL 40V 0.3A SOT23-3

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Power - Max: 330mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

Lager216.000

300mA

40V

900mV @ 100µA, 100mA

100nA

20000 @ 100mA, 5V

330mW

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

2SA1122CCTR-E

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANS PNP

Transistor Type: PNP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 55 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 12V
Power - Max: 150 mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: 3-CMPAK

Paket: -

Request a Quote

100 mA

55 V

500mV @ 1mA, 10mA

500nA (ICBO)

160 @ 2mA, 12V

150 mW

-

150°C (TJ)

Surface Mount

SC-70, SOT-323

3-CMPAK

2SCR542F3TR

Rohm Semiconductor

TRANS NPN 30V 3A HUML2020L3

Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 1 W
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Supplier Device Package: HUML2020L3

Paket: -

Lager7.722

3 A

30 V

200mV @ 50mA, 1A

100nA (ICBO)

200 @ 500mA, 2V

1 W

250MHz

150°C (TJ)

Surface Mount

3-UDFN Exposed Pad

HUML2020L3

2SD1065R

onsemi

POWER BIPOLAR TRANSISTOR NPN

Transistor Type: NPN
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 400mA, 8A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Power - Max: 90 W
Frequency - Transition: 20MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PB

Paket: -

Request a Quote

15 A

50 V

400mV @ 400mA, 8A

100µA (ICBO)

100 @ 1A, 2V

90 W

20MHz

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3PB

2SA992-T-A

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANS PNP

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

2N4123-AP

Micro Commercial Co

TRANS NPN 30V 0.2A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Power - Max: 625 mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92

Paket: -

Request a Quote

200 mA

30 V

300mV @ 5mA, 50mA

50nA (ICBO)

50 @ 2mA, 1V

625 mW

250MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

TO-92

JANKCDR2N2907A

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

Paket: -

Request a Quote

600 mA

60 V

1.6V @ 50mA, 500mA

50nA

100 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

MPS2907ARLRA

onsemi

TRANS PNP SS GP 60V TO92

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

2SD1804S-E

onsemi

BIP NPN 8A 50V

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

BC237A-AP

Micro Commercial Co

TRANS NPN 45V 0.1A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Power - Max: 350 mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92

Paket: -

Request a Quote

100 mA

45 V

600mV @ 5mA, 100mA

15nA (ICBO)

120 @ 2mA, 5V

350 mW

200MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

TO-92

2SC6142-Q

Toshiba Semiconductor and Storage

TRANS NPN 375V 1.5A PW-MOLD2

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 375 V
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 800mA
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 1.1 W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPAK
Supplier Device Package: PW-MOLD2

Paket: -

Request a Quote

1.5 A

375 V

900mV @ 100mA, 800mA

50µA (ICBO)

100 @ 100mA, 5V

1.1 W

-

150°C (TJ)

Through Hole

TO-251-3 Stub Leads, IPAK

PW-MOLD2

KTA1504-O-TP

Micro Commercial Co

TRANS PNP 50V 0.15A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Power - Max: 150 mW
Frequency - Transition: 80MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

Paket: -

Request a Quote

150 mA

50 V

300mV @ 10mA, 100mA

100nA (ICBO)

70 @ 2mA, 6V

150 mW

80MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

2SC4519-5-TB-E

onsemi

BIP NPN 0.5A 45V

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

NSVT1418LT1G

onsemi

TRANS PNP 160V 1A SOT23-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 420 mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

Paket: -

Lager6.870

1 A

160 V

500mV @ 25mA, 250mA

100nA (ICBO)

100 @ 100mA, 5V

420 mW

120MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

BUX11-PBFREE

Central Semiconductor Corp

TRANS NPN 20A

Transistor Type: NPN
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: 8MHz
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

20 A

-

8MHz

-

40406-TIN-LEAD

Central Semiconductor Corp

TRANSISTOR

Transistor Type: NPN
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100µA, 10V
Power - Max: -
Frequency - Transition: 100MHz
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

Paket: -

Request a Quote

-

50 V

-

30 @ 100µA, 10V

-

100MHz

-

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39