Page 531 - Transistoren - Bipolar (BJT) - Einzeln | Diskrete Halbleiterprodukte

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BC846B/DG/B3,235	Nexperia USA Inc.	TRANS GEN PURPOSE TO-236AB Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Lager7.456	-	-	-	-	-	-	-	-	-	-	-
JAN2N3585	Microsemi Corporation	TRANS NPN 300V 2A TO-66 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V Power - Max: 2.5W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA)	Paket: TO-213AA, TO-66-2	Lager3.520	2A	300V	750mV @ 125mA, 1A	5mA	25 @ 1A, 10V	2.5W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-213AA, TO-66-2	TO-66 (TO-213AA)
JANTX2N5684	Microsemi Corporation	TRANS NPN 80V 50A TO-3 Transistor Type: NPN Current - Collector (Ic) (Max): 50A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A Current - Collector Cutoff (Max): 5µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5A, 2V Power - Max: 300W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	Paket: TO-204AA, TO-3	Lager2.320	50A	80V	5V @ 10A, 50A	5µA	30 @ 5A, 2V	300W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-204AA, TO-3	TO-3
BDX53C-S	Bourns Inc.	TRANS NPN DARL 100V 8A Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 12mA, 3A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	Paket: TO-220-3	Lager7.968	8A	100V	2.5V @ 12mA, 3A	500µA	750 @ 3A, 3V	2W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
BC517RL1G	ON Semiconductor	TRANS NPN DARL 30V 1A TO-92 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V Power - Max: 1.5W Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Lager4.800	1A	30V	1V @ 100µA, 100mA	500nA	30000 @ 20mA, 2V	1.5W	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BC557B	ON Semiconductor	TRANS PNP 45V 0.1A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Power - Max: 625mW Frequency - Transition: 320MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	Paket: TO-226-3, TO-92-3 (TO-226AA)	Lager775.680	100mA	45V	650mV @ 5mA, 100mA	100nA	180 @ 2mA, 5V	625mW	320MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
FJP5027TU	Fairchild/ON Semiconductor	TRANS NPN 800V 3A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 800V Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Power - Max: 50W Frequency - Transition: 15MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	Paket: TO-220-3	Lager6.816	3A	800V	2V @ 300mA, 1.5A	10µA (ICBO)	10 @ 200mA, 5V	50W	15MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220
MPS3702	Fairchild/ON Semiconductor	TRANS PNP 25V 0.8A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	Paket: TO-226-3, TO-92-3 (TO-226AA)	Lager3.952	800mA	25V	250mV @ 5mA, 50mA	100nA (ICBO)	60 @ 50mA, 5V	625mW	100MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
MPS3904,126	NXP	TRANS NPN 40V 0.1A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 500mW Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Lager6.176	100mA	40V	300mV @ 5mA, 50mA	50nA (ICBO)	100 @ 10mA, 1V	500mW	180MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
ZTX453STOA	Diodes Incorporated	TRANS NPN 100V 1A E-LINE Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 700mV @ 15mA, 150mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	Paket: E-Line-3, Formed Leads	Lager2.672	1A	100V	700mV @ 15mA, 150mA	100nA (ICBO)	40 @ 150mA, 10V	1W	150MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
ZXTAM322TA	Diodes Incorporated	TRANS NPN 15V 4.5A 2X2MM 3-MLP Transistor Type: NPN Current - Collector (Ic) (Max): 4.5A Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 4.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 3A, 2V Power - Max: 3W Frequency - Transition: 120MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-PowerSMD, Flat Leads Supplier Device Package: 3-MLP/DFN (2x2)	Paket: 3-PowerSMD, Flat Leads	Lager927.120	4.5A	15V	280mV @ 50mA, 4.5A	25nA	200 @ 3A, 2V	3W	120MHz	-55°C ~ 150°C (TJ)	Surface Mount	3-PowerSMD, Flat Leads	3-MLP/DFN (2x2)
BCX6810H6327XTSA1	Infineon Technologies	TRANSISTOR NPN SOT89 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Power - Max: 3W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PG-SOT89	Paket: TO-243AA	Lager3.344	1A	20V	500mV @ 100mA, 1A	100nA (ICBO)	85 @ 500mA, 1V	3W	100MHz	150°C (TJ)	Surface Mount	TO-243AA	PG-SOT89
JANTXV2N6298	Microsemi Corporation	TRANS PNP DARL 60V 8A TO66 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2V @ 80mA, 8A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Power - Max: 64W Frequency - Transition: - Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA)	Paket: TO-213AA, TO-66-2	Lager7.088	8A	60V	2V @ 80mA, 8A	500µA	750 @ 4A, 3V	64W	-	-65°C ~ 175°C (TJ)	Through Hole	TO-213AA, TO-66-2	TO-66 (TO-213AA)
JANTX2N720A	Microsemi Corporation	TRANS NPN 80V 0.5A TO-18 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	Paket: TO-206AA, TO-18-3 Metal Can	Lager4.784	500mA	80V	5V @ 15mA, 150mA	10µA (ICBO)	40 @ 150mA, 10V	500mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
TIP127-BP	Micro Commercial Co	TRANS PNP DARL 100V 5A TO-220 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V Power - Max: 2W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	Paket: TO-220-3	Lager7.632	5A	100V	4V @ 20mA, 5A	500µA	1000 @ 3A, 3V	2W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220
2SD1963T100R	Rohm Semiconductor	TRANS NPN 20V 3A SOT-89 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 450mV @ 150mA, 1.5A Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V Power - Max: 2W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3	Paket: TO-243AA	Lager19.200	3A	20V	450mV @ 150mA, 1.5A	500nA (ICBO)	180 @ 500mA, 2V	2W	150MHz	150°C (TJ)	Surface Mount	TO-243AA	MPT3
2SCR554P5T100	Rohm Semiconductor	NPN 80V 1.5A MEDIUM POWER TRANSI Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 300mV @ 25mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Power - Max: 500mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3	Paket: TO-243AA	Lager3.488	1.5A	80V	300mV @ 25mA, 500mA	1µA (ICBO)	120 @ 100mA, 3V	500mW	300MHz	150°C (TJ)	Surface Mount	TO-243AA	MPT3
PHPT61003PYX	Nexperia USA Inc.	TRANS PNP 100V 3A LFPAK Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 360mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V Power - Max: 1.25W Frequency - Transition: 125MHz Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Supplier Device Package: LFPAK56, Power-SO8	Paket: SC-100, SOT-669	Lager4.256	3A	100V	360mV @ 200mA, 2A	100nA (ICBO)	150 @ 500mA, 10V	1.25W	125MHz	175°C (TJ)	Surface Mount	SC-100, SOT-669	LFPAK56, Power-SO8
BCX51-10,115	Nexperia USA Inc.	TRANS PNP 45V 1A SOT89 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Power - Max: 1.3W Frequency - Transition: 145MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	Paket: TO-243AA	Lager4.112	1A	45V	500mV @ 50mA, 500mA	100nA (ICBO)	63 @ 150mA, 2V	1.3W	145MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
SMMBT2222ALT1G	ON Semiconductor	TRANS NPN 40V 0.6A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 225mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	Paket: TO-236-3, SC-59, SOT-23-3	Lager144.864	600mA	40V	1V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	225mW	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
MMBT5401_R1_00001	Panjit International Inc.	TRANS PNP 150V 0.6A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Power - Max: 225 mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	Paket: -	Lager30.819	600 mA	150 V	500mV @ 5mA, 50mA	50nA (ICBO)	60 @ 10mA, 5V	225 mW	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2SD1223-TE16L1-NQ	Toshiba Semiconductor and Storage	TRANS NPN DARL 80V 4A PW-MOLD Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 6mA, 3A Current - Collector Cutoff (Max): 20µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 2V Power - Max: 1 W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: PW-MOLD	Paket: -	Lager3.663	4 A	80 V	1.5V @ 6mA, 3A	20µA (ICBO)	1000 @ 3A, 2V	1 W	-	150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	PW-MOLD
CXT2222A-TR-PBFREE	Central Semiconductor Corp	TRANS NPN 40V 0.6A SOT89 Transistor Type: NPN Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1.2 W Frequency - Transition: 300MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	Paket: -	Lager11.940	600 mA	40 V	1V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	1.2 W	300MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89
FX509-N-TL-E	onsemi	BIP PNP+PNP 3A 100V Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2C2906A-MSCL	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N5327	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 7.5 W Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	Paket: -	Request a Quote	10 A	80 V	-	-	-	7.5 W	-	-	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2SB647DTZ	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSISTOR, Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 150mA, 5V Power - Max: 800 mW Frequency - Transition: 140MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Paket: -	Request a Quote	1 A	80 V	1V @ 50mA, 500mA	10µA (ICBO)	160 @ 150mA, 5V	800 mW	140MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
MPSA42-TIN-LEAD	Central Semiconductor Corp	TRANS NPN 300V 0.5A TO92-3 Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Power - Max: 625 mW Frequency - Transition: 50MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	Paket: -	Request a Quote	500 mA	300 V	500mV @ 2mA, 20mA	100nA (ICBO)	40 @ 30mA, 10V	625 mW	50MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3

BC846B/DG/B3,235

Nexperia USA Inc.

TRANS GEN PURPOSE TO-236AB

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Lager7.456

-

JAN2N3585

Microsemi Corporation

TRANS NPN 300V 2A TO-66

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V
Power - Max: 2.5W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66 (TO-213AA)

Paket: TO-213AA, TO-66-2

Lager3.520

2A

300V

750mV @ 125mA, 1A

5mA

25 @ 1A, 10V

2.5W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-213AA, TO-66-2

TO-66 (TO-213AA)

JANTX2N5684

Microsemi Corporation

TRANS NPN 80V 50A TO-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 50A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A
Current - Collector Cutoff (Max): 5µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5A, 2V
Power - Max: 300W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

Paket: TO-204AA, TO-3

Lager2.320

50A

80V

5V @ 10A, 50A

5µA

30 @ 5A, 2V

300W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-204AA, TO-3

TO-3

BDX53C-S

Bourns Inc.

TRANS NPN DARL 100V 8A

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 12mA, 3A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

Paket: TO-220-3

Lager7.968

8A

100V

2.5V @ 12mA, 3A

500µA

750 @ 3A, 3V

2W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

BC517RL1G

ON Semiconductor

TRANS NPN DARL 30V 1A TO-92

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V
Power - Max: 1.5W
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Lager4.800

1A

30V

1V @ 100µA, 100mA

500nA

30000 @ 20mA, 2V

1.5W

200MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BC557B

ON Semiconductor

TRANS PNP 45V 0.1A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Power - Max: 625mW
Frequency - Transition: 320MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

Paket: TO-226-3, TO-92-3 (TO-226AA)

Lager775.680

100mA

45V

650mV @ 5mA, 100mA

100nA

180 @ 2mA, 5V

625mW

320MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

FJP5027TU

Fairchild/ON Semiconductor

TRANS NPN 800V 3A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 800V
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Power - Max: 50W
Frequency - Transition: 15MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

Paket: TO-220-3

Lager6.816

3A

800V

2V @ 300mA, 1.5A

10µA (ICBO)

10 @ 200mA, 5V

50W

15MHz

150°C (TJ)

Through Hole

TO-220-3

TO-220

MPS3702

Fairchild/ON Semiconductor

TRANS PNP 25V 0.8A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

Paket: TO-226-3, TO-92-3 (TO-226AA)

Lager3.952

800mA

25V

250mV @ 5mA, 50mA

100nA (ICBO)

60 @ 50mA, 5V

625mW

100MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

MPS3904,126

NXP

TRANS NPN 40V 0.1A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 500mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Lager6.176

100mA

40V

300mV @ 5mA, 50mA

50nA (ICBO)

100 @ 10mA, 1V

500mW

180MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

ZTX453STOA

Diodes Incorporated

TRANS NPN 100V 1A E-LINE

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

Paket: E-Line-3, Formed Leads

Lager2.672

1A

100V

700mV @ 15mA, 150mA

100nA (ICBO)

40 @ 150mA, 10V

1W

150MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

ZXTAM322TA

Diodes Incorporated

TRANS NPN 15V 4.5A 2X2MM 3-MLP

Transistor Type: NPN
Current - Collector (Ic) (Max): 4.5A
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 4.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 3A, 2V
Power - Max: 3W
Frequency - Transition: 120MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Supplier Device Package: 3-MLP/DFN (2x2)

Paket: 3-PowerSMD, Flat Leads

Lager927.120

4.5A

15V

280mV @ 50mA, 4.5A

25nA

200 @ 3A, 2V

3W

120MHz

-55°C ~ 150°C (TJ)

Surface Mount

3-PowerSMD, Flat Leads

3-MLP/DFN (2x2)

BCX6810H6327XTSA1

Infineon Technologies

TRANSISTOR NPN SOT89

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Power - Max: 3W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PG-SOT89

Paket: TO-243AA

Lager3.344

1A

20V

500mV @ 100mA, 1A

100nA (ICBO)

85 @ 500mA, 1V

3W

100MHz

150°C (TJ)

Surface Mount

TO-243AA

PG-SOT89

JANTXV2N6298

Microsemi Corporation

TRANS PNP DARL 60V 8A TO66

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Power - Max: 64W
Frequency - Transition: -
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66 (TO-213AA)

Paket: TO-213AA, TO-66-2

Lager7.088

8A

60V

2V @ 80mA, 8A

500µA

750 @ 4A, 3V

64W

-

-65°C ~ 175°C (TJ)

Through Hole

TO-213AA, TO-66-2

TO-66 (TO-213AA)

JANTX2N720A

Microsemi Corporation

TRANS NPN 80V 0.5A TO-18

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 500mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

Paket: TO-206AA, TO-18-3 Metal Can

Lager4.784

500mA

80V

5V @ 15mA, 150mA

10µA (ICBO)

40 @ 150mA, 10V

500mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

TIP127-BP

Micro Commercial Co

TRANS PNP DARL 100V 5A TO-220

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

Paket: TO-220-3

Lager7.632

5A

100V

4V @ 20mA, 5A

500µA

1000 @ 3A, 3V

2W

-

150°C (TJ)

Through Hole

TO-220-3

TO-220

2SD1963T100R

Rohm Semiconductor

TRANS NPN 20V 3A SOT-89

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Power - Max: 2W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3

Paket: TO-243AA

Lager19.200

3A

20V

450mV @ 150mA, 1.5A

500nA (ICBO)

180 @ 500mA, 2V

2W

150MHz

150°C (TJ)

Surface Mount

TO-243AA

MPT3

2SCR554P5T100

Rohm Semiconductor

NPN 80V 1.5A MEDIUM POWER TRANSI

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Power - Max: 500mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3

Paket: TO-243AA

Lager3.488

1.5A

80V

300mV @ 25mA, 500mA

1µA (ICBO)

120 @ 100mA, 3V

500mW

300MHz

150°C (TJ)

Surface Mount

TO-243AA

MPT3

PHPT61003PYX

Nexperia USA Inc.

TRANS PNP 100V 3A LFPAK

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 360mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V
Power - Max: 1.25W
Frequency - Transition: 125MHz
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8

Paket: SC-100, SOT-669

Lager4.256

3A

100V

360mV @ 200mA, 2A

100nA (ICBO)

150 @ 500mA, 10V

1.25W

125MHz

175°C (TJ)

Surface Mount

SC-100, SOT-669

LFPAK56, Power-SO8

BCX51-10,115

Nexperia USA Inc.

TRANS PNP 45V 1A SOT89

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 1.3W
Frequency - Transition: 145MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

Paket: TO-243AA

Lager4.112

1A

45V

500mV @ 50mA, 500mA

100nA (ICBO)

63 @ 150mA, 2V

1.3W

145MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

SMMBT2222ALT1G

ON Semiconductor

TRANS NPN 40V 0.6A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 225mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

Paket: TO-236-3, SC-59, SOT-23-3

Lager144.864

600mA

40V

1V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

225mW

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

MMBT5401_R1_00001

Panjit International Inc.

TRANS PNP 150V 0.6A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 225 mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

Paket: -

Lager30.819

600 mA

150 V

500mV @ 5mA, 50mA

50nA (ICBO)

60 @ 10mA, 5V

225 mW

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

2SD1223-TE16L1-NQ

Toshiba Semiconductor and Storage

TRANS NPN DARL 80V 4A PW-MOLD

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 6mA, 3A
Current - Collector Cutoff (Max): 20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 2V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: PW-MOLD

Paket: -

Lager3.663

4 A

80 V

1.5V @ 6mA, 3A

20µA (ICBO)

1000 @ 3A, 2V

1 W

-

150°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

PW-MOLD

CXT2222A-TR-PBFREE

Central Semiconductor Corp

TRANS NPN 40V 0.6A SOT89

Transistor Type: NPN
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1.2 W
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

Paket: -

Lager11.940

600 mA

40 V

1V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

1.2 W

300MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89

FX509-N-TL-E

onsemi

BIP PNP+PNP 3A 100V

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

2C2906A-MSCL

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

2N5327

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 7.5 W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

Paket: -

Request a Quote

10 A

80 V

-

7.5 W

-

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

2SB647DTZ

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSISTOR,

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 150mA, 5V
Power - Max: 800 mW
Frequency - Transition: 140MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

Paket: -

Request a Quote

1 A

80 V

1V @ 50mA, 500mA

10µA (ICBO)

160 @ 150mA, 5V

800 mW

140MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

MPSA42-TIN-LEAD

Central Semiconductor Corp

TRANS NPN 300V 0.5A TO92-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Power - Max: 625 mW
Frequency - Transition: 50MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

Paket: -

Request a Quote

500 mA

300 V

500mV @ 2mA, 20mA

100nA (ICBO)

40 @ 30mA, 10V

625 mW

50MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3