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Transistoren - Bipolar (BJT) - Einzeln

Aufzeichnungen 20.307
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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BUK763R9-60E/GFJ
NXP

MOSFET N-CH D2PAK

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager5.504
-
-
-
-
-
-
-
-
-
-
-
FJAF6810DTU
Fairchild/ON Semiconductor

TRANS NPN 750V 10A TO-3PF

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 750V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 1.5A, 6A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 6A, 5V
  • Power - Max: 60W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-94
  • Supplier Device Package: TO-3PF
Paket: SC-94
Lager3.456
10A
750V
3V @ 1.5A, 6A
1mA
5 @ 6A, 5V
60W
-
150°C (TJ)
Through Hole
SC-94
TO-3PF
KSD227GTA
Fairchild/ON Semiconductor

TRANS NPN 25V 0.3A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 300mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 1V
  • Power - Max: 400mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager4.832
300mA
25V
400mV @ 30mA, 300mA
100nA (ICBO)
200 @ 50mA, 1V
400mW
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
ZTX1049ASTOA
Diodes Incorporated

TRANS NPN 25V 4A E-LINE

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 4A
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
  • Power - Max: 1W
  • Frequency - Transition: 180MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
Paket: E-Line-3, Formed Leads
Lager2.528
4A
25V
220mV @ 50mA, 4A
10nA
300 @ 1A, 2V
1W
180MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
MMBT3906_NL
Fairchild/ON Semiconductor

TRANS PNP 40V 0.2A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 350mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager5.872
200mA
40V
400mV @ 5mA, 50mA
-
100 @ 10mA, 1V
350mW
250MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
hot 2N6043
ON Semiconductor

TRANS NPN DARL 60V 8A TO220AB

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 16mA, 4A
  • Current - Collector Cutoff (Max): 20µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
  • Power - Max: 75W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
Paket: TO-220-3
Lager18.588
8A
60V
2V @ 16mA, 4A
20µA
1000 @ 4A, 4V
75W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
2N3904PH
Vishay Semiconductor Diodes Division

TRANS NPN 40V 0.2A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
Paket: TO-226-3, TO-92-3 (TO-226AA)
Lager5.936
200mA
40V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
625mW
300MHz
-
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
JANTXV2N2904AL
Microsemi Corporation

TRANS PNP 60V 0.6A TO5

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 800mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
Paket: TO-205AA, TO-5-3 Metal Can
Lager4.528
600mA
60V
1.6V @ 50mA, 500mA
1µA
40 @ 150mA, 10V
800mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5
hot RXT2222AT100
Rohm Semiconductor

TRANS NPN MPT3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: MPT3
Paket: TO-243AA
Lager16.740
600mA
40V
1V @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 10V
500mW
300MHz
150°C (TJ)
Surface Mount
TO-243AA
MPT3
2SC5659T2LN
Rohm Semiconductor

TRANS NPN 25V 0.05A VMT3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 1mA, 6V
  • Power - Max: 150mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VMT3
Paket: SOT-723
Lager5.328
50mA
25V
300mV @ 1mA, 10mA
500nA (ICBO)
56 @ 1mA, 6V
150mW
300MHz
150°C (TJ)
Surface Mount
SOT-723
VMT3
BSR33,135
Nexperia USA Inc.

TRANS PNP 80V 1A SOT89

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 1.35W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
Paket: TO-243AA
Lager3.168
1A
80V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 100mA, 5V
1.35W
100MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
hot ST8812FX
STMicroelectronics

TRANS NPN 600V 7A ISOWATT218FX

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 7A
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 4A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 4.5 @ 5A, 5V
  • Power - Max: 50W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOWATT218FX
  • Supplier Device Package: ISOWATT-218FX
Paket: ISOWATT218FX
Lager10.428
7A
600V
3V @ 800mA, 4A
1mA
4.5 @ 5A, 5V
50W
-
150°C (TJ)
Through Hole
ISOWATT218FX
ISOWATT-218FX
CMPT3646 TR
Central Semiconductor Corp

TRANS NPN 40V 0.2A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 500nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 400mV
  • Power - Max: 350mW
  • Frequency - Transition: 350MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
Paket: TO-236-3, SC-59, SOT-23-3
Lager6.880
200mA
15V
500mV @ 30mA, 300mA
500nA
30 @ 30mA, 400mV
350mW
350MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
BC846B-TP
Micro Commercial Co

TRANS NPN 65V 0.1A SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 225mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
Paket: TO-236-3, SC-59, SOT-23-3
Lager3.088
100mA
65V
500mV @ 5mA, 100mA
100nA
200 @ 2mA, 5V
225mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot 2SA2162G0L
Panasonic Electronic Components

TRANS PNP 12V 0.5A SSSMINI-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
  • Power - Max: 100mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: SSSMini3-F2
Paket: SOT-723
Lager5.592.000
500mA
12V
250mV @ 10mA, 200mA
100nA (ICBO)
270 @ 10mA, 2V
100mW
200MHz
125°C (TJ)
Surface Mount
SOT-723
SSSMini3-F2
hot 2SC4301
Sanken

TRANS NPN 800V 7A TO3PF

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 7A
  • Voltage - Collector Emitter Breakdown (Max): 800V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 600mA, 3A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
  • Power - Max: 80W
  • Frequency - Transition: 6MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PF
Paket: TO-3P-3 Full Pack
Lager18.828
7A
800V
500mV @ 600mA, 3A
100µA (ICBO)
10 @ 3A, 4V
80W
6MHz
150°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PF
hot ZTX949
Diodes Incorporated

TRANS PNP 30V 4.5A E-LINE

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 4.5A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 320mV @ 300mA, 5A
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
  • Power - Max: 1.58W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3
  • Supplier Device Package: E-Line (TO-92 compatible)
Paket: E-Line-3
Lager28.752
4.5A
30V
320mV @ 300mA, 5A
50nA (ICBO)
100 @ 1A, 1V
1.58W
100MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3
E-Line (TO-92 compatible)
hot BC858ALT1G
ON Semiconductor

TRANS PNP 30V 0.1A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
  • Power - Max: 300mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
Paket: TO-236-3, SC-59, SOT-23-3
Lager1.390.356
100mA
30V
650mV @ 5mA, 100mA
15nA (ICBO)
125 @ 2mA, 5V
300mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
hot ZTX1049A
Diodes Incorporated

TRANS NPN 25V 4A E-LINE

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 4A
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
  • Power - Max: 1W
  • Frequency - Transition: 180MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3
  • Supplier Device Package: E-Line (TO-92 compatible)
Paket: E-Line-3
Lager566.508
4A
25V
220mV @ 50mA, 4A
10nA
300 @ 1A, 2V
1W
180MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3
E-Line (TO-92 compatible)
hot KST2907AMTF
Fairchild/ON Semiconductor

TRANS PNP 60V 0.6A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 350mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager931.032
600mA
60V
1.6V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
350mW
200MHz
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BC307CZL1
onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 350 mW
  • Frequency - Transition: 280MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
  • Supplier Device Package: TO-92 (TO-226)
Paket: -
Request a Quote
100 mA
45 V
250mV @ 5mA, 100mA
15nA
420 @ 2mA, 5V
350 mW
280MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body (Formed Leads)
TO-92 (TO-226)
DXTP3C60PSQ-13
Diodes Incorporated

TRANS PNP 60V 3A POWERDI5060-8

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
  • Power - Max: 5 W
  • Frequency - Transition: 135MHz
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8
Paket: -
Lager10.230
3 A
60 V
360mV @ 300mA, 3A
100nA
150 @ 500mA, 2V
5 W
135MHz
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8
2SA1122CCTL-E
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANS PNP

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 55 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 12V
  • Power - Max: 150 mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: 3-CMPAK
Paket: -
Request a Quote
100 mA
55 V
500mV @ 1mA, 10mA
500nA (ICBO)
160 @ 2mA, 12V
150 mW
-
150°C (TJ)
Surface Mount
SC-70, SOT-323
3-CMPAK
2SB1132-R-TP
Micro Commercial Co

TRANS PNP 32V 1A SOT89

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 32 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
  • Power - Max: 500 mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
Paket: -
Request a Quote
1 A
32 V
500mV @ 100mA, 2A
500nA (ICBO)
180 @ 100mA, 2V
500 mW
150MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89
JANSM2N3636L
Microchip Technology

TRANS PNP 175V 1A TO5

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 175 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5AA
Paket: -
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1 A
175 V
600mV @ 5mA, 50mA
10µA
50 @ 50mA, 10V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5AA
MNS2N3637UB
Microchip Technology

SMALL-SIGNAL BJT

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2N3879
Microchip Technology

NPN TRANSISTOR

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 7 A
  • Voltage - Collector Emitter Breakdown (Max): 75 V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 400mA, 4A
  • Current - Collector Cutoff (Max): 4mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
  • Power - Max: 35 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-213AA, TO-66-2
  • Supplier Device Package: TO-66 (TO-213AA)
Paket: -
Lager54
7 A
75 V
1.2V @ 400mA, 4A
4mA
40 @ 500mA, 5V
35 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-213AA, TO-66-2
TO-66 (TO-213AA)
BCX56-10-QF
Nexperia USA Inc.

BCX56-10-Q/SOT89/MPT3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
  • Power - Max: 500 mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
Paket: -
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1 A
80 V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
500 mW
180MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89