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ON Semiconductor Produkte - Transistoren - FETs, MOSFET - Einzeln

Aufzeichnungen 2.260
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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
BXL4004-1E
ON Semiconductor

MOSFET N-CH 40V TO-220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8200pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 50A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager2.784
MOSFET (Metal Oxide)
40V
100A (Ta)
4.5V, 10V
-
140nC @ 10V
8200pF @ 20V
±20V
-
75W (Tc)
3.9 mOhm @ 50A, 10V
150°C
Through Hole
TO-220-3
TO-220-3
5HN01C-TB-EX
ON Semiconductor

MOSFET N-CH 50V 100MA CP3

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Lager3.760
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3LP01SS-TL-EX
ON Semiconductor

MOSFET P-CH 30V SOT-623

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7.5pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 10.4 Ohm @ 50mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Lager4.192
MOSFET (Metal Oxide)
30V
100mA (Ta)
1.5V, 4V
-
1.43nC @ 10V
7.5pF @ 10V
±10V
-
150mW (Ta)
10.4 Ohm @ 50mA, 4V
150°C (TJ)
-
-
-
ATP104-TL-HX
ON Semiconductor

MOSFET P-CH 30V 75A ATPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 10V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 38A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ATPAK
  • Package / Case: -
Paket: -
Lager3.744
MOSFET (Metal Oxide)
30V
75A (Ta)
-
-
76nC @ 10V
3950pF @ 10V
-
-
60W (Tc)
8.4 mOhm @ 38A, 10V
150°C (TJ)
Surface Mount
ATPAK
-
2SK4066-DL-1EX
ON Semiconductor

MOSFET N-CH 60V TO263-2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12500pF @ 20V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 50A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager3.456
MOSFET (Metal Oxide)
60V
100A (Ta)
-
-
220nC @ 10V
12500pF @ 20V
-
-
1.65W (Ta), 90W (Tc)
4.7 mOhm @ 50A, 10V
150°C (TJ)
Surface Mount
TO-263-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
2SK4065-DL-1EX
ON Semiconductor

MOSFET N-CH 75V TO263-2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12200pF @ 20V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager3.392
MOSFET (Metal Oxide)
75V
100A (Ta)
-
-
220nC @ 10V
12200pF @ 20V
-
-
1.65W (Ta), 90W (Tc)
6 mOhm @ 50A, 10V
150°C (TJ)
Surface Mount
TO-263-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STD5407NNT4G
ON Semiconductor

MOSFET N-CH 40V DPAK-3

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Lager2.704
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NTLUS4C16NTAG
ON Semiconductor

MOSFET N-CH 30V 6UDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.37W (Ta)
  • Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFN (1.6x1.6)
  • Package / Case: 6-PowerUFDFN
Paket: 6-PowerUFDFN
Lager5.792
MOSFET (Metal Oxide)
30V
9.4A (Ta)
1.8V, 10V
1.1V @ 250µA
7.5nC @ 4.5V
690pF @ 15V
±12V
-
2.37W (Ta)
11.4 mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN (1.6x1.6)
6-PowerUFDFN
FDC642P_SB4N006
ON Semiconductor

MOSFET N-CH SSOT6

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Lager7.648
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SFT1342-E
ON Semiconductor

MOSFET P-CH 60V 12A IPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 15W (Tc)
  • Rds On (Max) @ Id, Vgs: 62 mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK/TP
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Paket: TO-251-3 Short Leads, IPak, TO-251AA
Lager3.536
MOSFET (Metal Oxide)
60V
12A (Ta)
4V, 10V
2.6V @ 1mA
26nC @ 10V
1150pF @ 20V
±20V
-
15W (Tc)
62 mOhm @ 6A, 10V
150°C (TJ)
Through Hole
IPAK/TP
TO-251-3 Short Leads, IPak, TO-251AA