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ON Semiconductor Produkte - Transistoren - JFETs

Aufzeichnungen 114
Page  3/4
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Voltage - Breakdown (V(BR)GSS)
Drain to Source Voltage (Vdss)
Current - Drain (Idss) @ Vds (Vgs=0)
Current Drain (Id) - Max
Voltage - Cutoff (VGS off) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Resistance - RDS(On)
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2SK715V-AC
ON Semiconductor

JFET N-CH 50MA 300MW SPA

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 15V
  • Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 5V
  • Current Drain (Id) - Max: 50mA
  • Voltage - Cutoff (VGS off) @ Id: 600mV @ 100µA
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 300mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-72
  • Supplier Device Package: 3-SPA
Paket: SC-72
Lager2.976
-
15V
10mA @ 5V
50mA
600mV @ 100µA
10pF @ 5V
-
300mW
125°C (TJ)
Through Hole
SC-72
3-SPA
2SK715U-AC
ON Semiconductor

JFET N-CH 50MA 300MW SPA

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 15V
  • Current - Drain (Idss) @ Vds (Vgs=0): 7.3mA @ 5V
  • Current Drain (Id) - Max: 50mA
  • Voltage - Cutoff (VGS off) @ Id: 600mV @ 100µA
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 300mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-72
  • Supplier Device Package: 3-SPA
Paket: SC-72
Lager7.760
-
15V
7.3mA @ 5V
50mA
600mV @ 100µA
10pF @ 5V
-
300mW
125°C (TJ)
Through Hole
SC-72
3-SPA
2SK715W
ON Semiconductor

JFET N-CH 50MA 300MW SPA

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 15V
  • Current - Drain (Idss) @ Vds (Vgs=0): 14.5mA @ 5V
  • Current Drain (Id) - Max: 50mA
  • Voltage - Cutoff (VGS off) @ Id: 600mV @ 100µA
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 300mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-72
  • Supplier Device Package: 3-SPA
Paket: SC-72
Lager4.448
-
15V
14.5mA @ 5V
50mA
600mV @ 100µA
10pF @ 5V
-
300mW
125°C (TJ)
Through Hole
SC-72
3-SPA
hot 2SK715V
ON Semiconductor

JFET N-CH 50MA 300MW SPA

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 15V
  • Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 5V
  • Current Drain (Id) - Max: 50mA
  • Voltage - Cutoff (VGS off) @ Id: 600mV @ 100µA
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 300mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-72
  • Supplier Device Package: 3-SPA
Paket: SC-72
Lager16.800
-
15V
10mA @ 5V
50mA
600mV @ 100µA
10pF @ 5V
-
300mW
125°C (TJ)
Through Hole
SC-72
3-SPA
2SK715U
ON Semiconductor

JFET N-CH 50MA 300MW SPA

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 15V
  • Current - Drain (Idss) @ Vds (Vgs=0): 7.3mA @ 5V
  • Current Drain (Id) - Max: 50mA
  • Voltage - Cutoff (VGS off) @ Id: 600mV @ 100µA
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 300mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-72
  • Supplier Device Package: 3-SPA
Paket: SC-72
Lager7.184
-
15V
7.3mA @ 5V
50mA
600mV @ 100µA
10pF @ 5V
-
300mW
125°C (TJ)
Through Hole
SC-72
3-SPA
hot 2SK596S-B
ON Semiconductor

JFET N-CH 1MA 100MW SPA

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 150µA @ 5V
  • Current Drain (Id) - Max: 1mA
  • Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 4.1pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-72
  • Supplier Device Package: 3-SPA
Paket: SC-72
Lager14.040
-
-
150µA @ 5V
1mA
500mV @ 1µA
4.1pF @ 5V
-
100mW
150°C (TJ)
Through Hole
SC-72
3-SPA
hot J112RLRAG
ON Semiconductor

JFET N-CH 35V 0.35W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 35V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 50 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager556.920
35V
-
5mA @ 15V
-
1V @ 1µA
-
50 Ohm
350mW
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot SMMBF4391LT1G
ON Semiconductor

JFET N-CH 30V 0.225W SOT23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 4V @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V (VGS)
  • Resistance - RDS(On): 30 Ohm
  • Power - Max: 225mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
Paket: TO-236-3, SC-59, SOT-23-3
Lager36.000
30V
30V
50mA @ 15V
-
4V @ 10nA
14pF @ 15V (VGS)
30 Ohm
225mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
TF256TH-5-TL-H
ON Semiconductor

JFET N-CH 1MA 100MW VTFP

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 240µA @ 2V
  • Current Drain (Id) - Max: 1mA
  • Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-VTFP
Paket: 3-SMD, Flat Leads
Lager6.240
-
-
240µA @ 2V
1mA
100mV @ 1µA
3.1pF @ 2V
-
100mW
150°C (TJ)
Surface Mount
3-SMD, Flat Leads
3-VTFP
TF256TH-4-TL-H
ON Semiconductor

JFET N-CH 1MA 100MW VTFP

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 140µA @ 2V
  • Current Drain (Id) - Max: 1mA
  • Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-VTFP
Paket: 3-SMD, Flat Leads
Lager2.640
-
-
140µA @ 2V
1mA
100mV @ 1µA
3.1pF @ 2V
-
100mW
150°C (TJ)
Surface Mount
3-SMD, Flat Leads
3-VTFP
TF256-5-TL-H
ON Semiconductor

JFET N-CH 1MA 30MW USFP

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 240µA @ 2V
  • Current Drain (Id) - Max: 1mA
  • Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
  • Resistance - RDS(On): -
  • Power - Max: 30mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: 3-USFP
Paket: SOT-1123
Lager4.688
-
-
240µA @ 2V
1mA
100mV @ 1µA
3.1pF @ 2V
-
30mW
150°C (TJ)
Surface Mount
SOT-1123
3-USFP
TF256-4-TL-H
ON Semiconductor

JFET N-CH 1MA 30MW USFP

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 140µA @ 2V
  • Current Drain (Id) - Max: 1mA
  • Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
  • Resistance - RDS(On): -
  • Power - Max: 30mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: 3-USFP
Paket: SOT-1123
Lager7.504
-
-
140µA @ 2V
1mA
100mV @ 1µA
3.1pF @ 2V
-
30mW
150°C (TJ)
Surface Mount
SOT-1123
3-USFP
hot TF252TH-4-TL-H
ON Semiconductor

JFET N-CH 1MA 100MW VTFP

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 140µA @ 2V
  • Current Drain (Id) - Max: 1mA
  • Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-VTFP
Paket: 3-SMD, Flat Leads
Lager67.428
-
-
140µA @ 2V
1mA
100mV @ 1µA
3.1pF @ 2V
-
100mW
150°C (TJ)
Surface Mount
3-SMD, Flat Leads
3-VTFP
TF252-5-TL-H
ON Semiconductor

JFET N-CH 1MA 30MW USFP

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 210µA @ 2V
  • Current Drain (Id) - Max: 1mA
  • Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
  • Resistance - RDS(On): -
  • Power - Max: 30mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-USFP
Paket: 3-SMD, Flat Leads
Lager2.880
-
-
210µA @ 2V
1mA
100mV @ 1µA
3.1pF @ 2V
-
30mW
150°C (TJ)
Surface Mount
3-SMD, Flat Leads
3-USFP
hot TF252-4-TL-H
ON Semiconductor

JFET N-CH 1MA 30MW USFP

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 140µA @ 2V
  • Current Drain (Id) - Max: 1mA
  • Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
  • Resistance - RDS(On): -
  • Power - Max: 30mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-USFP
Paket: 3-SMD, Flat Leads
Lager3.955.200
-
-
140µA @ 2V
1mA
100mV @ 1µA
3.1pF @ 2V
-
30mW
150°C (TJ)
Surface Mount
3-SMD, Flat Leads
3-USFP
hot TF202THC-5-TL-H
ON Semiconductor

JFET N-CH 1MA 100MW VTFP

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 210µA @ 5V
  • Current Drain (Id) - Max: 1mA
  • Voltage - Cutoff (VGS off) @ Id: 200mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-VTFP
Paket: 3-SMD, Flat Leads
Lager816.000
-
-
210µA @ 5V
1mA
200mV @ 1µA
3.5pF @ 5V
-
100mW
150°C (TJ)
Surface Mount
3-SMD, Flat Leads
3-VTFP
TF202THC-3-TL-H
ON Semiconductor

JFET N-CH 1MA 100MW VTFP

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 140µA @ 5V
  • Current Drain (Id) - Max: 1mA
  • Voltage - Cutoff (VGS off) @ Id: 200mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-VTFP
Paket: 3-SMD, Flat Leads
Lager3.136
-
-
140µA @ 5V
1mA
200mV @ 1µA
3.5pF @ 5V
-
100mW
-
Surface Mount
3-SMD, Flat Leads
3-VTFP
EC3A04B-3-TL-H
ON Semiconductor

JFET N-CH 10MA 100MW ECSP1006-3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
  • Current Drain (Id) - Max: 10mA
  • Voltage - Cutoff (VGS off) @ Id: 180mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
  • Resistance - RDS(On): 200 Ohm
  • Power - Max: 100mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-XFDFN
  • Supplier Device Package: 3-ECSP1006
Paket: 3-XFDFN
Lager6.192
-
30V
1.2mA @ 10V
10mA
180mV @ 1µA
4pF @ 10V
200 Ohm
100mW
150°C (TJ)
Surface Mount
3-XFDFN
3-ECSP1006
EC3A03B-TL-H
ON Semiconductor

JFET N-CH 1MA 100MW ECSP1006-3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Drain (Idss) @ Vds (Vgs=0): 50µA @ 20V
  • Current Drain (Id) - Max: 1mA
  • Voltage - Cutoff (VGS off) @ Id: 1.5V @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 1.7pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-XFDFN
  • Supplier Device Package: 3-ECSP1006
Paket: 3-XFDFN
Lager5.728
-
40V
50µA @ 20V
1mA
1.5V @ 1µA
1.7pF @ 10V
-
100mW
150°C (TJ)
Surface Mount
3-XFDFN
3-ECSP1006
TF252TH-5-TL-H
ON Semiconductor

JFET N-CH 0.1W 3VTFP

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 210µA @ 2V
  • Current Drain (Id) - Max: 1mA
  • Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-VTFP
Paket: 3-SMD, Flat Leads
Lager5.824
-
-
210µA @ 2V
1mA
100mV @ 1µA
3.1pF @ 2V
-
100mW
150°C (TJ)
Surface Mount
3-SMD, Flat Leads
3-VTFP
hot 2SK771-5-TB-E
ON Semiconductor

JFET N-CH 20MA 200MW SCP

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 10V
  • Current Drain (Id) - Max: 20mA
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 200mW
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-CP
Paket: TO-236-3, SC-59, SOT-23-3
Lager77.952
-
40V
5mA @ 10V
20mA
-
9pF @ 10V
-
200mW
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-CP
hot J110
ON Semiconductor

JFET N-CH 25V 0.31W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 25V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 18 Ohm
  • Power - Max: 310mW
  • Operating Temperature: 135°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA)
Lager12.780
25V
-
10mA @ 15V
-
500mV @ 1µA
-
18 Ohm
310mW
135°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
2N5639
ON Semiconductor

JFET N-CH 35V 0.31W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 35V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
  • Resistance - RDS(On): 60 Ohm
  • Power - Max: 310mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA)
Lager3.056
35V
30V
25mA @ 20V
-
-
10pF @ 12V (VGS)
60 Ohm
310mW
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
2N5462
ON Semiconductor

JFET P-CH 40V 0.35W TO92

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1.8V @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 135°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA)
Lager3.952
40V
-
4mA @ 15V
-
1.8V @ 1µA
7pF @ 15V
-
350mW
-65°C ~ 135°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
MPF4393G
ON Semiconductor

JFET N-CH 30V 0.35W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 15V (VGS)
  • Resistance - RDS(On): 100 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA)
Lager4.080
30V
30V
5mA @ 15V
-
500mV @ 10nA
10pF @ 15V (VGS)
100 Ohm
350mW
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
MPF4393
ON Semiconductor

JFET N-CH 30V 0.35W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 15V (VGS)
  • Resistance - RDS(On): 100 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA)
Lager2.480
30V
30V
5mA @ 15V
-
500mV @ 10nA
10pF @ 15V (VGS)
100 Ohm
350mW
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
MPF4392G
ON Semiconductor

JFET N-CH 30V 0.35W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2V @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 15V (VGS)
  • Resistance - RDS(On): 60 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA)
Lager4.752
30V
30V
25mA @ 15V
-
2V @ 10nA
10pF @ 15V (VGS)
60 Ohm
350mW
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot MPF4392
ON Semiconductor

JFET N-CH 30V 0.35W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2V @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 15V (VGS)
  • Resistance - RDS(On): 60 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA)
Lager7.584
30V
30V
25mA @ 15V
-
2V @ 10nA
10pF @ 15V (VGS)
60 Ohm
350mW
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
J112RLRA
ON Semiconductor

JFET N-CH 35V 0.35W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 35V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 50 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager5.568
35V
-
5mA @ 15V
-
1V @ 1µA
-
50 Ohm
350mW
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
J112RL1G
ON Semiconductor

JFET N-CH 35V 0.35W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 35V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 50 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager6.560
35V
-
5mA @ 15V
-
1V @ 1µA
-
50 Ohm
350mW
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3