Toshiba Semiconductor and Storage Produkte - Transistoren - JFETs

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Voltage - Breakdown (V(BR)GSS)	Drain to Source Voltage (Vdss)	Current - Drain (Idss) @ Vds (Vgs=0)	Current Drain (Id) - Max	Voltage - Cutoff (VGS off) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Resistance - RDS(On)	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SK208-O(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET N-CH S-MINI FET FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 600µA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V Resistance - RDS(On): - Power - Max: 100mW Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	Paket: TO-236-3, SC-59, SOT-23-3	Lager3.104	-	-	600µA @ 10V	-	400mV @ 100nA	8.2pF @ 10V	-	100mW	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59
2SK3320-BL(TE85L,F	Toshiba Semiconductor and Storage	JFET DUAL N-CH USV FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Resistance - RDS(On): - Power - Max: 200mW Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	Paket: 5-TSSOP, SC-70-5, SOT-353	Lager4.000	-	-	6mA @ 10V	-	200mV @ 100nA	13pF @ 10V	-	200mW	125°C (TJ)	Surface Mount	5-TSSOP, SC-70-5, SOT-353	USV
2SK208-R(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET N-CH 50V S-MINI FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 300µA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V Resistance - RDS(On): - Power - Max: 100mW Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	Paket: TO-236-3, SC-59, SOT-23-3	Lager6.432	-	-	300µA @ 10V	-	400mV @ 100nA	8.2pF @ 10V	-	100mW	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
2SK879-GR(TE85L,F)	Toshiba Semiconductor and Storage	JFET N-CH 0.1W USM FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V Resistance - RDS(On): - Power - Max: 100mW Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	Paket: SC-70, SOT-323	Lager5.024	-	-	2.6mA @ 10V	-	400mV @ 100nA	8.2pF @ 10V	-	100mW	125°C (TJ)	Surface Mount	SC-70, SOT-323	USM
2SK2145-Y(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET 2N-CH JFET 50V SMV FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Resistance - RDS(On): - Power - Max: 300mW Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	Paket: SC-74A, SOT-753	Lager26.616	-	-	1.2mA @ 10V	-	200mV @ 100nA	13pF @ 10V	-	300mW	125°C (TJ)	Surface Mount	SC-74A, SOT-753	SMV
2SK2145-GR(TE85L,F	Toshiba Semiconductor and Storage	MOSFET 2N-CH JFET 50V SMV FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Resistance - RDS(On): - Power - Max: 300mW Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	Paket: SC-74A, SOT-753	Lager5.040	-	-	2.6mA @ 10V	-	200mV @ 100nA	13pF @ 10V	-	300mW	125°C (TJ)	Surface Mount	SC-74A, SOT-753	SMV
2SK2145-BL(TE85L,F	Toshiba Semiconductor and Storage	JFET N-CH 50V SMV FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Resistance - RDS(On): - Power - Max: 300mW Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	Paket: SC-74A, SOT-753	Lager148.380	-	-	6mA @ 10V	-	200mV @ 100nA	13pF @ 10V	-	300mW	125°C (TJ)	Surface Mount	SC-74A, SOT-753	SMV
2SK880-BL(TE85L,F)	Toshiba Semiconductor and Storage	JFET N-CH 50V 0.1W USM FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 50V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1.5V @ 100nA Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Resistance - RDS(On): - Power - Max: 100mW Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	Paket: SC-70, SOT-323	Lager25.356	50V	-	6mA @ 10V	-	1.5V @ 100nA	13pF @ 10V	-	100mW	125°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70
2SK880GRTE85LF	Toshiba Semiconductor and Storage	JFET N-CH 50V 0.1W USM FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 50V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1.5V @ 100nA Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Resistance - RDS(On): - Power - Max: 100mW Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	Paket: SC-70, SOT-323	Lager50.250	50V	-	2.6mA @ 10V	-	1.5V @ 100nA	13pF @ 10V	-	100mW	125°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70
2SK880-Y(TE85L,F)	Toshiba Semiconductor and Storage	JFET N-CH 50V 0.1W USM FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 50V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1.5V @ 100nA Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Resistance - RDS(On): - Power - Max: 100mW Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	Paket: SC-70, SOT-323	Lager689.706	50V	-	1.2mA @ 10V	-	1.5V @ 100nA	13pF @ 10V	-	100mW	125°C (TJ)	Surface Mount	SC-70, SOT-323	USM
2SK879-Y(TE85L,F)	Toshiba Semiconductor and Storage	JFET N-CH 0.1W USM FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V Resistance - RDS(On): - Power - Max: 100mW Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	Paket: SC-70, SOT-323	Lager25.206	-	-	1.2mA @ 10V	-	400mV @ 100nA	8.2pF @ 10V	-	100mW	125°C (TJ)	Surface Mount	SC-70, SOT-323	USM
2SK208-Y(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET N-CH 50V S-MINI FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V Resistance - RDS(On): - Power - Max: 100mW Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	Paket: TO-236-3, SC-59, SOT-23-3	Lager22.500	-	-	1.2mA @ 10V	-	400mV @ 100nA	8.2pF @ 10V	-	100mW	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
2SK208-GR(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET N-CH S-MINI FET FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V Resistance - RDS(On): - Power - Max: 100mW Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	Paket: TO-236-3, SC-59, SOT-23-3	Lager22.878	-	-	2.6mA @ 10V	-	400mV @ 100nA	8.2pF @ 10V	-	100mW	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59