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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 61.8A TO-3P(N)
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.7V @ 3.1mA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 300V
- Vgs (Max): ±30V
- FET Feature: Super Junction
- Power Dissipation (Max): 400W (Tc)
- Rds On (Max) @ Id, Vgs: 38 mOhm @ 30.9A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P(N)
- Package / Case: TO-3P-3, SC-65-3
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Paket: TO-3P-3, SC-65-3 |
Lager4.848 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 58A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 58A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 29A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Paket: TO-220-3 |
Lager7.776 |
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Toshiba Semiconductor and Storage |
MOSFET 2P-CH 20V 0.72A ES6
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 720mA
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
- Power - Max: 150mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6 (1.6x1.6)
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Paket: SOT-563, SOT-666 |
Lager7.456 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.05W CST3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 50mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
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Paket: SC-101, SOT-883 |
Lager2.624 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 200MW SMINI
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 300MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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Paket: TO-236-3, SC-59, SOT-23-3 |
Lager4.656 |
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Toshiba Semiconductor and Storage |
TRANS 2NPN PREBIAS 0.1W ES6
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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Paket: SOT-563, SOT-666 |
Lager4.688 |
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Toshiba Semiconductor and Storage |
TRANS 2NPN PREBIAS 0.2W US6
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: -
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Paket: 6-TSSOP, SC-88, SOT-363 |
Lager23.364 |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 100V 700MA SFLAT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 700mA
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 700mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: S-FLAT (1.6x3.5)
- Operating Temperature - Junction: -40°C ~ 150°C
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Paket: SOD-123F |
Lager4.064 |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 500MA CST2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 350mV @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30µA @ 10V
- Capacitance @ Vr, F: 42pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-882
- Supplier Device Package: CST2
- Operating Temperature - Junction: 125°C (Max)
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Paket: SOD-882 |
Lager5.328 |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 20V 50MA ESC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 50mA
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 50mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500nA @ 20V
- Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: ESC
- Operating Temperature - Junction: 125°C (Max)
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Paket: SC-79, SOD-523 |
Lager95.520 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 0.5MA LSTM
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 0.5mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
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Paket: TO-226-3, TO-92-3 Long Body |
Lager4.384 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 200MA SMV
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 200mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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Paket: SC-74A, SOT-753 |
Lager28.806 |
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Toshiba Semiconductor and Storage |
IC PWR SWITCH P-CHAN 1:1 WCSP6E
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: P-Channel
- Interface: On/Off
- Voltage - Load: 1.4 V ~ 5.5 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 1.11A
- Rds On (Typ): 31 mOhm
- Input Type: Non-Inverting
- Features: Load Discharge
- Fault Protection: Current Limiting (Fixed), Over Temperature
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 6-UFBGA, WLCSP
- Supplier Device Package: 6-WCSPE (0.80x1.2)
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Paket: 6-UFBGA, WLCSP |
Lager100.068 |
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Toshiba Semiconductor and Storage |
IC MOTOR DRIVER PAR 28HSOP
- Motor Type - Stepper: Bipolar
- Motor Type - AC, DC: -
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (4)
- Interface: Parallel
- Technology: Power MOSFET
- Step Resolution: 1, 1/2, 1/4
- Applications: General Purpose
- Current - Output: 2.4A
- Voltage - Supply: 4.75 V ~ 5.25 V
- Voltage - Load: 10 V ~ 38 V
- Operating Temperature: -20°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs
- Supplier Device Package: 28-HSOP
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Paket: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs |
Lager3.824 |
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Toshiba Semiconductor and Storage |
IC GATE OR 4CH 2-INP 14-TSSOP
- Logic Type: OR Gate
- Number of Circuits: 4
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 2 V ~ 5.5 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.5V
- Logic Level - High: 1.5V
- Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-TSSOP
- Package / Case: 14-TSSOP (0.173", 4.40mm Width)
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Paket: 14-TSSOP (0.173", 4.40mm Width) |
Lager6.816 |
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Toshiba Semiconductor and Storage |
IC GATE NOR 2-INPUT 1CH ESV
- Logic Type: NOR Gate
- Number of Circuits: 1
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 1.65 V ~ 5.5 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 32mA, 32mA
- Logic Level - Low: -
- Logic Level - High: -
- Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: ESV
- Package / Case: SOT-553
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Paket: SOT-553 |
Lager28.794 |
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Toshiba Semiconductor and Storage |
IC D-TYPE POS TRG SNGL 16DIP
- Function: Reset
- Type: D-Type
- Output Type: Differential
- Number of Elements: 1
- Number of Bits per Element: 4
- Clock Frequency: 63MHz
- Max Propagation Delay @ V, Max CL: 24ns @ 6V, 50pF
- Trigger Type: Positive Edge
- Current - Output High, Low: 5.2mA, 5.2mA
- Voltage - Supply: 2 V ~ 6 V
- Current - Quiescent (Iq): 4µA
- Input Capacitance: 5pF
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 16-DIP (0.300", 7.62mm)
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Paket: 16-DIP (0.300", 7.62mm) |
Lager6.144 |
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Toshiba Semiconductor and Storage |
OPTOISO 5KV OPEN COLLECTOR 8SMD
- Number of Channels: 1
- Inputs - Side 1/Side 2: 1/0
- Voltage - Isolation: 5000Vrms
- Common Mode Transient Immunity (Min): 20kV/µs
- Input Type: DC
- Output Type: Open Collector
- Current - Output / Channel: 50mA
- Data Rate: 15MBd
- Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
- Rise / Fall Time (Typ): 3ns, 12ns
- Voltage - Forward (Vf) (Typ): 1.55V
- Current - DC Forward (If) (Max): 20mA
- Voltage - Supply: 2.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Gull Wing
- Supplier Device Package: 8-SMD
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Paket: 8-SMD, Gull Wing |
Lager22.974 |
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Toshiba Semiconductor and Storage |
IC FF D-TYPE SNGL 8BIT 20TSSOPB
- Function: Standard
- Type: D-Type
- Output Type: Tri-State, Non-Inverted
- Number of Elements: 1
- Number of Bits per Element: 8
- Clock Frequency: 150MHz
- Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF
- Trigger Type: Positive Edge
- Current - Output High, Low: 24mA, 24mA
- Voltage - Supply: 2 V ~ 3.6 V
- Current - Quiescent (Iq): 10µA
- Input Capacitance: 7pF
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
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Paket: 20-TSSOP (0.173", 4.40mm Width) |
Lager3.072 |
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