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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 40A 3DP 2-7K1A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 20A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: DP
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager7.600 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 7.5A SOP8 2-6J1B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 3.8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP (5.5x6.0)
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
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Paket: 8-SOIC (0.173", 4.40mm Width) |
Lager7.248 |
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Toshiba Semiconductor and Storage |
MOSFET P CH 12V 12A UDFN6B
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 37.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 10V
- Vgs (Max): ±6V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 4A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFNB (2x2)
- Package / Case: 6-WDFN Exposed Pad
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Paket: 6-WDFN Exposed Pad |
Lager45.756 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 40A 8TSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 13.3 mOhm @ 9A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.3x3.3)
- Package / Case: 8-PowerVDFN
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Paket: 8-PowerVDFN |
Lager51.828 |
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Toshiba Semiconductor and Storage |
MOSFET P CH 30V 4A SOT-23F
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 71 mOhm @ 3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23F
- Package / Case: SOT-23-3 Flat Leads
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Paket: SOT-23-3 Flat Leads |
Lager209.658 |
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Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Paket: TO-226-3, TO-92-3 Long Body |
Lager6.272 |
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Toshiba Semiconductor and Storage |
TRANS NPN 100V 5A TO220NIS
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 400mA, 4A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V
- Power - Max: 30W
- Frequency - Transition: 12MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
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Paket: TO-220-3 Full Pack |
Lager3.472 |
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Toshiba Semiconductor and Storage |
TRANS PNP 120V 0.1A USM
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 100MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
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Paket: SC-70, SOT-323 |
Lager105.714 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 0.1W SSM
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
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Paket: SC-75, SOT-416 |
Lager3.248 |
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Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.2W US6
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Paket: 6-TSSOP, SC-88, SOT-363 |
Lager7.440 |
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Toshiba Semiconductor and Storage |
TRANS NPN/PNP PREBIAS 0.2W US6
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Paket: 6-TSSOP, SC-88, SOT-363 |
Lager52.494 |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 60V
- Capacitance @ Vr, F: 345pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: L-FLAT?
- Supplier Device Package: L-FLAT? (4x5.5)
- Operating Temperature - Junction: -40°C ~ 125°C
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Paket: L-FLAT? |
Lager2.416 |
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Toshiba Semiconductor and Storage |
DIODE SW GP 80V 100MA ESC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10nA @ 80V
- Capacitance @ Vr, F: 6pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SC-79
- Operating Temperature - Junction: 150°C (Max)
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Paket: SC-79, SOD-523 |
Lager80.424 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 250MA 3HSIP
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 250mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: 3-HSIP
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Paket: TO-220-3 Full Pack |
Lager6.704 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 2.8V 300MA 4DFN
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 2.8V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 300mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 65µA ~ 78µA
- PSRR: 70dB (1kHz)
- Control Features: Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-UDFN Exposed Pad
- Supplier Device Package: 4-DFN (1x1)
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Paket: 4-UDFN Exposed Pad |
Lager6.176 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 4V 500MA PW-MOLD
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 29V
- Voltage - Output (Min/Fixed): 4V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.65V @ 500mA
- Current - Output: 500mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 1.4mA ~ 25mA
- PSRR: 68dB (120Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PW-MOLD
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager15.912 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 0.65V 500MA 5DFN
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 0.65V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 500mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 55µA ~ 68µA
- PSRR: 70dB (1kHz)
- Control Features: Enable
- Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-XDFN Exposed Pad
- Supplier Device Package: 5-DFNB (1.2x1.2)
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Paket: 4-XDFN Exposed Pad |
Lager43.512 |
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Toshiba Semiconductor and Storage |
IC LOAD SWITCH 8CH 0.5A 18SOP
- Switch Type: General Purpose
- Number of Outputs: 8
- Ratio - Input:Output: 1:1
- Output Configuration: Low Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 50V (Max)
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): -
- Rds On (Typ): -
- Input Type: Inverting
- Features: -
- Fault Protection: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 18-SOIC (0.276", 7.00mm Width)
- Supplier Device Package: 18-SOP
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Paket: 18-SOIC (0.276", 7.00mm Width) |
Lager3.232 |
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Toshiba Semiconductor and Storage |
IC EEPROM 8GBIT 25NS 48TSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM - NAND
- Memory Size: 8Gb (1G x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP I
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Paket: 48-TFSOP (0.724", 18.40mm Width) |
Lager3.456 |
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Toshiba Semiconductor and Storage |
IC EEPROM 4GBIT 25NS 67FBGA
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM - NAND
- Memory Size: 4Gb (512M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 67-VFBGA
- Supplier Device Package: 67-VFBGA (6.5x8)
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Paket: 67-VFBGA |
Lager6.064 |
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Toshiba Semiconductor and Storage |
IC INVERTER 8-INPUT 20TSSOP
- Logic Type: Buffer, Inverting
- Number of Elements: 1
- Number of Bits per Element: 8
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 24mA, 24mA
- Voltage - Supply: 1.65 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 20-TSSOP
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Paket: 20-TSSOP (0.173", 4.40mm Width) |
Lager4.784 |
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Toshiba Semiconductor and Storage |
IC OP AMP GP CMOS USV
- Amplifier Type: General Purpose
- Number of Circuits: 1
- Output Type: -
- Slew Rate: 0.5 V/µs
- Gain Bandwidth Product: -
- -3db Bandwidth: -
- Current - Input Bias: 1pA
- Voltage - Input Offset: 2mV
- Current - Supply: 60µA
- Current - Output / Channel: -
- Voltage - Supply, Single/Dual (±): 1.5 V ~ 7 V, ±0.75 V ~ 3.5 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: USV
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Paket: 5-TSSOP, SC-70-5, SOT-353 |
Lager25.320 |
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Toshiba Semiconductor and Storage |
IC MUX/DEMUX 2:1 DIFF PCI 42TQFN
- Applications: PCIe
- Multiplexer/Demultiplexer Circuit: 2:1
- Switch Circuit: SPDT
- Number of Channels: 8
- On-State Resistance (Max): 13.5 Ohm
- Voltage - Supply, Single (V+): 3 V ~ 3.6 V
- Voltage - Supply, Dual (V±): -
- -3db Bandwidth: 10GHz
- Features: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 42-UFQFN Exposed Pad
- Supplier Device Package: 42-TQFN (9x3.5)
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Paket: 42-UFQFN Exposed Pad |
Lager6.432 |
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Toshiba Semiconductor and Storage |
LED LETERAS COOL WHT 6500K 2SMD
- Color: White, Cool
- CCT (K): 6500K
- Flux @ 85°C, Current - Test: -
- Flux @ 25°C, Current - Test: 133 lm (120 lm ~ 145 lm)
- Current - Test: 350mA
- Voltage - Forward (Vf) (Typ): 2.85V
- Lumens/Watt @ Current - Test: 133 lm/W
- CRI (Color Rendering Index): 70
- Current - Max: 1A
- Viewing Angle: 120°
- Mounting Type: Surface Mount
- Package / Case: 1414 (3535 Metric)
- Supplier Device Package: 3535
- Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
- Height - Seated (Max): 0.080" (2.03mm)
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Paket: 1414 (3535 Metric) |
Lager4.860 |
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Toshiba Semiconductor and Storage |
TVS DIODE 3VWM ESV PAC
- Type: Zener
- Unidirectional Channels: 4
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 3V
- Voltage - Breakdown (Min): 5.8V
- Voltage - Clamping (Max) @ Ipp: -
- Current - Peak Pulse (10/1000µs): -
- Power - Peak Pulse: -
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 55pF @ 1MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
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Paket: SOT-553 |
Lager30.192 |
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Toshiba Semiconductor and Storage |
MAGNETIC SWITCH UNIPOLAR UFV
- Function: Unipolar Switch
- Technology: Hall Effect
- Polarization: South Pole
- Sensing Range: 2.5mT Trip, 0.3mT Release
- Test Condition: 25°C
- Voltage - Supply: 2.3 V ~ 3.6 V
- Current - Supply (Max): 1.3mA
- Current - Output (Max): 5mA
- Output Type: Open Drain
- Features: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 6-SMD (5 Leads), Flat Lead
- Supplier Device Package: UFV
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Paket: 6-SMD (5 Leads), Flat Lead |
Lager3.924 |
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Toshiba Semiconductor and Storage |
OPTOISOLATOR 3.75KV TRANS 4-SO
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 100% @ 5mA
- Current Transfer Ratio (Max): 300% @ 5mA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: AC, DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 4-SOIC (0.179", 4.55mm)
- Supplier Device Package: 4-SO
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Paket: 4-SOIC (0.179", 4.55mm) |
Lager2.664 |
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Toshiba Semiconductor and Storage |
OPTOISO 5KV GATE DRIVER 6SDIP GW
- Technology: Optical Coupling
- Number of Channels: 1
- Voltage - Isolation: 5000Vrms
- Common Mode Transient Immunity (Min): 15kV/µs
- Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
- Pulse Width Distortion (Max): -
- Rise / Fall Time (Typ): 50ns, 50ns
- Current - Output High, Low: 1.5A, 1.5A
- Current - Peak Output: 2A
- Voltage - Forward (Vf) (Typ): 1.57V
- Current - DC Forward (If) (Max): 20mA
- Voltage - Supply: 15 V ~ 30 V
- Operating Temperature: -40°C ~ 100°C
- Mounting Type: Surface Mount
- Package / Case: 6-SOIC (0.268", 6.80mm Width)
- Supplier Device Package: 6-SDIP Gull Wing
- Approvals: UR
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Paket: 6-SOIC (0.268", 6.80mm Width) |
Lager7.056 |
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Toshiba Semiconductor and Storage |
TRANSISTOR ARRAY INTERFACE DRIVE
- Switch Type: -
- Number of Outputs: -
- Ratio - Input:Output: -
- Output Configuration: -
- Output Type: -
- Interface: -
- Voltage - Load: -
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): -
- Rds On (Typ): -
- Input Type: -
- Features: -
- Fault Protection: -
- Operating Temperature: -
- Package / Case: 18-DIP (0.300", 7.62mm)
- Supplier Device Package: 18-DIP
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Paket: 18-DIP (0.300", 7.62mm) |
Lager13.806 |
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Toshiba Semiconductor and Storage |
IC FF D-TYPE SNGL 8BIT 20SOIC
- Function: Standard
- Type: D-Type
- Output Type: Tri-State, Non-Inverted
- Number of Elements: 1
- Number of Bits per Element: 8
- Clock Frequency: 90MHz
- Max Propagation Delay @ V, Max CL: 32ns @ 6V, 150pF
- Trigger Type: Positive Edge
- Current - Output High, Low: 7.8mA, 7.8mA
- Voltage - Supply: 2 V ~ 6 V
- Current - Quiescent (Iq): 4µA
- Input Capacitance: 3pF
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-SOIC (0.295", 7.50mm Width)
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Paket: 20-SOIC (0.295", 7.50mm Width) |
Lager12.408 |
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