Toshiba Semiconductor and Storage Produkte - Transistoren - Bipolar (BJT) - Einzeln, mit Vorspannung | Heisener Electronics
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Toshiba Semiconductor and Storage Produkte - Transistoren - Bipolar (BJT) - Einzeln, mit Vorspannung

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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Resistor - Base (R1) (Ohms)
Resistor - Emitter Base (R2) (Ohms)
DC Current Gain (hFE) (Min) @ Ic, Vce
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
Frequency - Transition
Power - Max
Mounting Type
Package / Case
Supplier Device Package
RN2409-LXHF
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SMINI

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 47 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
Paket: -
Lager18.000
100 mA
50 V
47 kOhms
22 kOhms
70 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
200 MHz
200 mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
RN2116-LXHF-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 4.7 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
Paket: -
Lager18.000
100 mA
50 V
4.7 kOhms
10 kOhms
50 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
200 MHz
100 mW
Surface Mount
SC-75, SOT-416
SSM
RN2103MFV-L3F-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 22 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 150 mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
Paket: -
Lager240
100 mA
50 V
22 kOhms
22 kOhms
70 @ 10mA, 5V
300mV @ 500µA, 5mA
500nA
250 MHz
150 mW
Surface Mount
SOT-723
VESM
RN2101-LXHF-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 4.7 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
Paket: -
Lager17.949
100 mA
50 V
4.7 kOhms
4.7 kOhms
30 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
200 MHz
100 mW
Surface Mount
SC-75, SOT-416
SSM
RN2306-LXHF
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 4.7 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
Paket: -
Lager8.676
100 mA
50 V
4.7 kOhms
47 kOhms
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
200 MHz
100 mW
Surface Mount
SC-70, SOT-323
SC-70
RN1105MFV-L3XHF-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 2.2 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 150 mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
Paket: -
Lager21.480
100 mA
50 V
2.2 kOhms
47 kOhms
80 @ 10mA, 5V
300mV @ 500µA, 5mA
500nA
-
150 mW
Surface Mount
SOT-723
VESM
RN1105-LXHF-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 2.2 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
Paket: -
Lager14.949
100 mA
50 V
2.2 kOhms
47 kOhms
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250 MHz
100 mW
Surface Mount
SC-75, SOT-416
SSM
RN2112-LF-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 22 kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
Paket: -
Lager9.000
100 mA
50 V
22 kOhms
-
120 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
200 MHz
100 mW
Surface Mount
SC-75, SOT-416
SSM
RN1304-LF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 47 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
Paket: -
Request a Quote
100 mA
50 V
47 kOhms
47 kOhms
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250 MHz
100 mW
Surface Mount
SC-70, SOT-323
SC-70
RN1410-LF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SMINI

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 4.7 kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
Paket: -
Lager22.500
100 mA
50 V
4.7 kOhms
-
120 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
250 MHz
200 mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
RN2406-LXHF
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SMINI

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 4.7 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
Paket: -
Lager17.400
100 mA
50 V
4.7 kOhms
47 kOhms
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
200 MHz
200 mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
RN1307-LF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 10 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
Paket: -
Lager8.610
100 mA
50 V
10 kOhms
47 kOhms
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250 MHz
100 mW
Surface Mount
SC-70, SOT-323
SC-70
RN1316-LXHF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 4.7 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
Paket: -
Request a Quote
100 mA
50 V
4.7 kOhms
10 kOhms
50 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250 MHz
100 mW
Surface Mount
SC-70, SOT-323
SC-70
RN1113-LXHF-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 47 kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
Paket: -
Lager18.000
100 mA
50 V
47 kOhms
-
120 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
250 MHz
100 mW
Surface Mount
SC-75, SOT-416
SSM
RN2303-LXHF
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 22 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
Paket: -
Lager18.000
100 mA
50 V
22 kOhms
22 kOhms
70 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
200 MHz
100 mW
Surface Mount
SC-70, SOT-323
SC-70
RN1103MFV-L3F-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 22 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 150 mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
Paket: -
Lager525
100 mA
50 V
22 kOhms
22 kOhms
70 @ 10mA, 5V
300mV @ 500µA, 5mA
500nA
-
150 mW
Surface Mount
SOT-723
VESM
RN2424-TE85L-F
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SMINI

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 10 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
Paket: -
Lager14.481
800 mA
50 V
10 kOhms
10 kOhms
90 @ 100mA, 1V
250mV @ 1mA, 50mA
500nA
200 MHz
200 mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
RN1117-TE85L-F
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 10 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
Paket: -
Lager2.694
100 mA
50 V
10 kOhms
4.7 kOhms
30 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250 MHz
100 mW
Surface Mount
SC-75, SOT-416
SSM
RN1309-LF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 47 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
Paket: -
Request a Quote
100 mA
50 V
47 kOhms
22 kOhms
70 @ 5mA, 5V
300mV @ 250µA, 5mA
500nA
250 MHz
100 mW
Surface Mount
SC-70, SOT-323
SC-70
RN1413-LF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SMINI

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 47 kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
Paket: -
Lager1.500
100 mA
50 V
47 kOhms
-
120 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
250 MHz
200 mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
RN1411-LF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SMINI

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 10 kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
Paket: -
Lager1.899
100 mA
50 V
10 kOhms
-
120 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
250 MHz
200 mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
RN2403-LXHF
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SMINI

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 22 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
Paket: -
Lager18.000
100 mA
50 V
22 kOhms
22 kOhms
70 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
200 MHz
200 mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
RN1412-LF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SMINI

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 22 kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
Paket: -
Lager300
100 mA
50 V
22 kOhms
-
120 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
250 MHz
200 mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
RN1416-LXHF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SMINI

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 4.7 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
Paket: -
Lager16.470
100 mA
50 V
4.7 kOhms
10 kOhms
50 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250 MHz
200 mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
RN2109-LXHF-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 47 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
Paket: -
Lager18.000
100 mA
50 V
47 kOhms
22 kOhms
70 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
200 MHz
100 mW
Surface Mount
SC-75, SOT-416
SSM
RN1106MFV-L3XHF-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 4.7 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 150 mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
Paket: -
Lager24.000
100 mA
50 V
4.7 kOhms
47 kOhms
80 @ 1mA, 5V
300mV @ 500µA, 5mA
500nA
-
150 mW
Surface Mount
SOT-723
VESM
RN1415-LF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SMINI

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 2.2 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
Paket: -
Lager8.970
100 mA
50 V
2.2 kOhms
10 kOhms
50 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250 MHz
200 mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
RN1313-LXHF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 47 kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
Paket: -
Lager18.000
100 mA
50 V
47 kOhms
-
120 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
250 MHz
100 mW
Surface Mount
SC-70, SOT-323
SC-70