The latest generation of 1200 V EliteSiC silicon carbide M3S devices | Heisener Electronics
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The latest generation of 1200 V EliteSiC silicon carbide M3S devices

Technology Cover
Nach Datum: 2023-05-11, ON Semiconductor

Onsemi, a leader in smart power and intelligent sensing technology, has launched the latest generation of 1200V EliteSiC Silicon Carbide (SiC) M3S devices to help power electronics engineers achieve greater energy efficiency and lower system costs. The new product line includes EliteSiC MosFeTs and modules that help increase switching speeds for a growing number of 800-V electric vehicle (EV) on-board chargers (OBCs) and energy infrastructure applications such as EV DC fast charging, solar solutions, and energy storage.

         

Car gauge class 1200 V EliteSiC mosFEts are designed for high power OBCs up to 22 kW and high voltage to low voltage DC-DC converters. M3S technology was developed specifically for high speed switching applications and has the leading switching loss quality factor of similar products. Asif Jakwani, onsemi Senior Vice President and general manager, Advanced Power Division, said: "The latest generation of OnSemi automotive and industrial EliteSiC M3S products will help designers reduce their application footprint and reduce system heat dissipation requirements. This helps designers develop high power converters with higher energy efficiency and power density."

The portfolio also includes a new EliteSiC M3S device with a half-bridge Power Integration module (PIMs) featuring industry-leading ultra-low Rds (on) in a standard F2 package. These modules are ideal for industrial applications in the DC-AC, AC-DC, and DC-DC high-power conversion phases. They offer higher integration and achieve balanced current sharing and heat distribution between parallel switches using an optimized direct bonded copper design. These PIMs are designed to provide high power density suitable for energy infrastructure, DC fast charging for electric vehicles, and uninterruptible power supplies (UPS).

    

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