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HGT1S20N36G3VLS

HGT1S20N36G3VLS

HGT1S20N36G3VLS

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Teilenummer HGT1S20N36G3VLS
Hersteller Fairchild Semiconductor
Beschreibung IGBT, 37.7A, 355V, N-CHANNEL
Datenblatt
Paket -
ECAD
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HGT1S20N36G3VLS Spezifikationen

HerstellerFairchild Semiconductor
RubrikDiskrete Halbleiterprodukte - Transistoren - IGBTs - Einzeln
Paket-
ECAD
Serie-
IGBT-Typ-
Spannung - Kollektor-Emitter-Durchbruch (max.)415 V
Aktuell - Sammler (Ic) (Max)37.7 A
Strom - Kollektorimpuls (Icm)-
Vce (ein) (Max) @ Vge, Ic1.9V @ 5V, 20A
Leistung max150 W
Energie wechseln-
EingabetypLogic
Gate Ladung28.7 nC
Td (ein / aus) bei 25 ° C-/15µs
Testbedingung300V, 10A, 25Ohm, 5V
Reverse Wiederherstellungszeit (trr)-
Betriebstemperatur-40°C ~ 175°C (TJ)
BefestigungsartSurface Mount
Paket / FallTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
LieferantengerätepaketTO-263AB

HGT1S20N36G3VLS Packaging

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HGT1S20N36G3VLS FAQ

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  • 3. Are the HGT1S20N36G3VLS price and inventory displayed accurate?
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  • 6. What is the process for return or replacement of HGT1S20N36G3VLS?
    All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the HGT1S20N36G3VLS we delivered, we will accept the replacement or return of the HGT1S20N36G3VLS only when all of the below conditions are fulfilled:
    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
    (2)We are informed of the defect described above within 90 days after the delivery of HGT1S20N36G3VLS.
    (3)The PartNo is unused and only in the original unpacked packaging.
    Two processes to return the products:
    (1)Inform us within 90 days
    (2)Obtain Requesting Return Authorizations
  • 7.How to contact us to get technical supports, such as HGT1S20N36G3VLS pin diagram, HGT1S20N36G3VLS datasheet?
    If you need any after-sales service, please do not hesitate to contact us.

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