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Diodes Incorporated Produkte - Transistoren - FETs, MOSFET - Einzeln

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Paket
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Anzahl
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
DMT10H072LFDFQ-7
Diodes Incorporated

MOSFET N-CH 100V 4A 6UDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
Paket: -
Lager80.373
MOSFET (Metal Oxide)
100 V
4A (Ta)
4.5V, 10V
3V @ 250µA
4.5 nC @ 10 V
228 pF @ 50 V
±20V
-
1.8W (Ta)
62mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
DMT69M5LFVW-7
Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 40.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.74W (Ta), 20.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
Paket: -
Request a Quote
MOSFET (Metal Oxide)
60 V
14.8A (Ta), 40.6A (Tc)
4.5V, 10V
2.5V @ 250µA
28.4 nC @ 10 V
1406 pF @ 30 V
±20V
-
2.74W (Ta), 20.5W (Tc)
8.3mOhm @ 13.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
DMN3032LQ-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT23 T&R 1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 481 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 5.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: -
Request a Quote
MOSFET (Metal Oxide)
30 V
5.4A (Ta)
4.5V, 10V
2V @ 250µA
10.1 nC @ 10 V
481 pF @ 15 V
±20V
-
800mW
31mOhm @ 5.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMTH43M7LFG-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2182 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 65.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
Paket: -
Request a Quote
MOSFET (Metal Oxide)
40 V
100A (Tc)
5V, 10V
2.5V @ 250µA
30 nC @ 10 V
2182 pF @ 20 V
±20V
-
3.5W (Ta), 65.2W (Tc)
3mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
DMTH6010LPSWQ-13
Diodes Incorporated

MOSFET N-CH 60V 15.5A/80A PWRDI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.9W (Ta), 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8 (Type Q)
  • Package / Case: 8-PowerTDFN
Paket: -
Lager7.500
MOSFET (Metal Oxide)
60 V
15.5A (Ta), 80A (Tc)
4.5V, 10V
3V @ 250µA
41.3 nC @ 10 V
2090 pF @ 30 V
±20V
-
2.9W (Ta), 75W (Tc)
8mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8 (Type Q)
8-PowerTDFN
DMT67M8LK3-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V TO252 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 89.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Paket: -
Request a Quote
MOSFET (Metal Oxide)
60 V
87A (Tc)
4.5V, 10V
2.5V @ 250µA
37.5 nC @ 10 V
2130 pF @ 30 V
±20V
-
3.1W (Ta), 89.3W (Tc)
7mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
DMN3066L-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT23 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 810mW (Ta)
  • Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: -
Request a Quote
MOSFET (Metal Oxide)
30 V
3.6A (Ta)
2.5V, 4.5V
1.5V @ 250µA
4.1 nC @ 4.5 V
353 pF @ 10 V
±12V
-
810mW (Ta)
67mOhm @ 2.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMP1012UFDF-13
Diodes Incorporated

MOSFET P-CH 12V 12.6A/20A 6UDFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1344 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 720mW (Ta)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
Paket: -
Request a Quote
MOSFET (Metal Oxide)
12 V
12.6A (Ta), 20A (Tc)
1.8V, 4.5V
900mV @ 250µA
31 nC @ 8 V
1344 pF @ 10 V
±8V
-
720mW (Ta)
15mOhm @ 5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
DMN3020UTS-13
Diodes Incorporated

MOSFET N-CH 30V 15A 8TSSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1304 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 4.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSSOP
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Paket: -
Lager19.407
MOSFET (Metal Oxide)
30 V
15A (Tc)
1.8V, 4.5V
1V @ 250µA
27 nC @ 8 V
1304 pF @ 15 V
±12V
-
1.4W (Ta)
20mOhm @ 4.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP
8-TSSOP (0.173", 4.40mm Width)
DMT10H032LFDF-7
Diodes Incorporated

MOSFET BVDSS: 61V~100V U-DFN2020

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
Paket: -
Request a Quote
MOSFET (Metal Oxide)
100 V
6A (Ta)
4.5V, 10V
2.5V @ 250µA
11.9 nC @ 10 V
683 pF @ 50 V
±20V
-
1.3W (Ta)
32mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
DMP2037UFCL-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V U-DFN1616-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 806 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN1616-6 (Type K)
  • Package / Case: 6-PowerUFDFN
Paket: -
Request a Quote
MOSFET (Metal Oxide)
20 V
8A (Ta)
2.5V, 4.5V
1.5V @ 250µA
16.5 nC @ 8 V
806 pF @ 10 V
±10V
-
1.1W (Ta)
28mOhm @ 2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN1616-6 (Type K)
6-PowerUFDFN
DMTH4014LPSW-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4W (Ta), 46.9W (Tc)
  • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
Paket: -
Request a Quote
MOSFET (Metal Oxide)
40 V
43.5A (Tc)
4.5V, 10V
3V @ 250µA
11.2 nC @ 10 V
750 pF @ 20 V
±20V
-
4W (Ta), 46.9W (Tc)
14.5mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
DMTH10H4M5LPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 107A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4843 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.9mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
Paket: -
Lager7.350
MOSFET (Metal Oxide)
100 V
20A (Ta), 107A (Tc)
4.5V, 10V
2.5V @ 250µA
80 nC @ 10 V
4843 pF @ 50 V
±20V
-
4.7W (Ta), 136W (Tc)
4.9mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
DMN62D2UW-7
Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT323 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 391mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
Paket: -
Request a Quote
MOSFET (Metal Oxide)
60 V
391mA (Ta)
1.8V, 5V
1V @ 250µA
0.8 nC @ 4.5 V
41 pF @ 30 V
±20V
-
400mW (Ta)
2Ohm @ 50mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
DMT69M5LFVWQ-7
Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 40.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.74W (Ta), 20.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
Paket: -
Request a Quote
MOSFET (Metal Oxide)
60 V
14.8A (Ta), 40.6A (Tc)
4.5V, 10V
2.5V @ 250µA
28.4 nC @ 10 V
1406 pF @ 30 V
±20V
-
2.74W (Ta), 20.5W (Tc)
8.3mOhm @ 13.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
DMN3404LQ-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT23 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 720mW (Ta)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 5.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: -
Lager9.000
MOSFET (Metal Oxide)
30 V
5.8A (Ta)
3V, 10V
2V @ 250µA
16 nC @ 10 V
498 pF @ 15 V
±20V
-
720mW (Ta)
28mOhm @ 5.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMN62D2UT-7
Diodes Incorporated

2N7002 FAMILY SOT523 T&R 3K

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 334mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
Paket: -
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MOSFET (Metal Oxide)
60 V
334mA (Ta)
1.8V, 5V
1V @ 250µA
0.8 nC @ 4.5 V
41 pF @ 30 V
±20V
-
400mW (Ta)
2Ohm @ 50mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
DMP3097LQ-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT23 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 563 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: -
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MOSFET (Metal Oxide)
30 V
3.9A (Ta)
4.5V, 10V
2.1V @ 250µA
13.4 nC @ 10 V
563 pF @ 25 V
±20V
-
1W
65mOhm @ 3.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMP3097L-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT23 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 563 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: -
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MOSFET (Metal Oxide)
30 V
3.9A (Ta)
4.5V, 10V
2.1V @ 250µA
13.4 nC @ 10 V
563 pF @ 25 V
±20V
-
1W
65mOhm @ 3.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMT34M8LFDE-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V U-DFN2020-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type E)
  • Package / Case: 6-PowerUDFN
Paket: -
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MOSFET (Metal Oxide)
30 V
19A (Ta)
4.5V, 10V
2.5V @ 250µA
15.4 nC @ 10 V
1024 pF @ 15 V
±20V
-
1.1W (Ta)
4mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type E)
6-PowerUDFN
DMN2009UFDF-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V U-DFN2020-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1083 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 8.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
Paket: -
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MOSFET (Metal Oxide)
20 V
12.8A (Ta)
2.5V, 4.5V
1.4V @ 250µA
27.9 nC @ 10 V
1083 pF @ 10 V
±12V
-
1.3W (Ta)
9mOhm @ 8.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
DMPH4026SFVW-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
Paket: -
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MOSFET (Metal Oxide)
40 V
9.3A (Ta), 52A (Tc)
4.5V, 10V
1.8V @ 250µA
45.8 nC @ 10 V
2064 pF @ 20 V
±20V
-
2W (Ta)
25mOhm @ 3A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
DMN62D2UQ-7
Diodes Incorporated

2N7002 FAMILY SOT23 T&R 3K

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: -
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MOSFET (Metal Oxide)
60 V
390mA (Ta)
1.8V, 5V
1V @ 250µA
0.8 nC @ 10 V
41 pF @ 30 V
±20V
-
500mW (Ta)
2Ohm @ 50mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMT30M9LPS-13
Diodes Incorporated

MOSFET BVDSS: 25V-30V POWERDI506

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8 (Type K)
  • Package / Case: 8-PowerTDFN
Paket: -
Lager7.500
MOSFET (Metal Oxide)
30 V
100A (Tc)
4.5V, 10V
3V @ 250µA
160.5 nC @ 10 V
12121 pF @ 20 V
±20V
-
2.6W (Ta)
1mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI5060-8 (Type K)
8-PowerTDFN
DMTH48M3SFVWQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
Paket: -
Lager9.000
MOSFET (Metal Oxide)
40 V
14.6A (Ta), 52.4A (Tc)
10V
4V @ 250µA
12.1 nC @ 10 V
897 pF @ 20 V
±20V
-
2.82W (Ta), 36.6W (Tc)
8.9mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
DMN1008UFDFQ-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V U-DFN2020-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 6 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 700mW
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
Paket: -
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MOSFET (Metal Oxide)
12 V
12.2A (Ta)
2.5V, 4.5V
1V @ 250µA
23.4 nC @ 8 V
995 pF @ 6 V
±8V
-
700mW
8mOhm @ 5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
DMT12H090LFDF4-13
Diodes Incorporated

MOSFET N-CH 115V 3.4A 6DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 115 V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 251 pF @ 50 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-DFN2020-6
  • Package / Case: 6-PowerXDFN
Paket: -
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MOSFET (Metal Oxide)
115 V
3.4A (Ta)
3V, 10V
2.2V @ 250µA
6 nC @ 10 V
251 pF @ 50 V
±12V
-
900mW (Ta)
90mOhm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
X2-DFN2020-6
6-PowerXDFN
DMN3066LQ-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT23 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 810mW (Ta)
  • Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: -
Lager8.760
MOSFET (Metal Oxide)
30 V
3.6A (Ta)
2.5V, 4.5V
1.5V @ 250µA
4.1 nC @ 4.5 V
353 pF @ 10 V
±12V
-
810mW (Ta)
67mOhm @ 2.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMTH4002SCTBQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V TO263 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 77.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6W (Ta), 166.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AB (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Paket: -
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MOSFET (Metal Oxide)
40 V
192A (Tc)
10V
4V @ 250µA
77.5 nC @ 10 V
7180 pF @ 20 V
±20V
-
6W (Ta), 166.7W (Tc)
3mOhm @ 90A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263AB (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
ZXMP6A16KQTC
Diodes Incorporated

MOSFET BVDSS: 41V~60V TO252 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1021 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.11W (Ta)
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Paket: -
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MOSFET (Metal Oxide)
60 V
5.4A (Ta)
4.5V, 10V
1V @ 250µA
24.2 nC @ 10 V
1021 pF @ 30 V
±20V
-
2.11W (Ta)
85mOhm @ 2.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63