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Diodes Incorporated Produkte

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G43270025
Diodes Incorporated

CRYSTAL 32.768KHZ 12.5PF SMD

  • Type: kHz Crystal (Tuning Fork)
  • Frequency: 32.768kHz
  • Frequency Stability: -
  • Frequency Tolerance: ±20ppm
  • Load Capacitance: 12.5pF
  • ESR (Equivalent Series Resistance): 50 kOhm
  • Operating Mode: Fundamental
  • Operating Temperature: -40°C ~ 85°C
  • Ratings: -
  • Mounting Type: Surface Mount
  • Package / Case: 4-SOJ, 5.50mm pitch
  • Size / Dimension: 0.311" L x 0.150" W (7.90mm x 3.80mm)
  • Height - Seated (Max): 0.102" (2.60mm)
Paket: 4-SOJ, 5.50mm pitch
Lager4.338
ZTX968STZ
Diodes Incorporated

TRANS PNP 12V 4.5A E-LINE

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 4.5A
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 5A
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 1V
  • Power - Max: 1.58W
  • Frequency - Transition: 80MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
Paket: E-Line-3, Formed Leads
Lager2.896
DSS5320T-7
Diodes Incorporated

TRANS PNP 20V 2A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
  • Power - Max: 600mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
Paket: TO-236-3, SC-59, SOT-23-3
Lager4.368
hot BC847AW-7-F
Diodes Incorporated

TRANS NPN 45V 0.1A SC70-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
  • Power - Max: 200mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
Paket: SC-70, SOT-323
Lager108.000
1N5247B-T
Diodes Incorporated

DIODE ZENER 17V 500MW DO35

  • Voltage - Zener (Nom) (Vz): 17V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 19 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 13V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
  • Operating Temperature: -65°C ~ 200°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
Paket: DO-204AH, DO-35, Axial
Lager3.152
ZMV832BTC
Diodes Incorporated

DIODE VARACTOR 25V SOD323

  • Capacitance @ Vr, F: 23.1pF @ 2V, 1MHz
  • Capacitance Ratio: 6.5
  • Capacitance Ratio Condition: C2/C20
  • Voltage - Peak Reverse (Max): 25V
  • Diode Type: Single
  • Q @ Vr, F: 200 @ 3V, 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
Paket: SC-76, SOD-323
Lager7.232
ZDC833ATC
Diodes Incorporated

DIODE VAR CAP DUAL 33PF SOT23-3

  • Capacitance @ Vr, F: 36.3pF @ 2V, 1MHz
  • Capacitance Ratio: 6.5
  • Capacitance Ratio Condition: C2/C20
  • Voltage - Peak Reverse (Max): 25V
  • Diode Type: 1 Pair Common Cathode
  • Q @ Vr, F: 200 @ 3V, 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager7.120
hot BAS20W-7-F
Diodes Incorporated

DIODE GEN PURP 150V 200MA SOT323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 150V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: SC-70, SOT-323
Lager695.220
SBL3035PT
Diodes Incorporated

DIODE ARRAY SCHOTTKY 35V TO3P

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 35V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
Paket: TO-3P-3, SC-65-3
Lager2.048
hot AP7333-25SRG-7
Diodes Incorporated

IC REG LINEAR 2.5V 300MA SOT23R

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 6V
  • Voltage - Output (Min/Fixed): 2.5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.55V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 75µA ~ 85µA
  • PSRR: 65dB (100Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature, Short Circuit
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT23R
Paket: TO-236-3, SC-59, SOT-23-3
Lager242.400
APX803S00-31SA-7
Diodes Incorporated

RESET GENERATOR SOT23

  • Type: Simple Reset/Power-On Reset
  • Number of Voltages Monitored: 1
  • Output: Open Drain or Open Collector
  • Reset: Active Low
  • Reset Timeout: 1 ms Minimum
  • Voltage - Threshold: 3.08V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager5.056
APX803L20-19SA-7
Diodes Incorporated

RESET GENERATOR SOT23

  • Type: Simple Reset/Power-On Reset
  • Number of Voltages Monitored: 1
  • Output: Open Drain or Open Collector
  • Reset: Active Low
  • Reset Timeout: 143 ms Minimum
  • Voltage - Threshold: 1.9V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager3.600
AP3064FNTR-G1
Diodes Incorporated

IC LED DRIVER CTRLR DIM 16QFN

  • Type: DC DC Controller
  • Topology: Step-Up (Boost)
  • Internal Switch(s): No
  • Number of Outputs: 4
  • Voltage - Supply (Min): 4.5V
  • Voltage - Supply (Max): 33V
  • Voltage - Output: 60V
  • Current - Output / Channel: 220mA
  • Frequency: 100kHz ~ 1MHz
  • Dimming: PWM
  • Applications: Backlight
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-WQFN Exposed Pad
  • Supplier Device Package: 16-QFN (4x4)
Paket: 16-WQFN Exposed Pad
Lager7.584
AP9101CK6-CGTRG1
Diodes Incorporated

MULTICELL BATT MANAGER SOT26

  • Function: -
  • Battery Chemistry: -
  • Number of Cells: -
  • Fault Protection: -
  • Interface: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager6.192
hot AUR9807DIGD
Diodes Incorporated

IC BATT CHRGR LI-ION SGL 20QFN

  • Battery Chemistry: Lithium-Ion
  • Number of Cells: 1
  • Current - Charging: Constant - Programmable
  • Programmable Features: Timer
  • Fault Protection: Over Temperature, Over Voltage, Reverse Current, Short Circuit
  • Charge Current - Max: 1.5A
  • Battery Pack Voltage: 4.2V
  • Voltage - Supply (Max): 5.5V
  • Interface: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: 20-WFQFN Exposed Pad
  • Supplier Device Package: 20-QFN (4.5x3.5)
Paket: 20-WFQFN Exposed Pad
Lager58.080
PI4MSD5V9545CLEX
Diodes Incorporated

IC BUS SWITCH 4CH 20TSSOP

  • Type: Bus Switch
  • Circuit: 2 x 1:4
  • Independent Circuits: 1
  • Current - Output High, Low: -
  • Voltage Supply Source: Single Supply
  • Voltage - Supply: 1.65 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager7.520
PI3C3125WEX-2017
Diodes Incorporated

BUS SWITCH 3V SO-14

  • Type: -
  • Circuit: -
  • Independent Circuits: -
  • Current - Output High, Low: -
  • Voltage Supply Source: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager2.768
hot PAM8902AZER
Diodes Incorporated

IC AMP AUD 30VPP CLASS D 16WCSP

  • Type: Class D
  • Output Type: 1-Channel (Mono)
  • Max Output Power x Channels @ Load: -
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Features: Short-Circuit and Thermal Protection
  • Mounting Type: Surface Mount
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Supplier Device Package: 16-CSP (1.95x1.95)
  • Package / Case: 16-WFBGA, WLCSP
Paket: 16-WFBGA, WLCSP
Lager108.000
PI5A4157TAEX
Diodes Incorporated

IC SWITCH SPDT 0.8 OHM 6-SOT23

  • Switch Circuit: SPDT
  • Multiplexer/Demultiplexer Circuit: 2:1
  • Number of Circuits: 1
  • On-State Resistance (Max): 1.2 Ohm
  • Channel-to-Channel Matching (ΔRon): 10 mOhm
  • Voltage - Supply, Single (V+): 1.65 V ~ 5.5 V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 18ns, 20ns
  • -3db Bandwidth: 150MHz
  • Charge Injection: 35pC
  • Channel Capacitance (CS(off), CD(off)): 3.5pF
  • Current - Leakage (IS(off)) (Max): 20nA
  • Crosstalk: -70dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager2.256
PI6C22409-1HWE
Diodes Incorporated

IC ZERO DELY CLK BUFF 1:9 16SOIC

  • Type: -
  • PLL: Yes with Bypass
  • Input: TTL
  • Output: TTL
  • Number of Circuits: 1
  • Ratio - Input:Output: 1:9
  • Differential - Input:Output: No/No
  • Frequency - Max: 220MHz
  • Divider/Multiplier: No/No
  • Voltage - Supply: 2.375 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
Paket: 16-SOIC (0.154", 3.90mm Width)
Lager5.088
AH1902-FT4-7
Diodes Incorporated

MAGNETIC SWITCH OMNIPOLAR 6DFN

  • Function: Omnipolar Switch
  • Technology: Hall Effect
  • Polarization: Either
  • Sensing Range: ±4.8mT Trip, ±3.8mT Release
  • Test Condition: -40°C ~ 85°C
  • Voltage - Supply: 1.6 V ~ 3.6 V
  • Current - Supply (Max): 8µA
  • Current - Output (Max): 3mA
  • Output Type: Push-Pull
  • Features: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: 6-DFN (1.5x2)
Paket: 6-XFDFN Exposed Pad
Lager5.796
AH1807-P-B
Diodes Incorporated

MAGNETIC SWITCH OMNIPOLAR 3SIP

  • Function: Omnipolar Switch
  • Technology: Hall Effect
  • Polarization: Either
  • Sensing Range: ±11.5mT Trip, ±10mT Release
  • Test Condition: -40°C ~ 125°C
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Current - Supply (Max): 16µA
  • Current - Output (Max): 2.5mA
  • Output Type: Open Drain
  • Features: -
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Package / Case: 3-SIP
  • Supplier Device Package: 3-SIP
Paket: 3-SIP
Lager24.498
DMN2310UWQ-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT323 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 450mW (Ta)
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 300mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
Paket: -
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MJD44H11Q-13
Diodes Incorporated

PWR HI VOLTAGE TRANSISTOR TO252

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 8 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
  • Power - Max: 1.5 W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
Paket: -
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DCX143ZU-13R-F
Diodes Incorporated

PREBIAS TRANSISTOR SOT363 T&R 10

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paket: -
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DMN3060LWQ-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT323 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
Paket: -
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DMT4001LPS-13
Diodes Incorporated

MOSFET N-CH 40V 100A PWRDI5060-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.6W
  • Rds On (Max) @ Id, Vgs: 1mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8 (Type K)
  • Package / Case: 8-PowerTDFN
Paket: -
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DMP3056LSDQ-13
Diodes Incorporated

MOSFET 2P-CH 30V 6.9A 8SO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 722pF @ 25V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: -
Lager166.182
DMTH4002SCTBQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V TO263 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 77.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6W (Ta), 166.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AB (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Paket: -
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DMNH15H110SPS-13
Diodes Incorporated

MOSFET BVDSS: 101V~250V POWERDI5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 989 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
Paket: -
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