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Dioden - Brückengleichrichter

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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot GBPC1506W
Diodes Incorporated

RECT BRIDGE GPP 600V 15A GBPCW

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
Paket: 4-Square, GBPC-W
Lager15.600
Standard
600V
15A
1.1V @ 7.5A
5µA @ 600V
-65°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
hot MB4S-E3/45
Vishay Semiconductor Diodes Division

RECT BRIDGE .5A 400V TO-269AA

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-269AA, 4-BESOP
  • Supplier Device Package: TO-269AA (MBS)
Paket: TO-269AA, 4-BESOP
Lager360.000
Standard
400V
500mA
1V @ 400mA
5µA @ 400V
-55°C ~ 150°C (TJ)
Surface Mount
TO-269AA, 4-BESOP
TO-269AA (MBS)
112MT160KB
Vishay Semiconductor Diodes Division

RECT BRIDGE 1600V 110A MTK

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 110A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: 20mA @ 1600V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: MTK
  • Supplier Device Package: MTK
Paket: MTK
Lager4.976
Standard
1600V
110A
-
20mA @ 1600V
-40°C ~ 125°C (TJ)
Chassis Mount
MTK
MTK
LVB2560-M3/45
Vishay Semiconductor Diodes Division

RECT BRIDGE 600V 25A GSIB-5S

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 12.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GSIB-5S
  • Supplier Device Package: GSIB-5S
Paket: 4-SIP, GSIB-5S
Lager3.216
Standard
600V
25A
920mV @ 12.5A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GSIB-5S
GSIB-5S
GBPC2508W T0G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 25A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
Paket: 4-Square, GBPC-W
Lager6.064
Standard
800V
25A
1.1V @ 12.5A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
GBPC3501TA
SMC Diode Solutions

BRIDGE RECT 1PHASE 100V 35A GBPC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
Paket: 4-Square, GBPC
Lager5.456
Standard
100V
35A
1.1V @ 17.5A
5µA @ 100V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
TS20P05G D2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 20A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
Paket: 4-SIP, TS-6P
Lager7.264
Standard
600V
20A
1.1V @ 20A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
BU15065S-M3/45
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 15A 600V BU-5S

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU-5S
  • Supplier Device Package: isoCINK+? BU-5S
Paket: 4-SIP, BU-5S
Lager5.024
Standard
600V
15A
1.05V @ 6A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU-5S
isoCINK+? BU-5S
GSIB6A80-E3/45
Vishay Semiconductor Diodes Division

DIODE 6A 800V GSIB-5S

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 2.8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GSIB-5S
  • Supplier Device Package: GSIB-5S
Paket: 4-SIP, GSIB-5S
Lager5.488
Standard
800V
2.8A
1V @ 3A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GSIB-5S
GSIB-5S
GBU801 D2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 8A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
Paket: 4-SIP, GBU
Lager5.104
Standard
50V
8A
1.1V @ 8A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
3N255-M4/51
Vishay Semiconductor Diodes Division

RECT BRIDGE 1PHASE 200V 2A KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 165°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
Paket: 4-SIP, KBPM
Lager4.288
Standard
200V
2A
1.1V @ 3.14A
5µA @ 200V
-55°C ~ 165°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
CD-DF406S
Bourns Inc.

BRIDGE RECT 1PHASE 600V 4A SMD

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 0.95V @ 2A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Chip, Concave Terminals
  • Supplier Device Package: -
Paket: Chip, Concave Terminals
Lager3.680
Standard
600V
4A
0.95V @ 2A
5µA @ 600V
-55°C ~ 175°C (TJ)
Surface Mount
Chip, Concave Terminals
-
DBLS101GHRDG
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 2µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBLS
Paket: 4-SMD, Gull Wing
Lager2.816
Standard
50V
1A
1.1V @ 1A
2µA @ 50V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DBLS
KBL04-E4/51
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 4A 400V KBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBL
  • Supplier Device Package: KBL
Paket: 4-SIP, KBL
Lager26.016
Standard
400V
4A
1.1V @ 4A
5µA @ 400V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, KBL
KBL
B05S-G
Comchip Technology

RECT BRIDGE GPP 50V 0.8A MBS

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 800mA
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-269AA, 4-BESOP
  • Supplier Device Package: MBS
Paket: TO-269AA, 4-BESOP
Lager27.330
Standard
50V
800mA
1.1V @ 800mA
5µA @ 50V
-55°C ~ 150°C (TJ)
Surface Mount
TO-269AA, 4-BESOP
MBS
GBU6G-T
Diotec Semiconductor

IC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 4.2 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
Paket: -
Request a Quote
Standard
400 V
4.2 A
1 V @ 6 A
5 µA @ 400 V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
NTE5326
NTE Electronics, Inc

R-SI BRIDGE 600V 25A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square
  • Supplier Device Package: -
Paket: -
Request a Quote
Standard
600 V
25 A
1.1 V @ 12.5 A
10 µA @ 600 V
-55°C ~ 125°C (TJ)
QC Terminal
4-Square
-
MDMA210UB1600PTED
IXYS

BIPOLARMODULE-RECTIFIER+BRAKE E2

  • Diode Type: Three Phase (Braking)
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.6 kV
  • Current - Average Rectified (Io): 210 A
  • Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 210 A
  • Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E2
  • Supplier Device Package: E2
Paket: -
Request a Quote
Standard
1.6 kV
210 A
1.75 V @ 210 A
100 µA @ 1600 V
-40°C ~ 150°C (TJ)
Chassis Mount
E2
E2
VS-KBPC101
Vishay General Semiconductor - Diodes Division

BRIDGE RECTIFIER 100V 3.0A D-46

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, KBPC-1
  • Supplier Device Package: KBPC1
Paket: -
Lager543
Standard
100 V
3 A
1.1 V @ 1.5 A
10 µA @ 100 V
-40°C ~ 150°C (TJ)
Through Hole
4-Square, KBPC-1
KBPC1
GBU4JL-7088E3-51
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 3A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
Paket: -
Request a Quote
Standard
600 V
3 A
1 V @ 4 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBLA01
Taiwan Semiconductor Corporation

DIODE BRIDGE 4A 100V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
Paket: -
Request a Quote
Standard
100 V
3 A
1 V @ 4 A
5 µA @ 100 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
GBU4JL-5300E3-51
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 3A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
Paket: -
Request a Quote
Standard
600 V
3 A
1 V @ 4 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU2506-BP-HF
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
Paket: -
Request a Quote
Standard
600 V
25 A
1 V @ 12.5 A
10 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
ABS6H
Taiwan Semiconductor Corporation

BRIDGE RECT 1P 600V 800MA ABS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 800 mA
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: ABS
Paket: -
Lager15.000
Standard
600 V
800 mA
950 mV @ 400 mA
10 µA @ 600 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
ABS
B80S15A
Diotec Semiconductor

BRIDGE 1PH SO-DIL 160V 1.5A 150C

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 160 V
  • Current - Average Rectified (Io): 1.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 160 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-269AA, 4-BESOP
  • Supplier Device Package: 4-SOIC
Paket: -
Request a Quote
Standard
160 V
1.5 A
1.1 V @ 1 A
5 µA @ 160 V
-50°C ~ 150°C (TJ)
Surface Mount
TO-269AA, 4-BESOP
4-SOIC
GBJ2508-03-G
Comchip Technology

BRIDGE RECT 1PHASE 800V 25A GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
Paket: -
Request a Quote
Standard
800 V
25 A
1 V @ 12.5 A
10 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
GBJ35S06
Diodes Incorporated

MEDIUM/HIGH POWER BRIDGE GBJ TUB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 930 mV @ 17.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
Paket: -
Request a Quote
Standard
600 V
35 A
930 mV @ 17.5 A
10 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
GBU1007
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 10A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
Paket: -
Lager5.997
Standard
1 kV
10 A
1.1 V @ 1.5 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU