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Dioden - Brückengleichrichter

Aufzeichnungen 7.565
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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MSDM200-12
Microsemi Corporation

MOD BRIDGE 3PH 1200V 200A M3-1

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 200A
  • Voltage - Forward (Vf) (Max) @ If: 1.45V @ 200A
  • Current - Reverse Leakage @ Vr: 500µA @ 1200V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M3-1
  • Supplier Device Package: M3-1
Paket: M3-1
Lager7.968
Standard
1200V
200A
1.45V @ 200A
500µA @ 1200V
-40°C ~ 150°C (TJ)
Chassis Mount
M3-1
M3-1
hot GBJ1004
Diodes Incorporated

RECT BRIDGE GPP 400V 10A GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
Paket: 4-SIP, GBJ
Lager8.448
Standard
400V
10A
1.05V @ 5A
10µA @ 400V
-65°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
MB258W
Micro Commercial Co

RECT BRIDGE 25A 800V WIRE LEADS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 12.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, MB-35W
  • Supplier Device Package: MB-35W
Paket: 4-Square, MB-35W
Lager5.728
Standard
800V
25A
1.2V @ 12.5A
10µA @ 600V
-55°C ~ 125°C (TJ)
Through Hole
4-Square, MB-35W
MB-35W
hot VUO52-14NO1
IXYS

RECT BRIDGE 3PH 54A 1400V V1-A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1400V
  • Current - Average Rectified (Io): 54A
  • Voltage - Forward (Vf) (Max) @ If: 1.13V @ 20A
  • Current - Reverse Leakage @ Vr: 40µA @ 1400V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: V1-A
  • Supplier Device Package: V1-A
Paket: V1-A
Lager5.344
Standard
1400V
54A
1.13V @ 20A
40µA @ 1400V
-40°C ~ 150°C (TJ)
Chassis Mount
V1-A
V1-A
VBO30-18NO7
IXYS

DIODE BRIDGE 35A 1800V PWS-A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1800V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 150A
  • Current - Reverse Leakage @ Vr: 300µA @ 1800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-A
  • Supplier Device Package: PWS-A
Paket: PWS-A
Lager6.096
Standard
1800V
35A
2.2V @ 150A
300µA @ 1800V
-40°C ~ 150°C (TJ)
Chassis Mount
PWS-A
PWS-A
VBO13-12NO2
IXYS

BRIDGE RECT SGL PHASE 1200V 18A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 18A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 55A
  • Current - Reverse Leakage @ Vr: 300µA @ 1200V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, FO-A
  • Supplier Device Package: FO-A
Paket: 4-Square, FO-A
Lager4.640
Standard
1200V
18A
1.8V @ 55A
300µA @ 1200V
-40°C ~ 150°C (TJ)
QC Terminal
4-Square, FO-A
FO-A
VUO18-16DT8
IXYS

RECT BRIDGE 18A 1600V FO-B

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 18A
  • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 55A
  • Current - Reverse Leakage @ Vr: 300µA @ 1600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 5-Square, FO-B
  • Supplier Device Package: FO-B
Paket: 5-Square, FO-B
Lager4.400
Standard
1600V
18A
1.85V @ 55A
300µA @ 1600V
-40°C ~ 150°C (TJ)
QC Terminal
5-Square, FO-B
FO-B
APT60DF20HJ
Microsemi Corporation

MOD DIODE 200V SOT-227

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 90A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 60A
  • Current - Reverse Leakage @ Vr: 250µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
Paket: SOT-227-4, miniBLOC
Lager7.200
Standard
200V
90A
1.15V @ 60A
250µA @ 200V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
GBPC5001 T0G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 50A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC40
  • Supplier Device Package: GBPC40
Paket: 4-Square, GBPC40
Lager3.328
Standard
100V
50A
1.1V @ 25A
10µA @ 100V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC40
GBPC40
GBPC2504-G
Comchip Technology

RECTIFIER BRIDGE 25A 400V GBPC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
Paket: 4-Square, GBPC
Lager7.552
Standard
400V
25A
1.1V @ 12.5A
5µA @ 400V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
KBPC15005W-G
Comchip Technology

RECTIFIER BRIDGE 15A 50V KBPCW

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, KBPC-W
  • Supplier Device Package: KBPC-W
Paket: 4-Square, KBPC-W
Lager2.128
Standard
50V
15A
1.1V @ 7.5A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, KBPC-W
KBPC-W
TS8P06GHD2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 8A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
Paket: 4-SIP, TS-6P
Lager3.136
Standard
800V
8A
1.1V @ 8A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
KBU25005-G
Comchip Technology

RECT BRIDGE CELL 50V 25A KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 3.6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
Paket: 4-SIP, KBU
Lager2.016
Standard
50V
3.6A
1.1V @ 12.5A
10µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
CBR1-L060M
Central Semiconductor Corp

BRIDGE RECT 1PHASE 600V 1.5A B-M

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP
  • Supplier Device Package: B-M
Paket: 4-SIP
Lager4.976
Standard
600V
1.5A
1V @ 1A
10µA @ 600V
-65°C ~ 150°C (TJ)
Through Hole
4-SIP
B-M
CBR1-080
Central Semiconductor Corp

BRIDGE RECT 1P 800V 1.5A A CASE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, A Case
  • Supplier Device Package: A Case
Paket: 4-Circular, A Case
Lager4.128
Standard
800V
1.5A
1V @ 1A
10µA @ 800V
-65°C ~ 150°C (TJ)
Through Hole
4-Circular, A Case
A Case
3N249-E4/51
Vishay Semiconductor Diodes Division

DIODE BRIDGE 1.5A 400V KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
Paket: 4-SIP, KBPM
Lager6.784
Standard
400V
1.5A
1V @ 1A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
3N252-M4/51
Vishay Semiconductor Diodes Division

BRIDGE RECT 1.5A 1000V KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
Paket: 4-SIP, KBPM
Lager5.952
Standard
1000V
1.5A
1V @ 1A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
KBU6D-E4/51
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 6A 200V KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
Paket: 4-SIP, KBU
Lager3.344
Standard
200V
6A
1V @ 6A
5µA @ 200V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
GBU404G
SMC Diode Solutions

BRIDGE RECT 1PHASE 400V 4A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: GBU
Paket: -
Request a Quote
Standard
400 V
4 A
1.1 V @ 4 A
5 µA @ 400 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
GBU
DB152S
SMC Diode Solutions

BRIDGE RECT 1P 100V 1.5A DB-S

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 1.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DB-S
Paket: -
Request a Quote
Standard
100 V
1.5 A
1.1 V @ 1.5 A
5 µA @ 100 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DB-S
MSCDC100H70AG
Microchip Technology

PM-DIODE-SIC-SBD-SP6C

  • Diode Type: Single Phase
  • Technology: Silicon Carbide Schottky
  • Voltage - Peak Reverse (Max): 700 V
  • Current - Average Rectified (Io): 100 A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
  • Current - Reverse Leakage @ Vr: 400 µA @ 700 V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6
Paket: -
Lager12
Silicon Carbide Schottky
700 V
100 A
1.8 V @ 100 A
400 µA @ 700 V
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP6
NTE53003
NTE Electronics, Inc

BRIDGE-800VRM 10A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
Standard
1 kV
8 A
1.1 V @ 5 A
10 µA @ 1000 V
-
-
-
-
KBPC35005
JATTA

BRIDGE RECT 1P 600V 35.0A KBPC-3

  • Diode Type: -
  • Technology: -
  • Voltage - Peak Reverse (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
GBU6JL-5000E3-51
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 3.8A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 3.8 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
Paket: -
Request a Quote
Standard
600 V
3.8 A
1 V @ 6 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
KBP402G
SMC Diode Solutions

BRIDGE RECT 1PHASE 200V 4A KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: KBP
Paket: -
Request a Quote
Standard
200 V
4 A
1.1 V @ 4 A
5 µA @ 200 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
KBP
ABS20K
Diotec Semiconductor

IC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: ABS
Paket: -
Request a Quote
Standard
800 V
2 A
1.1 V @ 2 A
5 µA @ 800 V
-50°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
ABS
MDNA660U2200PTEH
IXYS

BIPOLARMODULE-BRIDGE RECTIFIER E

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 2.2 kV
  • Current - Average Rectified (Io): 660 A
  • Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 660 A
  • Current - Reverse Leakage @ Vr: 400 µA @ 2200 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E3
  • Supplier Device Package: E3
Paket: -
Request a Quote
Standard
2.2 kV
660 A
1.95 V @ 660 A
400 µA @ 2200 V
-40°C ~ 150°C (TJ)
Chassis Mount
E3
E3
TBSL40K-TP
Micro Commercial Co

DIODE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: TBSL
Paket: -
Request a Quote
Standard
800 V
4 A
1 V @ 4 A
5 µA @ 800 V
-55°C ~ 150°C
Surface Mount
4-SMD, Flat Leads
TBSL