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Dioden - Brückengleichrichter

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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2KBP06ML-5301E4/72
Vishay Semiconductor Diodes Division

BRIDGE RECT 1PHASE 600V 2A KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 165°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
Paket: 4-SIP, KBPM
Lager7.232
Standard
600V
2A
1.1V @ 3.14A
5µA @ 600V
-55°C ~ 165°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
KBPM206G
GeneSiC Semiconductor

DIODE BRIDGE 600V 2A KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
Paket: 4-SIP, KBPM
Lager7.440
Standard
600V
2A
1.1V @ 2A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
MSD50-16
Microsemi Corporation

DIODE BRIDGE 1600V 50A M1

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A
  • Current - Reverse Leakage @ Vr: 200µA @ 1600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: M1
  • Supplier Device Package: MSD
Paket: M1
Lager3.344
Standard
1600V
50A
1.5V @ 100A
200µA @ 1600V
-40°C ~ 150°C (TJ)
QC Terminal
M1
MSD
GBPC15005
Diodes Incorporated

RECTIFIER BRIDGE 15A 50V GBPC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
Paket: 4-Square, GBPC
Lager6.272
Standard
50V
15A
1.1V @ 7.5A
5µA @ 50V
-65°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
SET111424
Semtech Corporation

ASSY RECT 30A 600V SFAST REC

  • Diode Type: -
  • Technology: -
  • Voltage - Peak Reverse (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager2.016
-
-
-
-
-
-
-
-
-
SC3BH6
Semtech Corporation

BRIDGE RECT 4A 600V

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Current - Reverse Leakage @ Vr: 3µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Rectangle
  • Supplier Device Package: -
Paket: 4-Rectangle
Lager4.128
Standard
600V
4A
1V @ 3A
3µA @ 600V
-55°C ~ 150°C (TJ)
Chassis Mount
4-Rectangle
-
VBO160-12NO7
IXYS

DIODE BRIDGE 174A 1200V PWS-E-1

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 174A
  • Voltage - Forward (Vf) (Max) @ If: 1.07V @ 160A
  • Current - Reverse Leakage @ Vr: 200µA @ 1200V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-E
  • Supplier Device Package: PWS-E
Paket: PWS-E
Lager3.504
Standard
1200V
174A
1.07V @ 160A
200µA @ 1200V
-40°C ~ 150°C (TJ)
Chassis Mount
PWS-E
PWS-E
MSD200-16
Microsemi Corporation

DIODE BRIDGE 1600V 200A SM3

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 200A
  • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 300A
  • Current - Reverse Leakage @ Vr: 300µA @ 1600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M3
  • Supplier Device Package: M3
Paket: M3
Lager6.928
Standard
1600V
200A
1.55V @ 300A
300µA @ 1600V
-40°C ~ 150°C (TJ)
Chassis Mount
M3
M3
PB68-BP
Micro Commercial Co

RECTIFIER BRIDGE 6A 800V PB-6

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, PB-6
  • Supplier Device Package: PB-6
Paket: 4-Square, PB-6
Lager5.904
Standard
800V
6A
1.1V @ 3A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, PB-6
PB-6
hot KBU6K
GeneSiC Semiconductor

DIODE BRIDGE 800V 6A KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
Paket: 4-SIP, KBU
Lager8.952
Standard
800V
6A
1V @ 6A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
GBJ1501TB
SMC Diode Solutions

BRIDGE RECT 1PHASE 100V 15A GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: GBJ
Paket: 4-ESIP
Lager3.776
Standard
100V
15A
1.1V @ 7.5A
10µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
GBJ
GBLA005-E3/51
Vishay Semiconductor Diodes Division

DIODE GPP 1PH 4A 50V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
Paket: 4-SIP, GBL
Lager5.584
Standard
50V
3A
1.1V @ 4A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
DBL208GHC1G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 2A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Current - Reverse Leakage @ Vr: 2µA @ 1200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: DBL
Paket: 4-DIP (0.300", 7.62mm)
Lager5.072
Standard
1200V
2A
1.3V @ 2A
2µA @ 1200V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP (0.300", 7.62mm)
DBL
G2SBA60-E3/51
Vishay Semiconductor Diodes Division

DIODE GPP 1.5A 600V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 750mA
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
Paket: 4-SIP, GBL
Lager6.064
Standard
600V
1.5A
1V @ 750mA
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
BU1008-M3/45
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 800V 10A BU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU
  • Supplier Device Package: isoCINK+? BU
Paket: 4-SIP, BU
Lager5.968
Standard
800V
10A
1.05V @ 5A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+? BU
DBL107G C1G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 2µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: DBL
Paket: 4-DIP (0.300", 7.62mm)
Lager2.272
Standard
1000V
1A
1.1V @ 1.5A
2µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP (0.300", 7.62mm)
DBL
GBU8KL-5301E3-51
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 800V 3.9A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 3.9 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
Paket: -
Request a Quote
Standard
800 V
3.9 A
1 V @ 8 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
TS40P07GH
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 40A TS-6P

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 40 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
Paket: -
Lager3.591
Standard
1 kV
40 A
1.1 V @ 20 A
10 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
GBU4K-T
Diotec Semiconductor

BRIDGE 1-PH GBU 800V 4A 150C

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 2.8 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
Paket: -
Request a Quote
Standard
800 V
2.8 A
1 V @ 4 A
5 µA @ 800 V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
MB356-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, MB-35
  • Supplier Device Package: MB-35
Paket: -
Request a Quote
Standard
600 V
35 A
1.1 V @ 17.5 A
10 µA @ 600 V
-55°C ~ 125°C
QC Terminal
4-Square, MB-35
MB-35
GBUA4M-BP
Micro Commercial Co

BRIDGE RECTIFIERS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
Paket: -
Request a Quote
Standard
1 kV
4 A
1 V @ 2 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBI25M
Diotec Semiconductor

1PH BRIDGE 30X20X3.6 1000V 25A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 4.2 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBI
  • Supplier Device Package: GBI
Paket: -
Lager1.500
Standard
1 kV
4.2 A
1.1 V @ 12.5 A
5 µA @ 1000 V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, GBI
GBI
GBI20B
Diotec Semiconductor

IC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 3.6 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBI
  • Supplier Device Package: GBI
Paket: -
Request a Quote
Standard
100 V
3.6 A
1.1 V @ 10 A
5 µA @ 100 V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, GBI
GBI
GBJ35G
GeneSiC Semiconductor

400V 35A GBJ SINGLE PHASE BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
Paket: -
Request a Quote
Standard
400 V
35 A
1.1 V @ 17.5 A
10 µA @ 400 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
RDBF258-13
Diodes Incorporated

BRIDGE RECTIFIER DBF T&R 3K

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 2.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: DBF
Paket: -
Request a Quote
Standard
800 V
2.5 A
1.3 V @ 2.5 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Flat Leads
DBF
B80C3700A
Diotec Semiconductor

1PH BRIDGE 30X20X3.6 160V 3.7A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 160 V
  • Current - Average Rectified (Io): 2.7 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 160 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: 4-SIL
Paket: -
Lager1.410
Standard
160 V
2.7 A
1 V @ 3 A
5 µA @ 160 V
-50°C ~ 150°C (TJ)
Through Hole
4-ESIP
4-SIL
GBU8K-3E3-51
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 800V 3.9A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 3.9 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
Paket: -
Request a Quote
Standard
800 V
3.9 A
1 V @ 8 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
UG4KB60
SMC Diode Solutions

BRIDGE RECT 1PHASE 600V 4A D3K

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: D3K
Paket: -
Lager2.760
Standard
600 V
4 A
1.1 V @ 4 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
D3K