Page 1002 - Dioden - Gleichrichter - Einzeln | Diskrete Halbleiterprodukte

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
VS-STD250M12MPBF	Vishay Semiconductor Diodes Division	MODULE DIODE 1200V 250A MAGNAPAK Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paket: -	Lager6.064	-	-	-	-	-	-	-	-	-	-	-
GP10-4003HM3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Paket: DO-204AL, DO-41, Axial	Lager3.792	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 200V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
ISOPAC1211	Semtech Corporation	DIODE GEN PURP 150V 15A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 150V Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Lager7.568	150V	15A	1.1V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 150V	-	-	-	-	-55°C ~ 150°C
MBR3540R	GeneSiC Semiconductor	DIODE SCHOTTKY REV 40V DO4 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 680mV @ 35A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-203AA, DO-4, Stud	Lager4.416	40V	35A	680mV @ 35A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 20V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-55°C ~ 150°C
VS-10ETF06FP-M3	Vishay Semiconductor Diodes Division	DIODE RECT 600V 10A TO-220FP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 100µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220FP Operating Temperature - Junction: -40°C ~ 150°C	Paket: TO-220-2 Full Pack	Lager4.016	600V	10A	1.2V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	100µA @ 200V	-	Through Hole	TO-220-2 Full Pack	TO-220FP	-40°C ~ 150°C
MB10H100HE3_A/P	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 10A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 770mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4.5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 175°C	Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Lager4.224	100V	10A	770mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	4.5µA @ 100V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 175°C
SBRT15M50AP5-7D	Diodes Incorporated	DIODE SBR 50V 15A POWERDI5 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 540mV @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI?5 Operating Temperature - Junction: -55°C ~ 150°C	Paket: PowerDI? 5	Lager5.168	50V	15A	540mV @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	150µA @ 50V	-	Surface Mount	PowerDI? 5	PowerDI?5	-55°C ~ 150°C
BYT56B-TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 100V 3A SOD64 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C	Paket: SOD-64, Axial	Lager7.664	100V	3A	1.4V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	5µA @ 100V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
BYG22A-E3/TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 50V 2A DO214AC Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-214AC, SMA	Lager600.000	50V	2A	1.1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 50V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
UH1CHE3_A/H	Vishay Semiconductor Diodes Division	DIODE FAST REC 150V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 150V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	Paket: DO-214AC, SMA	Lager6.656	150V	1A	1.05V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 150V	17pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
MPG06GHE3_A/53	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A MPG06 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 600ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: MPG06, Axial Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C	Paket: MPG06, Axial	Lager3.040	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	600ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	MPG06, Axial	MPG06	-55°C ~ 150°C
GP02-25-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 2.5KV 250MA DO204 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2500V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 3V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 2500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Paket: DO-204AL, DO-41, Axial	Lager3.648	2500V	250mA	3V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 2500V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
1N5818 TR	Central Semiconductor Corp	DIODE SCHOTTKY 30V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	Paket: DO-204AL, DO-41, Axial	Lager5.424	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
S07G-M-08	Vishay Semiconductor Diodes Division	DIODE STD REC 400V DO219AB-M Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.15V @ 700mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-219AB	Lager348.000	400V	500mA	1.15V @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 400V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
UF1DHR1G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 200V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-204AL, DO-41, Axial	Lager2.400	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
PMEG2010EA,115	Nexperia USA Inc.	DIODE SCHOTTKY 20V 1A SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 15V Capacitance @ Vr, F: 25pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 125°C (Max)	Paket: SC-76, SOD-323	Lager2.560	20V	1A (DC)	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 15V	25pF @ 5V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	125°C (Max)
RHRG3060_F085	Fairchild/ON Semiconductor	DIODE GEN PURP 600V 30A TO247-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.1V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 250µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	Paket: TO-247-2	Lager8.964	600V	30A	2.1V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	250µA @ 600V	-	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
1N6665	Microchip Technology	DIODE GEN PURP 150V 10A TO257 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-257-3 Supplier Device Package: TO-257 Operating Temperature - Junction: 200°C	Paket: -	Request a Quote	150 V	10A	-	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	-	-	Through Hole	TO-257-3	TO-257	200°C
DSC04065D1	Diodes Incorporated	DIODE SIL CARBIDE 650V 4A TO252 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 170 µA @ 650 V Capacitance @ Vr, F: 159pF @ 100mV, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (Type WX) Operating Temperature - Junction: -55°C ~ 175°C	Paket: -	Request a Quote	650 V	4A	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	170 µA @ 650 V	159pF @ 100mV, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (Type WX)	-55°C ~ 175°C
JAN1N6642-TR	Microchip Technology	DIODE GEN PURP 75V 300MA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 500 nA @ 75 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: D, Axial Supplier Device Package: D-5D Operating Temperature - Junction: -65°C ~ 175°C	Paket: -	Request a Quote	75 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	5 ns	500 nA @ 75 V	5pF @ 0V, 1MHz	Through Hole	D, Axial	D-5D	-65°C ~ 175°C
BAS716HE3-TP	Micro Commercial Co	GENERAL PURPOSE - DIODES Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Current - Reverse Leakage @ Vr: 5 nA @ 75 V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Request a Quote	75 V	200mA	1.25 V @ 150 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	5 nA @ 75 V	4pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	-55°C ~ 150°C
SS32HE3_B-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 20V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Request a Quote	20 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 20 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
FR151GP-AP	Micro Commercial Co	DIODE GEN PURP 50V 1.5A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Request a Quote	50 V	1.5A	1.3 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 50 V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
1N3909R	Microchip Technology	FAST RECOVERY RECTIFIER Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: 15 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 150°C	Paket: -	Request a Quote	50 V	50A	1.4 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	15 µA @ 50 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 150°C
SD0603S040S0R1	KYOCERA AVX	SCHOTTKY DIODES Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 400 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206 Operating Temperature - Junction: -55°C ~ 125°C	Paket: -	Request a Quote	40 V	100mA	400 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	50 µA @ 40 V	-	Surface Mount	1206 (3216 Metric)	1206	-55°C ~ 125°C
2A01-TP	Micro Commercial Co	DIODE GEN PURP 50V 2A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Request a Quote	50 V	2A	1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 50 V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
BAS21LDYL	Nexperia USA Inc.	DIODE GP 200V 330MA 2DFN Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 330mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-XDFN Supplier Device Package: DFN1006D-2 Operating Temperature - Junction: 150°C (Max)	Paket: -	Lager50.106	200 V	330mA	1.25 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 nA @ 200 V	2pF @ 0V, 1MHz	Surface Mount, Wettable Flank	2-XDFN	DFN1006D-2	150°C (Max)
JAN1N5819UR-1-TR	Microchip Technology	DIODE SCHOTTKY 45V 1A DO213AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 45 V Capacitance @ Vr, F: 70pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB (MELF, LL41) Operating Temperature - Junction: -65°C ~ 125°C	Paket: -	Request a Quote	45 V	1A	490 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 45 V	70pF @ 5V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB (MELF, LL41)	-65°C ~ 125°C

VS-STD250M12MPBF

Vishay Semiconductor Diodes Division

MODULE DIODE 1200V 250A MAGNAPAK

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paket: -

Lager6.064

-

GP10-4003HM3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-204AL, DO-41, Axial

Lager3.792

200V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 200V

8pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

ISOPAC1211

Semtech Corporation

DIODE GEN PURP 150V 15A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

Lager7.568

150V

15A

1.1V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

10µA @ 150V

-

-55°C ~ 150°C

MBR3540R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 40V DO4

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 680mV @ 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-203AA, DO-4, Stud

Lager4.416

40V

35A

680mV @ 35A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.5mA @ 20V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-4

-55°C ~ 150°C

VS-10ETF06FP-M3

Vishay Semiconductor Diodes Division

DIODE RECT 600V 10A TO-220FP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 100µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -40°C ~ 150°C

Paket: TO-220-2 Full Pack

Lager4.016

600V

10A

1.2V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

100µA @ 200V

-

Through Hole

TO-220-2 Full Pack

TO-220FP

-40°C ~ 150°C

MB10H100HE3_A/P

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 10A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 770mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4.5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lager4.224

100V

10A

770mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

4.5µA @ 100V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 175°C

SBRT15M50AP5-7D

Diodes Incorporated

DIODE SBR 50V 15A POWERDI5

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 540mV @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI?5
Operating Temperature - Junction: -55°C ~ 150°C

Paket: PowerDI? 5

Lager5.168

50V

15A

540mV @ 15A

Standard Recovery >500ns, > 200mA (Io)

-

150µA @ 50V

-

Surface Mount

PowerDI? 5

PowerDI?5

-55°C ~ 150°C

BYT56B-TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 100V 3A SOD64

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C

Paket: SOD-64, Axial

Lager7.664

100V

3A

1.4V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

5µA @ 100V

-

Through Hole

SOD-64, Axial

SOD-64

-55°C ~ 175°C

BYG22A-E3/TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 50V 2A DO214AC

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-214AC, SMA

Lager600.000

50V

2A

1.1V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

1µA @ 50V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

UH1CHE3_A/H

Vishay Semiconductor Diodes Division

DIODE FAST REC 150V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 150V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C

Paket: DO-214AC, SMA

Lager6.656

150V

1A

1.05V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

1µA @ 150V

17pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 175°C

MPG06GHE3_A/53

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A MPG06

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C

Paket: MPG06, Axial

Lager3.040

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

600ns

5µA @ 400V

10pF @ 4V, 1MHz

Through Hole

MPG06, Axial

MPG06

-55°C ~ 150°C

GP02-25-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 2.5KV 250MA DO204

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2500V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 3V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 2500V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-204AL, DO-41, Axial

Lager3.648

2500V

250mA

3V @ 1A

Standard Recovery >500ns, > 200mA (Io)

2µs

5µA @ 2500V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

1N5818 TR

Central Semiconductor Corp

DIODE SCHOTTKY 30V 1A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

Paket: DO-204AL, DO-41, Axial

Lager5.424

30V

1A

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 30V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

S07G-M-08

Vishay Semiconductor Diodes Division

DIODE STD REC 400V DO219AB-M

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 700mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-219AB

Lager348.000

400V

500mA

1.15V @ 700mA

Fast Recovery =< 500ns, > 200mA (Io)

150ns

10µA @ 400V

9pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 150°C

UF1DHR1G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 200V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-204AL, DO-41, Axial

Lager2.400

200V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 200V

17pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

PMEG2010EA,115

Nexperia USA Inc.

DIODE SCHOTTKY 20V 1A SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 15V
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C (Max)

Paket: SC-76, SOD-323

Lager2.560

20V

1A (DC)

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 15V

25pF @ 5V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

125°C (Max)

RHRG3060_F085

Fairchild/ON Semiconductor

DIODE GEN PURP 600V 30A TO247-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45ns
Current - Reverse Leakage @ Vr: 250µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-247-2

Lager8.964

600V

30A

2.1V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

45ns

250µA @ 600V

-

Through Hole

TO-247-2

-55°C ~ 175°C

1N6665

Microchip Technology

DIODE GEN PURP 150V 10A TO257

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-257-3
Supplier Device Package: TO-257
Operating Temperature - Junction: 200°C

Paket: -

Request a Quote

150 V

10A

-

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

-

Through Hole

TO-257-3

TO-257

200°C

DSC04065D1

Diodes Incorporated

DIODE SIL CARBIDE 650V 4A TO252

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
Capacitance @ Vr, F: 159pF @ 100mV, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C

Paket: -

Request a Quote

650 V

4A

1.7 V @ 4 A

No Recovery Time > 500mA (Io)

0 ns

170 µA @ 650 V

159pF @ 100mV, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252 (Type WX)

-55°C ~ 175°C

JAN1N6642-TR

Microchip Technology

DIODE GEN PURP 75V 300MA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: D, Axial
Supplier Device Package: D-5D
Operating Temperature - Junction: -65°C ~ 175°C

Paket: -

Request a Quote

75 V

300mA

1.2 V @ 100 mA

Fast Recovery =< 500ns, > 200mA (Io)

5 ns

500 nA @ 75 V

5pF @ 0V, 1MHz

Through Hole

D, Axial

D-5D

-65°C ~ 175°C

BAS716HE3-TP

Micro Commercial Co

GENERAL PURPOSE - DIODES

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

Request a Quote

75 V

200mA

1.25 V @ 150 mA

Small Signal =< 200mA (Io), Any Speed

3 µs

5 nA @ 75 V

4pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

SOD-523

-55°C ~ 150°C

SS32HE3_B-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 20V 3A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

Request a Quote

20 V

3A

500 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 20 V

-

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

FR151GP-AP

Micro Commercial Co

DIODE GEN PURP 50V 1.5A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

Request a Quote

50 V

1.5A

1.3 V @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 50 V

20pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-55°C ~ 150°C

1N3909R

Microchip Technology

FAST RECOVERY RECTIFIER

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Current - Reverse Leakage @ Vr: 15 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 150°C

Paket: -

Request a Quote

50 V

50A

1.4 V @ 50 A

Fast Recovery =< 500ns, > 200mA (Io)

200 ns

15 µA @ 50 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 150°C

SD0603S040S0R1

KYOCERA AVX

SCHOTTKY DIODES

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 1206 (3216 Metric)
Supplier Device Package: 1206
Operating Temperature - Junction: -55°C ~ 125°C

Paket: -

Request a Quote

40 V

100mA

400 mV @ 100 mA

Small Signal =< 200mA (Io), Any Speed

-

50 µA @ 40 V

-

Surface Mount

1206 (3216 Metric)

1206

-55°C ~ 125°C

2A01-TP

Micro Commercial Co

DIODE GEN PURP 50V 2A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

Request a Quote

50 V

2A

1 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 50 V

20pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-55°C ~ 150°C

BAS21LDYL

Nexperia USA Inc.

DIODE GP 200V 330MA 2DFN

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 330mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Supplier Device Package: DFN1006D-2
Operating Temperature - Junction: 150°C (Max)

Paket: -

Lager50.106

200 V

330mA

1.25 V @ 200 mA

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

100 nA @ 200 V

2pF @ 0V, 1MHz

Surface Mount, Wettable Flank

2-XDFN

DFN1006D-2

150°C (Max)

JAN1N5819UR-1-TR

Microchip Technology

DIODE SCHOTTKY 45V 1A DO213AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C

Paket: -

Request a Quote

45 V

1A

490 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 45 V

70pF @ 5V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB (MELF, LL41)

-65°C ~ 125°C