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Dioden - Gleichrichter - Einzeln

Aufzeichnungen 52.788
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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
BAT750-13-F
Diodes Incorporated

DIODE SCHOTTKY 40V 750MA SOT23-3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 750mA
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10ns
  • Current - Reverse Leakage @ Vr: 100µA @ 30V
  • Capacitance @ Vr, F: 175pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
  • Operating Temperature - Junction: -55°C ~ 125°C
Paket: TO-236-3, SC-59, SOT-23-3
Lager4.576
40V
750mA
650mV @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
10ns
100µA @ 30V
175pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
-55°C ~ 125°C
JANTXV1N6620US
Microsemi Corporation

DIODE GEN PURP 220V 1.2A D5A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 220V
  • Current - Average Rectified (Io): 1.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 500nA @ 220V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: D-5A
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: SQ-MELF, A
Lager7.856
220V
1.2A
1.4V @ 1.2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
500nA @ 220V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 150°C
hot SF30JG-T
Diodes Incorporated

DIODE GEN PURP 600V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: DO-201AD, Axial
Lager14.400
600V
3A
1.5V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 600V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
1N457_T50R
Fairchild/ON Semiconductor

DIODE GEN PURP 70V 200MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 70V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 20mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25nA @ 60V
  • Capacitance @ Vr, F: 8pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 175°C (Max)
Paket: DO-204AH, DO-35, Axial
Lager7.008
70V
200mA
1V @ 20mA
Small Signal =< 200mA (Io), Any Speed
-
25nA @ 60V
8pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C (Max)
CRNB25-1200PT
Crydom Co.

DIODE GP 1.2KV 15.9A TO220AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 15.9A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -40°C ~ 125°C
Paket: TO-220-2
Lager4.320
1200V
15.9A
1.1V @ 25A
Standard Recovery >500ns, > 200mA (Io)
-
100µA @ 1200V
-
Through Hole
TO-220-2
TO-220AB
-40°C ~ 125°C
hot 10ETF12S
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 10A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.33V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 310ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager6.288
1200V
10A
1.33V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
310ns
100µA @ 1200V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-40°C ~ 150°C
R7220607CSOO
Powerex Inc.

DIODE MODULE 600V 700A DO200AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 700A
  • Voltage - Forward (Vf) (Max) @ If: 1.65V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5µs
  • Current - Reverse Leakage @ Vr: 50mA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: DO-200AB, B-PUK
  • Operating Temperature - Junction: -
Paket: DO-200AB, B-PUK
Lager5.824
600V
700A
1.65V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
5µs
50mA @ 600V
-
Chassis Mount
DO-200AB, B-PUK
DO-200AB, B-PUK
-
JAN1N5623US
Microsemi Corporation

DIODE GEN PURP 1KV 1A D5A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 500nA @ 1000V
  • Capacitance @ Vr, F: 15pF @ 12V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: D-5A
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: SQ-MELF, A
Lager6.224
1000V
1A
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
500nA @ 1000V
15pF @ 12V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 175°C
MS108/TR12
Microsemi Corporation

DIODE SCHOTTKY 80V 1A DO204AL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 810mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 80V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: DO-204AL, DO-41, Axial
Lager4.816
80V
1A
810mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 80V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 175°C
hot STTH1502D
STMicroelectronics

DIODE GEN PURP 200V 15A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 36ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 175°C (Max)
Paket: TO-220-2
Lager7.848
200V
15A
1.1V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
36ns
10µA @ 200V
-
Through Hole
TO-220-2
TO-220AC
175°C (Max)
AR3PG-M3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.8A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 44pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-277, 3-PowerDFN
Lager6.128
400V
1.8A (DC)
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
10µA @ 400V
44pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
BYG22BHE3_A/H
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 100V 2A SMA

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 1µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-214AC, SMA
Lager7.008
100V
2A
1.1V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 100V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RGP10DE-E3/53
Vishay Semiconductor Diodes Division

DIODE SW 1A 200V 150NS DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-204AL, DO-41, Axial
Lager2.624
200V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
SE50PAJHM3/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 5A DO-221BC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.16V @ 5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 32pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
  • Supplier Device Package: DO-221BC (SMPA)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: DO-221BC, SMA Flat Leads Exposed Pad
Lager7.824
600V
5A
1.16V @ 5A
Standard Recovery >500ns, > 200mA (Io)
2µs
10µA @ 600V
32pF @ 4V, 1MHz
Surface Mount
DO-221BC, SMA Flat Leads Exposed Pad
DO-221BC (SMPA)
-55°C ~ 175°C
1N5822 R0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 4

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 525mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 125°C
Paket: DO-201AD, Axial
Lager4.704
40V
3A
525mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
200pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
S1AHR3G
TSC America Inc.

DIODE, 1A, 50V, AEC-Q101, DO-214

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 1µA @ 50V
  • Capacitance @ Vr, F: 12pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: DO-214AC, SMA
Lager4.640
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
1µA @ 50V
12pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 175°C
PMEG060V100EPDZ
Nexperia USA Inc.

DIODE SCHOTTKY 60V 10 CFP15

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 560mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 33ns
  • Current - Reverse Leakage @ Vr: 700µA @ 60V
  • Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: CFP15
  • Operating Temperature - Junction: 175°C (Max)
Paket: 3-SMD, Flat Leads
Lager143.718
60V
10A
560mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
33ns
700µA @ 60V
1050pF @ 1V, 1MHz
Surface Mount
3-SMD, Flat Leads
CFP15
175°C (Max)
hot BAS16HLP-7
Diodes Incorporated

DIODE GEN PURP 100V 215MA 2DFN

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 215mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 500nA @ 80V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-UFDFN
  • Supplier Device Package: X1-DFN1006-2
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: 2-UFDFN
Lager88.572
100V
215mA
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
500nA @ 80V
1.5pF @ 0V, 1MHz
Surface Mount
2-UFDFN
X1-DFN1006-2
-65°C ~ 150°C
hot SBR3U40P1-7
Diodes Incorporated

DIODE SBR 40V 3A POWERDI123

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 470mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: POWERDI?123
  • Supplier Device Package: PowerDI? 123
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: POWERDI?123
Lager3.415.956
40V
3A
470mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 40V
-
Surface Mount
POWERDI?123
PowerDI? 123
-65°C ~ 150°C
EH1
EH1
Sanken Electric USA Inc.

DIODE GEN PURP 400V 600MA AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 600mA
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 600 mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 µs
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: -
Request a Quote
400 V
600mA
1.35 V @ 600 mA
Standard Recovery >500ns, > 200mA (Io)
4 µs
10 µA @ 400 V
-
Through Hole
Axial
-
-40°C ~ 150°C
IDH05SG60CXKSA2
Infineon Technologies

DIODE SIL CARB 600V 5A TO220-2-1

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 30 µA @ 600 V
  • Capacitance @ Vr, F: 110pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2-1
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
Request a Quote
600 V
5A
2.3 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
30 µA @ 600 V
110pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
PMEG045V100EIPEZ
Nexperia USA Inc.

DIODE SCHOTTKY 45V 10A CFP15B

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 22 ns
  • Current - Reverse Leakage @ Vr: 500 µA @ 45 V
  • Capacitance @ Vr, F: 700pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: CFP15B
  • Operating Temperature - Junction: 175°C
Paket: -
Lager5.175
45 V
10A
540 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
22 ns
500 µA @ 45 V
700pF @ 1V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
CFP15B
175°C
V8PM103HM3-H
Vishay

8A, 100V, SMPC TRENCH SKY RECT.

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3.9A
  • Voltage - Forward (Vf) (Max) @ If: 710 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 170 µA @ 100 V
  • Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 175°C
Paket: -
Request a Quote
100 V
3.9A
710 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
-
170 µA @ 100 V
1150pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 175°C
PMEG4002EB-QX
Nexperia USA Inc.

PMEG4002EB-Q/SOD523/SC-79

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 nA @ 25 V
  • Capacitance @ Vr, F: 20pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523
  • Operating Temperature - Junction: 150°C
Paket: -
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40 V
200mA
600 mV @ 200 mA
Small Signal =< 200mA (Io), Any Speed
-
500 nA @ 25 V
20pF @ 1V, 1MHz
Surface Mount
SC-79, SOD-523
SOD-523
150°C
VS-TH180BL12P-S2
Vishay General Semiconductor - Diodes Division

DIODE

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
RF071MM2STFTR
Rohm Semiconductor

DIODE GEN PURP 200V 700MA PMDU

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 700mA
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 700 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: PMDU
  • Operating Temperature - Junction: 150°C (Max)
Paket: -
Lager8.073
200 V
700mA
850 mV @ 700 mA
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
10 µA @ 200 V
-
Surface Mount
SOD-123F
PMDU
150°C (Max)
SGL1-40
Diotec Semiconductor

DIODE SCHOTTKY 40V 1A DO213AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA
  • Supplier Device Package: DO-213AA, MINI-MELF
  • Operating Temperature - Junction: -50°C ~ 150°C
Paket: -
Lager10.530
40 V
1A
500 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 40 V
-
Surface Mount
DO-213AA
DO-213AA, MINI-MELF
-50°C ~ 150°C
JANS1N5802US
Microchip Technology

DIODE GEN PURP 50V 1A A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: 25pF @ 10V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: A, Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: -
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50 V
1A
975 mV @ 2.5 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
-
25pF @ 10V, 1MHz
Through Hole
A, Axial
A, Axial
-65°C ~ 175°C