Dioden - Gleichrichter - Einzeln

1N4247GP-M3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1µA @ 600V
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 160°C

Paket: DO-204AL, DO-41, Axial

BAT30LFILM

STMicroelectronics

DIODE SCHOTTKY 30V 300MA SOD923

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 300mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 530mV @ 300mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 30V
• Capacitance @ Vr, F: 22pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-923
• Supplier Device Package: SOD-923
• Operating Temperature - Junction: 150°C (Max)

Paket: SOD-923

SS24-E3/51T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 2A DO214AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 400µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -65°C ~ 125°C

Paket: DO-214AA, SMB

R5030413LSWA

Powerex Inc.

DIODE GEN PURP 400V 125A DO205AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 125A
• Voltage - Forward (Vf) (Max) @ If: 2.5V @ 470A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 700ns
• Current - Reverse Leakage @ Vr: 45mA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AA, DO-8, Stud
• Supplier Device Package: DO-205AA (DO-8)
• Operating Temperature - Junction: -40°C ~ 150°C

Paket: DO-205AA, DO-8, Stud

VS-12FLR10S02

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 12A DO203AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 12A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 200ns
• Current - Reverse Leakage @ Vr: 50µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-203AA
• Operating Temperature - Junction: -65°C ~ 150°C

Paket: DO-203AA, DO-4, Stud

MBRF1090-E3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 10A ITO220AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 90V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 90V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -65°C ~ 150°C

Paket: TO-220-2 Full Pack, Isolated Tab

V20150SG-E3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 150V 20A TO220AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 150V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: TO-220-3

ES3A-M3/57T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 3A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: 45pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-214AB, SMC

RSFKL RUG

TSC America Inc.

DIODE, FAST, 0.5A, 800V, 500NS,

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500ns
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Capacitance @ Vr, F: 4pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-219AB

CMR5H-06 TR13

Central Semiconductor Corp

DIODE HYPERFAST 600V 5A SMC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 22ns
• Current - Reverse Leakage @ Vr: 1µA @ 600V
• Capacitance @ Vr, F: 17pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-214AB, SMC

GF1M

Fairchild/ON Semiconductor

DIODE GEN PURP 1KV 1A SMA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA (DO-214AC)
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-214AC, SMA

BYM10-1000-E3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO213AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 1000V
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF (Glass)
• Supplier Device Package: DO-213AB
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-213AB, MELF (Glass)

1N4001GP-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-204AL, DO-41, Axial

SDT2U60CP3-7

Diodes Incorporated

SCHOTTKY RECTIFIER X3-DSN1406-2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 60 V
• Capacitance @ Vr, F: 110pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-DFN
• Supplier Device Package: X3-DSN1406-2
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

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HS3J-V7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

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V30K170-M3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 170V 3.4A FLATPAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 170 V
• Current - Average Rectified (Io): 3.4A
• Voltage - Forward (Vf) (Max) @ If: 1.04 V @ 30 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150 µA @ 170 V
• Capacitance @ Vr, F: 1250pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: FlatPAK (5x6)
• Operating Temperature - Junction: -40°C ~ 165°C

Paket: -

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C6D10065A

Wolfspeed, Inc.

DIODE SIL CARB 650V 37A TO220-2

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 37A
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 50 µA @ 650 V
• Capacitance @ Vr, F: 611pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: -

S1GLH

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A SUB SMA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.8 µs
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 9pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: -

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PU4DCH

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 4A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 2 µA @ 200 V
• Capacitance @ Vr, F: 78pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: -

ER1C-TP

Micro Commercial Co

DIODE GP 150V 1A DO214AA HSMB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 150 V
• Capacitance @ Vr, F: 45pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA, HSMB
• Operating Temperature - Junction: -50°C ~ 150°C

Paket: -

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15MQ060N

SMC Diode Solutions

DIODE SCHOTTKY 60V 2.1A SMA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 2.1A
• Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1.5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 mA @ 60 V
• Capacitance @ Vr, F: 250pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA (DO-214AC)
• Operating Temperature - Junction: -55°C ~ 125°C

Paket: -

S3D30065H

SMC Diode Solutions

DIODE SIL CARB 650V 84A TO247AC

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 84A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 140 µA @ 650 V
• Capacitance @ Vr, F: 2307pF @ 0V, 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247AC
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: -

V10PWM12-M3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 120V 10A SLIMDPAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 120 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 400 µA @ 120 V
• Capacitance @ Vr, F: 1130pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: SlimDPAK
• Operating Temperature - Junction: -40°C ~ 175°C

Paket: -

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SF3004PT

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 30A TO247AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Capacitance @ Vr, F: 175pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (TO-3P)
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

CPW2-1200-S005B-FR1

Wolfspeed, Inc.

DIODE SCHOTTKY 1200V 5A

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paket: -

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JANS1N5553US-TR

Microchip Technology

STD RECTIFIER

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2 µs
• Current - Reverse Leakage @ Vr: 1 µA @ 800 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, B
• Supplier Device Package: B, SQ-MELF
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: -

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M0790YC200

IXYS

DIODE GEN PURP 2KV 790A W2

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2000 V
• Current - Average Rectified (Io): 790A
• Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 635 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4 µs
• Current - Reverse Leakage @ Vr: 30 mA @ 2000 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AB, A-PUK
• Supplier Device Package: W2
• Operating Temperature - Junction: -40°C ~ 150°C

Paket: -

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SBA0820AS-AU_R1_000A1

Panjit International Inc.

DIODE SCHOTTKY 20V 800MA SOD123

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20 V
• Current - Average Rectified (Io): 800mA
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 800 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 20 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

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