Page 119 - Dioden - Gleichrichter - Einzeln | Diskrete Halbleiterprodukte

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JANTXV1N6643US	Microsemi Corporation	DIODE GEN PURP 75V 300MA D-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, D Supplier Device Package: D-5D Operating Temperature - Junction: -65°C ~ 175°C	Paket: SQ-MELF, D	Lager3.472	75V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	500nA @ 75V	5pF @ 0V, 1MHz	Surface Mount	SQ-MELF, D	D-5D	-65°C ~ 175°C
EGP10BE-M3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 22pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	Paket: DO-204AL, DO-41, Axial	Lager2.240	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	22pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
CDBA120L-G	Comchip Technology	DIODE SCHOTTKY 20V 1A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 380mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: 125°C (Max)	Paket: DO-214AC, SMA	Lager2.640	20V	1A	380mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	125°C (Max)
MBRB750-E3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 7.5A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 750mV @ 7.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Lager5.872	50V	7.5A	750mV @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
JAN1N5802URS	Microsemi Corporation	DIODE GEN PURP 50V 1A APKG Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 50V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	Paket: SQ-MELF, A	Lager2.064	50V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 50V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
MBR1690 C0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 16A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 850mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 90V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Paket: TO-220-2	Lager6.912	90V	16A	850mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 90V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
AR4PKHM3_A/I	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 800V 1.8A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.8A Voltage - Forward (Vf) (Max) @ If: 1.9V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120ns Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 55pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	Paket: TO-277, 3-PowerDFN	Lager7.680	800V	1.8A	1.9V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	10µA @ 800V	55pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SFS1604G MNG	TSC America Inc.	DIODE, SUPER FAST, 16A, 200V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Lager4.816	200V	16A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	80pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
BY228-15TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 1.2KV 3A SOD64 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20µs Current - Reverse Leakage @ Vr: 5µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: 140°C (Max)	Paket: SOD-64, Axial	Lager3.472	1200V	3A	1.5V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20µs	5µA @ 1200V	-	Through Hole	SOD-64, Axial	SOD-64	140°C (Max)
SBR8B60P5-7	Diodes Incorporated	DIODE SBR 60V 5A POWERDI5 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 600mV @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 220µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI?5 Operating Temperature - Junction: -55°C ~ 150°C	Paket: PowerDI? 5	Lager4.048	60V	5A	600mV @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	220µA @ 60V	-	Surface Mount	PowerDI? 5	PowerDI?5	-55°C ~ 150°C
6A05GHB0G	TSC America Inc.	DIODE, 6A, 50V, AEC-Q101, R-6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	Paket: R6, Axial	Lager3.088	50V	6A	1.1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
UH2D-E3/5BT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 2µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	Paket: DO-214AA, SMB	Lager4.128	200V	2A	1.05V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	2µA @ 200V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
MUR190 B0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 900V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 900V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 900V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 175°C	Paket: DO-204AC, DO-15, Axial	Lager4.240	900V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 900V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 175°C
SE20AFBHM3/6B	Vishay Semiconductor Diodes Division	DIODE ESD 1.3A 100V DO-221AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1.3A (DC) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -55°C ~ 175°C	Paket: DO-221AC, SMA Flat Leads	Lager3.280	100V	1.3A (DC)	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.2µs	5µA @ 100V	12pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-55°C ~ 175°C
VS-EPH3006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO-247 L Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.65V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 26ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	Paket: TO-247-2	Lager3.376	600V	30A	2.65V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	26ns	30µA @ 600V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
S15MLWHRVG	TSC America Inc.	DIODE, 1.5A, 1000V, AEC-Q101, SO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 1000V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD123W Operating Temperature - Junction: -55°C ~ 175°C	Paket: SOD-123W	Lager3.360	1000V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
RB068M-40TR	Rohm Semiconductor	DIODE SCHOTTKY 40V 2A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 725mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 550nA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	Paket: SOD-123F	Lager39.000	40V	2A	725mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	550nA @ 40V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)
UF4002 TR	Central Semiconductor Corp	DIODE GEN PURP 100V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	Paket: DO-204AL, DO-41, Axial	Lager3.184	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
1N4934G	ON Semiconductor	DIODE GEN PURP 100V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	Paket: DO-204AL, DO-41, Axial	Lager54.540	100V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
SM4005PL-TP	Micro Commercial Co	DIODE GEN PURP 600V 1A SOD123FL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 175°C	Paket: SOD-123F	Lager150.000	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-65°C ~ 175°C
V12PM10-M3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 100V 12A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	Paket: -	Lager17.781	100 V	12A	750 mV @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 100 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
1N6823	Microchip Technology	DIODE SCHOTT 100V 150A THINKEY3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 150 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 mA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™3 Supplier Device Package: ThinKey™3 Operating Temperature - Junction: -65°C ~ 150°C	Paket: -	Request a Quote	100 V	150A	920 mV @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 100 V	-	Surface Mount	ThinKey™3	ThinKey™3	-65°C ~ 150°C
CR2-160-BK	Central Semiconductor Corp	DIODE GEN PURP 1.6KV 2A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 175°C	Paket: -	Request a Quote	1600 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1600 V	-	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 175°C
JAN1N5196UR-TR	Microchip Technology	SIGNAL OR COMPUTER DIODE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 225 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 250 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C	Paket: -	Request a Quote	225 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	1 µA @ 250 V	-	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
GE1104	Harris Corporation	DIODE GEN PURP 200V 2.5A DO204 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 2 µA @ 200 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204, Axial Supplier Device Package: DO-204 Operating Temperature - Junction: -65°C ~ 175°C	Paket: -	Request a Quote	200 V	2.5A	950 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	2 µA @ 200 V	45pF @ 4V, 1MHz	Through Hole	DO-204, Axial	DO-204	-65°C ~ 175°C
RS3000-TP	Micro Commercial Co	DIODE GEN PURP 3KV 200MA DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 3000 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 4 V @ 500 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 3000 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Request a Quote	3000 V	200mA	4 V @ 500 mA	Small Signal =< 200mA (Io), Any Speed	-	5 µA @ 3000 V	30pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
C3D10065E-TR	Wolfspeed, Inc.	DIODE SIL CARB 650V 32A TO252-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 32A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 60 µA @ 650 V Capacitance @ Vr, F: 460.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	Paket: -	Lager7.500	650 V	32A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	460.5pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252-2	-55°C ~ 175°C
JANTX1N6942UTK3AS-TR	Microchip Technology	DIODE SCHOTTKY 45V 150A THINKEY3 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 460 mV @ 50 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 mA @ 45 V Capacitance @ Vr, F: 7000pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: ThinKey™3 Supplier Device Package: ThinKey™3 Operating Temperature - Junction: -65°C ~ 150°C	Paket: -	Request a Quote	45 V	150A	460 mV @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 45 V	7000pF @ 5V, 1MHz	Surface Mount	ThinKey™3	ThinKey™3	-65°C ~ 150°C

JANTXV1N6643US

Microsemi Corporation

DIODE GEN PURP 75V 300MA D-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 500nA @ 75V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, D
Supplier Device Package: D-5D
Operating Temperature - Junction: -65°C ~ 175°C

Paket: SQ-MELF, D

Lager3.472

75V

300mA

1.2V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

20ns

500nA @ 75V

5pF @ 0V, 1MHz

Surface Mount

SQ-MELF, D

D-5D

-65°C ~ 175°C

EGP10BE-M3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C

Paket: DO-204AL, DO-41, Axial

Lager2.240

100V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 100V

22pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 150°C

CDBA120L-G

Comchip Technology

DIODE SCHOTTKY 20V 1A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 380mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 125°C (Max)

Paket: DO-214AC, SMA

Lager2.640

20V

1A

380mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 20V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

125°C (Max)

MBRB750-E3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 7.5A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 7.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lager5.872

50V

7.5A

750mV @ 7.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 150°C

JAN1N5802URS

Microsemi Corporation

DIODE GEN PURP 50V 1A APKG

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 50V
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C

Paket: SQ-MELF, A

Lager2.064

50V

1A

875mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

1µA @ 50V

25pF @ 10V, 1MHz

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 175°C

MBR1690 C0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 16A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

Paket: TO-220-2

Lager6.912

90V

16A

850mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

-

300µA @ 90V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

AR4PKHM3_A/I

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 1.8A TO277A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1.8A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120ns
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-277, 3-PowerDFN

Lager7.680

800V

1.8A

1.9V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

120ns

10µA @ 800V

55pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

SFS1604G MNG

TSC America Inc.

DIODE, SUPER FAST, 16A, 200V, 35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lager4.816

200V

16A

975mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 200V

80pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 150°C

BY228-15TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1.2KV 3A SOD64

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20µs
Current - Reverse Leakage @ Vr: 5µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)

Paket: SOD-64, Axial

Lager3.472

1200V

3A

1.5V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

20µs

5µA @ 1200V

-

Through Hole

SOD-64, Axial

SOD-64

140°C (Max)

SBR8B60P5-7

Diodes Incorporated

DIODE SBR 60V 5A POWERDI5

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 220µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI?5
Operating Temperature - Junction: -55°C ~ 150°C

Paket: PowerDI? 5

Lager4.048

60V

5A

600mV @ 8A

Standard Recovery >500ns, > 200mA (Io)

-

220µA @ 60V

-

Surface Mount

PowerDI? 5

PowerDI?5

-55°C ~ 150°C

6A05GHB0G

TSC America Inc.

DIODE, 6A, 50V, AEC-Q101, R-6

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C

Paket: R6, Axial

Lager3.088

50V

6A

1.1V @ 6A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 50V

60pF @ 4V, 1MHz

Through Hole

R6, Axial

R-6

-55°C ~ 150°C

UH2D-E3/5BT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 2µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C

Paket: DO-214AA, SMB

Lager4.128

200V

2A

1.05V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

2µA @ 200V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 175°C

MUR190 B0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 900V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 900V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 900V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 175°C

Paket: DO-204AC, DO-15, Axial

Lager4.240

900V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 900V

15pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 175°C

SE20AFBHM3/6B

Vishay Semiconductor Diodes Division

DIODE ESD 1.3A 100V DO-221AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.3A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2µs
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C

Paket: DO-221AC, SMA Flat Leads

Lager3.280

100V

1.3A (DC)

1.1V @ 2A

Standard Recovery >500ns, > 200mA (Io)

1.2µs

5µA @ 100V

12pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SlimSMA)

-55°C ~ 175°C

VS-EPH3006LHN3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 30A TO-247 L

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.65V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-247-2

Lager3.376

600V

30A

2.65V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

26ns

30µA @ 600V

-

Through Hole

TO-247-2

TO-247AD

-55°C ~ 175°C

S15MLWHRVG

TSC America Inc.

DIODE, 1.5A, 1000V, AEC-Q101, SO

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD123W
Operating Temperature - Junction: -55°C ~ 175°C

Paket: SOD-123W

Lager3.360

1000V

1.5A

1.1V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

-

1µA @ 1000V

10pF @ 4V, 1MHz

Surface Mount

SOD-123W

SOD123W

-55°C ~ 175°C

RB068M-40TR

Rohm Semiconductor

DIODE SCHOTTKY 40V 2A PMDU

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 725mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 550nA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)

Paket: SOD-123F

Lager39.000

40V

2A

725mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

550nA @ 40V

-

Surface Mount

SOD-123F

PMDU

150°C (Max)

UF4002 TR

Central Semiconductor Corp

DIODE GEN PURP 100V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

Paket: DO-204AL, DO-41, Axial

Lager3.184

100V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 100V

20pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

1N4934G

ON Semiconductor

DIODE GEN PURP 100V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

Paket: DO-204AL, DO-41, Axial

Lager54.540

100V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

5µA @ 100V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

SM4005PL-TP

Micro Commercial Co

DIODE GEN PURP 600V 1A SOD123FL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C

Paket: SOD-123F

Lager150.000

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 600V

15pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-65°C ~ 175°C

V12PM10-M3-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 12A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

Paket: -

Lager17.781

100 V

12A

750 mV @ 12 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 100 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

1N6823

Microchip Technology

DIODE SCHOTT 100V 150A THINKEY3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 150 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 mA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: ThinKey™3
Supplier Device Package: ThinKey™3
Operating Temperature - Junction: -65°C ~ 150°C

Paket: -

Request a Quote

100 V

150A

920 mV @ 150 A

Fast Recovery =< 500ns, > 200mA (Io)

-

5 mA @ 100 V

-

Surface Mount

ThinKey™3

-65°C ~ 150°C

CR2-160-BK

Central Semiconductor Corp

DIODE GEN PURP 1.6KV 2A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 175°C

Paket: -

Request a Quote

1600 V

2A

1.1 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 1600 V

-

Through Hole

DO-204AC, DO-15, Axial

DO-15

-65°C ~ 175°C

JAN1N5196UR-TR

Microchip Technology

SIGNAL OR COMPUTER DIODE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 225 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 250 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C

Paket: -

Request a Quote

225 V

200mA

1 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

-

1 µA @ 250 V

-

Surface Mount

DO-213AA

-65°C ~ 175°C

GE1104

Harris Corporation

DIODE GEN PURP 200V 2.5A DO204

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2.5A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204, Axial
Supplier Device Package: DO-204
Operating Temperature - Junction: -65°C ~ 175°C

Paket: -

Request a Quote

200 V

2.5A

950 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

2 µA @ 200 V

45pF @ 4V, 1MHz

Through Hole

DO-204, Axial

DO-204

-65°C ~ 175°C

RS3000-TP

Micro Commercial Co

DIODE GEN PURP 3KV 200MA DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 3000 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 4 V @ 500 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 3000 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

Request a Quote

3000 V

200mA

4 V @ 500 mA

Small Signal =< 200mA (Io), Any Speed

-

5 µA @ 3000 V

30pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

C3D10065E-TR

Wolfspeed, Inc.

DIODE SIL CARB 650V 32A TO252-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 32A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Capacitance @ Vr, F: 460.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

Paket: -

Lager7.500

650 V

32A

1.8 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

60 µA @ 650 V

460.5pF @ 0V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252-2

-55°C ~ 175°C

JANTX1N6942UTK3AS-TR

Microchip Technology

DIODE SCHOTTKY 45V 150A THINKEY3

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 50 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Capacitance @ Vr, F: 7000pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: ThinKey™3
Supplier Device Package: ThinKey™3
Operating Temperature - Junction: -65°C ~ 150°C

Paket: -

Request a Quote

45 V

150A

460 mV @ 50 A

Fast Recovery =< 500ns, > 200mA (Io)

-

5 mA @ 45 V

7000pF @ 5V, 1MHz

Surface Mount

ThinKey™3

-65°C ~ 150°C