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Dioden - Gleichrichter - Einzeln

Aufzeichnungen 52.788
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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
RL107-N-0-2-BP
Micro Commercial Co

DIODE GEN PURP 1KV 1A A-405

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: Axial, Radial Bend
  • Supplier Device Package: A-405
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: Axial, Radial Bend
Lager4.560
1000V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
15pF @ 4V, 1MHz
Through Hole
Axial, Radial Bend
A-405
-55°C ~ 150°C
VS-50SQ060GTR
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 5A AXIAL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 660mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 60V
  • Capacitance @ Vr, F: 500pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AR, Axial
  • Supplier Device Package: DO-204AR
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: DO-204AR, Axial
Lager7.776
60V
5A
660mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 60V
500pF @ 5V, 1MHz
Through Hole
DO-204AR, Axial
DO-204AR
-55°C ~ 175°C
SB030-E3/53
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY .6A 30V AXIAL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 600mA
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 600mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: MPG06, Axial
  • Supplier Device Package: MPG06
  • Operating Temperature - Junction: -65°C ~ 125°C
Paket: MPG06, Axial
Lager5.008
30V
600mA
550mV @ 600mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Through Hole
MPG06, Axial
MPG06
-65°C ~ 125°C
R6111030XXYZ
Powerex Inc.

DIODE GEN PURP 1KV 300A DO205

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 800A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 13µs
  • Current - Reverse Leakage @ Vr: 50mA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -65°C ~ 190°C
Paket: DO-205AB, DO-9, Stud
Lager2.848
1000V
300A
1.4V @ 800A
Standard Recovery >500ns, > 200mA (Io)
13µs
50mA @ 1000V
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-65°C ~ 190°C
hot 20ETF10S
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 20A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.31V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 400ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager19.644
1000V
20A
1.31V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
400ns
100µA @ 1000V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 150°C
S300JR
GeneSiC Semiconductor

DIODE GEN REV 600V 300A DO205AB

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -60°C ~ 200°C
Paket: DO-205AB, DO-9, Stud
Lager4.784
600V
300A
1.2V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 100V
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-60°C ~ 200°C
VS-20ATS08-M3
Vishay Semiconductor Diodes Division

DIODE INPUT RECT 20A TO-220AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: TO-220-3
Lager5.040
800V
20A
1.1V @ 20A
Standard Recovery >500ns, > 200mA (Io)
-
100µA @ 800V
-
Through Hole
TO-220-3
TO-220AB
-40°C ~ 150°C
V10PM12HM3_A/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 3.9A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 3.9A
  • Voltage - Forward (Vf) (Max) @ If: 830mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 120V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: TO-277, 3-PowerDFN
Lager3.200
120V
3.9A
830mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 120V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
HER303G A0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 3A, 200V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-201AD, Axial
Lager2.640
200V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
FR305G B0G
TSC America Inc.

DIODE, FAST, 3A, 600V, 250NS, DO

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-201AD, Axial
Lager3.488
600V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
B360A-M3/61T
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 3A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 720mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 60V
  • Capacitance @ Vr, F: 145pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-214AC, SMA
Lager2.432
60V
3A
720mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 60V
145pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES2JAHM2G
TSC America Inc.

DIODE, SUPER FAST, 2A, 600V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-214AC, SMA
Lager5.344
600V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
20pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
hot UH1PD-M3/84A
Vishay Semiconductor Diodes Division

DIODE 1A 200V 25NS SMD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: 16pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: DO-220AA
Lager72.000
200V
1A
1.05V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
1µA @ 200V
16pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
V4PAN50-M3/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 3A DO221BC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 430mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 600µA @ 50V
  • Capacitance @ Vr, F: 480pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
  • Supplier Device Package: DO-221BC (SMPA)
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: DO-221BC, SMA Flat Leads Exposed Pad
Lager7.536
50V
3A
430mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
600µA @ 50V
480pF @ 4V, 1MHz
Surface Mount
DO-221BC, SMA Flat Leads Exposed Pad
DO-221BC (SMPA)
-40°C ~ 150°C
CLL914 TR13
Central Semiconductor Corp

DIODE GEN PURP 75V 250MA SOD80

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 5µA @ 75V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: SOD-80
  • Operating Temperature - Junction: -65°C ~ 200°C
Paket: DO-213AC, MINI-MELF, SOD-80
Lager75.408
75V
250mA
1V @ 10mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
5µA @ 75V
4pF @ 0V, 1MHz
Surface Mount
DO-213AC, MINI-MELF, SOD-80
SOD-80
-65°C ~ 200°C
R5031210RSZT
Powerex Inc.

DIODE GP REV 1.2KV 100A TO94

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300 ns
  • Current - Reverse Leakage @ Vr: 45 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: TO-209AC, TO-94-4, Stud
  • Supplier Device Package: TO-94
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: -
Lager18
1200 V
100A
-
Fast Recovery =< 500ns, > 200mA (Io)
300 ns
45 mA @ 1200 V
-
Stud Mount
TO-209AC, TO-94-4, Stud
TO-94
-40°C ~ 150°C
S3D20065G
SMC Diode Solutions

DIODE SIC 650V 20A TO263-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 µA @ 650 V
  • Capacitance @ Vr, F: 1450pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
Lager2.349
650 V
20A
1.7 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
30 µA @ 650 V
1450pF @ 0V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-2
-55°C ~ 175°C
S2MH
Taiwan Semiconductor Corporation

DIODE GEN PURP 2A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager16.320
1000 V
2A
1.15 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
1.5 µs
1 µA @ 1000 V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES1FLH
Taiwan Semiconductor Corporation

35NS, 1A, 300V, SUPER FAST RECOV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 300 V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Request a Quote
300 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 300 V
8pF @ 4V, 1MHz
Surface Mount
SOD-123
Sub SMA
-55°C ~ 150°C
S3D08065E
SMC Diode Solutions

DIODE SIL CARBIDE 650V 23A DPAK

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 23A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 51 µA @ 650 V
  • Capacitance @ Vr, F: 661pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
Lager300
650 V
23A
1.8 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
51 µA @ 650 V
661pF @ 0V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
-55°C ~ 175°C
SF31G-BP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: -
Request a Quote
50 V
3A
950 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 50 V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
20SQ045TA
SMC Diode Solutions

PLANAR SCHOTTKY DIODE 45V 20A R-

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 45 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: R-6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager2.700
45 V
20A
550 mV @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 45 V
-
Through Hole
R-6, Axial
R-6
-55°C ~ 150°C
NSVBASH21MX2WT5G
onsemi

100V & 200V SW DIODE IN X2DFNW2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 250 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 200 V
  • Capacitance @ Vr, F: 3pF @ 0V, 1MHz
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 2-XDFN
  • Supplier Device Package: 2-X2DFNW (1x0.6)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
Request a Quote
250 V
200mA
1.25 V @ 200 mA
Small Signal =< 200mA (Io), Any Speed
50 ns
100 nA @ 200 V
3pF @ 0V, 1MHz
Surface Mount, Wettable Flank
2-XDFN
2-X2DFNW (1x0.6)
-55°C ~ 175°C
AU1FD-M3-I
Vishay

1A,200V,AVALANCHE,ULTRAFAST,SMF

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: 12.2pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
Request a Quote
200 V
1A
1.5 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
1 µA @ 200 V
12.2pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 175°C
S1GFSH
Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A SOD128

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager84.000
400 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 400 V
9pF @ 4V, 1MHz
Surface Mount
SOD-128
SOD-128
-55°C ~ 150°C
S4B-R6
Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 4A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 4 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Request a Quote
100 V
4A
1.15 V @ 4 A
Standard Recovery >500ns, > 200mA (Io)
1.5 µs
10 µA @ 100 V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
V3FM10-M3-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 3A DO219AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 85 µA @ 100 V
  • Capacitance @ Vr, F: 240pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -40°C ~ 175°C
Paket: -
Lager264
100 V
3A
830 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
85 µA @ 100 V
240pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-40°C ~ 175°C
RB511VM-40TE-17
Rohm Semiconductor

DIODE SCHOTTKY 40V 100MA UMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 410 mV @ 10 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: UMD2
  • Operating Temperature - Junction: 125°C (Max)
Paket: -
Lager27.642
40 V
100mA
410 mV @ 10 mA
Small Signal =< 200mA (Io), Any Speed
-
25 µA @ 40 V
-
Surface Mount
SC-90, SOD-323F
UMD2
125°C (Max)