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Dioden - Gleichrichter - Einzeln

Aufzeichnungen 52.788
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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
GP10YE-M3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO204AL

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paket: -
Lager3.296
-
-
-
-
-
-
-
-
-
-
-
MBRH24035
GeneSiC Semiconductor

DIODE SCHOTTKY 35V 240A D67

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 240A
  • Voltage - Forward (Vf) (Max) @ If: 720mV @ 240A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 35V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: D-67
Lager3.232
35V
240A
720mV @ 240A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 35V
-
Chassis Mount
D-67
D-67
-55°C ~ 150°C
JAN1N3647
Microsemi Corporation

DIODE GEN PURP 3KV 250MA AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3000V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 5V @ 250mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 1500V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: S, Axial
  • Supplier Device Package: S, Axial
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: S, Axial
Lager2.720
3000V
250mA
5V @ 250mA
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1500V
-
Through Hole
S, Axial
S, Axial
-65°C ~ 150°C
hot SE40PDHM3/86A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2.4A TO277A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.2µs
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 28pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-277, 3-PowerDFN
Lager72.000
200V
2.4A (DC)
1.05V @ 2A
Standard Recovery >500ns, > 200mA (Io)
2.2µs
10µA @ 200V
28pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
RGP10AHM3/54
Vishay Semiconductor Diodes Division

DIODE SW 1A 50V 150NS DO-204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-204AL, DO-41, Axial
Lager5.552
50V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
SBLB10L30-E3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 10A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 520mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager2.704
30V
10A
520mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-65°C ~ 150°C
hot 10BQ060TR
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 1A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 60V
  • Capacitance @ Vr, F: 62pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-214AA, SMB
Lager420.000
60V
1A
600mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 60V
62pF @ 5V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-55°C ~ 150°C
VS-303UA250
Vishay Semiconductor Diodes Division

DIODE STD REC 300A DO-9

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2500V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.46V @ 942A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -40°C ~ 180°C
Paket: DO-205AB, DO-9, Stud
Lager6.624
2500V
300A
1.46V @ 942A
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-40°C ~ 180°C
NSB8BTHE3_A/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: 55pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager5.920
100V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 100V
55pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
hot FES8CT-E3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: TO-220-2
Lager24.000
150V
8A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
RU 3AM
Sanken

DIODE GEN PURP 600V 1.5A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 400ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: Axial
Lager5.472
600V
1.5A
1.1V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
400ns
10µA @ 600V
-
Through Hole
Axial
-
-40°C ~ 150°C
NRVB440MFSWFT1G
ON Semiconductor

DIODE SCHOTTKY 40V 4A 5DFN

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN, 5 Leads
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: 8-PowerTDFN, 5 Leads
Lager3.568
40V
4A
650mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 40V
-
Surface Mount
8-PowerTDFN, 5 Leads
5-DFN (5x6) (8-SOFL)
-55°C ~ 175°C
AR1PMHM3/85A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1000V 1A DO220AA

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 120ns
  • Current - Reverse Leakage @ Vr: 1µA @ 1000V
  • Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: DO-220AA
Lager7.936
1000V
1A
1.6V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
120ns
1µA @ 1000V
8.5pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
SE50PAB-M3/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 5A DO-221BC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.16V @ 5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: 32pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
  • Supplier Device Package: DO-221BC (SMPA)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: DO-221BC, SMA Flat Leads Exposed Pad
Lager5.360
100V
5A
1.16V @ 5A
Standard Recovery >500ns, > 200mA (Io)
2µs
10µA @ 100V
32pF @ 4V, 1MHz
Surface Mount
DO-221BC, SMA Flat Leads Exposed Pad
DO-221BC (SMPA)
-55°C ~ 175°C
UF4003HB0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 200V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-204AL, DO-41, Axial
Lager7.568
200V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4002 R0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 100V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-204AL, DO-41, Axial
Lager5.680
100V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4151W-HE3-18
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 150MA SOD123

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 50nA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: SOD-123
Lager6.528
50V
150mA
1V @ 50mA
Small Signal =< 200mA (Io), Any Speed
4ns
50nA @ 50V
-
Surface Mount
SOD-123
SOD-123
-55°C ~ 150°C
VS-MBR745-N3
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 7.5A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 7.5A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 45V
  • Capacitance @ Vr, F: 400pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: TO-220-2
Lager16.956
45V
7.5A
840mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 45V
400pF @ 5V, 1MHz
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
AU02AV1
Sanken

DIODE GEN PURP 600V 800MA AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 400ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: Axial
Lager6.208
600V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
400ns
10µA @ 600V
-
Through Hole
Axial
Axial
-40°C ~ 150°C
ACDBA260LR-HF
Comchip Technology

DIODE SCHOTTKY 60V 2A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: 150pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -50°C ~ 150°C
Paket: DO-214AC, SMA
Lager5.600
60V
2A
550mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
150pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-50°C ~ 150°C
BAT54_D87Z
Fairchild/ON Semiconductor

DIODE SCHOTTKY 30V 200MA SOT23-3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 25V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: TO-236-3, SC-59, SOT-23-3
Lager3.440
30V
200mA
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
-55°C ~ 150°C
GP2D005A120C
Global Power Technologies Group

DIODE SCHOTTKY 1.2KV 5A DPAK-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 10µA @ 1200V
  • Capacitance @ Vr, F: 317pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-2L (DPAK)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager10.476
1200V
5A
1.8V @ 5A
No Recovery Time > 500mA (Io)
0ns
10µA @ 1200V
317pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252-2L (DPAK)
-55°C ~ 175°C
hot 1N4148-TAP
Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 300MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 300mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 8ns
  • Current - Reverse Leakage @ Vr: 25nA @ 20V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: DO-204AH, DO-35, Axial
Lager120.000
75V
300mA (DC)
1V @ 10mA
Fast Recovery =< 500ns, > 200mA (Io)
8ns
25nA @ 20V
4pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 150°C
JANTXV1N5816
Microchip Technology

DIODE GEN PURP 150V 20A DO203AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 150 V
  • Capacitance @ Vr, F: 300pF @ 10V, 1MHz
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA (DO-4)
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: -
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150 V
20A
950 mV @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 150 V
300pF @ 10V, 1MHz
Stud Mount
DO-203AA, DO-4, Stud
DO-203AA (DO-4)
-65°C ~ 175°C
1N6639
Microchip Technology

DIODE GEN PURP 75V 300MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75 V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-204AH (DO-35)
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: -
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75 V
300mA
1.2 V @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
4 ns
-
-
Through Hole
DO-204AH, DO-35, Axial
DO-204AH (DO-35)
-65°C ~ 175°C
1N6623-TR
Microchip Technology

DIODE GEN PURP 880V 1A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 880 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 880 V
  • Capacitance @ Vr, F: 10pF @ 10V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: A, Axial
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: -
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880 V
1A
1.55 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
500 nA @ 880 V
10pF @ 10V, 1MHz
Through Hole
A, Axial
A, Axial
-65°C ~ 150°C
JANTXV1N6620US-TR
Microchip Technology

DIODE GEN PURP 220V 1.2A D-5A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 220 V
  • Current - Average Rectified (Io): 1.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 220 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: D-5A
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: -
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220 V
1.2A
1.4 V @ 1.2 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
500 nA @ 220 V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 150°C
RURP1560-F085P
onsemi

DIODE GEN PURP 600V 15A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 70 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
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600 V
15A
1.5 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
70 ns
100 µA @ 600 V
-
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C