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Dioden - Gleichrichter - Einzeln

Aufzeichnungen 52.788
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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
RGP20JHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-201AA, DO-27, Axial
Lager6.224
600V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 175°C
JANTXV1N4942
Microsemi Corporation

DIODE GEN PURP 200V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: 45pF @ 12V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: A, Axial
Lager7.648
200V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 200V
45pF @ 12V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 175°C
SFF1004GAHC0G
TSC America Inc.

DIODE, SUPER FAST, 10A, 200V, 35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 70pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: TO-220-3 Full Pack, Isolated Tab
Lager6.928
200V
10A
975mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
70pF @ 4V, 1MHz
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
-55°C ~ 150°C
AU3PDHM3_A/H
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.7A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.7A
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 72pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-277, 3-PowerDFN
Lager3.120
200V
1.7A
1.9V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 200V
72pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AU2PM-M3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1KV 1.3A TO277

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1.3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.5V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Capacitance @ Vr, F: 29pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-277, 3-PowerDFN
Lager3.232
1000V
1.3A (DC)
2.5V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 1000V
29pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
UH3B-M3/9AT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2.5A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 42pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: DO-214AB, SMC
Lager3.136
100V
2.5A
1.05V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
5µA @ 100V
42pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 175°C
ES3BHR7G
TSC America Inc.

DIODE, SUPER FAST, 3A, 100V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-214AB, SMC
Lager3.200
100V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
hot MURS340S-E3/52T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.45V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-214AB, SMC
Lager280.800
400V
3A
1.45V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 400V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-65°C ~ 175°C
S10JC M6G
TSC America Inc.

DIODE, 10A, 600V, DO-214AB (SMC)

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 600V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-214AB, SMC
Lager4.752
600V
10A
1.1V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 600V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
AU02ZV
Sanken

DIODE GEN PURP 200V 800MA AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 400ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: Axial
Lager2.736
200V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
400ns
10µA @ 200V
-
Through Hole
Axial
-
-40°C ~ 150°C
SS29LHMTG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 9

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 90V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-219AB
Lager5.360
90V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1JL RFG
TSC America Inc.

DIODE, FAST, 0.8A, 600V, 250NS,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-219AB
Lager5.456
600V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
BAT42WS-E3-08
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 200MA SOD323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 50mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 500nA @ 25V
  • Capacitance @ Vr, F: 7pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: 125°C (Max)
Paket: SC-76, SOD-323
Lager7.232
30V
200mA (DC)
650mV @ 50mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
7pF @ 1V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
125°C (Max)
SR206 A0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 6

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-204AC, DO-15, Axial
Lager6.832
60V
2A
700mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
CURMT103-HF
Comchip Technology

DIODE GEN PURP 200V 1A SOD123H

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123H
  • Supplier Device Package: SOD-123H
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: SOD-123H
Lager21.738
200V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
-
Surface Mount
SOD-123H
SOD-123H
-55°C ~ 150°C
SD560BTR
SMC Diode Solutions

DIODE GEN PURP 600V 5A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 9µA @ 600V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB (DO-214AA)
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-214AA, SMB
Lager161.040
600V
5A
1.2V @ 5A
Standard Recovery >500ns, > 200mA (Io)
-
9µA @ 600V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB (DO-214AA)
-65°C ~ 175°C
1N2256
Microchip Technology

DIODE GEN PURP 500V 22A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500 V
  • Current - Average Rectified (Io): 22A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4 (DO-203AA)
  • Operating Temperature - Junction: -65°C ~ 200°C
Paket: -
Request a Quote
500 V
22A
1.2 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 500 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4 (DO-203AA)
-65°C ~ 200°C
DTH1506D
Diodes Incorporated

FRED GPP RECTIFIER TO220AC TUBE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 45 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO220AC (Type WX)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager150
600 V
15A
2.9 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
45 µA @ 600 V
-
Through Hole
TO-220-2
TO220AC (Type WX)
-55°C ~ 150°C
SBA230AL_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 30V 2A SOD123FL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123FL
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager74.970
30 V
2A
490 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 30 V
-
Surface Mount
SOD-123F
SOD-123FL
-55°C ~ 150°C
CLLR1U-01-BK
Central Semiconductor Corp

DIODE GEN PURP 100V 1A MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: MELF
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: -
Request a Quote
100 V
1A
1 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 100 V
-
Surface Mount
DO-213AB, MELF
MELF
-65°C ~ 175°C
DMA10P1200UZ-TUB
IXYS

DIODE GEN PURP 1.2KV 10A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
  • Capacitance @ Vr, F: 1pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
Request a Quote
1200 V
10A
1.55 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 1200 V
1pF @ 400V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
DTH6007PT
Diodes Incorporated

DIODE 650V 60A TO247-2

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 60 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 650 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2 (Type HE)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
Request a Quote
650 V
60A
2.4 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
60 ns
100 µA @ 650 V
-
Through Hole
TO-247-2
TO-247-2 (Type HE)
-55°C ~ 175°C
DSR200BA60
SanRex Corporation

DIODE GEN PURP 600V 200A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 200A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300 ns
  • Current - Reverse Leakage @ Vr: 200 mA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: -
Request a Quote
600 V
200A
1.3 V @ 200 A
Fast Recovery =< 500ns, > 200mA (Io)
300 ns
200 mA @ 600 V
-
Chassis Mount
Module
-
-40°C ~ 150°C
FFSP3065B
onsemi

DIODE SIL CARB 650V 30A TO220-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 650 V
  • Capacitance @ Vr, F: 1280pF @ 1V, 100kHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
Lager2.388
650 V
30A
1.7 V @ 30 A
No Recovery Time > 500mA (Io)
0 ns
40 µA @ 650 V
1280pF @ 1V, 100kHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
JAN1N6761-1-TR
Microchip Technology

DIODE SCHOTTKY 100V 1A DO41

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 690 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 100 V
  • Capacitance @ Vr, F: 70pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO041, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: -
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100 V
1A
690 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 100 V
70pF @ 5V, 1MHz
Through Hole
DO-204AL, DO041, Axial
DO-41
-65°C ~ 150°C
SMBD1499LT3
onsemi

SS SOT23 SWCH DIO SPCL

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paket: -
Request a Quote
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ST3045SAX-C
SMC Diode Solutions

TRENCH SCHOTTKY DIODE 45V 30A R-

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: R-6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -
Paket: -
Lager3.000
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-
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-
Through Hole
R-6, Axial
R-6
-
ST5100S
SMC Diode Solutions

100V, 5A, TO-277B, ULTRA LOW VF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 120 µA @ 100 V
  • Capacitance @ Vr, F: 245pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277B
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager209.160
100 V
5A
750 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
120 µA @ 100 V
245pF @ 5V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277B
-55°C ~ 150°C