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Dioden - Gleichrichter - Einzeln

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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SB320S-E3/54
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 3A DO204AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: DO-204AC, DO-15, Axial
Lager4.320
20V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-65°C ~ 150°C
LS412260
Powerex Inc.

DIODE MODULE 2.2KV 600A POWRBLOK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200V
  • Current - Average Rectified (Io): 600A
  • Voltage - Forward (Vf) (Max) @ If: 1.19V @ 1800A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40mA @ 2200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: POW-R-BLOK? Module
  • Supplier Device Package: POW-R-BLOK? Module
  • Operating Temperature - Junction: -
Paket: POW-R-BLOK? Module
Lager5.696
2200V
600A
1.19V @ 1800A
Standard Recovery >500ns, > 200mA (Io)
-
40mA @ 2200V
-
Chassis Mount
POW-R-BLOK? Module
POW-R-BLOK? Module
-
R7011205XXUA
Powerex Inc.

DIODE GEN PURP 1.2KV 550A DO200

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 550A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15µs
  • Current - Reverse Leakage @ Vr: 50mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: DO-200AA, R62
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: DO-200AA, A-PUK
Lager4.992
1200V
550A
1.2V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
15µs
50mA @ 1200V
-
Chassis, Stud Mount
DO-200AA, A-PUK
DO-200AA, R62
-65°C ~ 150°C
1N3162
Powerex Inc.

DIODE STUD MNT 240A 100V DO-9

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paket: -
Lager3.648
-
-
-
-
-
-
-
-
-
-
-
DMA150E1600NA
IXYS

DIODE GP 1.6KV 150A SOT227B

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 150A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 1600V
  • Capacitance @ Vr, F: 60pF @ 400V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: SOT-227-4, miniBLOC
Lager5.168
1600V
150A
1.15V @ 150A
Standard Recovery >500ns, > 200mA (Io)
-
200µA @ 1600V
60pF @ 400V, 1MHz
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
-40°C ~ 150°C
VS-88HFR100
Vishay Semiconductor Diodes Division

DIODE GENERAL PURPOSE 85A DO-5

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 85A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB (DO-5)
  • Operating Temperature - Junction: -65°C ~ 180°C
Paket: DO-203AB, DO-5, Stud
Lager3.728
1000V
85A
1.2V @ 267A
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB (DO-5)
-65°C ~ 180°C
hot JANTX1N4148-1
Microsemi Corporation

DIODE GEN PURP 75V 200MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 500nA @ 75V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-204AH, DO-35, Axial
Lager189.720
75V
200mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
20ns
500nA @ 75V
4pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
VI30100SG-E3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 30A TO262AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 350µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262AA
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: TO-262-3 Long Leads, I2Pak, TO-262AA
Lager7.952
100V
30A
1V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
-
350µA @ 100V
-
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262AA
-40°C ~ 150°C
hot FMXK-1086S
Sanken

DIODE GEN PURP 600V 8A TO220F-2L

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 27ns
  • Current - Reverse Leakage @ Vr: 30µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220F-2L
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: TO-220-2 Full Pack
Lager2.000
600V
8A
1.75V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
27ns
30µA @ 600V
-
Through Hole
TO-220-2 Full Pack
TO-220F-2L
-40°C ~ 150°C
SS33-M3/57T
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 3A 30V DO-214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 125°C
Paket: DO-214AB, SMC
Lager5.984
30V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 125°C
SS2P2LHM3/85A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 2A DO220AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 20V
  • Capacitance @ Vr, F: 130pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -
Paket: DO-220AA
Lager2.100
20V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 20V
130pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-
ACGRKM4001-HF
Comchip Technology

DIODE GEN PURP 50V 1A SOD123F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123T
  • Supplier Device Package: KM/SOD-123F
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: SOD-123T
Lager4.560
50V
1A
1.1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
5µA @ 50V
15pF @ 4V, 1MHz
Surface Mount
SOD-123T
KM/SOD-123F
-55°C ~ 150°C
hot MURS160-E3/52T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-214AA, SMB
Lager1.567.752
600V
2A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
10pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-65°C ~ 175°C
hot MBRS130T3G
ON Semiconductor

DIODE SCHOTTKY 30V 1A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 125°C
Paket: DO-214AA, SMB
Lager2.304.552
30V
1A
600mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
-
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 125°C
BAS16WS-E3-08
Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 250MA SOD323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 250mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 6ns
  • Current - Reverse Leakage @ Vr: 1µA @ 75V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: 150°C (Max)
Paket: SC-76, SOD-323
Lager205.062
75V
250mA (DC)
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
6ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
150°C (Max)
SS24ALH
Taiwan Semiconductor Corporation

2A, 40V, SCHOTTKY RECTIFIER

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 570 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 40 V
  • Capacitance @ Vr, F: 124pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: Thin SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Request a Quote
40 V
2A
570 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 40 V
124pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
Thin SMA
-55°C ~ 150°C
ER1J
Diotec Semiconductor

DIODE SUPERFAST SMA 600V

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC, SMA
  • Operating Temperature - Junction: -50°C ~ 150°C
Paket: -
Request a Quote
600 V
1A
1.7 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
5 µA @ 600 V
-
Surface Mount
DO-214AC, SMA
DO-214AC, SMA
-50°C ~ 150°C
S10CMHM3-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 10A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5 µs
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Capacitance @ Vr, F: 79pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager19.227
1000 V
10A
1 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
5 µs
10 µA @ 1000 V
79pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
1SS385-LF-CT
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 10V 100MA SSM

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 10 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 µA @ 10 V
  • Capacitance @ Vr, F: 20pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
  • Operating Temperature - Junction: 125°C (Max)
Paket: -
Lager14.925
10 V
100mA
500 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
-
20 µA @ 10 V
20pF @ 0V, 1MHz
Surface Mount
SC-75, SOT-416
SSM
125°C (Max)
UGF5J
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 5A ITO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 30 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager3.000
600 V
5A
3 V @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
30 µA @ 600 V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
DSB5822-TR
Microchip Technology

DIODE SCHOTTKY 40V 3A B D-5D

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: B, D-5D
  • Operating Temperature - Junction: -65°C ~ 125°C
Paket: -
Request a Quote
40 V
3A
500 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 40 V
-
Through Hole
Axial
B, D-5D
-65°C ~ 125°C
SDT5A100P5-7D
Diodes Incorporated

DIODE SCHOTTKY 100V 5A POWERDI5

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI™ 5
  • Supplier Device Package: PowerDI™ 5
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Request a Quote
100 V
5A
660 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 100 V
-
Surface Mount
PowerDI™ 5
PowerDI™ 5
-55°C ~ 150°C
1MD2
Fairchild Semiconductor

DIODE-GENERAL PURPOSE VR-180V

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
1N3671RA
Solid State Inc.

DIODE GEN PURP REV 800V 22A DO4

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 22A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 200°C
Paket: -
Request a Quote
800 V
22A
1.2 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 800 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 200°C
CDBFN1200-HF
Comchip Technology

DIODE SCHOTTKY 200V 1A SOD323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Request a Quote
200 V
1A
900 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
10 µA @ 200 V
25pF @ 4V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
-55°C ~ 150°C
CDLL5818E3-TR
Microchip Technology

DIODE SCHOTTKY 30V 1A DO213AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 30 V
  • Capacitance @ Vr, F: 0.9pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB (MELF, LL41)
  • Operating Temperature - Junction: -
Paket: -
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30 V
1A
600 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 30 V
0.9pF @ 5V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB (MELF, LL41)
-
BAV20WQ-7-F
Diodes Incorporated

DIODE GEN PURP 150V 400MA SOD123

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 400mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 150 V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager9.000
150 V
400mA
1.25 V @ 200 mA
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
100 nA @ 150 V
5pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
-55°C ~ 150°C
NSR07540SLT1G
onsemi

DIODE SCHOTTKY 40V 1.5A SOT23-3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 535 mV @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 40 V
  • Capacitance @ Vr, F: 170pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Operating Temperature - Junction: -55°C ~ 125°C
Paket: -
Lager30.573
40 V
1.5A
535 mV @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 40 V
170pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
-55°C ~ 125°C