Page 1833 - Dioden - Gleichrichter - Einzeln | Diskrete Halbleiterprodukte

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CFRMT102-HF	Comchip Technology	DIODE GEN PURP 100V 1A SOD123H Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123H Operating Temperature - Junction: -55°C ~ 150°C	Paket: SOD-123H	Lager3.136	100V	1A (DC)	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	15pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123H	-55°C ~ 150°C
STTH3L06B	STMicroelectronics	DIODE GEN PURP 600V 3A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85ns Current - Reverse Leakage @ Vr: 3µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Operating Temperature - Junction: 175°C (Max)	Paket: TO-252-3, DPak (2 Leads + Tab), SC-63	Lager2.240	600V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	85ns	3µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	175°C (Max)
VS-50SQ060TR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 5A DO204AR Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 660mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 550µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AR, Axial Supplier Device Package: DO-204AR Operating Temperature - Junction: -55°C ~ 175°C	Paket: DO-204AR, Axial	Lager5.376	60V	5A	660mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	550µA @ 60V	-	Through Hole	DO-204AR, Axial	DO-204AR	-55°C ~ 175°C
HFA140NH60	Vishay Semiconductor Diodes Division	DIODE MODULE 600V 140A HALF-PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 140A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 140A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 40µA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	Paket: D-67 HALF-PAK	Lager5.728	600V	140A	1.6V @ 140A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	40µA @ 600V	-	Chassis Mount	D-67 HALF-PAK	HALF-PAK	-
D850N34T	Infineon Technologies Industrial Power and Controls Americas	DIODE RECITIFER 2800V 1900A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paket: -	Lager2.384	-	-	-	-	-	-	-	-	-	-	-
VS-SD300C28C	Vishay Semiconductor Diodes Division	DIODE MODULE 2.8KV 540A D200AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2800V Current - Average Rectified (Io): 540A Voltage - Forward (Vf) (Max) @ If: 2.08V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15mA @ 2800V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, PUK Operating Temperature - Junction: -	Paket: DO-200AA, A-PUK	Lager6.352	2800V	540A	2.08V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 2800V	-	Chassis Mount	DO-200AA, A-PUK	DO-200AA, PUK	-
VS-SD1100C04C	Vishay Semiconductor Diodes Division	DIODE MODULE 400V 1400A B-43 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1400A Voltage - Forward (Vf) (Max) @ If: 1.31V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 35mA @ 400V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: B-43, PUK Supplier Device Package: B-43, Hockey PUK Operating Temperature - Junction: -	Paket: B-43, PUK	Lager5.392	400V	1400A	1.31V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	-	35mA @ 400V	-	Stud Mount	B-43, PUK	B-43, Hockey PUK	-
DSI30-12AC	IXYS	DIODE GEN 1.2KV 30A ISOPLUS220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.45V @ 45A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: ISOPLUS220? Supplier Device Package: ISOPLUS220? Operating Temperature - Junction: -55°C ~ 150°C	Paket: ISOPLUS220?	Lager4.592	1200V	30A	1.45V @ 45A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 1200V	-	Through Hole	ISOPLUS220?	ISOPLUS220?	-55°C ~ 150°C
ES3HBHM4G	TSC America Inc.	DIODE, SUPER FAST, 3A, 500V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 500V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-214AA, SMB	Lager6.800	500V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
PMEG2020EJF	Nexperia USA Inc.	PMEG2020EJ/SOD323/SOD2 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paket: -	Lager3.664	-	-	-	-	-	-	-	-	-	-	-
1N4002G B0G	TSC America Inc.	DIODE, 1A, 100V, DO-204AL (DO-41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-204AL, DO-41, Axial	Lager7.568	100V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UES1104	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	Paket: A, Axial	Lager6.036	200V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	-	Through Hole	A, Axial	-	-55°C ~ 150°C
CMOSH2-4L TR	Central Semiconductor Corp	DIODE SCHOTTKY 40V 200MA SOD523 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 50µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: -65°C ~ 150°C	Paket: SC-79, SOD-523	Lager2.832	40V	200mA	500mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	5ns	50µA @ 20V	-	Surface Mount	SC-79, SOD-523	SOD-523	-65°C ~ 150°C
1N5623E3	Microchip Technology	HERMETICALLY SEALED GLASS RECTIF Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
1N3665	Microchip Technology	DIODE GEN PURP 600V 35A DO21 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 35 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Press Fit Package / Case: DO-208AA Supplier Device Package: DO-21 Operating Temperature - Junction: -65°C ~ 175°C	Paket: -	Request a Quote	600 V	35A	1.1 V @ 35 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	-	Press Fit	DO-208AA	DO-21	-65°C ~ 175°C
CD214B-S3M	Bourns Inc.	DIODE GEN PURP 1KV 3A 2SMD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 23pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 2-SMD Operating Temperature - Junction: -65°C ~ 175°C	Paket: -	Request a Quote	1000 V	3A	1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1000 V	23pF @ 4V, 1MHz	Surface Mount	2-SMD, No Lead	2-SMD	-65°C ~ 175°C
VSSA310SHM3_A-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 100V 3A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 100 V Capacitance @ Vr, F: 175pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -40°C ~ 150°C	Paket: -	Request a Quote	100 V	3A	800 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 100 V	175pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-40°C ~ 150°C
MMBD4148-7-G	Diodes Incorporated	DIODE GENERAL PURPOSE SOT23 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MURD420-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 28 ns Current - Reverse Leakage @ Vr: 100 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 175°C	Paket: -	Request a Quote	200 V	4A	840 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	28 ns	100 µA @ 200 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)	-55°C ~ 175°C
1N4148W-HF	Comchip Technology	DIODE GEN PURP 100V 150MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 5 µA @ 75 V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C	Paket: -	Lager231.381	100 V	150mA	1.25 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	5 µA @ 75 V	4pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	150°C
GSBAS21H	Good-Ark Semiconductor	DIODE, SWITCHING, 200MA, 250V, S Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 250 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Lager18.000	250 V	200mA	1.25 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 200 V	5pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 150°C
SF55G-AP	Micro Commercial Co	DIODE GEN PURP 300V 5A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 300 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	Paket: -	Request a Quote	300 V	5A	1.27 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 300 V	30pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
BAV19W_R1_00001	Panjit International Inc.	DIODE GEN PURP 100V 200MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 100 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Lager3.561	100 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 100 V	5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
HSC119JTRF-E	Renesas	HSC119 - RECTIFIER DIODE, 1 ELEM Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
HER503BULK	EIC SEMICONDUCTOR INC.	DIODE GEN PURP 200V 5A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	Paket: -	Request a Quote	200 V	5A	1.1 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 200 V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
JANTX1N5618-TR-1	Microchip Technology	DIODE GEN PURP 600V 1A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 500 nA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C	Paket: -	Request a Quote	600 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 600 V	-	Through Hole	A, Axial	A, Axial	-65°C ~ 200°C
JANKCA1N5711	Microchip Technology	DIODE SCHOTTKY 70V 33MA DO35 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70 V Current - Average Rectified (Io): 33mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 nA @ 50 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C	Paket: -	Request a Quote	70 V	33mA	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	-65°C ~ 150°C
C6D20065H	Wolfspeed, Inc.	SIC, SCHOTTKY DIODE,20A, 650V, T Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	Paket: -	Lager1.974	650 V	20A	1.27 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	-	-	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C

CFRMT102-HF

Comchip Technology

DIODE GEN PURP 100V 1A SOD123H

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123H
Operating Temperature - Junction: -55°C ~ 150°C

Paket: SOD-123H

Lager3.136

100V

1A (DC)

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 100V

15pF @ 4V, 1MHz

Surface Mount

SOD-123H

-55°C ~ 150°C

STTH3L06B

STMicroelectronics

DIODE GEN PURP 600V 3A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85ns
Current - Reverse Leakage @ Vr: 3µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Operating Temperature - Junction: 175°C (Max)

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

Lager2.240

600V

3A

1.3V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

85ns

3µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-Pak

175°C (Max)

VS-50SQ060TR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 5A DO204AR

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 660mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 550µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Supplier Device Package: DO-204AR
Operating Temperature - Junction: -55°C ~ 175°C

Paket: DO-204AR, Axial

Lager5.376

60V

5A

660mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

550µA @ 60V

-

Through Hole

DO-204AR, Axial

DO-204AR

-55°C ~ 175°C

HFA140NH60

Vishay Semiconductor Diodes Division

DIODE MODULE 600V 140A HALF-PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 140A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 140A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 40µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67 HALF-PAK
Supplier Device Package: HALF-PAK
Operating Temperature - Junction: -

Paket: D-67 HALF-PAK

Lager5.728

600V

140A

1.6V @ 140A

Fast Recovery =< 500ns, > 200mA (Io)

140ns

40µA @ 600V

-

Chassis Mount

D-67 HALF-PAK

HALF-PAK

-

D850N34T

Infineon Technologies Industrial Power and Controls Americas

DIODE RECITIFER 2800V 1900A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paket: -

Lager2.384

-

VS-SD300C28C

Vishay Semiconductor Diodes Division

DIODE MODULE 2.8KV 540A D200AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2800V
Current - Average Rectified (Io): 540A
Voltage - Forward (Vf) (Max) @ If: 2.08V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15mA @ 2800V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AA, A-PUK
Supplier Device Package: DO-200AA, PUK
Operating Temperature - Junction: -

Paket: DO-200AA, A-PUK

Lager6.352

2800V

540A

2.08V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

-

15mA @ 2800V

-

Chassis Mount

DO-200AA, A-PUK

DO-200AA, PUK

-

VS-SD1100C04C

Vishay Semiconductor Diodes Division

DIODE MODULE 400V 1400A B-43

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1400A
Voltage - Forward (Vf) (Max) @ If: 1.31V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 35mA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: B-43, PUK
Supplier Device Package: B-43, Hockey PUK
Operating Temperature - Junction: -

Paket: B-43, PUK

Lager5.392

400V

1400A

1.31V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

-

35mA @ 400V

-

Stud Mount

B-43, PUK

B-43, Hockey PUK

-

DSI30-12AC

IXYS

DIODE GEN 1.2KV 30A ISOPLUS220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.45V @ 45A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: ISOPLUS220?
Supplier Device Package: ISOPLUS220?
Operating Temperature - Junction: -55°C ~ 150°C

Paket: ISOPLUS220?

Lager4.592

1200V

30A

1.45V @ 45A

Standard Recovery >500ns, > 200mA (Io)

-

50µA @ 1200V

-

Through Hole

ISOPLUS220?

-55°C ~ 150°C

ES3HBHM4G

TSC America Inc.

DIODE, SUPER FAST, 3A, 500V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 500V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-214AA, SMB

Lager6.800

500V

3A

1.7V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 500V

30pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

PMEG2020EJF

Nexperia USA Inc.

PMEG2020EJ/SOD323/SOD2

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paket: -

Lager3.664

-

1N4002G B0G

TSC America Inc.

DIODE, 1A, 100V, DO-204AL (DO-41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-204AL, DO-41, Axial

Lager7.568

100V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 100V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

UES1104

Microsemi Corporation

DIODE GEN PURP 200V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 150°C

Paket: A, Axial

Lager6.036

200V

1A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 200V

-

Through Hole

A, Axial

-

-55°C ~ 150°C

CMOSH2-4L TR

Central Semiconductor Corp

DIODE SCHOTTKY 40V 200MA SOD523

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 50µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: -65°C ~ 150°C

Paket: SC-79, SOD-523

Lager2.832

40V

200mA

500mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

5ns

50µA @ 20V

-

Surface Mount

SC-79, SOD-523

SOD-523

-65°C ~ 150°C

1N5623E3

Microchip Technology

HERMETICALLY SEALED GLASS RECTIF

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paket: -

Request a Quote

-

1N3665

Microchip Technology

DIODE GEN PURP 600V 35A DO21

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 35 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Press Fit
Package / Case: DO-208AA
Supplier Device Package: DO-21
Operating Temperature - Junction: -65°C ~ 175°C

Paket: -

Request a Quote

600 V

35A

1.1 V @ 35 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 600 V

-

Press Fit

DO-208AA

DO-21

-65°C ~ 175°C

CD214B-S3M

Bourns Inc.

DIODE GEN PURP 1KV 3A 2SMD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 23pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: 2-SMD
Operating Temperature - Junction: -65°C ~ 175°C

Paket: -

Request a Quote

1000 V

3A

1 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 1000 V

23pF @ 4V, 1MHz

Surface Mount

2-SMD, No Lead

2-SMD

-65°C ~ 175°C

VSSA310SHM3_A-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 3A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C

Paket: -

Request a Quote

100 V

3A

800 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

150 µA @ 100 V

175pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-40°C ~ 150°C

MMBD4148-7-G

Diodes Incorporated

DIODE GENERAL PURPOSE SOT23

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paket: -

Request a Quote

-

MURD420-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 28 ns
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C

Paket: -

Request a Quote

200 V

4A

840 mV @ 4 A

Fast Recovery =< 500ns, > 200mA (Io)

28 ns

100 µA @ 200 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252 (DPAK)

-55°C ~ 175°C

1N4148W-HF

Comchip Technology

DIODE GEN PURP 100V 150MA SOD123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C

Paket: -

Lager231.381

100 V

150mA

1.25 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

4 ns

5 µA @ 75 V

4pF @ 0V, 1MHz

Surface Mount

SOD-123

150°C

GSBAS21H

Good-Ark Semiconductor

DIODE, SWITCHING, 200MA, 250V, S

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 250 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

Lager18.000

250 V

200mA

1.25 V @ 200 mA

Small Signal =< 200mA (Io), Any Speed

50 ns

100 nA @ 200 V

5pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-55°C ~ 150°C

SF55G-AP

Micro Commercial Co

DIODE GEN PURP 300V 5A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

Paket: -

Request a Quote

300 V

5A

1.27 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 300 V

30pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

BAV19W_R1_00001

Panjit International Inc.

DIODE GEN PURP 100V 200MA SOD123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

Lager3.561

100 V

200mA

1 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

50 ns

100 nA @ 100 V

5pF @ 0V, 1MHz

Surface Mount

SOD-123

-55°C ~ 150°C

HSC119JTRF-E

Renesas

HSC119 - RECTIFIER DIODE, 1 ELEM

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paket: -

Request a Quote

-

HER503BULK

EIC SEMICONDUCTOR INC.

DIODE GEN PURP 200V 5A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

Paket: -

Request a Quote

200 V

5A

1.1 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 200 V

50pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

JANTX1N5618-TR-1

Microchip Technology

DIODE GEN PURP 600V 1A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C

Paket: -

Request a Quote

600 V

1A

1.3 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

2 µs

500 nA @ 600 V

-

Through Hole

A, Axial

-65°C ~ 200°C

JANKCA1N5711

Microchip Technology

DIODE SCHOTTKY 70V 33MA DO35

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70 V
Current - Average Rectified (Io): 33mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C

Paket: -

Request a Quote

70 V

33mA

1 V @ 15 mA

Small Signal =< 200mA (Io), Any Speed

-

200 nA @ 50 V

2pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-204AH (DO-35)

-65°C ~ 150°C

C6D20065H

Wolfspeed, Inc.

SIC, SCHOTTKY DIODE,20A, 650V, T

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

Paket: -

Lager1.974

650 V

20A

1.27 V @ 20 A

No Recovery Time > 500mA (Io)

0 ns

-

Through Hole

TO-247-2

-55°C ~ 175°C