Page 195 - Dioden - Gleichrichter - Einzeln | Diskrete Halbleiterprodukte

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
IRD3CH24DF6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paket: -	Lager3.808	-	-	-	-	-	-	-	-	-	-	-
MBRB16H50-E3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY TO-263AB Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paket: -	Lager5.824	-	-	-	-	-	-	-	-	-	-	-
CRSH2-2 BK	Central Semiconductor Corp	DIODE SCHOTTKY DO15 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: 170pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 125°C	Paket: DO-204AC, DO-15, Axial	Lager4.000	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	170pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 125°C
R9G20611CSOO	Powerex Inc.	DIODE FAST REC R9G 1100A 600V Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paket: -	Lager4.688	-	-	-	-	-	-	-	-	-	-	-
FFSH20120A	Fairchild/ON Semiconductor	1200V, 20A, SIC SBD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paket: -	Lager6.192	-	-	-	-	-	-	-	-	-	-	-
ES01A	Sanken	DIODE GEN PURP 600V 700MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 3V @ 800mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Paket: Axial	Lager5.360	600V	700mA	3V @ 800mA	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 600V	-	Through Hole	Axial	-	-40°C ~ 150°C
B340LB-E3/5BT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 3A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 450mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C	Paket: DO-214AA, SMB	Lager2.240	40V	3A	450mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-65°C ~ 150°C
CGRC505-G	Comchip Technology	DIODE GEN PURP 600V 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: 150°C (Max)	Paket: DO-214AB, SMC	Lager7.520	600V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	150°C (Max)
GI1-1200GP-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 1A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 10µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	Paket: DO-204AC, DO-15, Axial	Lager4.448	1200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 1200V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
BYM11-600HE3/97	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	Paket: DO-213AB, MELF (Glass)	Lager2.304	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
VSSA210HM3_A/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 2A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 100V Capacitance @ Vr, F: 175pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -40°C ~ 150°C	Paket: DO-214AC, SMA	Lager5.040	100V	2A (DC)	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 100V	175pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-40°C ~ 150°C
HS3GB M4G	TSC America Inc.	DIODE, HIGH EFFICIENT, 3A, 400V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-214AA, SMB	Lager4.928	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	80pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
PMEG3010BEAZ	Nexperia USA Inc.	PMEG3010BEA/SOD323/SOD2 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paket: -	Lager5.248	-	-	-	-	-	-	-	-	-	-	-
B0530WSQ-13-F	Diodes Incorporated	DIODE SCHOTTKY 30V 500MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 450mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: 58pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -40°C ~ 125°C	Paket: SC-76, SOD-323	Lager5.200	30V	500mA	450mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	58pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-40°C ~ 125°C
STPS340UY	STMicroelectronics	DIODE SCHOTTKY 40V 3A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 630mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -40°C ~ 150°C	Paket: DO-214AA, SMB	Lager199.800	40V	3A	630mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	20µA @ 40V	-	Surface Mount	DO-214AA, SMB	SMB	-40°C ~ 150°C
1N4007GP-TP	Micro Commercial Co	DIODE GEN PURP 1KV 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-204AL, DO-41, Axial	Lager8.100	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
P600M-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 6A P600 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -55°C ~ 150°C	Paket: P600, Axial	Lager5.072	1000V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	5µA @ 1000V	150pF @ 4V, 1MHz	Through Hole	P600, Axial	P600	-55°C ~ 150°C
D400N18BVFXPSA1	Infineon Technologies	DIODE GEN PURP 1.8KV 450A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800 V Current - Average Rectified (Io): 450A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 mA @ 1800 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 180°C	Paket: -	Request a Quote	1800 V	450A	-	Standard Recovery >500ns, > 200mA (Io)	-	40 mA @ 1800 V	-	Stud Mount	DO-205AA, DO-8, Stud	-	-40°C ~ 180°C
MUR440S-V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C	Paket: -	Lager6	400 V	4A	1.25 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 400 V	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
SVT10100U_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 100V 10A TO277 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 60 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277 Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Lager4.713	100 V	10A	670 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	60 µA @ 100 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277	-55°C ~ 150°C
SS56F-HF	Comchip Technology	DIODE SCHOTTKY 60V 5A SMAF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 60 V Capacitance @ Vr, F: 300pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Request a Quote	60 V	5A	700 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 60 V	300pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMAF	-55°C ~ 150°C
FR301-AP	Micro Commercial Co	DIODE GEN PURP 50V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 10 µA @ 50 V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Request a Quote	50 V	3A	1.3 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	10 µA @ 50 V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
UGA8120H	Taiwan Semiconductor Corporation	DIODE GEN PURP 1.2KV 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70 ns Current - Reverse Leakage @ Vr: 5 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	Paket: -	Request a Quote	1200 V	8A	2.8 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	5 µA @ 1200 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
SMBD1099T3	onsemi	SS SOT23 SWCH DIO SPCL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SL36A-TPS01	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: 180pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Request a Quote	60 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	180pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SF58G-AP	Micro Commercial Co	DIODE GEN PURP 600V 5A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	Paket: -	Request a Quote	600 V	5A	1.75 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 600 V	30pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
SRAF550H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 5A ITO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Request a Quote	50 V	5A	700 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 50 V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
1N1185	Solid State Inc.	DIODE GEN PURP 12A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C	Paket: -	Request a Quote	-	12A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C

IRD3CH24DF6

Infineon Technologies

DIODE CHIP EMITTER CONTROLLED

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paket: -

Lager3.808

-

MBRB16H50-E3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY TO-263AB

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paket: -

Lager5.824

-

CRSH2-2 BK

Central Semiconductor Corp

DIODE SCHOTTKY DO15

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 125°C

Paket: DO-204AC, DO-15, Axial

Lager4.000

20V

2A

500mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

170pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-65°C ~ 125°C

R9G20611CSOO

Powerex Inc.

DIODE FAST REC R9G 1100A 600V

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paket: -

Lager4.688

-

FFSH20120A

Fairchild/ON Semiconductor

1200V, 20A, SIC SBD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paket: -

Lager6.192

-

ES01A

Sanken

DIODE GEN PURP 600V 700MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 700mA
Voltage - Forward (Vf) (Max) @ If: 3V @ 800mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

Paket: Axial

Lager5.360

600V

700mA

3V @ 800mA

Standard Recovery >500ns, > 200mA (Io)

1.5µs

10µA @ 600V

-

Through Hole

Axial

-

-40°C ~ 150°C

B340LB-E3/5BT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C

Paket: DO-214AA, SMB

Lager2.240

40V

3A

450mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 40V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-65°C ~ 150°C

CGRC505-G

Comchip Technology

DIODE GEN PURP 600V 5A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: 150°C (Max)

Paket: DO-214AB, SMC

Lager7.520

600V

5A

1.15V @ 5A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 600V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

150°C (Max)

GI1-1200GP-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 1A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 10µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-204AC, DO-15, Axial

Lager4.448

1200V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

10µA @ 1200V

-

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-65°C ~ 175°C

BYM11-600HE3/97

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-213AB, MELF (Glass)

Lager2.304

600V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

5µA @ 600V

15pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

VSSA210HM3_A/H

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 2A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 100V
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C

Paket: DO-214AC, SMA

Lager5.040

100V

2A (DC)

700mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 100V

175pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-40°C ~ 150°C

HS3GB M4G

TSC America Inc.

DIODE, HIGH EFFICIENT, 3A, 400V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-214AA, SMB

Lager4.928

400V

3A

1.3V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 400V

80pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

PMEG3010BEAZ

Nexperia USA Inc.

PMEG3010BEA/SOD323/SOD2

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paket: -

Lager5.248

-

B0530WSQ-13-F

Diodes Incorporated

DIODE SCHOTTKY 30V 500MA SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 450mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: 58pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -40°C ~ 125°C

Paket: SC-76, SOD-323

Lager5.200

30V

500mA

450mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

58pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-40°C ~ 125°C

STPS340UY

STMicroelectronics

DIODE SCHOTTKY 40V 3A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 630mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C

Paket: DO-214AA, SMB

Lager199.800

40V

3A

630mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

20µA @ 40V

-

Surface Mount

DO-214AA, SMB

SMB

-40°C ~ 150°C

1N4007GP-TP

Micro Commercial Co

DIODE GEN PURP 1KV 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-204AL, DO-41, Axial

Lager8.100

1000V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

2µs

5µA @ 1000V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

P600M-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 6A P600

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C

Paket: P600, Axial

Lager5.072

1000V

6A

1V @ 6A

Standard Recovery >500ns, > 200mA (Io)

2.5µs

5µA @ 1000V

150pF @ 4V, 1MHz

Through Hole

P600, Axial

P600

-55°C ~ 150°C

D400N18BVFXPSA1

Infineon Technologies

DIODE GEN PURP 1.8KV 450A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Average Rectified (Io): 450A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 180°C

Paket: -

Request a Quote

1800 V

450A

-

Standard Recovery >500ns, > 200mA (Io)

-

40 mA @ 1800 V

-

Stud Mount

DO-205AA, DO-8, Stud

-

-40°C ~ 180°C

MUR440S-V7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 4A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 4 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C

Paket: -

Lager6

400 V

4A

1.25 V @ 4 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 400 V

65pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 175°C

SVT10100U_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 100V 10A TO277

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 60 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

Lager4.713

100 V

10A

670 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

60 µA @ 100 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277

-55°C ~ 150°C

SS56F-HF

Comchip Technology

DIODE SCHOTTKY 60V 5A SMAF

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

Request a Quote

60 V

5A

700 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 60 V

300pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMAF

-55°C ~ 150°C

FR301-AP

Micro Commercial Co

DIODE GEN PURP 50V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

Request a Quote

50 V

3A

1.3 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

10 µA @ 50 V

65pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

UGA8120H

Taiwan Semiconductor Corporation

DIODE GEN PURP 1.2KV 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

Paket: -

Request a Quote

1200 V

8A

2.8 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

70 ns

5 µA @ 1200 V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

SMBD1099T3

onsemi

SS SOT23 SWCH DIO SPCL

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paket: -

Request a Quote

-

SL36A-TPS01

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Capacitance @ Vr, F: 180pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

Request a Quote

60 V

3A

500 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 60 V

180pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

SF58G-AP

Micro Commercial Co

DIODE GEN PURP 600V 5A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

Paket: -

Request a Quote

600 V

5A

1.75 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 600 V

30pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

SRAF550H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 50V 5A ITO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

Request a Quote

50 V

5A

700 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 50 V

-

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

1N1185

Solid State Inc.

DIODE GEN PURP 12A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C

Paket: -

Request a Quote

-

12A

1.2 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 200°C