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Dioden - Gleichrichter - Einzeln

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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
IDK08G65C5XTMA1
Infineon Technologies

DIODE SCHOTTKY 650V 8A TO263-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 1.4mA @ 650V
  • Capacitance @ Vr, F: 250pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager5.296
650V
8A (DC)
1.8V @ 8A
No Recovery Time > 500mA (Io)
0ns
1.4mA @ 650V
250pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
IDB45E60ATMA1
Infineon Technologies

DIODE GEN PURP 600V 71A TO263-3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 71A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 45A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager4.480
600V
71A (DC)
2V @ 45A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
50µA @ 600V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
-55°C ~ 175°C
JANTX1N6661
Microsemi Corporation

DIODE GEN PURP 225V 500MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 225V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50nA @ 225V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-204AH, DO-35, Axial
Lager5.040
225V
500mA
1V @ 400mA
Standard Recovery >500ns, > 200mA (Io)
-
50nA @ 225V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
BAV16W-13-F
Diodes Incorporated

DIODE GEN PURP 100V 150MA SOD123

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 1µA @ 75V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: SOD-123
Lager6.960
100V
150mA
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
4ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
-65°C ~ 150°C
SS26SHE3/61T
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 2A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-214AC, SMA
Lager2.944
60V
2A
750mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 60V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
VS-8EWF04STRL-M3
Vishay Semiconductor Diodes Division

DIODE FAST RECOVERY 8A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55ns
  • Current - Reverse Leakage @ Vr: 100µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager4.864
400V
8A
1.2V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
100µA @ 400V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-40°C ~ 150°C
hot UGF5JT-E3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 5A ITO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 30µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: TO-220-2 Full Pack, Isolated Tab
Lager6.032
600V
5A
1.75V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
30µA @ 600V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
ITO-220AC
-55°C ~ 150°C
BYT52J-TR
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1.4A SOD57

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.4A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-57, Axial
  • Supplier Device Package: SOD-57
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: SOD-57, Axial
Lager2.960
600V
1.4A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 600V
-
Through Hole
SOD-57, Axial
SOD-57
-55°C ~ 175°C
SSA33LHE3_A/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 3A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: DO-214AC, SMA
Lager5.664
30V
3A
450mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-65°C ~ 150°C
EGP10BE-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 22pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: DO-204AL, DO-41, Axial
Lager7.888
100V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
22pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 150°C
hot SL02-M-08
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V DO219-M

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1.1A
  • Voltage - Forward (Vf) (Max) @ If: 420mV @ 1.1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10ns
  • Current - Reverse Leakage @ Vr: 250µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: 125°C (Max)
Paket: DO-219AB
Lager198.600
20V
1.1A
420mV @ 1.1A
Fast Recovery =< 500ns, > 200mA (Io)
10ns
250µA @ 20V
-
Surface Mount
DO-219AB
DO-219AB (SMF)
125°C (Max)
HS1AL RUG
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 50V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-219AB
Lager4.656
50V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
20pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
HER102G R1G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 100V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-204AL, DO-41, Axial
Lager7.856
100V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
PMEG2010EPA,115
Nexperia USA Inc.

DIODE SCHOTTKY 20V 1A 3HUSON

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 375mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 1.9mA @ 20V
  • Capacitance @ Vr, F: 175pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 3-PowerUDFN
  • Supplier Device Package: 3-HUSON (2x2)
  • Operating Temperature - Junction: 150°C (Max)
Paket: 3-PowerUDFN
Lager7.296
20V
1A
375mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
1.9mA @ 20V
175pF @ 1V, 1MHz
Surface Mount
3-PowerUDFN
3-HUSON (2x2)
150°C (Max)
hot STTH5R06D
STMicroelectronics

DIODE GEN PURP 600V 5A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 2.9V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 20µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 175°C (Max)
Paket: TO-220-2
Lager216.516
600V
5A
2.9V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
20µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
175°C (Max)
hot STTH1R06A
STMicroelectronics

DIODE GEN PURP 600V 1A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45ns
  • Current - Reverse Leakage @ Vr: 1µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: 175°C (Max)
Paket: DO-214AC, SMA
Lager1.843.464
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
1µA @ 600V
-
Surface Mount
DO-214AC, SMA
SMA
175°C (Max)
R4230F
Microchip Technology

DIODE GP REV 300V 125A DO205AA

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 125A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 300 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -65°C ~ 200°C
Paket: -
Request a Quote
300 V
125A
1.2 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 300 V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-65°C ~ 200°C
1N5820USE3
Microchip Technology

DIODE SCHOTTKY 20V 3A SQ-MELF B

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: B, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 125°C
Paket: -
Request a Quote
20 V
3A
500 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 20 V
-
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 125°C
SS12HE3_B-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 20V 1A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -65°C ~ 125°C
Paket: -
Request a Quote
20 V
1A
500 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 20 V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-65°C ~ 125°C
JANKCB1N6642
Microchip Technology

DIODE GEN PURP 75V 300MA D AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75 V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 75 V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: D, Axial
  • Supplier Device Package: D-5D
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: -
Request a Quote
75 V
300mA
1.2 V @ 100 mA
Fast Recovery =< 500ns, > 200mA (Io)
5 ns
500 nA @ 75 V
5pF @ 0V, 1MHz
Through Hole
D, Axial
D-5D
-65°C ~ 175°C
BY254
Diotec Semiconductor

DIODE DO201 800V 3A 150C

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201
  • Operating Temperature - Junction: -50°C ~ 150°C
Paket: -
Request a Quote
800 V
3A
1.1 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
1.5 µs
5 µA @ 800 V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201
-50°C ~ 150°C
V2F6-M3-I
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 2A DO219AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 480 µA @ 60 V
  • Capacitance @ Vr, F: 250pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: -
Request a Quote
60 V
2A
600 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
480 µA @ 60 V
250pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-40°C ~ 150°C
HER158-TP
Micro Commercial Co

DIODE GEN PURP 1KV 1.5A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 125°C
Paket: -
Request a Quote
1000 V
1.5A
1.7 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
5 µA @ 1000 V
30pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 125°C
JANTX1N5806-TR-1
Microchip Technology

DIODE GEN PURP 150V 1A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 150 V
  • Capacitance @ Vr, F: 25pF @ 10V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: A, Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: -
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150 V
1A
875 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
1 µA @ 150 V
25pF @ 10V, 1MHz
Through Hole
A, Axial
A, Axial
-65°C ~ 175°C
S1GFS-MWG
Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A SOD128

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: -55°C ~ 150°C
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400 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 400 V
9pF @ 4V, 1MHz
Surface Mount
SOD-128
SOD-128
-55°C ~ 150°C
VS-65APF12L-M3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 65A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 65A
  • Voltage - Forward (Vf) (Max) @ If: 1.42 V @ 65 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 480 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -40°C ~ 150°C
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1200 V
65A
1.42 V @ 65 A
Fast Recovery =< 500ns, > 200mA (Io)
480 ns
100 µA @ 1200 V
-
Through Hole
TO-247-3
TO-247AD
-40°C ~ 150°C
B340CE-13
Diodes Incorporated

DIODE SCHOTTKY 40V 3A SMC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 40 V
  • Capacitance @ Vr, F: 140pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager7.929
40 V
3A
500 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 40 V
140pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC
-55°C ~ 150°C
25FR10
Solid State Inc.

DIODE GEN PURP REV 100V 25A DO4

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 150°C
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100 V
25A
1.2 V @ 25 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 100 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 150°C