Page 384 - Dioden - Gleichrichter - Einzeln | Diskrete Halbleiterprodukte

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
GP10W-M3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.5KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1500V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 1500V Capacitance @ Vr, F: 5pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	Paket: DO-204AL, DO-41, Axial	Lager4.592	1500V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 1500V	5pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
EGP10GE-M3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	Paket: DO-204AL, DO-41, Axial	Lager5.536	400V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
DSB3A30	Microsemi Corporation	DIODE SCHOTTKY 30V 3A DO204AH Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 125°C	Paket: DO-204AH, DO-35, Axial	Lager3.328	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	-	Through Hole	DO-204AH, DO-35, Axial	-	-65°C ~ 125°C
STTH20R04G	STMicroelectronics	DIODE GEN PURP 400V 20A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 20µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max)	Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Lager5.232	400V	20A	1.7V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	20µA @ 400V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	175°C (Max)
MBR10100	ON Semiconductor	DIODE SCHOTTKY 100V 10A TO220-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C	Paket: TO-220-2	Lager741.192	100V	10A	800mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 175°C
VS-SD1100C08L	Vishay Semiconductor Diodes Division	DIODE MODULE 800V 1170A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1170A Voltage - Forward (Vf) (Max) @ If: 1.31V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15mA @ 800V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: B-43, PUK Supplier Device Package: B-43, Hockey PUK Operating Temperature - Junction: -	Paket: B-43, PUK	Lager3.456	800V	1170A	1.31V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 800V	-	Stud Mount	B-43, PUK	B-43, Hockey PUK	-
D650N08T	Infineon Technologies Industrial Power and Controls Americas	DIODE RECTIFIER 600V 721A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paket: -	Lager5.024	-	-	-	-	-	-	-	-	-	-	-
JANTXV1N5618US	Microsemi Corporation	DIODE GEN PURP 600V 1A D5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C	Paket: SQ-MELF, A	Lager7.872	600V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 600V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
MBR30H100MFST1G	ON Semiconductor	DIODE SCHOTTKY 100V 30A 5DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 900mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 150°C	Paket: 8-PowerTDFN, 5 Leads	Lager5.104	100V	30A	900mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	8-PowerTDFN, 5 Leads	5-DFN (5x6) (8-SOFL)	-55°C ~ 150°C
RGP10KE-E3/91	Vishay Semiconductor Diodes Division	DIODE SW 1A 800V 500NS DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Paket: DO-204AL, DO-41, Axial	Lager2.880	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
RL251GP-TP	Micro Commercial Co	DIODE GEN PURP 2.5A 50V R3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R-3, Axial Supplier Device Package: R-3 Operating Temperature - Junction: -55°C ~ 150°C	Paket: R-3, Axial	Lager3.280	50V	2.5A	1.1V @ 2.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	40pF @ 4V, 1MHz	Through Hole	R-3, Axial	R-3	-55°C ~ 150°C
GB02SHT01-46	GeneSiC Semiconductor	DIODE SCHOTTKY 100V 4A Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 76pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Supplier Device Package: TO-46 Operating Temperature - Junction: -55°C ~ 225°C	Paket: TO-206AB, TO-46-3 Metal Can	Lager5.712	100V	4A (DC)	1.6V @ 1A	No Recovery Time > 500mA (Io)	0ns	5µA @ 100V	76pF @ 1V, 1MHz	Through Hole	TO-206AB, TO-46-3 Metal Can	TO-46	-55°C ~ 225°C
STTH1512G	STMicroelectronics	DIODE GEN PURP 1.2KV 15A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.1V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 105ns Current - Reverse Leakage @ Vr: 15µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max)	Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Lager8.592	1200V	15A	2.1V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	105ns	15µA @ 1200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	175°C (Max)
CMDSH-4E TR	Central Semiconductor Corp	DIODE SCHOTTKY 40V 200MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 500nA @ 25V Capacitance @ Vr, F: 7pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C	Paket: SC-76, SOD-323	Lager36.000	40V	200mA	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	5ns	500nA @ 25V	7pF @ 1V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-65°C ~ 150°C
CDBZC0130L-HF	Comchip Technology	DIODE SCHOTTKY 30V 100MA 0201 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 370mV @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 7µA @ 10V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: 0201/DFN0603 Operating Temperature - Junction: -40°C ~ 125°C	Paket: 0201 (0603 Metric)	Lager107.418	30V	100mA	370mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	7µA @ 10V	-	Surface Mount	0201 (0603 Metric)	0201/DFN0603	-40°C ~ 125°C
SBR3A40SAF-13	Diodes Incorporated	DIODE SBR 40V 3A SMAFLAT Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 530mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	Paket: DO-214AC, SMA	Lager222.600	40V	3A	530mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
BAT54SD-RFG	Taiwan Semiconductor Corporation	SOT-363, 30V, 0.2A, SCHOTTKY DIO Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 2 µA @ 25 V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363 Operating Temperature - Junction: -65°C ~ 150°C	Paket: -	Lager9.000	30 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	2 µA @ 25 V	10pF @ 1V, 1MHz	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363	-65°C ~ 150°C
D1031SH45TXPSA1	Infineon Technologies	DIODE GEN PURP 4.5KV 1450A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4500 V Current - Average Rectified (Io): 1450A Voltage - Forward (Vf) (Max) @ If: 4.2 V @ 2500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 mA @ 4500 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AD Supplier Device Package: - Operating Temperature - Junction: 0°C ~ 140°C	Paket: -	Request a Quote	4500 V	1450A	4.2 V @ 2500 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 4500 V	-	Chassis Mount	DO-200AD	-	0°C ~ 140°C
PMEG050V030EPE-QZ	Nexperia USA Inc.	DIODE SCHOTTKY 50V 3A CFP15B Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12 ns Current - Reverse Leakage @ Vr: 100 µA @ 50 V Capacitance @ Vr, F: 323pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: CFP15B Operating Temperature - Junction: 175°C	Paket: -	Lager14.970	50 V	3A	530 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	12 ns	100 µA @ 50 V	323pF @ 1V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	CFP15B	175°C
SF1606G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 16A TO220AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Lager2.997	400 V	16A	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	60pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
1SS400S9TE61	Rohm Semiconductor	DIODE GENERAL PURPOSE SMD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
CDBV130-HF	Comchip Technology	DIODE SCHOTTKY 30V 1A SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 200 V Capacitance @ Vr, F: 120pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -40°C ~ 125°C	Paket: -	Request a Quote	30 V	1A	550 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 200 V	120pF @ 4V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-40°C ~ 125°C
SMD24PL-TPS06	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 210pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 125°C	Paket: -	Request a Quote	40 V	2A	500 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	210pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-65°C ~ 125°C
SDM02U30LP3-7B-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 370 mV @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: X3-DFN0603-2 Operating Temperature - Junction: -65°C ~ 150°C	Paket: -	Request a Quote	30 V	100mA	370 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	-	4 µA @ 30 V	-	Surface Mount	0201 (0603 Metric)	X3-DFN0603-2	-65°C ~ 150°C
RB540VM-40TE-17	Rohm Semiconductor	DIODE SCHOTTKY 40V 200MA UMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 710 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: UMD2 Operating Temperature - Junction: 150°C	Paket: -	Lager9.000	40 V	200mA	710 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	15 µA @ 40 V	-	Surface Mount	SC-90, SOD-323F	UMD2	150°C
688-18	Microchip Technology	DIODE GEN PURP 18KV 350MA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 18000 V Current - Average Rectified (Io): 350mA Voltage - Forward (Vf) (Max) @ If: 30 V @ 400 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 2 µA @ 18000 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 150°C	Paket: -	Request a Quote	18000 V	350mA	30 V @ 400 mA	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	2 µA @ 18000 V	-	Chassis Mount	Module	-	-65°C ~ 150°C
V2PM10L-M3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 100V 1.9A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1.9A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 5 V Capacitance @ Vr, F: 195pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -40°C ~ 175°C	Paket: -	Request a Quote	100 V	1.9A	550 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 5 V	195pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-40°C ~ 175°C
1N1346B	Microchip Technology	STANDARD RECTIFIER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C	Paket: -	Request a Quote	400 V	16A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4 (DO-203AA)	-65°C ~ 200°C
HS5B-V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Request a Quote	100 V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 100 V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
BYV29B-300HE3_A-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 300V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 300 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C	Paket: -	Request a Quote	300 V	8A	1.25 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 300 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-40°C ~ 150°C

GP10W-M3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.5KV 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1500V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 1500V
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C

Paket: DO-204AL, DO-41, Axial

Lager4.592

1500V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 1500V

5pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 150°C

EGP10GE-M3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C

Paket: DO-204AL, DO-41, Axial

Lager5.536

400V

1A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 400V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 150°C

DSB3A30

Microsemi Corporation

DIODE SCHOTTKY 30V 3A DO204AH

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 125°C

Paket: DO-204AH, DO-35, Axial

Lager3.328

30V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 30V

-

Through Hole

DO-204AH, DO-35, Axial

-

-65°C ~ 125°C

STTH20R04G

STMicroelectronics

DIODE GEN PURP 400V 20A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45ns
Current - Reverse Leakage @ Vr: 20µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lager5.232

400V

20A

1.7V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

45ns

20µA @ 400V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

175°C (Max)

MBR10100

ON Semiconductor

DIODE SCHOTTKY 100V 10A TO220-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C

Paket: TO-220-2

Lager741.192

100V

10A

800mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Through Hole

TO-220-2

-65°C ~ 175°C

VS-SD1100C08L

Vishay Semiconductor Diodes Division

DIODE MODULE 800V 1170A DO200AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1170A
Voltage - Forward (Vf) (Max) @ If: 1.31V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15mA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: B-43, PUK
Supplier Device Package: B-43, Hockey PUK
Operating Temperature - Junction: -

Paket: B-43, PUK

Lager3.456

800V

1170A

1.31V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

-

15mA @ 800V

-

Stud Mount

B-43, PUK

B-43, Hockey PUK

-

D650N08T

Infineon Technologies Industrial Power and Controls Americas

DIODE RECTIFIER 600V 721A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paket: -

Lager5.024

-

JANTXV1N5618US

Microsemi Corporation

DIODE GEN PURP 600V 1A D5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C

Paket: SQ-MELF, A

Lager7.872

600V

1A

1.3V @ 3A

Standard Recovery >500ns, > 200mA (Io)

2µs

500nA @ 600V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 200°C

MBR30H100MFST1G

ON Semiconductor

DIODE SCHOTTKY 100V 30A 5DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: 8-PowerTDFN, 5 Leads

Lager5.104

100V

30A

900mV @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Surface Mount

8-PowerTDFN, 5 Leads

5-DFN (5x6) (8-SOFL)

-55°C ~ 150°C

RGP10KE-E3/91

Vishay Semiconductor Diodes Division

DIODE SW 1A 800V 500NS DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-204AL, DO-41, Axial

Lager2.880

800V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 800V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

RL251GP-TP

Micro Commercial Co

DIODE GEN PURP 2.5A 50V R3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R-3, Axial
Supplier Device Package: R-3
Operating Temperature - Junction: -55°C ~ 150°C

Paket: R-3, Axial

Lager3.280

50V

2.5A

1.1V @ 2.5A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 50V

40pF @ 4V, 1MHz

Through Hole

R-3, Axial

R-3

-55°C ~ 150°C

GB02SHT01-46

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 4A

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 225°C

Paket: TO-206AB, TO-46-3 Metal Can

Lager5.712

100V

4A (DC)

1.6V @ 1A

No Recovery Time > 500mA (Io)

0ns

5µA @ 100V

76pF @ 1V, 1MHz

Through Hole

TO-206AB, TO-46-3 Metal Can

TO-46

-55°C ~ 225°C

STTH1512G

STMicroelectronics

DIODE GEN PURP 1.2KV 15A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105ns
Current - Reverse Leakage @ Vr: 15µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lager8.592

1200V

15A

2.1V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

105ns

15µA @ 1200V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

175°C (Max)

CMDSH-4E TR

Central Semiconductor Corp

DIODE SCHOTTKY 40V 200MA SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 500nA @ 25V
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C

Paket: SC-76, SOD-323

Lager36.000

40V

200mA

1V @ 200mA

Small Signal =< 200mA (Io), Any Speed

5ns

500nA @ 25V

7pF @ 1V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-65°C ~ 150°C

CDBZC0130L-HF

Comchip Technology

DIODE SCHOTTKY 30V 100MA 0201

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 370mV @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 7µA @ 10V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Supplier Device Package: 0201/DFN0603
Operating Temperature - Junction: -40°C ~ 125°C

Paket: 0201 (0603 Metric)

Lager107.418

30V

100mA

370mV @ 10mA

Small Signal =< 200mA (Io), Any Speed

-

7µA @ 10V

-

Surface Mount

0201 (0603 Metric)

0201/DFN0603

-40°C ~ 125°C

SBR3A40SAF-13

Diodes Incorporated

DIODE SBR 40V 3A SMAFLAT

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 530mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C

Paket: DO-214AC, SMA

Lager222.600

40V

3A

530mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 40V

-

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 150°C

BAT54SD-RFG

Taiwan Semiconductor Corporation

SOT-363, 30V, 0.2A, SCHOTTKY DIO

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C

Paket: -

Lager9.000

30 V

200mA

1 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

5 ns

2 µA @ 25 V

10pF @ 1V, 1MHz

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

-65°C ~ 150°C

D1031SH45TXPSA1

Infineon Technologies

DIODE GEN PURP 4.5KV 1450A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4500 V
Current - Average Rectified (Io): 1450A
Voltage - Forward (Vf) (Max) @ If: 4.2 V @ 2500 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 mA @ 4500 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AD
Supplier Device Package: -
Operating Temperature - Junction: 0°C ~ 140°C

Paket: -

Request a Quote

4500 V

1450A

4.2 V @ 2500 A

Standard Recovery >500ns, > 200mA (Io)

-

100 mA @ 4500 V

-

Chassis Mount

DO-200AD

-

0°C ~ 140°C

PMEG050V030EPE-QZ

Nexperia USA Inc.

DIODE SCHOTTKY 50V 3A CFP15B

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Capacitance @ Vr, F: 323pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: CFP15B
Operating Temperature - Junction: 175°C

Paket: -

Lager14.970

50 V

3A

530 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

12 ns

100 µA @ 50 V

323pF @ 1V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

CFP15B

175°C

SF1606G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 16A TO220AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

Lager2.997

400 V

16A

1.3 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 400 V

60pF @ 4V, 1MHz

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C

1SS400S9TE61

Rohm Semiconductor

DIODE GENERAL PURPOSE SMD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paket: -

Request a Quote

-

CDBV130-HF

Comchip Technology

DIODE SCHOTTKY 30V 1A SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -40°C ~ 125°C

Paket: -

Request a Quote

30 V

1A

550 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 200 V

120pF @ 4V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-40°C ~ 125°C

SMD24PL-TPS06

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: 210pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 125°C

Paket: -

Request a Quote

40 V

2A

500 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 40 V

210pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-65°C ~ 125°C

SDM02U30LP3-7B-2477

Diodes Incorporated

DIODE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Supplier Device Package: X3-DFN0603-2
Operating Temperature - Junction: -65°C ~ 150°C

Paket: -

Request a Quote

30 V

100mA

370 mV @ 10 mA

Small Signal =< 200mA (Io), Any Speed

-

4 µA @ 30 V

-

Surface Mount

0201 (0603 Metric)

X3-DFN0603-2

-65°C ~ 150°C

RB540VM-40TE-17

Rohm Semiconductor

DIODE SCHOTTKY 40V 200MA UMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C

Paket: -

Lager9.000

40 V

200mA

710 mV @ 100 mA

Small Signal =< 200mA (Io), Any Speed

-

15 µA @ 40 V

-

Surface Mount

SC-90, SOD-323F

UMD2

150°C

688-18

Microchip Technology

DIODE GEN PURP 18KV 350MA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 18000 V
Current - Average Rectified (Io): 350mA
Voltage - Forward (Vf) (Max) @ If: 30 V @ 400 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 2 µA @ 18000 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 150°C

Paket: -

Request a Quote

18000 V

350mA

30 V @ 400 mA

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

2 µA @ 18000 V

-

Chassis Mount

Module

-

-65°C ~ 150°C

V2PM10L-M3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 1.9A DO220AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1.9A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 5 V
Capacitance @ Vr, F: 195pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -40°C ~ 175°C

Paket: -

Request a Quote

100 V

1.9A

550 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 5 V

195pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-40°C ~ 175°C

1N1346B

Microchip Technology

STANDARD RECTIFIER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C

Paket: -

Request a Quote

400 V

16A

1.3 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 400 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4 (DO-203AA)

-65°C ~ 200°C

HS5B-V6G

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 5A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

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100 V

5A

-

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 100 V

80pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

BYV29B-300HE3_A-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 300V 8A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C

Paket: -

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300 V

8A

1.25 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 300 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-40°C ~ 150°C