Page 69 - Dioden - Gleichrichter - Einzeln | Diskrete Halbleiterprodukte

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
T484F	Crydom Co.	MODULE POWER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paket: -	Lager5.808	-	-	-	-	-	-	-	-	-	-	-
S1DHE3/5AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-214AC, SMA	Lager2.784	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	1µA @ 200V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
1N4004L-T	Diodes Incorporated	DIODE GEN PURP 400V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	Paket: DO-204AL, DO-41, Axial	Lager4.208	400V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
CRNA20-1200	Crydom Co.	DIODE GP 1.2KV 12.7A TO220AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 12.7A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Isolated Tab Supplier Device Package: TO-220AB Operating Temperature - Junction: -40°C ~ 125°C	Paket: TO-220-2 Isolated Tab	Lager3.424	1200V	12.7A	1.1V @ 20A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 1200V	-	Through Hole	TO-220-2 Isolated Tab	TO-220AB	-40°C ~ 125°C
1N4148T-72	Rohm Semiconductor	DIODE GEN PURP 75V 150MA GSD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: GSD Operating Temperature - Junction: -65°C ~ 200°C	Paket: DO-204AH, DO-35, Axial	Lager960.120	75V	150mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	GSD	-65°C ~ 200°C
SD103R14S15PV	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.4KV 110A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 110A Voltage - Forward (Vf) (Max) @ If: 2.23V @ 345A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 35mA @ 1400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AC, DO-30, Stud Supplier Device Package: DO-205AC (DO-30) Operating Temperature - Junction: -40°C ~ 125°C	Paket: DO-205AC, DO-30, Stud	Lager2.656	1400V	110A	2.23V @ 345A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	35mA @ 1400V	-	Chassis, Stud Mount	DO-205AC, DO-30, Stud	DO-205AC (DO-30)	-40°C ~ 125°C
ES3FBHR5G	TSC America Inc.	DIODE, SUPER FAST, 3A, 300V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.13V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: 41pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-214AA, SMB	Lager4.384	300V	3A	1.13V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	41pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
FR153G A0G	TSC America Inc.	DIODE, FAST, 1.5A, 200V, 150NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-204AC, DO-15, Axial	Lager5.856	200V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF14G R0G	TSC America Inc.	DIODE, SUPER FAST, 1A, 200V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-204AL, DO-41, Axial	Lager5.488	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
CDSV3-19-G	Comchip Technology	DIODE GEN PURP 120V 200MA SOT323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 100V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323 Operating Temperature - Junction: -55°C ~ 150°C	Paket: SC-70, SOT-323	Lager5.840	120V	200mA (DC)	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 100V	5pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	-55°C ~ 150°C
CDSF4148-HF	Comchip Technology	DIODE GEN PURP 75V 150MA 1005 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 2.5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005/SOD-323F Operating Temperature - Junction: 125°C (Max)	Paket: 1005 (2512 Metric)	Lager36.000	75V	150mA	1V @ 50mA	Small Signal =< 200mA (Io), Any Speed	4ns	2.5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	1005 (2512 Metric)	1005/SOD-323F	125°C (Max)
SDT30A100CT	Diodes Incorporated	SCHOTTKY RECTIFIER TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 730mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	Paket: TO-220-3	Lager7.600	100V	15A	730mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
HS5J R7G	TSC America Inc.	DIODE, HIGH EFFICIENT, 5A, 600V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-214AB, SMC	Lager3.984	600V	5A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
RB521CS-30T2RA	Rohm Semiconductor	DIODE SCHOTTKY 30V 100MA VMN2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 350mV @ 10mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 10V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-923 Supplier Device Package: VMN2 Operating Temperature - Junction: 150°C (Max)	Paket: SOD-923	Lager2.411.700	30V	100mA	350mV @ 10mA	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 10V	-	Surface Mount	SOD-923	VMN2	150°C (Max)
CDBA2200-HF	Comchip Technology	DIODE SCHOTTKY 200V 2A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 200V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-214AC, SMA	Lager3.056	200V	2A (DC)	900mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 200V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
STPS10L60D	STMicroelectronics	DIODE SCHOTTKY 60V 10A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 600mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 350µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 150°C (Max)	Paket: TO-220-2	Lager227.784	60V	10A	600mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	350µA @ 60V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
BAS521Q-13-2462	Diodes Incorporated	DIODE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 150 nA @ 250 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: -65°C ~ 150°C	Paket: -	Request a Quote	300 V	250mA	1.1 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	150 nA @ 250 V	5pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	-65°C ~ 150°C
JAN1N6940UTK3CS-TR	Microchip Technology	DIODE SCHOTTKY 15V 150A THINKEY3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 150 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 mA @ 15 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™3 Supplier Device Package: ThinKey™3 Operating Temperature - Junction: -65°C ~ 175°C	Paket: -	Request a Quote	15 V	150A	500 mV @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 15 V	-	Surface Mount	ThinKey™3	ThinKey™3	-65°C ~ 175°C
MBRS16100H	Taiwan Semiconductor Corporation	16A, 100V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 16 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Request a Quote	100 V	16A	850 mV @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 100 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
SK54BLF_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 40V 5A SMBF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 460 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 430pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AA, SMB Flat Leads Supplier Device Package: SMBF Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Lager39.198	40 V	5A	460 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	430pF @ 4V, 1MHz	Surface Mount	DO-221AA, SMB Flat Leads	SMBF	-55°C ~ 150°C
APT30D120SG	Microchip Technology	DIODE GEN PURP 1.2KV 30A D3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 370 ns Current - Reverse Leakage @ Vr: 250 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Supplier Device Package: D3PAK Operating Temperature - Junction: -55°C ~ 175°C	Paket: -	Request a Quote	1200 V	30A	2.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	370 ns	250 µA @ 1200 V	-	Surface Mount	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	D3PAK	-55°C ~ 175°C
SK35B	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 3A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Request a Quote	50 V	3A	750 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 50 V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
MSASC75W100FV	Microchip Technology	DIODE SCHOTTKY 100V 75A THINKEY4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 75 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™4 Supplier Device Package: ThinKey™4 Operating Temperature - Junction: -55°C ~ 175°C	Paket: -	Request a Quote	100 V	75A	920 mV @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	-	Surface Mount	ThinKey™4	ThinKey™4	-55°C ~ 175°C
CDS5711UR-1-TR	Microchip Technology	DIODE SMALL-SIGNAL SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
ACGRC504-G	Comchip Technology	DIODE GEN PURP 400V 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1700 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Request a Quote	400 V	5A	1.15 V @ 5 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1700 V	25pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
NRVBSS23FA	onsemi	DIODE SCHOTTKY 30V 2A SOD123FA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Current - Reverse Leakage @ Vr: 400 µA @ 30 V Capacitance @ Vr, F: 120pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123FA Operating Temperature - Junction: -55°C ~ 125°C	Paket: -	Request a Quote	30 V	2A	500 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	10 ns	400 µA @ 30 V	120pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123FA	-55°C ~ 125°C
SR2010-BP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 100 V Capacitance @ Vr, F: 170pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -50°C ~ 125°C	Paket: -	Request a Quote	100 V	2A	850 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 100 V	170pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-50°C ~ 125°C
WNSC5D08650X6Q	WeEn Semiconductors	DIODE SIL CARBIDE 650V 8A TO220F Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 40 µA @ 650 V Capacitance @ Vr, F: 267pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	Paket: -	Request a Quote	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	267pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C

T484F

Crydom Co.

MODULE POWER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paket: -

Lager5.808

-

S1DHE3/5AT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-214AC, SMA

Lager2.784

200V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

1µA @ 200V

12pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

1N4004L-T

Diodes Incorporated

DIODE GEN PURP 400V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

Paket: DO-204AL, DO-41, Axial

Lager4.208

400V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 400V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

CRNA20-1200

Crydom Co.

DIODE GP 1.2KV 12.7A TO220AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 12.7A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Isolated Tab
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -40°C ~ 125°C

Paket: TO-220-2 Isolated Tab

Lager3.424

1200V

12.7A

1.1V @ 20A

Standard Recovery >500ns, > 200mA (Io)

-

100µA @ 1200V

-

Through Hole

TO-220-2 Isolated Tab

TO-220AB

-40°C ~ 125°C

1N4148T-72

Rohm Semiconductor

DIODE GEN PURP 75V 150MA GSD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 5µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: GSD
Operating Temperature - Junction: -65°C ~ 200°C

Paket: DO-204AH, DO-35, Axial

Lager960.120

75V

150mA

1V @ 10mA

Small Signal =< 200mA (Io), Any Speed

4ns

5µA @ 75V

4pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

GSD

-65°C ~ 200°C

SD103R14S15PV

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.4KV 110A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io): 110A
Voltage - Forward (Vf) (Max) @ If: 2.23V @ 345A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 35mA @ 1400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AC, DO-30, Stud
Supplier Device Package: DO-205AC (DO-30)
Operating Temperature - Junction: -40°C ~ 125°C

Paket: DO-205AC, DO-30, Stud

Lager2.656

1400V

110A

2.23V @ 345A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

35mA @ 1400V

-

Chassis, Stud Mount

DO-205AC, DO-30, Stud

DO-205AC (DO-30)

-40°C ~ 125°C

ES3FBHR5G

TSC America Inc.

DIODE, SUPER FAST, 3A, 300V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.13V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 300V
Capacitance @ Vr, F: 41pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-214AA, SMB

Lager4.384

300V

3A

1.13V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 300V

41pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

FR153G A0G

TSC America Inc.

DIODE, FAST, 1.5A, 200V, 150NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-204AC, DO-15, Axial

Lager5.856

200V

1.5A

1.3V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

20pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

SF14G R0G

TSC America Inc.

DIODE, SUPER FAST, 1A, 200V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-204AL, DO-41, Axial

Lager5.488

200V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 200V

20pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

CDSV3-19-G

Comchip Technology

DIODE GEN PURP 120V 200MA SOT323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 100V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C

Paket: SC-70, SOT-323

Lager5.840

120V

200mA (DC)

1.25V @ 200mA

Small Signal =< 200mA (Io), Any Speed

50ns

100nA @ 100V

5pF @ 0V, 1MHz

Surface Mount

SC-70, SOT-323

SOT-323

-55°C ~ 150°C

CDSF4148-HF

Comchip Technology

DIODE GEN PURP 75V 150MA 1005

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 2.5µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 1005 (2512 Metric)
Supplier Device Package: 1005/SOD-323F
Operating Temperature - Junction: 125°C (Max)

Paket: 1005 (2512 Metric)

Lager36.000

75V

150mA

1V @ 50mA

Small Signal =< 200mA (Io), Any Speed

4ns

2.5µA @ 75V

4pF @ 0V, 1MHz

Surface Mount

1005 (2512 Metric)

1005/SOD-323F

125°C (Max)

SDT30A100CT

Diodes Incorporated

SCHOTTKY RECTIFIER TO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 730mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

Paket: TO-220-3

Lager7.600

100V

15A

730mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C

HS5J R7G

TSC America Inc.

DIODE, HIGH EFFICIENT, 5A, 600V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-214AB, SMC

Lager3.984

600V

5A

1.7V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 600V

50pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

RB521CS-30T2RA

Rohm Semiconductor

DIODE SCHOTTKY 30V 100MA VMN2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 350mV @ 10mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 10V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-923
Supplier Device Package: VMN2
Operating Temperature - Junction: 150°C (Max)

Paket: SOD-923

Lager2.411.700

30V

100mA

350mV @ 10mA

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 10V

-

Surface Mount

SOD-923

VMN2

150°C (Max)

CDBA2200-HF

Comchip Technology

DIODE SCHOTTKY 200V 2A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 200V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-214AC, SMA

Lager3.056

200V

2A (DC)

900mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 200V

30pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

STPS10L60D

STMicroelectronics

DIODE SCHOTTKY 60V 10A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 350µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 150°C (Max)

Paket: TO-220-2

Lager227.784

60V

10A

600mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

350µA @ 60V

-

Through Hole

TO-220-2

TO-220AC

150°C (Max)

BAS521Q-13-2462

Diodes Incorporated

DIODE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 150 nA @ 250 V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: -65°C ~ 150°C

Paket: -

Request a Quote

300 V

250mA

1.1 V @ 100 mA

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

150 nA @ 250 V

5pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

SOD-523

-65°C ~ 150°C

JAN1N6940UTK3CS-TR

Microchip Technology

DIODE SCHOTTKY 15V 150A THINKEY3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 150 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 mA @ 15 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: ThinKey™3
Supplier Device Package: ThinKey™3
Operating Temperature - Junction: -65°C ~ 175°C

Paket: -

Request a Quote

15 V

150A

500 mV @ 150 A

Fast Recovery =< 500ns, > 200mA (Io)

-

5 mA @ 15 V

-

Surface Mount

ThinKey™3

-65°C ~ 175°C

MBRS16100H

Taiwan Semiconductor Corporation

16A, 100V, SCHOTTKY RECTIFIER

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 16 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

Request a Quote

100 V

16A

850 mV @ 16 A

Fast Recovery =< 500ns, > 200mA (Io)

-

300 µA @ 100 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 150°C

SK54BLF_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 40V 5A SMBF

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: 430pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

Lager39.198

40 V

5A

460 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 40 V

430pF @ 4V, 1MHz

Surface Mount

DO-221AA, SMB Flat Leads

SMBF

-55°C ~ 150°C

APT30D120SG

Microchip Technology

DIODE GEN PURP 1.2KV 30A D3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package: D3PAK
Operating Temperature - Junction: -55°C ~ 175°C

Paket: -

Request a Quote

1200 V

30A

2.5 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

370 ns

250 µA @ 1200 V

-

Surface Mount

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

D3PAK

-55°C ~ 175°C

SK35B

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 50V 3A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

Request a Quote

50 V

3A

750 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 50 V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

MSASC75W100FV

Microchip Technology

DIODE SCHOTTKY 100V 75A THINKEY4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 75 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: ThinKey™4
Supplier Device Package: ThinKey™4
Operating Temperature - Junction: -55°C ~ 175°C

Paket: -

Request a Quote

100 V

75A

920 mV @ 75 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 100 V

-

Surface Mount

ThinKey™4

-55°C ~ 175°C

CDS5711UR-1-TR

Microchip Technology

DIODE SMALL-SIGNAL SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paket: -

Request a Quote

-

ACGRC504-G

Comchip Technology

DIODE GEN PURP 400V 5A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 1700 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

Request a Quote

400 V

5A

1.15 V @ 5 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 1700 V

25pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

NRVBSS23FA

onsemi

DIODE SCHOTTKY 30V 2A SOD123FA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 125°C

Paket: -

Request a Quote

30 V

2A

500 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

10 ns

400 µA @ 30 V

120pF @ 4V, 1MHz

Surface Mount

SOD-123W

SOD-123FA

-55°C ~ 125°C

SR2010-BP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -50°C ~ 125°C

Paket: -

Request a Quote

100 V

2A

850 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 100 V

170pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-50°C ~ 125°C

WNSC5D08650X6Q

WeEn Semiconductors

DIODE SIL CARBIDE 650V 8A TO220F

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Capacitance @ Vr, F: 267pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

Paket: -

Request a Quote

650 V

8A

1.7 V @ 8 A

No Recovery Time > 500mA (Io)

0 ns

40 µA @ 650 V

267pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C