Dioden - Gleichrichter - Einzeln

1N4005-N-2-4-AP

Micro Commercial Co

DIODE GEN PURP 600V 1A DO-41

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-204AL, DO-41, Axial

HFA06TB120STRL

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 6A D2PAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 3V @ 6A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 80ns
• Current - Reverse Leakage @ Vr: 5µA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

VSKE320-04

Vishay Semiconductor Diodes Division

DIODE MODULE 400V 320A MAGNAPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 320A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK?
• Supplier Device Package: MAGN-A-PAK?
• Operating Temperature - Junction: -

Paket: 3-MAGN-A-PAK?

R6201040XXOO

Powerex Inc.

DIODE MODULE 1KV 400A DO200AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 400A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 9µs
• Current - Reverse Leakage @ Vr: 50mA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AA, A-PUK
• Supplier Device Package: DO-200AA, R62
• Operating Temperature - Junction: -

Paket: DO-200AA, A-PUK

JANTX1N4148UB2

Microsemi Corporation

DIODE GEN PURP 75V 200MA SMD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 75V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 20ns
• Current - Reverse Leakage @ Vr: 500nA @ 75V
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, No Lead
• Supplier Device Package: UB2
• Operating Temperature - Junction: -65°C ~ 200°C

Paket: 2-SMD, No Lead

SB520-T

Diodes Incorporated

DIODE SCHOTTKY 20V 5A DO201AD

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -65°C ~ 125°C

Paket: DO-201AD, Axial

SR510HB0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 5A, 1

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 850mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-201AD, Axial

SF4001-TR

Vishay Semiconductor Diodes Division

DIODE AVAL 1A 50V SOD-57

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: 76pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: SOD-57, Axial
• Supplier Device Package: SOD-57
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: SOD-57, Axial

GP10D-4003EHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -

Paket: DO-204AL, DO-41, Axial

CURA107-HF

Comchip Technology

DIODE GEN PURP 1KV 1A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 100ns
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: 150°C (Max)

Paket: DO-214AC, SMA

ES1DL MQG

TSC America Inc.

DIODE, SUPER FAST, 1A, 200V, 35N

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-219AB

SD107WS-7-F

Diodes Incorporated

DIODE SCHOTTKY 30V 100MA SOD323

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 100mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1µA @ 25V
• Capacitance @ Vr, F: 7pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323
• Operating Temperature - Junction: -65°C ~ 150°C

Paket: SC-76, SOD-323

30BQ200TR

SMC Diode Solutions

DIODE SCHOTTKY 200V SMC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: 920mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 200V
• Capacitance @ Vr, F: 60pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: DO-214AB, SMC

STPS2H100ZF

STMicroelectronics

DIODE SCHOTTKY 100V 2A SOD123F

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 960mV @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F
• Operating Temperature - Junction: -40°C ~ 175°C

Paket: SOD-123F

SS30150HE_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 150V 3A SOD123HE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 860 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20 µA @ 150 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123H
• Supplier Device Package: SOD-123HE
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

ER2KBFL-TP

Micro Commercial Co

Interface

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 800 V
• Capacitance @ Vr, F: 12pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AA, SMB Flat Leads
• Supplier Device Package: SMBF
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

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SD0805S020L1R0

KYOCERA AVX

SCHOTTKY DIODES

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 380 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 mA @ 20 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Operating Temperature - Junction: -55°C ~ 125°C

Paket: -

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SFAS806GH

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 8A TO263AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

HS1KLW

Taiwan Semiconductor Corporation

75NS, 1A, 800V, HIGH EFFICIENT R

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 800 V
• Capacitance @ Vr, F: 7pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: -

PMEG2015EA-QX

Nexperia USA Inc.

PMEG2015EA-Q/SOD323/SOD2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20 V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1.5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 mA @ 15 V
• Capacitance @ Vr, F: 19pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323
• Operating Temperature - Junction: 125°C

Paket: -

SD24145

Microchip Technology

RECTIFIER

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-204AA, TO-3
• Supplier Device Package: TO-204AA (TO-3)
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: -

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1N4148WQ-13-F

Diodes Incorporated

DIODE GP 100V 300MA SOD123 10K

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 300mA
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 75 V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

NRVTS30100MFST3G

onsemi

DIODE SCHOTTKY 100V 30A 5DFN

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 760 mV @ 30 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 100 V
• Capacitance @ Vr, F: 2540pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN, 5 Leads
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: -

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BAV19WS_R1_00001

Panjit International Inc.

DIODE GEN PURP 100V 200MA SOD323

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 100 nA @ 100 V
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

MBRAD2045H

Taiwan Semiconductor Corporation

20A, 45V, SCHOTTKY RECTIFIER

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 45 V
• Capacitance @ Vr, F: 927pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: ThinDPAK
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

RHRU10050

Harris Corporation

DIODE GEN PURP 500V 100A TO218

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 500 V
• Current - Average Rectified (Io): 100A
• Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 100 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 60 ns
• Current - Reverse Leakage @ Vr: 500 µA @ 500 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: TO-218-1
• Supplier Device Package: TO-218
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: -

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GPA801-BP

Micro Commercial Co

DIODE GEN PURP 50V 8A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 50 V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -65°C ~ 150°C

Paket: -

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RB461FMT106

Rohm Semiconductor

DIODE SCHOTTKY 20V 700MA SOT323

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20 V
• Current - Average Rectified (Io): 700mA
• Voltage - Forward (Vf) (Max) @ If: 490 mV @ 700 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 20 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323
• Operating Temperature - Junction: 125°C

Paket: -