Bild |
Teilenummer |
Hersteller |
Beschreibung |
Paket |
Lager |
Anzahl |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
DIODE GEN PURP 400V 3A AXIAL
|
Paket: B, Axial |
Lager4.416 |
|
400V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 2µA @ 400V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
ON Semiconductor |
DIODE SCHOTTKY 10V 4A SMC
|
Paket: DO-214AB, SMC |
Lager30.000 |
|
10V | 4A | 500mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 10V | - | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 150°C |
||
Semtech Corporation |
DIODE GEN PURP 500V 10A MODULE
|
Paket: Module |
Lager6.512 |
|
500V | 10A | 1.6V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 500V | - | Chassis, Stud Mount | Module | - | -55°C ~ 150°C |
||
Fairchild/ON Semiconductor |
1200V SIC SBD 15A
|
Paket: TO-220-2 |
Lager5.184 |
|
1200V | 15A (DC) | 1.75V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 1200V | - | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 80V 8A TO263AB
|
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager6.144 |
|
80V | 8A | 720mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 550µA @ 80V | 500pF @ 5V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -55°C ~ 175°C |
||
TSC America Inc. |
DIODE, 3A, 800V, AEC-Q101, DO-20
|
Paket: DO-201AD, Axial |
Lager7.328 |
|
800V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | 25pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO220AA
|
Paket: DO-220AA |
Lager4.048 |
|
400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 400V | 9pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, 1A, 1000V, AEC-Q101, DO-2
|
Paket: DO-214AA, SMB |
Lager7.600 |
|
- | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, HIGH EFFICIENT, 1A, 100V,
|
Paket: T-18, Axial |
Lager6.224 |
|
100V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 15pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 2A 40V DO-214AC
|
Paket: DO-214AC, SMA |
Lager2.768 |
|
40V | 2A | 550mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | 130pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, SUPER FAST, 6A, 600V, 40N
|
Paket: TO-277, 3-PowerDFN |
Lager4.112 |
|
600V | 6A | 1.8V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 10µA @ 600V | 60pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
||
TSC America Inc. |
DIODE, SUPER FAST, 1A, 400V, 35N
|
Paket: SOD-123W |
Lager3.488 |
|
400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | 20pF @ 4V, 1MHz | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
||
Rohm Semiconductor |
DIODE SCHOTTKY 90V 1A PMDS
|
Paket: DO-214AC, SMA |
Lager480.828 |
|
90V | 1A | 730mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
||
Sanken |
DIODE SCHOTTKY 40V 3A SJP
|
Paket: 2-SMD, J-Lead |
Lager1.101.600 |
|
40V | 3A | 550mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 40V | - | Surface Mount | 2-SMD, J-Lead | 2-SMD | -40°C ~ 150°C |
||
Taiwan Semiconductor Corporation |
80NS, 8A, 1000V, HIGH EFFICIENT
|
Paket: - |
Lager3.000 |
|
1000 V | 8A | 1.7 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 10 µA @ 1 kV | 55pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
||
Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 120V 3A DO219AB
|
Paket: - |
Request a Quote |
|
120 V | 3A | 940 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 120 V | 220pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -40°C ~ 175°C |
||
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A DO214AC
|
Paket: - |
Lager45.000 |
|
200 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 200 V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
||
Microchip Technology |
DIODE SCHOTTKY 50V 1A DIE
|
Paket: - |
Request a Quote |
|
50 V | 1A | 600 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 50 V | - | Surface Mount | Die | Die | -55°C ~ 125°C |
||
Comchip Technology |
DIODE GEN PURP 200V 3A DO214AB
|
Paket: - |
Request a Quote |
|
200 V | 3A | 1 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 200 V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
||
onsemi |
DIODE SCHOTTKY 20V 2A 2DSN
|
Paket: - |
Request a Quote |
|
20 V | 2A | 490 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 150 µA @ 20 V | 140pF @ 0V, 1MHz | Surface Mount | 0603 (1608 Metric) | 2-DSN (1.6x0.8) | 150°C |
||
Comchip Technology |
DIODE GEN PURP 100V 6A R-6
|
Paket: - |
Request a Quote |
|
100 V | 6A | 1.3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 10 µA @ 100 V | 100pF @ 4V, 1MHz | Through Hole | R-6, Axial | R-6 | -55°C ~ 150°C |
||
Microchip Technology |
DIODE GEN PURP REV 400V 12A DO4
|
Paket: - |
Request a Quote |
|
400 V | 12A | 1.2 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 400 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 (DO-203AA) | -65°C ~ 200°C |
||
Surge |
DIODE SCHOTTKY 150V 1A DO214AC
|
Paket: - |
Request a Quote |
|
150 V | 1A | 850 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30 µA @ 150 V | 35pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
||
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 5A DO201AD
|
Paket: - |
Request a Quote |
|
20 V | 5A | 550 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 20 V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
||
Panjit International Inc. |
DIODE GEN PURP 800V 1A SMAF-C
|
Paket: - |
Lager9.000 |
|
800 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 800 V | 7pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | SMAF-C | -55°C ~ 150°C |
||
NTE Electronics, Inc |
DIODE SCHOTTKY 90V 1A DO41
|
Paket: - |
Request a Quote |
|
90 V | 1A | 790 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 90 V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
||
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 3A 40V DO-214AB
|
Paket: - |
Lager516 |
|
40 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 40 V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
||
Vishay General Semiconductor - Diodes Division |
DIODE SCHOTT 150V 1.9A SLIMSMAW
|
Paket: - |
Lager10.215 |
|
150 V | 1.9A | 760 mV @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 180 µA @ 150 V | 190pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | SlimSMAW (DO-221AD) | -40°C ~ 175°C |
||
Microchip Technology |
DIODE GEN PURP 200V 30A DO5
|
Paket: - |
Request a Quote |
|
200 V | 30A | 1.4 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | - | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 (DO-203AB) | -65°C ~ 150°C |
||
Microchip Technology |
DIODE GEN PURP 200V 12A DO203AA
|
Paket: - |
Request a Quote |
|
200 V | 12A | 1.5 V @ 38 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 10 µA @ 200 V | 115pF @ 10V, 1MHz | Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |