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Dioden - Gleichrichter - Einzeln

Aufzeichnungen 52.788
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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
EGP10G-M3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: DO-204AL, DO-41, Axial
Lager2.192
400V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 150°C
hot MA27D290GL
Panasonic Electronic Components

DIODE SCHOTTKY 30V 100MA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 420mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1ns
  • Current - Reverse Leakage @ Vr: 120µA @ 30V
  • Capacitance @ Vr, F: 9pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: SSSMini2-F3
  • Operating Temperature - Junction: 125°C (Max)
Paket: 2-SMD, Flat Lead
Lager1.228.008
30V
100mA
420mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
1ns
120µA @ 30V
9pF @ 0V, 1MHz
Surface Mount
2-SMD, Flat Lead
SSSMini2-F3
125°C (Max)
1N4934RL
ON Semiconductor

DIODE GEN PURP 100V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: DO-204AL, DO-41, Axial
Lager6.288
100V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
300ns
5µA @ 100V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
hot 8EWF06S
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager157.140
600V
8A
1.2V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
100µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
-40°C ~ 150°C
VS-SD500N45MSC
Vishay Semiconductor Diodes Division

MOD DIODE 560A 4500V B-PUK

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paket: -
Lager6.272
-
-
-
-
-
-
-
-
-
-
-
ISOPAC0223
Semtech Corporation

DIODE GEN PURP 500V 10A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 500V
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager6.704
500V
10A
1.6V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 500V
-
-
-
-
-55°C ~ 150°C
FR40JR02
GeneSiC Semiconductor

DIODE GEN PURP REV 600V 40A DO5

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 25µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -40°C ~ 125°C
Paket: DO-203AB, DO-5, Stud
Lager7.936
600V
40A
1V @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
25µA @ 100V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-40°C ~ 125°C
VBT5200-E3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 5A 200V TO-263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager2.256
200V
5A
1.6V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 200V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-40°C ~ 150°C
SBR5E60P5-7
Diodes Incorporated

DIODE SBR 60V 5A POWERDI5

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 220µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI? 5
  • Supplier Device Package: PowerDI?5
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: PowerDI? 5
Lager4.880
60V
5A
520mV @ 5A
Standard Recovery >500ns, > 200mA (Io)
-
220µA @ 60V
-
Surface Mount
PowerDI? 5
PowerDI?5
-55°C ~ 150°C
SK310B M4G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-214AA, SMB
Lager3.472
100V
3A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
CDBF00340-HF
Comchip Technology

DIODE SCHOTTKY 40V 30MA 1005

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 30mA
  • Voltage - Forward (Vf) (Max) @ If: 370mV @ 1mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 40V
  • Capacitance @ Vr, F: 1.5pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 1005 (2512 Metric)
  • Supplier Device Package: 1005/SOD-323F
  • Operating Temperature - Junction: 125°C (Max)
Paket: 1005 (2512 Metric)
Lager3.824
40V
30mA
370mV @ 1mA
Small Signal =< 200mA (Io), Any Speed
-
1µA @ 40V
1.5pF @ 1V, 1MHz
Surface Mount
1005 (2512 Metric)
1005/SOD-323F
125°C (Max)
SMMBD914LT3G
ON Semiconductor

DIODE GEN PURP 100V 200MA SOT23

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 5µA @ 75V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: TO-236-3, SC-59, SOT-23-3
Lager4.112
100V
200mA (DC)
1V @ 10mA
Small Signal =< 200mA (Io), Any Speed
4ns
5µA @ 75V
4pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
-55°C ~ 150°C
VS-85HFR80
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 85A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 85A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 9mA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -65°C ~ 180°C
Paket: DO-203AB, DO-5, Stud
Lager6.752
800V
85A
1.2V @ 267A
Standard Recovery >500ns, > 200mA (Io)
-
9mA @ 800V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB
-65°C ~ 180°C
STTH1512GY-TR
STMicroelectronics

DIODE GEN PURP 1.2KV 15A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 105ns
  • Current - Reverse Leakage @ Vr: 15µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -40°C ~ 175°C
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager12.456
1200V
15A
1.9V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
105ns
15µA @ 1200V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 175°C
hot MBR1645
SMC Diode Solutions

DIODE SCHOTTKY 45V 16A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 45V
  • Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: TO-220-2
Lager21.144
45V
16A
630mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 45V
1400pF @ 5V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
hot PDS760-13
Diodes Incorporated

DIODE SCHOTTKY 60V 7A POWERDI5

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 7A
  • Voltage - Forward (Vf) (Max) @ If: 620mV @ 7A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI? 5
  • Supplier Device Package: PowerDI? 5
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: PowerDI? 5
Lager1.307.040
60V
7A
620mV @ 7A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 60V
-
Surface Mount
PowerDI? 5
PowerDI? 5
-65°C ~ 150°C
hot MURS320-E3/57T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 875mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-214AB, SMC
Lager280.800
200V
3A
875mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-65°C ~ 175°C
RF505TF6SFHC9
Rohm Semiconductor

DIODE GEN PURP 600V 5A TO220NFM

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220NFM
  • Operating Temperature - Junction: 150°C (Max)
Paket: -
Lager2.781
600 V
5A
1.7 V @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
10 µA @ 600 V
-
Through Hole
TO-220-2 Full Pack
TO-220NFM
150°C (Max)
R20450
Microchip Technology

STD RECTIFIER

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
JAN1N6910UTK2CS-TR
Microchip Technology

DIODE SCHOTTKY 15V 25A THINKEY2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 15 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 520 mV @ 25 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.2 mA @ 15 V
  • Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: ThinKey™2
  • Supplier Device Package: ThinKey™2
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: -
Request a Quote
15 V
25A
520 mV @ 25 A
No Recovery Time > 500mA (Io)
-
1.2 mA @ 15 V
2000pF @ 5V, 1MHz
Surface Mount
ThinKey™2
ThinKey™2
-65°C ~ 150°C
S2MA
Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 1.5A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager18.981
1000 V
1.5A
1.1 V @ 1.5 A
Standard Recovery >500ns, > 200mA (Io)
1.5 µs
5 µA @ 1000 V
30pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
E3D08065G
Wolfspeed, Inc.

DIODE SIL CARB 650V 22A TO263-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 22A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 51 µA @ 650 V
  • Capacitance @ Vr, F: 369pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
Request a Quote
650 V
22A
1.8 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
51 µA @ 650 V
369pF @ 0V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-2
-55°C ~ 175°C
S4260
Microchip Technology

DIODE GEN PURP 600V 125A DO205AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 125A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -65°C ~ 200°C
Paket: -
Request a Quote
600 V
125A
1.2 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 600 V
-
Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-65°C ~ 200°C
PCDD0665G1_L2_00001
Panjit International Inc.

DIODE SIL CARB 650V 6A TO252AA

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 650 V
  • Capacitance @ Vr, F: 228pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
Lager8.988
650 V
6A
1.7 V @ 6 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 650 V
228pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
CGRC305-HF
Comchip Technology

DIODE GEN PURP 600V 3A DO214AB S

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: 150°C
Paket: -
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600 V
3A
1.1 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 600 V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
150°C
R3680
Microchip Technology

DIODE GEN PURP 800V 70A DO5

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5 µs
  • Current - Reverse Leakage @ Vr: 25 µA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5 (DO-203AB)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
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800 V
70A
1.25 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
5 µs
25 µA @ 800 V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5 (DO-203AB)
-55°C ~ 175°C
SK35AH
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 50V 3A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
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50 V
3A
720 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 50 V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
HS2DA
Good-Ark Semiconductor

RECTIFIER, ULTRA-FAST/HIGH EFFIC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager44.982
200 V
1.5A
1 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 200 V
50pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C