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Dioden - Gleichrichter - Einzeln

Aufzeichnungen 52.788
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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
RL101-N-0-1-BP
Micro Commercial Co

DIODE GEN PURP 50V 1A A-405

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: Axial, Radial Bend
  • Supplier Device Package: A-405
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: Axial, Radial Bend
Lager5.120
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 50V
15pF @ 4V, 1MHz
Through Hole
Axial, Radial Bend
A-405
-55°C ~ 150°C
MBR16H45HE3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 16A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 660mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: TO-220-2
Lager3.392
45V
16A
660mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 45V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
RA202820XX
Powerex Inc.

DIODE MODULE 2.8KV 2000A PWRDISC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2800V
  • Current - Average Rectified (Io): 2000A
  • Voltage - Forward (Vf) (Max) @ If: 1.45V @ 3000A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25µs
  • Current - Reverse Leakage @ Vr: 200mA @ 2800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AD
  • Supplier Device Package: Pow-R-Disc
  • Operating Temperature - Junction: -
Paket: DO-200AD
Lager4.560
2800V
2000A
1.45V @ 3000A
Standard Recovery >500ns, > 200mA (Io)
25µs
200mA @ 2800V
-
Chassis Mount
DO-200AD
Pow-R-Disc
-
1N6078
Semtech Corporation

D MET 3A SFST 150V

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paket: -
Lager7.888
-
-
-
-
-
-
-
-
-
-
-
FR16GR02
GeneSiC Semiconductor

DIODE GEN PURP REV 400V 16A DO4

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 25µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: DO-203AA, DO-4, Stud
Lager3.168
400V
16A
1.1V @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
25µA @ 100V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 150°C
HSM550G/TR13
Microsemi Corporation

DIODE SCHOTTKY 50V 5A DO215AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AB, SMC Gull Wing
  • Supplier Device Package: DO-215AB
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: DO-215AB, SMC Gull Wing
Lager5.392
50V
5A
650mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
250µA @ 50V
-
Surface Mount
DO-215AB, SMC Gull Wing
DO-215AB
-55°C ~ 175°C
UFS370JE3/TR13
Microsemi Corporation

DIODE GEN PURP 700V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 700V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 10µA @ 700V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: DO-214AB, SMC
Lager4.304
700V
3A
1.2V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
10µA @ 700V
-
Surface Mount
DO-214AB, SMC
DO-214AB
-55°C ~ 175°C
MBRS3100PT3G
ON Semiconductor

DIODE SCHOTTKY 100V 3A SMC-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-214AB, SMC
Lager7.616
100V
3A
790mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 100V
-
Surface Mount
DO-214AB, SMC
SMC
-65°C ~ 175°C
31GF4-M3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 20µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: DO-201AD, Axial
Lager4.832
400V
3A
1.25V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
20µA @ 400V
-
Through Hole
DO-201AD, Axial
DO-201AD
-40°C ~ 150°C
S5AHE3_A/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 5A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5µs
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-214AB, SMC
Lager7.472
50V
5A
1.15V @ 5A
Standard Recovery >500ns, > 200mA (Io)
2.5µs
10µA @ 50V
40pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
S3M R7G
TSC America Inc.

DIODE, 3A, 1000V, DO-214AB (SMC)

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-214AB, SMC
Lager3.392
1000V
3A
1.15V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 1000V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
CDBC380-G
Comchip Technology

DIODE SCHOTTKY 80V 3A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 80V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: 125°C (Max)
Paket: DO-214AB, SMC
Lager3.392
80V
3A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 80V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
125°C (Max)
hot VS-20L15TSPBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 15V 20A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 15V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 410mV @ 19A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10mA @ 15V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 125°C
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager46.800
15V
20A
410mV @ 19A
Fast Recovery =< 500ns, > 200mA (Io)
-
10mA @ 15V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 125°C
S2J-LTP
Micro Commercial Co

DIODE GEN PURP 600V 2A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-214AA, SMB
Lager2.912
600V
2A
1.15V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
5µA @ 600V
20pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
RBE1VAM20ATR
Rohm Semiconductor

DIODE SCHOTTKY 20V 1A TUMD2M

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: TUMD2M
  • Operating Temperature - Junction: 125°C (Max)
Paket: 2-SMD, Flat Lead
Lager4.416
20V
1A
530mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 20V
-
Surface Mount
2-SMD, Flat Lead
TUMD2M
125°C (Max)
IDH20G120C5XKSA1
Infineon Technologies

DIODE SCHOTTKY 1.2KV 56A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 56A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 123µA @ 1200V
  • Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2-1
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-220-2
Lager16.368
1200V
56A (DC)
1.8V @ 20A
No Recovery Time > 500mA (Io)
0ns
123µA @ 1200V
1050pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
FR307
SMC Diode Solutions

DIODE GEN PURP 1KV 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: -
Request a Quote
1000 V
3A
1.3 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
500 ns
5 µA @ 1000 V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
CGRB305-G
Comchip Technology

DIODE GEN PURP 600V 3A DO214AA S

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Request a Quote
600 V
3A
1.15 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 600 V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SK54-AQ
Diotec Semiconductor

IC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -50°C ~ 150°C
Paket: -
Request a Quote
40 V
5A
550 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 40 V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-50°C ~ 150°C
JANTX1N6872UTK2CS-TR
Microchip Technology

POWER SCHOTTKY

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
VS-5EAH02HM3-I
Vishay General Semiconductor - Diodes Division

5A, 200V, FRED HYPERFAST RECTIFI

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 4 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 2-VDFN
  • Supplier Device Package: DFN3820A
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
Lager41.700
200 V
5A
970 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
4 µA @ 200 V
-
Surface Mount, Wettable Flank
2-VDFN
DFN3820A
-55°C ~ 175°C
CTLSH15-30M364-TR13-PBFREE
Central Semiconductor Corp

DIODE SCHOTTKY 30V 15A TLM364

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 30 V
  • Capacitance @ Vr, F: 920pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Lead
  • Supplier Device Package: TLM364
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager14.175
30 V
15A
560 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 30 V
920pF @ 4V, 1MHz
Surface Mount
3-SMD, Flat Lead
TLM364
-55°C ~ 150°C
FSU10D60
KYOCERA AVX

DIODE GP 600V 10A TO220 FM

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45 ns
  • Current - Reverse Leakage @ Vr: 30 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220-2 Full-Mold
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
Request a Quote
600 V
10A
2.3 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
45 ns
30 µA @ 600 V
-
Through Hole
TO-220-2 Full Pack
TO-220-2 Full-Mold
-55°C ~ 175°C
1N5807URS
Microchip Technology

DIODE GEN PURP 50V 3A SQ-MELF B

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 60pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: B, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: -
Request a Quote
50 V
3A
875 mV @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
5 µA @ 50 V
60pF @ 10V, 1MHz
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 175°C
SS310LW
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 3A SOD123W

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager102.840
100 V
3A
850 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
20 µA @ 100 V
-
Surface Mount
SOD-123W
SOD-123W
-55°C ~ 150°C
JANTX1N6873UTK2AS-TR
Microchip Technology

POWER SCHOTTKY

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paket: -
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BYM12-300HE3_A-H
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 300V 1A DO213AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 300 V
  • Capacitance @ Vr, F: 14pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: -
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300 V
1A
1.25 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 300 V
14pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
MSC050SDA070S
Microchip Technology

DIODE SIL CARBIDE 700V 88A D3PAK

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 700 V
  • Current - Average Rectified (Io): 88A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 200 µA @ 700 V
  • Capacitance @ Vr, F: 2034pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: D3PAK
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
Lager69
700 V
88A
1.8 V @ 50 A
No Recovery Time > 500mA (Io)
0 ns
200 µA @ 700 V
2034pF @ 1V, 1MHz
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
D3PAK
-55°C ~ 175°C