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Dioden - Gleichrichter - Einzeln

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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
MBRB735-E3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 7.5A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 7.5A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 35V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager3.312
35V
7.5A
840mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 35V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-65°C ~ 150°C
SS1H10HE3/61T
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 1A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 770mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: 175°C (Max)
Paket: DO-214AC, SMA
Lager4.704
100V
1A
770mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 100V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
175°C (Max)
VS-40APS16PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.6KV 40A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.14V @ 40A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: TO-247-3
Lager6.016
1600V
40A
1.14V @ 40A
Standard Recovery >500ns, > 200mA (Io)
-
100µA @ 1600V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
SRA2040 C0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 20A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 125°C
Paket: TO-220-2
Lager4.448
40V
20A
550mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 125°C
SRAF1650HC0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 16A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: TO-220-2 Full Pack
Lager5.008
50V
16A
700mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
ESH2CA M2G
TSC America Inc.

DIODE, ULTRA FAST, 1A, 150V, 25N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: DO-214AC, SMA
Lager4.880
150V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 200V
25pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 175°C
RS1MFA
Fairchild/ON Semiconductor

DIODE GP 1KV 800MA SOD123FA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123FA
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: SOD-123W
Lager6.544
1000V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
10pF @ 4V, 1MHz
Surface Mount
SOD-123W
SOD-123FA
-55°C ~ 150°C
RF301BM2STL
Rohm Semiconductor

DIODE GEN PURP 200V 3A TO252

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 930mV @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
  • Operating Temperature - Junction: 150°C (Max)
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager2.624
200V
3A
930mV @ 3A
Standard Recovery >500ns, > 200mA (Io)
25ns
10µA @ 200V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
150°C (Max)
hot STTH806DTI
STMicroelectronics

DIODE GEN PURP 600V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 3.6V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Insulated, TO-220AC
  • Supplier Device Package: TO-220AC ins
  • Operating Temperature - Junction: 175°C (Max)
Paket: TO-220-2 Insulated, TO-220AC
Lager37.080
600V
8A
3.6V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
10µA @ 600V
-
Through Hole
TO-220-2 Insulated, TO-220AC
TO-220AC ins
175°C (Max)
VS-MBRB1645PBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 16A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager29.268
45V
16A
630mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 45V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-65°C ~ 150°C
VS-MBR1045PBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 10A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 45V
  • Capacitance @ Vr, F: 600pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: TO-220-2
Lager122.784
45V
10A
570mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 45V
600pF @ 5V, 1MHz
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
hot MBRB1045T4G
ON Semiconductor

DIODE SCHOTTKY 45V 10A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager136.848
45V
10A
840mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 45V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-65°C ~ 175°C
1N2135
Solid State Inc.

DIODE GEN PURP 400V 70A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 200°C
Paket: -
Request a Quote
400 V
70A
1.25 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
25 µA @ 400 V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 200°C
1N2055R
Solid State Inc.

DIODE GEN PURP REV 100V 275A DO9

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 275A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 75 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-9
  • Operating Temperature - Junction: -65°C ~ 190°C
Paket: -
Request a Quote
100 V
275A
1.3 V @ 300 A
Standard Recovery >500ns, > 200mA (Io)
-
75 µA @ 100 V
-
Stud Mount
DO-205AB, DO-9, Stud
DO-9
-65°C ~ 190°C
V5NM103HM3-I
Vishay General Semiconductor - Diodes Division

5A, 100V, DFN3820A TRENCH SKY RE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2.1A
  • Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 140 µA @ 100 V
  • Capacitance @ Vr, F: 580pF @ 4V, 1MHz
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 2-VDFN
  • Supplier Device Package: DFN3820A
  • Operating Temperature - Junction: -40°C ~ 175°C
Paket: -
Lager41.820
100 V
2.1A
720 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
140 µA @ 100 V
580pF @ 4V, 1MHz
Surface Mount, Wettable Flank
2-VDFN
DFN3820A
-40°C ~ 175°C
SBM36VAFC_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 60V 3A SMAF-C

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 220 µA @ 60 V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAF-C
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager32.850
60 V
3A
500 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
220 µA @ 60 V
200pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
SMAF-C
-55°C ~ 150°C
SD2010S030L3R0
KYOCERA AVX

SCHOTTKY DIODES

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 440 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 nA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 1206 (3216 Metric)
  • Supplier Device Package: 1206
  • Operating Temperature - Junction: -55°C ~ 125°C
Paket: -
Request a Quote
30 V
3A
440 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 nA @ 30 V
-
Surface Mount
1206 (3216 Metric)
1206
-55°C ~ 125°C
SS34HT-TP
Micro Commercial Co

DIODE SCHOTTKY 40V 3A SOD123HT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 40 V
  • Capacitance @ Vr, F: 160pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123T
  • Supplier Device Package: SOD-123HT
  • Operating Temperature - Junction: -55°C ~ 125°C
Paket: -
Request a Quote
40 V
3A
550 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 40 V
160pF @ 4V, 1MHz
Surface Mount
SOD-123T
SOD-123HT
-55°C ~ 125°C
FR106B-G
Comchip Technology

DIODE GEN PURP 800V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Request a Quote
800 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
500 ns
5 µA @ 800 V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 150°C
VS-3C06ET07T-M3
Vishay General Semiconductor - Diodes Division

650 V POWER SIC GEN 3 MERGED PIN

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 35 µA @ 650 V
  • Capacitance @ Vr, F: 255pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
Lager10.110
650 V
6A
1.5 V @ 6 A
No Recovery Time > 500mA (Io)
0 ns
35 µA @ 650 V
255pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
SE40PWBC-M3-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 2A SLIMDPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: 14pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: SlimDPAK
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
Request a Quote
100 V
2A
1.1 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
1.5 µs
10 µA @ 100 V
14pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
SlimDPAK
-55°C ~ 175°C
STPST3H100AF
STMicroelectronics

100 V, 3 A POWER SCHOTTKY TRENCH

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 755 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5.7 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD128Flat
  • Operating Temperature - Junction: 175°C
Paket: -
Lager18.000
100 V
3A
755 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
5.7 µA @ 100 V
-
Surface Mount
SOD-128
SOD128Flat
175°C
NRVUS2BA
onsemi

DIODE GEN PURP 100V 1.5A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Request a Quote
100 V
1.5A
1 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 100 V
50pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
FR304GP-AP
Micro Commercial Co

DIODE GEN PURP 400V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Request a Quote
400 V
3A
1.3 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
5 µA @ 400 V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N3617R
Solid State Inc.

DIODE GEN PURP 150V 16A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2.25 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 200°C
Paket: -
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150 V
16A
1.2 V @ 50 A
Standard Recovery >500ns, > 200mA (Io)
-
2.25 µA @ 150 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 200°C
MMBD132V48-TP
Micro Commercial Co

GENERAL PURPOSE DIODE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 75 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
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100 V
150mA
1.25 V @ 150 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
1 µA @ 75 V
2pF @ 0V, 1MHz
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
-55°C ~ 150°C
ES8CC-HF
Comchip Technology

DIODE GEN PURP 150V 8A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 980 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 150 V
  • Capacitance @ Vr, F: 90pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
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150 V
8A
980 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 150 V
90pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SF25GH
Taiwan Semiconductor Corporation

DIODE GEN PURP 300V 2A DO204AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 300 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager10.500
300 V
2A
1.3 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 300 V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
JANS1N5620-TR
Microchip Technology

DIODE GEN PURP 800V 1A A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: A, Axial
  • Operating Temperature - Junction: -65°C ~ 200°C
Paket: -
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800 V
1A
1.6 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 400 V
-
Through Hole
A, Axial
A, Axial
-65°C ~ 200°C
SRAF5150H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 150V 5A ITO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
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150 V
5A
950 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 150 V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C