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Dioden - Gleichrichter - Einzeln

Aufzeichnungen 52.788
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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
hot RD0504T-P-TL-H
ON Semiconductor

DIODE GEN PURP 400V 5A TPFA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 17ns
  • Current - Reverse Leakage @ Vr: 20µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TP-FA
  • Operating Temperature - Junction: -
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager16.800
400V
5A
1.5V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
17ns
20µA @ 400V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TP-FA
-
JAN1N6626
Microsemi Corporation

DIODE GEN PURP 220V 1.75A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 220V
  • Current - Average Rectified (Io): 1.75A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 1.2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 2µA @ 220V
  • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: E, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: E, Axial
Lager3.760
220V
1.75A
1.35V @ 1.2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 220V
40pF @ 10V, 1MHz
Through Hole
E, Axial
-
-65°C ~ 150°C
UH1BHE3/61T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 1µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: DO-214AC, SMA
Lager3.312
100V
1A
1.05V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1µA @ 100V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 175°C
UF2001-T
Diodes Incorporated

DIODE GEN PURP 50V 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: DO-204AC, DO-15, Axial
Lager3.344
50V
2A
1V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
50pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-65°C ~ 150°C
hot MA21D3400L
Panasonic Electronic Components

DIODE SCHOTTKY 30V 1A SMINI2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 380mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 14ns
  • Current - Reverse Leakage @ Vr: 1.2mA @ 30V
  • Capacitance @ Vr, F: 45pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: Smini2-F2
  • Operating Temperature - Junction: 150°C (Max)
Paket: 2-SMD, Flat Lead
Lager115.584
30V
1A
380mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
14ns
1.2mA @ 30V
45pF @ 10V, 1MHz
Surface Mount
2-SMD, Flat Lead
Smini2-F2
150°C (Max)
1N4052
Powerex Inc.

DIODE GEN PURP 600V 275A DO205AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 275A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 12mA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -65°C ~ 190°C
Paket: DO-205AB, DO-9, Stud
Lager4.400
600V
275A
-
Standard Recovery >500ns, > 200mA (Io)
-
12mA @ 600V
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-65°C ~ 190°C
1N3213
GeneSiC Semiconductor

DIODE GEN PURP 500V 15A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-203AB, DO-5, Stud
Lager4.848
500V
15A
1.5V @ 15A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 50V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 175°C
VS-10TQ035STRR-M3
Vishay Semiconductor Diodes Division

DIODE RECT 35V 10A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 35V
  • Capacitance @ Vr, F: 900pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -50°C ~ 175°C
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager7.920
35V
10A
570mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 35V
900pF @ 5V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-50°C ~ 175°C
UG54G A0G
TSC America Inc.

DIODE, ULTRA FAST, 5A, 200V, 20N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: DO-201AD, Axial
Lager4.832
200V
5A
1.05V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
10µA @ 200V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 175°C
GP30B-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-201AD, Axial
Lager3.312
100V
3A
1.2V @ 3A
Standard Recovery >500ns, > 200mA (Io)
5µs
5µA @ 100V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
hot SB240-E3/73
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 2A DO204AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -65°C ~ 125°C
Paket: DO-204AC, DO-15, Axial
Lager880.680
40V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-65°C ~ 125°C
HER103G A0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 200V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-204AL, DO-41, Axial
Lager5.840
200V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
LL42-GS18
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 200MA SOD80

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 50mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 500nA @ 25V
  • Capacitance @ Vr, F: 7pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: SOD-80 MiniMELF
  • Operating Temperature - Junction: 125°C (Max)
Paket: DO-213AC, MINI-MELF, SOD-80
Lager4.544
30V
200mA
650mV @ 50mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
7pF @ 1V, 1MHz
Surface Mount
DO-213AC, MINI-MELF, SOD-80
SOD-80 MiniMELF
125°C (Max)
2A01G A0G
TSC America Inc.

DIODE, 2A, 50V, DO-15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-204AC, DO-15, Axial
Lager3.392
50V
2A
1.1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 50V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1PS76SB10Z
Nexperia USA Inc.

1PS76SB10/SOD323/SOD2

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paket: -
Lager4.896
-
-
-
-
-
-
-
-
-
-
-
hot MBRD5H100T4G
ON Semiconductor

DIODE SCHOTTKY 100V 5A DPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 710mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3.5µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager30.000
100V
5A
710mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
3.5µA @ 100V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
-65°C ~ 175°C
SJPE-H4VR
Sanken

DIODE SCHOTTKY 40V 2A SJP

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, J-Lead
  • Supplier Device Package: 2-SMD
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: 2-SMD, J-Lead
Lager6.000
40V
2A
600mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 40V
-
Surface Mount
2-SMD, J-Lead
2-SMD
-40°C ~ 150°C
B2100AF-13
Diodes Incorporated

DIODE SCHOTTKY 100V 2A SMAFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 790mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA Flat Leads
  • Supplier Device Package: SMAflat
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-214AC, SMA Flat Leads
Lager2.496
100V
2A
790mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 100V
-
Surface Mount
DO-214AC, SMA Flat Leads
SMAflat
-55°C ~ 150°C
hot SB05-05C-TB-E
ON Semiconductor

DIODE SCHOTTKY 50V 500MA 3CP

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10ns
  • Current - Reverse Leakage @ Vr: 50µA @ 25V
  • Capacitance @ Vr, F: 17pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-CP
  • Operating Temperature - Junction: -55°C ~ 125°C
Paket: TO-236-3, SC-59, SOT-23-3
Lager737.904
50V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
10ns
50µA @ 25V
17pF @ 10V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-CP
-55°C ~ 125°C
20FR100
Solid State Inc.

DIODE GEN PURP REV 1KV 20A DO4

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: -
Request a Quote
1000 V
20A
1.2 V @ 20 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1000 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 150°C
JANTXV1N6672
Microchip Technology

DIODE GEN PURP 300V 15A TO254

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 240 V
  • Capacitance @ Vr, F: 150pF @ 10V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA
  • Supplier Device Package: TO-254
  • Operating Temperature - Junction: -
Paket: -
Request a Quote
300 V
15A
1.55 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
50 µA @ 240 V
150pF @ 10V, 1MHz
Through Hole
TO-254-3, TO-254AA
TO-254
-
VS-80-7649
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
JANS1N5812R
Microchip Technology

DIODE GEN PURP 50V 20A DO203AA

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Capacitance @ Vr, F: 300pF @ 10V, 1MHz
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA (DO-4)
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: -
Request a Quote
50 V
20A
950 mV @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 50 V
300pF @ 10V, 1MHz
Stud Mount
DO-203AA, DO-4, Stud
DO-203AA (DO-4)
-65°C ~ 175°C
HSM2836C-JTR-E
Renesas Electronics Corporation

DIODE FOR HIGH SPEED SWITCHING

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
PMEG60T20ELR-QX
Nexperia USA Inc.

DIODE SCHOTTKY 60V 2A SOD123W

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 12 ns
  • Current - Reverse Leakage @ Vr: 1.2 µA @ 60 V
  • Capacitance @ Vr, F: 370pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: 175°C
Paket: -
Lager16.959
60 V
2A
620 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
12 ns
1.2 µA @ 60 V
370pF @ 1V, 1MHz
Surface Mount
SOD-123W
SOD-123W
175°C
1N1200BR
Microchip Technology

STANDARD RECTIFIER

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4 (DO-203AA)
  • Operating Temperature - Junction: -65°C ~ 200°C
Paket: -
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100 V
12A
1.2 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 100 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4 (DO-203AA)
-65°C ~ 200°C
SR5150-TP
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2 mA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -50°C ~ 150°C
Paket: -
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150 V
5A
920 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
2 mA @ 150 V
-
Through Hole
DO-201AD, Axial
DO-201AD
-50°C ~ 150°C
SR3200-AP
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -50°C ~ 125°C
Paket: -
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200 V
3A
900 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 200 V
-
Through Hole
DO-201AD, Axial
DO-201AD
-50°C ~ 125°C