Page 20 - Transistoren - Bipolar (BJT) - Arrays | Diskrete Halbleiterprodukte

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2N5796	Central Semiconductor Corp	TRANS 2PNP 600MA 60V TO78-6 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 600mW Frequency - Transition: 200MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	Paket: TO-78-6 Metal Can	Lager5.888	600mA	60V	-	-	100 @ 150mA, 10V	600mW	200MHz	-	Through Hole	TO-78-6 Metal Can	TO-78-6
2N2721	Central Semiconductor Corp	TRANS NPN DUAL TO78 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	Paket: TO-78-6 Metal Can	Lager7.136	-	-	-	-	-	-	-	-	Through Hole	TO-78-6 Metal Can	TO-78-6
HN1B04F(TE85L,F)	Toshiba Semiconductor and Storage	TRANS NPN/PNP 30V 0.5A SM6 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Power - Max: 300mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	Paket: SC-74, SOT-457	Lager5.232	500mA	30V	250mV @ 10mA, 100mA	100nA (ICBO)	70 @ 100mA, 1V	300mW	200MHz	150°C (TJ)	Surface Mount	SC-74, SOT-457	SM6
SSM2220PZ	Analog Devices Inc.	TRANS 2PNP 36V 0.02A 8DIP Transistor Type: 2 PNP (Dual) Matched Pair Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 36V Vce Saturation (Max) @ Ib, Ic: 100mV @ 100µA, 1mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: 190MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	Paket: 8-DIP (0.300", 7.62mm)	Lager15.132	20mA	36V	100mV @ 100µA, 1mA	-	-	-	190MHz	-65°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
XP0C30100L	Panasonic Electronic Components	TRANS NPN/PNP DARL 50V SMINI5 Transistor Type: NPN, PNP Complementary Darlington Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V Power - Max: 150mW Frequency - Transition: 150MHz, 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: SMini5-G1	Paket: 5-TSSOP, SC-70-5, SOT-353	Lager4.320	100mA	50V	300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA	100µA	160 @ 2mA, 10V	150mW	150MHz, 80MHz	150°C (TJ)	Surface Mount	5-TSSOP, SC-70-5, SOT-353	SMini5-G1
XN0440100L	Panasonic Electronic Components	TRANS 2PNP 50V 0.1A MINI6 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V Power - Max: 300mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: MINI6-G1	Paket: SOT-23-6	Lager2.464	100mA	50V	500mV @ 10mA, 100mA	100µA	160 @ 2mA, 10V	300mW	80MHz	150°C (TJ)	Surface Mount	SOT-23-6	MINI6-G1
SLA4060	Sanken	TRANS 4NPN DARL 120V 5A 12SIP Transistor Type: 4 NPN Darlington (Quad) Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V Power - Max: 5W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 12-SIP, Exposed Tab Supplier Device Package: 12-SIP	Paket: 12-SIP, Exposed Tab	Lager3.136	5A	120V	1.5V @ 3mA, 3A	10µA (ICBO)	2000 @ 3A, 2V	5W	-	150°C (TJ)	Through Hole	12-SIP, Exposed Tab	12-SIP
ULN2803AFWG,C,EL	Toshiba Semiconductor and Storage	TRANS 8NPN DARL 50V 0.5A 18SOL Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: 1.31W Frequency - Transition: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 18-SOIC (0.295", 7.50mm Width) Supplier Device Package: 18-SOL	Paket: 18-SOIC (0.295", 7.50mm Width)	Lager4.608	500mA	50V	1.6V @ 500µA, 350mA	-	1000 @ 350mA, 2V	1.31W	-	-40°C ~ 85°C (TA)	Surface Mount	18-SOIC (0.295", 7.50mm Width)	18-SOL
NSV60100DMTWTBG	ON Semiconductor	DUAL TRANSISTOR PNP Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Power - Max: 2.27W Frequency - Transition: 155MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2)	Paket: 6-WDFN Exposed Pad	Lager6.224	1A	60V	300mV @ 100mA, 2A	100nA (ICBO)	120 @ 500mA, 2V	2.27W	155MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-WDFN (2x2)
UMZ8NTR	Rohm Semiconductor	TRANS NPN/PNP 50V/12V UMT6 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 12V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V / 270 @ 10mA, 2V Power - Max: 150mW Frequency - Transition: 180MHz, 260MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	Paket: 6-TSSOP, SC-88, SOT-363	Lager4.816	150mA, 500mA	50V, 12V	400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA	100nA (ICBO)	120 @ 1mA, 6V / 270 @ 10mA, 2V	150mW	180MHz, 260MHz	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
PBSS5260PAPSX	Nexperia USA Inc.	TRANS 2PNP 60V 2A 6HUSON Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1A, 2V Power - Max: 370mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020D-6	Paket: 6-UDFN Exposed Pad	Lager4.016	2A	60V	500mV @ 200mA, 2A	100nA (ICBO)	110 @ 1A, 2V	370mW	100MHz	150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	DFN2020D-6
NP0A45600A	Panasonic Electronic Components	TRANS 2PNP 15V 0.05A SSSMINI6 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V Power - Max: 125mW Frequency - Transition: 1.5GHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SSSMini6-F1	Paket: SOT-963	Lager3.984	50mA	15V	200mV @ 1mA, 10mA	100nA (ICBO)	50 @ 10mA, 1V	125mW	1.5GHz	125°C (TJ)	Surface Mount	SOT-963	SSSMini6-F1
DSS4160FDB-7	Diodes Incorporated	TRANS NPH U-DFN2020-6 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V Power - Max: 405mW Frequency - Transition: 175MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	Paket: 6-UDFN Exposed Pad	Lager2.592	1A	60V	240mV @ 50mA, 1A	100nA (ICBO)	150 @ 500mA, 2V	405mW	175MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
2SC4207-GR(TE85L,F	Toshiba Semiconductor and Storage	TRANS 2NPN 50V 0.15A SMV Transistor Type: 2 NPN (Dual) Common Emitter Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	Paket: SC-74A, SOT-753	Lager6.384	150mA	50V	250mV @ 10mA, 100mA	100nA (ICBO)	200 @ 2mA, 6V	300mW	80MHz	125°C (TJ)	Surface Mount	SC-74A, SOT-753	SMV
PBSS2515VPN,115	Nexperia USA Inc.	TRANS NPN/PNP 15V 0.5A SOT666 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V Power - Max: 300mW Frequency - Transition: 420MHz, 280MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	Paket: SOT-563, SOT-666	Lager116.100	500mA	15V	250mV @ 50mA, 500mA	100nA (ICBO)	150 @ 100mA, 2V	300mW	420MHz, 280MHz	150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-666
BC847SH6327XTSA1	Infineon Technologies	TRANS 2NPN 45V 0.1A SOT363 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	Paket: 6-VSSOP, SC-88, SOT-363	Lager144.912	100mA	45V	600mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	250mW	250MHz	150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
MPQ6700	Central Semiconductor Corp	TRANS 2NPN/2PNP 40V 0.2A Transistor Type: 2 NPN, 2 PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V Power - Max: 500mW Frequency - Transition: 200MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: TO-116	Paket: 14-DIP (0.300", 7.62mm)	Lager7.932	200mA	40V	250mV @ 1mA, 10mA	50nA (ICBO)	70 @ 10mA, 1V	500mW	200MHz	-65°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	TO-116
FFB2222A	Fairchild/ON Semiconductor	TRANS 2NPN 40V 0.5A SC70-6 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 300mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	Paket: 6-TSSOP, SC-88, SOT-363	Lager92.400	500mA	40V	1V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	300mW	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
MBT3946DW1T1G	ON Semiconductor	TRANS NPN/PNP 40V 0.2A SC88 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 150mW Frequency - Transition: 300MHz, 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	Paket: 6-TSSOP, SC-88, SOT-363	Lager6.451.608	200mA	40V	300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA	-	100 @ 10mA, 1V	150mW	300MHz, 250MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
HN1C03FU-B-LF	Toshiba Semiconductor and Storage	NPN + NPN IND. TRANSISTOR VCEO20 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V Power - Max: 200mW Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	Paket: -	Lager16.884	300mA	20V	100mV @ 3mA, 30A	100nA (ICBO)	350 @ 4mA, 2V	200mW	30MHz	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
BC846BPN-AU_R1_000A1	Panjit International Inc.	SOT-363, TRANSISTOR Transistor Type: 1 NPN, 1 PNP Complementary Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V / 220 @ 2mA, 5V Power - Max: 225mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Paket: -	Lager4.962	100mA	65V	600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V / 220 @ 2mA, 5V	225mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
2N2920U-TR	Microchip Technology	TRANSISTOR DUAL SMALL-SIGNAL BJT Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: 6-SMD	Paket: -	Request a Quote	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	300 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Surface Mount	6-SMD, No Lead	6-SMD
NJVMJK32CTWG	onsemi	POWER TRANSISTOR 100 V, 3 A DUAL Transistor Type: - Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V Power - Max: 2.7W Frequency - Transition: 3MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Supplier Device Package: LFPAK4 (5x6)	Paket: -	Lager8.940	3A	100V	1.2V @ 375mA, 3A	50µA	25 @ 1A, 4V	2.7W	3MHz	-65°C ~ 150°C (TJ)	Surface Mount	SOT-1023, 4-LFPAK	LFPAK4 (5x6)
MMDT3906TB6_R1_00001	Panjit International Inc.	DUAL PNP GENERAL PURPOSE SWITCHI Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 200mW Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Paket: -	Lager20.550	200mA	40V	400mV @ 5mA, 50mA	50nA	100 @ 10mA, 1V	200mW	250MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
MPQ7053-TIN-LEAD	Central Semiconductor Corp	TRANS 2NPN/2PNP 250V 0.5A Transistor Type: 2 NPN, 2 PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 250V Vce Saturation (Max) @ Ib, Ic: 700mV @ 2mA, 20mA Current - Collector Cutoff (Max): 250nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V Power - Max: 750mW Frequency - Transition: 50MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: TO-116	Paket: -	Request a Quote	500mA	250V	700mV @ 2mA, 20mA	250nA (ICBO)	25 @ 30mA, 10V	750mW	50MHz	-65°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	TO-116
JAN2N6987U-TR	Microchip Technology	TRANSISTOR QUAD SMALL-SIGNAL BJT Transistor Type: 4 PNP (Quad) Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: 6-SMD	Paket: -	Request a Quote	600mA	60V	1.6V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	1W	-	-65°C ~ 200°C (TJ)	Surface Mount	6-SMD, No Lead	6-SMD
BC847BVNQ-7	Diodes Incorporated	GENERAL PURPOSE TRANSISTOR SOT56 Transistor Type: 1 NPN, 1 PNP Complementary Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 150mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Paket: -	Lager9.000	100mA	45V	600mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	150mW	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
LS351-SOT-23-6L	Linear Integrated Systems, Inc.	TIGHTLY MATCHED, MONOLITHIC DUAL Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 10mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100µA, 1mA Current - Collector Cutoff (Max): 200pA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 500mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	Paket: -	Request a Quote	10mA	45V	500mV @ 100µA, 1mA	200pA (ICBO)	150 @ 1mA, 5V	500mW	200MHz	150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6

2N5796

Central Semiconductor Corp

TRANS 2PNP 600MA 60V TO78-6

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 600mW
Frequency - Transition: 200MHz
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

Paket: TO-78-6 Metal Can

Lager5.888

600mA

60V

-

100 @ 150mA, 10V

600mW

200MHz

-

Through Hole

TO-78-6 Metal Can

TO-78-6

2N2721

Central Semiconductor Corp

TRANS NPN DUAL TO78

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

Paket: TO-78-6 Metal Can

Lager7.136

-

Through Hole

TO-78-6 Metal Can

TO-78-6

HN1B04F(TE85L,F)

Toshiba Semiconductor and Storage

TRANS NPN/PNP 30V 0.5A SM6

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Power - Max: 300mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SM6

Paket: SC-74, SOT-457

Lager5.232

500mA

30V

250mV @ 10mA, 100mA

100nA (ICBO)

70 @ 100mA, 1V

300mW

200MHz

150°C (TJ)

Surface Mount

SC-74, SOT-457

SM6

SSM2220PZ

Analog Devices Inc.

TRANS 2PNP 36V 0.02A 8DIP

Transistor Type: 2 PNP (Dual) Matched Pair
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 36V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 100µA, 1mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: 190MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

Paket: 8-DIP (0.300", 7.62mm)

Lager15.132

20mA

36V

100mV @ 100µA, 1mA

-

190MHz

-65°C ~ 150°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

XP0C30100L

Panasonic Electronic Components

TRANS NPN/PNP DARL 50V SMINI5

Transistor Type: NPN, PNP Complementary Darlington
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
Power - Max: 150mW
Frequency - Transition: 150MHz, 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: SMini5-G1

Paket: 5-TSSOP, SC-70-5, SOT-353

Lager4.320

100mA

50V

300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA

100µA

160 @ 2mA, 10V

150mW

150MHz, 80MHz

150°C (TJ)

Surface Mount

5-TSSOP, SC-70-5, SOT-353

SMini5-G1

XN0440100L

Panasonic Electronic Components

TRANS 2PNP 50V 0.1A MINI6

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
Power - Max: 300mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: MINI6-G1

Paket: SOT-23-6

Lager2.464

100mA

50V

500mV @ 10mA, 100mA

100µA

160 @ 2mA, 10V

300mW

80MHz

150°C (TJ)

Surface Mount

SOT-23-6

MINI6-G1

SLA4060

Sanken

TRANS 4NPN DARL 120V 5A 12SIP

Transistor Type: 4 NPN Darlington (Quad)
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V
Power - Max: 5W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 12-SIP, Exposed Tab
Supplier Device Package: 12-SIP

Paket: 12-SIP, Exposed Tab

Lager3.136

5A

120V

1.5V @ 3mA, 3A

10µA (ICBO)

2000 @ 3A, 2V

5W

-

150°C (TJ)

Through Hole

12-SIP, Exposed Tab

12-SIP

ULN2803AFWG,C,EL

Toshiba Semiconductor and Storage

TRANS 8NPN DARL 50V 0.5A 18SOL

Transistor Type: 8 NPN Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Power - Max: 1.31W
Frequency - Transition: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 18-SOL

Paket: 18-SOIC (0.295", 7.50mm Width)

Lager4.608

500mA

50V

1.6V @ 500µA, 350mA

-

1000 @ 350mA, 2V

1.31W

-

-40°C ~ 85°C (TA)

Surface Mount

18-SOIC (0.295", 7.50mm Width)

18-SOL

NSV60100DMTWTBG

ON Semiconductor

DUAL TRANSISTOR PNP

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Power - Max: 2.27W
Frequency - Transition: 155MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)

Paket: 6-WDFN Exposed Pad

Lager6.224

1A

60V

300mV @ 100mA, 2A

100nA (ICBO)

120 @ 500mA, 2V

2.27W

155MHz

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-WDFN (2x2)

UMZ8NTR

Rohm Semiconductor

TRANS NPN/PNP 50V/12V UMT6

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 150mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V / 270 @ 10mA, 2V
Power - Max: 150mW
Frequency - Transition: 180MHz, 260MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

Paket: 6-TSSOP, SC-88, SOT-363

Lager4.816

150mA, 500mA

50V, 12V

400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA

100nA (ICBO)

120 @ 1mA, 6V / 270 @ 10mA, 2V

150mW

180MHz, 260MHz

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

PBSS5260PAPSX

Nexperia USA Inc.

TRANS 2PNP 60V 2A 6HUSON

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1A, 2V
Power - Max: 370mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020D-6

Paket: 6-UDFN Exposed Pad

Lager4.016

2A

60V

500mV @ 200mA, 2A

100nA (ICBO)

110 @ 1A, 2V

370mW

100MHz

150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

DFN2020D-6

NP0A45600A

Panasonic Electronic Components

TRANS 2PNP 15V 0.05A SSSMINI6

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Power - Max: 125mW
Frequency - Transition: 1.5GHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SSSMini6-F1

Paket: SOT-963

Lager3.984

50mA

15V

200mV @ 1mA, 10mA

100nA (ICBO)

50 @ 10mA, 1V

125mW

1.5GHz

125°C (TJ)

Surface Mount

SOT-963

SSSMini6-F1

DSS4160FDB-7

Diodes Incorporated

TRANS NPH U-DFN2020-6

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Power - Max: 405mW
Frequency - Transition: 175MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

Paket: 6-UDFN Exposed Pad

Lager2.592

1A

60V

240mV @ 50mA, 1A

100nA (ICBO)

150 @ 500mA, 2V

405mW

175MHz

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

2SC4207-GR(TE85L,F

Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A SMV

Transistor Type: 2 NPN (Dual) Common Emitter
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 300mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

Paket: SC-74A, SOT-753

Lager6.384

150mA

50V

250mV @ 10mA, 100mA

100nA (ICBO)

200 @ 2mA, 6V

300mW

80MHz

125°C (TJ)

Surface Mount

SC-74A, SOT-753

SMV

PBSS2515VPN,115

Nexperia USA Inc.

TRANS NPN/PNP 15V 0.5A SOT666

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Power - Max: 300mW
Frequency - Transition: 420MHz, 280MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666

Paket: SOT-563, SOT-666

Lager116.100

500mA

15V

250mV @ 50mA, 500mA

100nA (ICBO)

150 @ 100mA, 2V

300mW

420MHz, 280MHz

150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-666

BC847SH6327XTSA1

Infineon Technologies

TRANS 2NPN 45V 0.1A SOT363

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

Paket: 6-VSSOP, SC-88, SOT-363

Lager144.912

100mA

45V

600mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

250mW

250MHz

150°C (TJ)

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

MPQ6700

Central Semiconductor Corp

TRANS 2NPN/2PNP 40V 0.2A

Transistor Type: 2 NPN, 2 PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V
Power - Max: 500mW
Frequency - Transition: 200MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: TO-116

Paket: 14-DIP (0.300", 7.62mm)

Lager7.932

200mA

40V

250mV @ 1mA, 10mA

50nA (ICBO)

70 @ 10mA, 1V

500mW

200MHz

-65°C ~ 150°C (TJ)

Through Hole

14-DIP (0.300", 7.62mm)

TO-116

FFB2222A

Fairchild/ON Semiconductor

TRANS 2NPN 40V 0.5A SC70-6

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 300mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

Paket: 6-TSSOP, SC-88, SOT-363

Lager92.400

500mA

40V

1V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

300mW

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

MBT3946DW1T1G

ON Semiconductor

TRANS NPN/PNP 40V 0.2A SC88

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 150mW
Frequency - Transition: 300MHz, 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

Paket: 6-TSSOP, SC-88, SOT-363

Lager6.451.608

200mA

40V

300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA

-

100 @ 10mA, 1V

150mW

300MHz, 250MHz

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

HN1C03FU-B-LF

Toshiba Semiconductor and Storage

NPN + NPN IND. TRANSISTOR VCEO20

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Power - Max: 200mW
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

Paket: -

Lager16.884

300mA

20V

100mV @ 3mA, 30A

100nA (ICBO)

350 @ 4mA, 2V

200mW

30MHz

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

BC846BPN-AU_R1_000A1

Panjit International Inc.

SOT-363, TRANSISTOR

Transistor Type: 1 NPN, 1 PNP Complementary
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V / 220 @ 2mA, 5V
Power - Max: 225mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

Paket: -

Lager4.962

100mA

65V

600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V / 220 @ 2mA, 5V

225mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

2N2920U-TR

Microchip Technology

TRANSISTOR DUAL SMALL-SIGNAL BJT

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-SMD

Paket: -

Request a Quote

30mA

60V

300mV @ 100µA, 1mA

10µA (ICBO)

300 @ 1mA, 5V

350mW

-

-65°C ~ 200°C (TJ)

Surface Mount

6-SMD, No Lead

6-SMD

NJVMJK32CTWG

onsemi

POWER TRANSISTOR 100 V, 3 A DUAL

Transistor Type: -
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Power - Max: 2.7W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Supplier Device Package: LFPAK4 (5x6)

Paket: -

Lager8.940

3A

100V

1.2V @ 375mA, 3A

50µA

25 @ 1A, 4V

2.7W

3MHz

-65°C ~ 150°C (TJ)

Surface Mount

SOT-1023, 4-LFPAK

LFPAK4 (5x6)

MMDT3906TB6_R1_00001

Panjit International Inc.

DUAL PNP GENERAL PURPOSE SWITCHI

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 200mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

Paket: -

Lager20.550

200mA

40V

400mV @ 5mA, 50mA

50nA

100 @ 10mA, 1V

200mW

250MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

MPQ7053-TIN-LEAD

Central Semiconductor Corp

TRANS 2NPN/2PNP 250V 0.5A

Transistor Type: 2 NPN, 2 PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 250V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Power - Max: 750mW
Frequency - Transition: 50MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: TO-116

Paket: -

Request a Quote

500mA

250V

700mV @ 2mA, 20mA

250nA (ICBO)

25 @ 30mA, 10V

750mW

50MHz

-65°C ~ 150°C (TJ)

Through Hole

14-DIP (0.300", 7.62mm)

TO-116

JAN2N6987U-TR

Microchip Technology

TRANSISTOR QUAD SMALL-SIGNAL BJT

Transistor Type: 4 PNP (Quad)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-SMD

Paket: -

Request a Quote

600mA

60V

1.6V @ 50mA, 500mA

10µA (ICBO)

100 @ 150mA, 10V

1W

-

-65°C ~ 200°C (TJ)

Surface Mount

6-SMD, No Lead

6-SMD

BC847BVNQ-7

Diodes Incorporated

GENERAL PURPOSE TRANSISTOR SOT56

Transistor Type: 1 NPN, 1 PNP Complementary
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 150mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

Paket: -

Lager9.000

100mA

45V

600mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

150mW

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

LS351-SOT-23-6L

Linear Integrated Systems, Inc.

TIGHTLY MATCHED, MONOLITHIC DUAL

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 10mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 200pA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 500mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

Paket: -

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10mA

45V

500mV @ 100µA, 1mA

200pA (ICBO)

150 @ 1mA, 5V

500mW

200MHz

150°C (TJ)

Surface Mount

SOT-23-6