Page 47 - Transistoren - Bipolar (BJT) - Arrays | Diskrete Halbleiterprodukte

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SMBT3904PNE6327HTSA1	Infineon Technologies	TRANS NPN/PNP 40V 0.2A SOT363-6 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 250mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	Paket: 6-VSSOP, SC-88, SOT-363	Lager2.432	200mA	40V	400mV @ 5mA, 50mA	50nA (ICBO)	100 @ 10mA, 1V	250mW	250MHz	150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
BC847QASX	NXP	TRANS NPN/PNP 45V 0.1A 6DFN Transistor Type: NPN, PNP Complementary Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 230mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-XFDFN Exposed Pad Supplier Device Package: DFN1010B-6	Paket: 10-XFDFN Exposed Pad	Lager2.368	100mA	45V	100mV @ 500µA, 10mA	15nA (ICBO)	200 @ 2mA, 5V	230mW	100MHz	150°C (TJ)	Surface Mount	10-XFDFN Exposed Pad	DFN1010B-6
JANTX2N3811U	Microsemi Corporation	TRANS 2PNP 60V 0.05A Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	Paket: TO-78-6 Metal Can	Lager5.616	50mA	60V	250mV @ 100µA, 1mA	10µA (ICBO)	300 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
MC1413BD	ON Semiconductor	TRANS 7NPN DARL 50V 0.5A 16SO Transistor Type: 7 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: - Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	Paket: 16-SOIC (0.154", 3.90mm Width)	Lager21.684	500mA	50V	1.6V @ 500µA, 350mA	-	1000 @ 350mA, 2V	-	-	150°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
ZDT605TA	Diodes Incorporated	TRANS 2NPN DARL 120V 1A SM8 Transistor Type: 2 NPN Darlington (Dual) Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V Power - Max: 2.75W Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-223-8 Supplier Device Package: SM8	Paket: SOT-223-8	Lager7.712	1A	120V	1.5V @ 1mA, 1A	10µA	2000 @ 1A, 5V	2.75W	150MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-8	SM8
BC846UE6327HTSA1	Infineon Technologies	TRANS 2NPN 65V 0.1A SC74-6 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: PG-SC74-6	Paket: SC-74, SOT-457	Lager5.440	100mA	65V	600mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	250mW	250MHz	150°C (TJ)	Surface Mount	SC-74, SOT-457	PG-SC74-6
BC847PNH6727XTSA1	Infineon Technologies	TRANS NPN/PNP 45V 0.1A SOT363-6 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	Paket: 6-VSSOP, SC-88, SOT-363	Lager7.008	100mA	45V	650mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	250mW	250MHz	150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
BC847PNH6433XTMA1	Infineon Technologies	TRANS NPN/PNP 45V 0.1A SOT363-6 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	Paket: 6-VSSOP, SC-88, SOT-363	Lager3.552	100mA	45V	650mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	250mW	250MHz	150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
JANTX2N6987	Microsemi Corporation	TRANS 4PNP 60V 0.6A TO116 Transistor Type: 4 PNP (Quad) Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1.5W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: -	Paket: 14-DIP (0.300", 7.62mm)	Lager6.256	600mA	60V	1.6V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	1.5W	-	-65°C ~ 200°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	-
2N3810U	Microsemi Corporation	TRANS 2PNP 60V 0.05A TO-78 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	Paket: TO-78-6 Metal Can	Lager3.936	50mA	60V	250mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
CPH6539-TL-H	ON Semiconductor	TRANS 2NPN 30V 1.5A 6CPH Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 750mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 1.2W Frequency - Transition: 500MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-CPH	Paket: SC-74, SOT-457	Lager6.000	1.5A	30V	250mV @ 15mA, 750mA	100nA (ICBO)	200 @ 100mA, 2V	1.2W	500MHz	150°C (TJ)	Surface Mount	SC-74, SOT-457	6-CPH
QS5W2TR	Rohm Semiconductor	TRANS 2NPN 50V 3A TSMT5 Transistor Type: 2 NPN (Dual) Common Emitter Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V Power - Max: 1.25W Frequency - Transition: 320MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-5 Thin, TSOT-23-5 Supplier Device Package: TSMT5	Paket: SOT-23-5 Thin, TSOT-23-5	Lager36.000	3A	50V	350mV @ 50mA, 1A	1µA (ICBO)	180 @ 50mA, 3V	1.25W	320MHz	150°C (TJ)	Surface Mount	SOT-23-5 Thin, TSOT-23-5	TSMT5
EMT1T2R	Rohm Semiconductor	TRANS 2PNP 50V 0.15A 6EMT Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 150mW Frequency - Transition: 140MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	Paket: SOT-563, SOT-666	Lager88.320	150mA	50V	500mV @ 5mA, 50mA	100nA (ICBO)	120 @ 1mA, 6V	150mW	140MHz	150°C (TJ)	Surface Mount	SOT-563, SOT-666	EMT6
HN4C51J(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2NPN 120V 0.1A SMV Transistor Type: 2 NPN (Dual) Common Base Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	Paket: SC-74A, SOT-753	Lager7.856	100mA	120V	300mV @ 1mA, 10mA	100nA (ICBO)	200 @ 2mA, 6V	300mW	100MHz	150°C (TJ)	Surface Mount	SC-74A, SOT-753	SMV
MMDT2227M-7	Diodes Incorporated	TRANS NPN/PNP 40V/60V 0.6A SOT26 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V, 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 300mW Frequency - Transition: 300MHz, 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	Paket: SOT-23-6	Lager2.672	600mA	40V, 60V	1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	300mW	300MHz, 200MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-26
HN1B04FE-Y,LF	Toshiba Semiconductor and Storage	TRANS NPN/PNP 50V 0.15A ES6 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	Paket: SOT-563, SOT-666	Lager34.614	150mA	50V	250mV @ 10mA, 100mA	100nA (ICBO)	120 @ 2mA, 6V	100mW	80MHz	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6
BC846BPN,115	Nexperia USA Inc.	TRANS NPN/PNP 65V 0.1A 6TSSOP Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP, SC-88	Paket: 6-TSSOP, SC-88, SOT-363	Lager97.692	100mA	65V	300mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	300mW	100MHz	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88
MAT01GHZ	Analog Devices Inc.	TRANS 2NPN 45V 0.025A TO78-6 Transistor Type: 2 NPN (Dual) Matched Pair Current - Collector (Ic) (Max): 25mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 500mW Frequency - Transition: 450MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	Paket: TO-78-6 Metal Can	Lager4.048	25mA	45V	800mV @ 1mA, 10mA	400nA	-	500mW	450MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
MCH3431-TL-E-SY	Sanyo	PNP/NPN EPITAXIAL PLANAR SILICON Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SG2813J	Microchip Technology	DRIVER - MEDIUM CURRENT ARRAY, H Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.9V @ 600µA, 500mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 18-CDIP (0.300", 7.62mm) Supplier Device Package: 18-CERDIP	Paket: -	Request a Quote	600mA	50V	1.9V @ 600µA, 500mA	-	-	-	-	-55°C ~ 125°C (TA)	Through Hole	18-CDIP (0.300", 7.62mm)	18-CERDIP
ZDT694QTA	Diodes Incorporated	PWR LOW SAT TRANSISTOR SM-8 T&R Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 150mA, 2V Power - Max: 2.25W Frequency - Transition: 130MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-223-8 Supplier Device Package: SM8	Paket: -	Request a Quote	500mA	120V	500mV @ 5mA, 400mA	100nA (ICBO)	500 @ 150mA, 2V	2.25W	130MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-8	SM8
SG2821L-DESC	Microchip Technology	DRIVER - MEDIUM CURRENT ARRAY, H Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 95V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: - Frequency - Transition: - Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 20-CLCC Supplier Device Package: 20-CLCC (8.89x8.89)	Paket: -	Request a Quote	500mA	95V	1.6V @ 500µA, 350mA	-	1000 @ 350mA, 2V	-	-	-55°C ~ 125°C (TA)	Surface Mount	20-CLCC	20-CLCC (8.89x8.89)
MNS2N3810UP	Microchip Technology	DUAL SMALL-SIGNAL BJT Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	Paket: -	Request a Quote	50mA	60V	250mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JANTX2N4854U-TR	Microchip Technology	TRANSISTOR DUAL SMALL-SIGNAL BJT Transistor Type: 1 NPN, 1 PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 600mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: 6-SMD	Paket: -	Request a Quote	600mA	40V	400mV @ 15mA, 150mA	10µA (ICBO)	100 @ 150mA, 10V	600mW	-	-65°C ~ 200°C (TJ)	Surface Mount	6-SMD, No Lead	6-SMD
IT124-TO-78-6L-ROHS	Linear Integrated Systems, Inc.	HIGH VOLTAGE, SUPER BETA, MONOLI Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 10mA Voltage - Collector Emitter Breakdown (Max): 2V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100µA, 1mA Current - Collector Cutoff (Max): 100pA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 10µA, 1V Power - Max: 500mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	Paket: -	Lager30	10mA	2V	500mV @ 100µA, 1mA	100pA (ICBO)	1500 @ 10µA, 1V	500mW	100MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
MSR2N3810U-TR	Microchip Technology	DUAL RH SMALL-SIGNAL BJT Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: U	Paket: -	Request a Quote	50mA	60V	250mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Surface Mount	6-SMD, No Lead	U
BC847CDW1T1	onsemi	TRANS NPN DUAL 45V 100MA SOT-363 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
DXTC3C100PD-13	Diodes Incorporated	SS LOW SAT TRANSISTOR POWERDI506 Transistor Type: 1 NPN, 1 PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A / 325mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V / 170 @ 500mA, 10V Power - Max: 1.47W Frequency - Transition: 130MHz, 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	Paket: -	Request a Quote	3A	100V	330mV @ 300mA, 3A / 325mV @ 200mA, 2A	100nA	150 @ 500mA, 10V / 170 @ 500mA, 10V	1.47W	130MHz, 100MHz	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)

SMBT3904PNE6327HTSA1

Infineon Technologies

TRANS NPN/PNP 40V 0.2A SOT363-6

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 250mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

Paket: 6-VSSOP, SC-88, SOT-363

Lager2.432

200mA

40V

400mV @ 5mA, 50mA

50nA (ICBO)

100 @ 10mA, 1V

250mW

250MHz

150°C (TJ)

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

BC847QASX

NXP

TRANS NPN/PNP 45V 0.1A 6DFN

Transistor Type: NPN, PNP Complementary
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 230mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-XFDFN Exposed Pad
Supplier Device Package: DFN1010B-6

Paket: 10-XFDFN Exposed Pad

Lager2.368

100mA

45V

100mV @ 500µA, 10mA

15nA (ICBO)

200 @ 2mA, 5V

230mW

100MHz

150°C (TJ)

Surface Mount

10-XFDFN Exposed Pad

DFN1010B-6

JANTX2N3811U

Microsemi Corporation

TRANS 2PNP 60V 0.05A

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

Paket: TO-78-6 Metal Can

Lager5.616

50mA

60V

250mV @ 100µA, 1mA

10µA (ICBO)

300 @ 1mA, 5V

350mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

MC1413BD

ON Semiconductor

TRANS 7NPN DARL 50V 0.5A 16SO

Transistor Type: 7 NPN Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Power - Max: -
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

Paket: 16-SOIC (0.154", 3.90mm Width)

Lager21.684

500mA

50V

1.6V @ 500µA, 350mA

-

1000 @ 350mA, 2V

-

150°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

ZDT605TA

Diodes Incorporated

TRANS 2NPN DARL 120V 1A SM8

Transistor Type: 2 NPN Darlington (Dual)
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
Power - Max: 2.75W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SM8

Paket: SOT-223-8

Lager7.712

1A

120V

1.5V @ 1mA, 1A

10µA

2000 @ 1A, 5V

2.75W

150MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223-8

SM8

BC846UE6327HTSA1

Infineon Technologies

TRANS 2NPN 65V 0.1A SC74-6

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: PG-SC74-6

Paket: SC-74, SOT-457

Lager5.440

100mA

65V

600mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

250mW

250MHz

150°C (TJ)

Surface Mount

SC-74, SOT-457

PG-SC74-6

BC847PNH6727XTSA1

Infineon Technologies

TRANS NPN/PNP 45V 0.1A SOT363-6

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

Paket: 6-VSSOP, SC-88, SOT-363

Lager7.008

100mA

45V

650mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

250mW

250MHz

150°C (TJ)

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

BC847PNH6433XTMA1

Infineon Technologies

TRANS NPN/PNP 45V 0.1A SOT363-6

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

Paket: 6-VSSOP, SC-88, SOT-363

Lager3.552

100mA

45V

650mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

250mW

250MHz

150°C (TJ)

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

JANTX2N6987

Microsemi Corporation

TRANS 4PNP 60V 0.6A TO116

Transistor Type: 4 PNP (Quad)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1.5W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: -

Paket: 14-DIP (0.300", 7.62mm)

Lager6.256

600mA

60V

1.6V @ 50mA, 500mA

10µA (ICBO)

100 @ 150mA, 10V

1.5W

-

-65°C ~ 200°C (TJ)

Through Hole

14-DIP (0.300", 7.62mm)

-

2N3810U

Microsemi Corporation

TRANS 2PNP 60V 0.05A TO-78

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

Paket: TO-78-6 Metal Can

Lager3.936

50mA

60V

250mV @ 100µA, 1mA

10µA (ICBO)

150 @ 1mA, 5V

350mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

CPH6539-TL-H

ON Semiconductor

TRANS 2NPN 30V 1.5A 6CPH

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 750mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Power - Max: 1.2W
Frequency - Transition: 500MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-CPH

Paket: SC-74, SOT-457

Lager6.000

1.5A

30V

250mV @ 15mA, 750mA

100nA (ICBO)

200 @ 100mA, 2V

1.2W

500MHz

150°C (TJ)

Surface Mount

SC-74, SOT-457

6-CPH

QS5W2TR

Rohm Semiconductor

TRANS 2NPN 50V 3A TSMT5

Transistor Type: 2 NPN (Dual) Common Emitter
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Power - Max: 1.25W
Frequency - Transition: 320MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Supplier Device Package: TSMT5

Paket: SOT-23-5 Thin, TSOT-23-5

Lager36.000

3A

50V

350mV @ 50mA, 1A

1µA (ICBO)

180 @ 50mA, 3V

1.25W

320MHz

150°C (TJ)

Surface Mount

SOT-23-5 Thin, TSOT-23-5

TSMT5

EMT1T2R

Rohm Semiconductor

TRANS 2PNP 50V 0.15A 6EMT

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 150mW
Frequency - Transition: 140MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

Paket: SOT-563, SOT-666

Lager88.320

150mA

50V

500mV @ 5mA, 50mA

100nA (ICBO)

120 @ 1mA, 6V

150mW

140MHz

150°C (TJ)

Surface Mount

SOT-563, SOT-666

EMT6

HN4C51J(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN 120V 0.1A SMV

Transistor Type: 2 NPN (Dual) Common Base
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

Paket: SC-74A, SOT-753

Lager7.856

100mA

120V

300mV @ 1mA, 10mA

100nA (ICBO)

200 @ 2mA, 6V

300mW

100MHz

150°C (TJ)

Surface Mount

SC-74A, SOT-753

SMV

MMDT2227M-7

Diodes Incorporated

TRANS NPN/PNP 40V/60V 0.6A SOT26

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V, 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 300mW
Frequency - Transition: 300MHz, 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-26

Paket: SOT-23-6

Lager2.672

600mA

40V, 60V

1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

300mW

300MHz, 200MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-26

HN1B04FE-Y,LF

Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A ES6

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

Paket: SOT-563, SOT-666

Lager34.614

150mA

50V

250mV @ 10mA, 100mA

100nA (ICBO)

120 @ 2mA, 6V

100mW

80MHz

150°C (TJ)

Surface Mount

SOT-563, SOT-666

ES6

BC846BPN,115

Nexperia USA Inc.

TRANS NPN/PNP 65V 0.1A 6TSSOP

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP, SC-88

Paket: 6-TSSOP, SC-88, SOT-363

Lager97.692

100mA

65V

300mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

300mW

100MHz

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP, SC-88

MAT01GHZ

Analog Devices Inc.

TRANS 2NPN 45V 0.025A TO78-6

Transistor Type: 2 NPN (Dual) Matched Pair
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 500mW
Frequency - Transition: 450MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

Paket: TO-78-6 Metal Can

Lager4.048

25mA

45V

800mV @ 1mA, 10mA

400nA

-

500mW

450MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

MCH3431-TL-E-SY

Sanyo

PNP/NPN EPITAXIAL PLANAR SILICON

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

SG2813J

Microchip Technology

DRIVER - MEDIUM CURRENT ARRAY, H

Transistor Type: 8 NPN Darlington
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.9V @ 600µA, 500mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 18-CDIP (0.300", 7.62mm)
Supplier Device Package: 18-CERDIP

Paket: -

Request a Quote

600mA

50V

1.9V @ 600µA, 500mA

-

-55°C ~ 125°C (TA)

Through Hole

18-CDIP (0.300", 7.62mm)

18-CERDIP

ZDT694QTA

Diodes Incorporated

PWR LOW SAT TRANSISTOR SM-8 T&R

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 150mA, 2V
Power - Max: 2.25W
Frequency - Transition: 130MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SM8

Paket: -

Request a Quote

500mA

120V

500mV @ 5mA, 400mA

100nA (ICBO)

500 @ 150mA, 2V

2.25W

130MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223-8

SM8

SG2821L-DESC

Microchip Technology

DRIVER - MEDIUM CURRENT ARRAY, H

Transistor Type: 8 NPN Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 95V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Power - Max: -
Frequency - Transition: -
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-CLCC
Supplier Device Package: 20-CLCC (8.89x8.89)

Paket: -

Request a Quote

500mA

95V

1.6V @ 500µA, 350mA

-

1000 @ 350mA, 2V

-

-55°C ~ 125°C (TA)

Surface Mount

20-CLCC

20-CLCC (8.89x8.89)

MNS2N3810UP

Microchip Technology

DUAL SMALL-SIGNAL BJT

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

Paket: -

Request a Quote

50mA

60V

250mV @ 100µA, 1mA

10µA (ICBO)

150 @ 1mA, 5V

350mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

JANTX2N4854U-TR

Microchip Technology

TRANSISTOR DUAL SMALL-SIGNAL BJT

Transistor Type: 1 NPN, 1 PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 600mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-SMD

Paket: -

Request a Quote

600mA

40V

400mV @ 15mA, 150mA

10µA (ICBO)

100 @ 150mA, 10V

600mW

-

-65°C ~ 200°C (TJ)

Surface Mount

6-SMD, No Lead

6-SMD

IT124-TO-78-6L-ROHS

Linear Integrated Systems, Inc.

HIGH VOLTAGE, SUPER BETA, MONOLI

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 10mA
Voltage - Collector Emitter Breakdown (Max): 2V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 100pA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 10µA, 1V
Power - Max: 500mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

Paket: -

Lager30

10mA

2V

500mV @ 100µA, 1mA

100pA (ICBO)

1500 @ 10µA, 1V

500mW

100MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

MSR2N3810U-TR

Microchip Technology

DUAL RH SMALL-SIGNAL BJT

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: U

Paket: -

Request a Quote

50mA

60V

250mV @ 100µA, 1mA

10µA (ICBO)

150 @ 1mA, 5V

350mW

-

-65°C ~ 200°C (TJ)

Surface Mount

6-SMD, No Lead

U

BC847CDW1T1

onsemi

TRANS NPN DUAL 45V 100MA SOT-363

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

DXTC3C100PD-13

Diodes Incorporated

SS LOW SAT TRANSISTOR POWERDI506

Transistor Type: 1 NPN, 1 PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A / 325mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V / 170 @ 500mA, 10V
Power - Max: 1.47W
Frequency - Transition: 130MHz, 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type UXD)

Paket: -

Request a Quote

3A

100V

330mV @ 300mA, 3A / 325mV @ 200mA, 2A

100nA

150 @ 500mA, 10V / 170 @ 500mA, 10V

1.47W

130MHz, 100MHz

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8 (Type UXD)