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Transistoren - Bipolar (BJT) - HF

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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Auf Lager
Anzahl
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFR720L3RHE6327XTSA1
Infineon Technologies

TRANS RF NPN 4V 20MA TSLP-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 45GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
  • Gain: 24dB
  • Power - Max: 80mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
Paket: SC-101, SOT-883
Auf Lager274
4.7V
45GHz
0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
24dB
80mW
160 @ 13mA, 3V
20mA
150°C (TJ)
Surface Mount
SC-101, SOT-883
PG-TSLP-3
MMBTH81_F080
Fairchild/ON Semiconductor

TRANSISTOR RF PNP SOT-23

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Auf Lager108
-
-
-
-
-
-
-
-
-
-
-
hotMRF8372R1
Microsemi Corporation

TRANS NPN 16V 200MA SO8

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 870MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB ~ 9.5dB
  • Power - Max: 2.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Auf Lager50.682
16V
870MHz
-
8dB ~ 9.5dB
2.2W
30 @ 50mA, 5V
200mA
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hotMRF559
Microsemi Corporation

TRANS NPN 16V 150MA MACROX

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 870MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.5dB
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Macro-X
  • Supplier Device Package: Macro-X
Paket: Macro-X
Auf Lager396
16V
870MHz
-
9.5dB
2W
30 @ 50mA, 10V
150mA
-
Surface Mount
Macro-X
Macro-X
JAN2N4957
Microsemi Corporation

TRANS PNP 30V 30MA TO72

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
  • Gain: 25dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-72-3 Metal Can
  • Supplier Device Package: TO-72
Paket: TO-72-3 Metal Can
Auf Lager162
30V
-
3.5dB @ 450MHz
25dB
200mW
30 @ 5mA, 10V
30mA
-65°C ~ 200°C (TJ)
Through Hole
TO-72-3 Metal Can
TO-72
BFS540,115
NXP

TRANS RF NPN 15V 9GHZ SOT323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 1.7dB @ 9MHz
  • Gain: -
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
  • Current - Collector (Ic) (Max): 120mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
Paket: SC-70, SOT-323
Auf Lager428
15V
9GHz
1.3dB ~ 1.7dB @ 9MHz
-
500mW
100 @ 40mA, 8V
120mA
175°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
hot2SC5374A-TL-E
ON Semiconductor

TRANS NPN BIPO 100MA 10V SMCP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 5.2GHz
  • Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
  • Gain: 10.5dB @ 1GHz
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SMCP
Paket: SC-75, SOT-416
Auf Lager22.000
10V
5.2GHz
1.4dB @ 1GHz
10.5dB @ 1GHz
100mW
110 @ 7mA, 3V
100mA
150°C (TJ)
Surface Mount
SC-75, SOT-416
SMCP
NE46234-SE-AZ
CEL

RF TRANSISTOR NPN SOT-89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 2.3dB @ 1GHz
  • Gain: 8.3dB
  • Power - Max: 1.8W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
Paket: TO-243AA
Auf Lager155
12V
6GHz
2.3dB @ 1GHz
8.3dB
1.8W
125 @ 50mA, 5V
150mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
AT-41535G
Broadcom Limited

TRANSISTOR NPN BIPOLAR 35MICRO-X

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 4GHz
  • Gain: 10dB ~ 18dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 60mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD (35 micro-X)
  • Supplier Device Package: 35 micro-X
Paket: 4-SMD (35 micro-X)
Auf Lager343
12V
8GHz
1.3dB ~ 3dB @ 1GHz ~ 4GHz
10dB ~ 18dB
500mW
30 @ 10mA, 8V
60mA
150°C (TJ)
Surface Mount
4-SMD (35 micro-X)
35 micro-X
MPSH81_D27Z
Fairchild/ON Semiconductor

TRANS RF PNP 20V 50MA TO-92

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Auf Lager248
20V
600MHz
-
-
350mW
60 @ 5mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
AT-42036-TR1G
Broadcom Limited

TRANS NPN BIPO 12V 80MA 36-SMD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 2GHz ~ 4GHz
  • Gain: 10dB ~ 13.5dB
  • Power - Max: 600mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD (36 micro-X)
  • Supplier Device Package: 36 micro-X
Paket: 4-SMD (36 micro-X)
Auf Lager373
12V
8GHz
2dB ~ 3dB @ 2GHz ~ 4GHz
10dB ~ 13.5dB
600mW
30 @ 35mA, 8V
80mA
150°C (TJ)
Surface Mount
4-SMD (36 micro-X)
36 micro-X
AT-64023
Broadcom Limited

TRANS NPN BIPO 20V 200MA 230-SMD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 110mA, 8V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD (230 mil BeO)
  • Supplier Device Package: 230 mil Be0
Paket: 4-SMD (230 mil BeO)
Auf Lager467
20V
-
-
-
3W
20 @ 110mA, 8V
200mA
200°C (TJ)
Surface Mount
4-SMD (230 mil BeO)
230 mil Be0
UPA806T-A
CEL

RF DUAL TRANSISTORS NPN SOT-363

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 8.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paket: 6-TSSOP, SC-88, SOT-363
Auf Lager219
6V
12GHz
1.5dB @ 2GHz
8.5dB
200mW
75 @ 10mA, 3V
30mA
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
HFA3128R96
Intersil

IC TRANS ARRAY 5X PND 16QFN

  • Transistor Type: 5 PNP
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-VFQFN Exposed Pad
  • Supplier Device Package: 16-QFN (3x3)
Paket: 16-VFQFN Exposed Pad
Auf Lager336
15V
5.5GHz
3.5dB @ 1GHz
-
150mW
20 @ 10mA, 2V
65mA
175°C (TJ)
Surface Mount
16-VFQFN Exposed Pad
16-QFN (3x3)
KSC1393YTA
Fairchild/ON Semiconductor

TRANSISTOR NPN 30V 20MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 700MHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz
  • Gain: 20dB ~ 24dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 2mA, 10V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Auf Lager297
30V
700MHz
2dB ~ 3dB @ 200MHz
20dB ~ 24dB
250mW
90 @ 2mA, 10V
20mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
NE68519-T1
CEL

TRANS NPN 2GHZ SMD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz
  • Gain: 7.5dB
  • Power - Max: 125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
Paket: SOT-523
Auf Lager365
6V
12GHz
1.5dB ~ 2.5dB @ 2GHz
7.5dB
125mW
75 @ 10mA, 3V
30mA
150°C (TJ)
Surface Mount
SOT-523
SOT-523
BFS520,115
NXP

TRANS NPN 70MA 15V 9GHZ SOT323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
Paket: SC-70, SOT-323
Auf Lager324
15V
9GHz
1.1dB ~ 2.1dB @ 900MHz
-
300mW
60 @ 20mA, 6V
70mA
175°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
MZ0912B50Y,114
Ampleon USA Inc.

TRANSISTOR POWER NPN SOT443A

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB
  • Power - Max: 150W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 3A
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOT-443A
  • Supplier Device Package: CDFM2
Paket: SOT-443A
Auf Lager240
20V
1.215GHz
-
8dB
150W
-
3A
-
Surface Mount
SOT-443A
CDFM2
BFG67,235
NXP

TRANS RF NPN 8GHZ 10V SOT143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
  • Gain: -
  • Power - Max: 380mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
Paket: TO-253-4, TO-253AA
Auf Lager194
10V
8GHz
1.3dB ~ 3dB @ 1GHz ~ 2GHz
-
380mW
60 @ 15mA, 5V
50mA
175°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
BFR94A,215
NXP

TRANS NPN 5GHZ TO-236AB

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2.1dB ~ 3dB @ 1GHz ~ 2GHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
Paket: TO-236-3, SC-59, SOT-23-3
Auf Lager163
15V
5GHz
2.1dB ~ 3dB @ 1GHz ~ 2GHz
-
300mW
65 @ 15mA, 10V
25mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
1214-220M
Microsemi Corporation

TRANS RF BIPO 700W 20A 55ST1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Frequency - Transition: 1.2GHz ~ 1.4GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.4dB
  • Power - Max: 700W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST
  • Supplier Device Package: 55ST
Paket: 55ST
Auf Lager429
70V
1.2GHz ~ 1.4GHz
-
7.4dB
700W
10 @ 1A, 5V
20A
200°C (TJ)
Chassis Mount
55ST
55ST
BFP780H6327XTSA1
Infineon Technologies

TRANSISTOR RF NPN AMP SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6.1V
  • Frequency - Transition: 900MHz
  • Noise Figure (dB Typ @ f): 1.2dB ~ 2.4dB @ 900MHz ~ 3.5GHz
  • Gain: 27dB
  • Power - Max: 600mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 90mA, 5V
  • Current - Collector (Ic) (Max): 120mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT343-4-2
Paket: SC-82A, SOT-343
Auf Lager340
6.1V
900MHz
1.2dB ~ 2.4dB @ 900MHz ~ 3.5GHz
27dB
600mW
85 @ 90mA, 5V
120mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT343-4-2
MRF321
M/A-Com Technology Solutions

TRANS RF NPN 33V 1.1A 244-04

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 33V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 13dB
  • Power - Max: 10W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 1.1A
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 244-04
  • Supplier Device Package: 244-04, STYLE 1
Paket: 244-04
Auf Lager365
33V
-
-
13dB
10W
20 @ 500mA, 5V
1.1A
-
Chassis Mount
244-04
244-04, STYLE 1
KSC1674YBU
Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
  • Gain: -
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA)
Auf Lager9.589
20V
600MHz
3dB ~ 5dB @ 100MHz
-
250mW
120 @ 1mA, 6V
20mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
2SC5065-Y(TE85L,F)
Toshiba Semiconductor and Storage

TRANSISTOR NPN MM-USM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 12dB ~ 17dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
Paket: SC-70, SOT-323
Auf Lager8.885
12V
7GHz
1.1dB @ 1GHz
12dB ~ 17dB
100mW
120 @ 10mA, 5V
30mA
125°C (TJ)
Surface Mount
SC-70, SOT-323
USM
MRF422
M/A-Com Technology Solutions

TRANS RF NPN 35V 20A 211-11

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 13dB
  • Power - Max: 150W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 211-11, Style 2
  • Supplier Device Package: 211-11, Style 2
Paket: 211-11, Style 2
Auf Lager521
35V
-
-
13dB
150W
15 @ 5A, 5V
20A
-
Chassis Mount
211-11, Style 2
211-11, Style 2
BFP620H7764XTSA1
Infineon Technologies

TRANS RF NPN 2.3V 80MA SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.8V
  • Frequency - Transition: 65GHz
  • Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
  • Gain: 21.5dB
  • Power - Max: 185mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
Paket: SC-82A, SOT-343
Auf Lager8.584
2.8V
65GHz
0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
21.5dB
185mW
110 @ 50mA, 1.5V
80mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFG35,115
NXP

TRANS NPN 10V 150MA SOT223

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 4GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
Paket: TO-261-4, TO-261AA
Auf Lager4.605
18V
4GHz
-
-
1W
25 @ 100mA, 10V
150mA
175°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
BFU550AR
NXP

TRANS RF NPN 12V 50MA TO-236AB

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
  • Gain: 18dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
Paket: TO-236-3, SC-59, SOT-23-3
Auf Lager56.788
12V
11GHz
0.6dB @ 900MHz
18dB
450mW
60 @ 15mA, 8V
50mA
-40°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
HFA3046BZ
Intersil

IC TRANSISTOR ARRAY UHF 14-SOIC

  • Transistor Type: 5 NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
Paket: 14-SOIC (0.154", 3.90mm Width)
Auf Lager2.613
12V
8GHz
3.5dB @ 1GHz
-
150mW
40 @ 10mA, 2V
65mA
150°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC