Transistoren - Bipolar (BJT) - HF | Diskrete Halbleiterprodukte | Heisener Electronics
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Transistoren - Bipolar (BJT) - HF

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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFP405E6433HTMA1
Infineon Technologies

TRANSISTOR RF NPN 4.5V SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
  • Gain: 23dB
  • Power - Max: 75mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
Paket: SC-82A, SOT-343
Lager5.344
5V
25GHz
1.25dB @ 1.8GHz
23dB
75mW
60 @ 5mA, 4V
25mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
hot NE67818-T1-A
CEL

RF TRANSISTOR NPN SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
  • Gain: 10dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
Paket: SC-82A, SOT-343
Lager108.000
6V
12GHz
1.7dB @ 2GHz
10dB
200mW
75 @ 30mA, 3V
100mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
hot 2SC3356-T1B-A
CEL

RF TRANSISTOR NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 13dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
Paket: TO-236-3, SC-59, SOT-23-3
Lager3.177.348
12V
7GHz
1.1dB @ 1GHz
13dB
200mW
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot 2N5109
Microsemi Corporation

TRANS RF NPN 2.5W 400MA TO39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.2GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 12dB
  • Power - Max: 2.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
Paket: TO-205AD, TO-39-3 Metal Can
Lager19.092
20V
1.2GHz
-
12dB
2.5W
40 @ 50mA, 15V
400mA
-
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
2SC5231A-9-TL-E
ON Semiconductor

TRANS NPN BIPO 70MA 10V SMCP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1GHz
  • Gain: 12dB ~ 8.5dB @ 1GHz
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Gull Wing
  • Supplier Device Package: SMCP
Paket: 3-SMD, Gull Wing
Lager4.384
10V
7GHz
1dB @ 1GHz
12dB ~ 8.5dB @ 1GHz
100mW
135 @ 20mA, 5V
70mA
150°C (TJ)
Surface Mount
3-SMD, Gull Wing
SMCP
hot MRF581
Microsemi Corporation

TRANS NPN 18V 200MA MACRO X

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
  • Gain: 13dB ~ 15.5dB
  • Power - Max: 1.25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Micro-X ceramic (84C)
  • Supplier Device Package: Micro-X ceramic (84C)
Paket: Micro-X ceramic (84C)
Lager5.808
18V
5GHz
3dB ~ 3.5dB @ 500MHz
13dB ~ 15.5dB
1.25W
50 @ 50mA, 5V
200mA
150°C (TJ)
Surface Mount
Micro-X ceramic (84C)
Micro-X ceramic (84C)
2SC3937G0L
Panasonic Electronic Components

TRANS NPN 10VCEO 80MA SMINI-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.7dB @ 800MHz
  • Gain: 13dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: SMini3-F2
Paket: SC-85
Lager3.600
10V
6GHz
1dB ~ 1.7dB @ 800MHz
13dB
150mW
50 @ 20mA, 8V
80mA
150°C (TJ)
Surface Mount
SC-85
SMini3-F2
PN3563_D26Z
Fairchild/ON Semiconductor

TRANS RF NPN 15V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 14dB ~ 26dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager5.648
15V
1.5GHz
-
14dB ~ 26dB
350mW
20 @ 8mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BLS2731-110,114
Ampleon USA Inc.

TRANSISTOR RF POWER SOT423A

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 75V
  • Frequency - Transition: 3.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB
  • Power - Max: 500W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 3A, 5V
  • Current - Collector (Ic) (Max): 12A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-423A
  • Supplier Device Package: CDFM2
Paket: SOT-423A
Lager5.776
75V
3.1GHz
-
7dB
500W
40 @ 3A, 5V
12A
200°C (TJ)
Surface Mount
SOT-423A
CDFM2
NE85633-R25-A
CEL

RF TRANSISTOR NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 11.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
Paket: TO-236-3, SC-59, SOT-23-3
Lager5.840
12V
7GHz
1.1dB @ 1GHz
11.5dB
200mW
125 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot KSC2786RBU
Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92S

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
  • Gain: 18dB ~ 22dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Short Body
  • Supplier Device Package: TO-92S
Paket: TO-226-3, TO-92-3 Short Body
Lager276.000
20V
600MHz
3dB ~ 5dB @ 100MHz
18dB ~ 22dB
250mW
40 @ 1mA, 6V
20mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
FMMT918TC
Diodes Incorporated

TRANSISTOR RF NPN SOT23-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: 15dB
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager6.384
15V
600MHz
6dB @ 60MHz
15dB
330mW
20 @ 3mA, 1V
100mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
FMMT5179TC
Diodes Incorporated

TRANSISTOR RF NPN SOT23-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
  • Gain: 15dB
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager6.240
12V
2GHz
4.5dB @ 200MHz
15dB
330mW
25 @ 3mA, 1V
50mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BFQ31ATA
Diodes Incorporated

TRANSISTOR UHF/VHF NPN SOT23-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: -
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager4.000
15V
600MHz
6dB @ 60MHz
-
330mW
100 @ 3mA, 1V
100mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
2N5770_D74Z
Fairchild/ON Semiconductor

TRANSISTOR RF NPN 15V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: 15dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA)
Lager5.808
15V
-
6dB @ 60MHz
15dB
350mW
50 @ 8mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BFS17A,235
NXP

TRANS NPN 15V 25MA 3GHZ SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 2.8GHz
  • Noise Figure (dB Typ @ f): 2.5dB @ 800MHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
Paket: TO-236-3, SC-59, SOT-23-3
Lager2.016
15V
2.8GHz
2.5dB @ 800MHz
-
300mW
25 @ 2mA, 1V
25mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
TCS1200
Microsemi Corporation

TRANSISTOR BIPO 55TU-1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.03GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10.2dBd
  • Power - Max: 2095W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 60A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55TU-1
  • Supplier Device Package: 55TU-1
Paket: 55TU-1
Lager5.328
65V
1.03GHz
-
10.2dBd
2095W
20 @ 1A, 5V
60A
200°C (TJ)
Chassis Mount
55TU-1
55TU-1
1214-370M
Microsemi Corporation

TRANS RF BIPO 600W 25A 55ST1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 75V
  • Frequency - Transition: 1.2GHz ~ 1.4GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.7dB ~ 9dB
  • Power - Max: 600W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Current - Collector (Ic) (Max): 25A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST
  • Supplier Device Package: 55ST
Paket: 55ST
Lager3.424
75V
1.2GHz ~ 1.4GHz
-
8.7dB ~ 9dB
600W
10 @ 5A, 5V
25A
200°C (TJ)
Chassis Mount
55ST
55ST
MS1227
Microsemi Corporation

TRANS RF BIPO 80W 4.5A M113

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 30MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 15dB
  • Power - Max: 80W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 5V
  • Current - Collector (Ic) (Max): 4.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M113
  • Supplier Device Package: M113
Paket: M113
Lager3.584
18V
30MHz
-
15dB
80W
200 @ 1A, 5V
4.5A
200°C (TJ)
Chassis Mount
M113
M113
NSVF4020SG4T1G
ON Semiconductor

RF TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager3.408
-
-
-
-
-
-
-
-
-
-
-
MAPR-000912-500S00
M/A-Com Technology Solutions

TRANS NPN 500W 960MHZ-1215MHZ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.44dB ~ 9.77dB
  • Power - Max: 500W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 52.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager6.096
80V
-
-
9.44dB ~ 9.77dB
500W
-
52.5A
200°C (TJ)
Chassis Mount
-
-
BFP840FESDH6327XTSA1
Infineon Technologies

IC TRANSISTOR RF NPN TSFP-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.6V
  • Frequency - Transition: 85GHz
  • Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz
  • Gain: 35dB
  • Power - Max: 75mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: 4-TSFP
Paket: SC-82A, SOT-343
Lager2.224
2.6V
85GHz
0.75dB @ 5.5GHz
35dB
75mW
150 @ 10mA, 1.8V
35mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
4-TSFP
2SC5347AE-TD-E
ON Semiconductor

TRANS NPN BIPO HI FREQ PCP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4.7GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
  • Gain: 8dB
  • Power - Max: 1.3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PCP
Paket: TO-243AA
Lager14.400
12V
4.7GHz
1.8dB @ 1GHz
8dB
1.3W
90 @ 50mA, 5V
150mA
150°C (TJ)
Surface Mount
TO-243AA
PCP
hot BFU730LXZ
NXP

TRANS RF NPN 3V 30MA XQFN3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3V
  • Frequency - Transition: 53GHz
  • Noise Figure (dB Typ @ f): 0.75dB @ 6GHz
  • Gain: 15.8dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 205 @ 2mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 3-XFDFN
  • Supplier Device Package: 3-DFN1006 (1.0x0.6)
Paket: 3-XFDFN
Lager45.900
3V
53GHz
0.75dB @ 6GHz
15.8dB
160mW
205 @ 2mA, 3V
30mA
-
Surface Mount
3-XFDFN
3-DFN1006 (1.0x0.6)
SS9018FBU
Fairchild/ON Semiconductor

TRANSISTOR RF NPN 30V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 54 @ 1mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA)
Lager94.626
15V
1.1GHz
-
-
400mW
54 @ 1mA, 5V
50mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BFP740FESDH6327XTSA1
Infineon Technologies

TRANS RF NPN 42GHZ 4.7V SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 47GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz
  • Gain: 9dB ~ 31dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
  • Current - Collector (Ic) (Max): 45mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
Paket: 4-SMD, Flat Leads
Lager27.360
4.7V
47GHz
0.5dB ~ 1.45dB @ 150MHz ~ 10GHz
9dB ~ 31dB
160mW
160 @ 25mA, 3V
45mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
hot 2SC5226A-4-TL-E
ON Semiconductor

TRANS NPN BIPO VHF-UHF MCP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: 3-MCP
Paket: SC-70, SOT-323
Lager38.400
10V
7GHz
1dB @ 1GHz
12dB
150mW
90 @ 20mA, 5V
70mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
3-MCP
BFR 106 E6327
Infineon Technologies

TRANSISTOR RF NPN 15V SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
  • Gain: 8.5dB ~ 13dB
  • Power - Max: 700mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
  • Current - Collector (Ic) (Max): 210mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager24.480
15V
5GHz
1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
8.5dB ~ 13dB
700mW
70 @ 70mA, 8V
210mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
hot MMBTH24-7-F
Diodes Incorporated

TRANS NPN 40V 50MA SOT23-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Frequency - Transition: 400MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 8mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager1.188.000
40V
400MHz
-
-
300mW
30 @ 8mA, 10V
50mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
hot MMBTH10LT1G
ON Semiconductor

TRANS SS VHF MIXER NPN 25V SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
Paket: TO-236-3, SC-59, SOT-23-3
Lager2.540.220
25V
650MHz
-
-
225mW
60 @ 4mA, 10V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)