Page 131 - Transistoren - Bipolar (BJT) - Einzeln, mit Vorspannung | Diskrete Halbleiterprodukte | Heisener Electronics
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Transistoren - Bipolar (BJT) - Einzeln, mit Vorspannung

Aufzeichnungen 4.130
Page  131/148
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Resistor - Base (R1) (Ohms)
Resistor - Emitter Base (R2) (Ohms)
DC Current Gain (hFE) (Min) @ Ic, Vce
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
Frequency - Transition
Power - Max
Mounting Type
Package / Case
Supplier Device Package
hot MUN5116T1
ON Semiconductor

TRANS PREBIAS PNP 202MW SC70-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 202mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70-3 (SOT323)
Paket: SC-70, SOT-323
Lager213.600
100mA
50V
4.7k
-
160 @ 5mA, 10V
250mV @ 1mA, 10mA
500nA
-
202mW
Surface Mount
SC-70, SOT-323
SC-70-3 (SOT323)
PDTC114YE,115
NXP

TRANS PREBIAS NPN 150MW SC75

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SC-75
Paket: SC-75, SOT-416
Lager4.528
100mA
50V
10k
47k
100 @ 5mA, 5V
100mV @ 250µA, 5mA
1µA
-
150mW
Surface Mount
SC-75, SOT-416
SC-75
PDTA143TE,115
NXP

TRANS PREBIAS PNP 150MW SC75

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: -
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SC-75
Paket: SC-75, SOT-416
Lager2.544
100mA
50V
4.7k
-
200 @ 1mA, 5V
150mV @ 250µA, 5mA
100nA (ICBO)
-
150mW
Surface Mount
SC-75, SOT-416
SC-75
BCR162E6327HTSA1
Infineon Technologies

TRANS PREBIAS PNP 200MW SOT23-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager6.880
100mA
50V
4.7k
4.7k
20 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
NSBC123EF3T5G
ON Semiconductor

TRANS PREBIAS DUAL NPN

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 2.2k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
Paket: SOT-1123
Lager3.600
100mA
50V
2.2k
2.2k
8 @ 5mA, 10V
250mV @ 5mA, 10mA
500nA
-
254mW
Surface Mount
SOT-1123
SOT-1123
PDTC143EQAZ
Nexperia USA Inc.

TRANS PREBIAS NPN 3DFN

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 230MHz
  • Power - Max: 280mW
  • Mounting Type: Surface Mount
  • Package / Case: 3-XDFN Exposed Pad
  • Supplier Device Package: DFN1010D-3
Paket: 3-XDFN Exposed Pad
Lager5.744
100mA
50V
4.7k
4.7k
30 @ 10mA, 5V
150mV @ 500µA, 10mA
1µA
230MHz
280mW
Surface Mount
3-XDFN Exposed Pad
DFN1010D-3
DTA114TCA-TP
Micro Commercial Co

TRANS PREBIAS PNP 200MW SOT23

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
Paket: TO-236-3, SC-59, SOT-23-3
Lager4.288
100mA
50V
10k
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
500nA (ICBO)
250MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
PDTC115TM,315
Nexperia USA Inc.

TRANS PREBIAS NPN 250MW SOT883

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 100k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: DFN1006-3
Paket: SC-101, SOT-883
Lager2.176
100mA
50V
100k
-
100 @ 1mA, 5V
150mV @ 250µA, 5mA
1µA
-
250mW
Surface Mount
SC-101, SOT-883
DFN1006-3
MMUN2235LT1G
ON Semiconductor

TRANS PREBIAS NPN 0.246W SOT-23

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 246mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
Paket: TO-236-3, SC-59, SOT-23-3
Lager7.232
100mA
50V
2.2k
47k
80 @ 5mA, 10V
250mV @ 1mA, 10mA
500nA
-
246mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
DTC043EUBTL
Rohm Semiconductor

TRANS PREBIAS NPN 50V UMT3F

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: UMT3F
Paket: SC-85
Lager2.208
100mA
50V
4.7k
4.7k
20 @ 5mA, 10V
150mV @ 500µA, 5mA
-
250MHz
200mW
Surface Mount
SC-85
UMT3F
DTA024EMT2L
Rohm Semiconductor

TRANS PREBIAS PNP 50V VMT3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 30mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VMT3
Paket: SOT-723
Lager78.288
30mA
50V
22k
22k
60 @ 5mA, 10V
150mV @ 500µA, 5mA
-
250MHz
150mW
Surface Mount
SOT-723
VMT3
DDTA143FUA-7-F
Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT323

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
Paket: SC-70, SOT-323
Lager6.640
100mA
50V
4.7k
22k
68 @ 10mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
200mW
Surface Mount
SC-70, SOT-323
SOT-323
hot DTC113ZUAT106
Rohm Semiconductor

TRANS PREBIAS NPN 200MW UMT3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 1k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: UMT3
Paket: SC-70, SOT-323
Lager42.804
100mA
50V
1k
10k
33 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
200mW
Surface Mount
SC-70, SOT-323
UMT3
RN1405,LF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.2W S-MINI

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
Paket: TO-236-3, SC-59, SOT-23-3
Lager24.078
100mA
50V
2.2k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
DTC143EUBTL
Rohm Semiconductor

TRANS PREBIAS NPN 200MW UMT3F

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: UMT3F
Paket: SC-85
Lager29.658
100mA
50V
4.7k
4.7k
30 @ 10mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
200mW
Surface Mount
SC-85
UMT3F
DRA2124T0L
Panasonic Electronic Components

TRANS PREBIAS PNP 200MW MINI3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: Mini3-G3-B
Paket: TO-236-3, SC-59, SOT-23-3
Lager66.456
100mA
50V
22k
-
160 @ 5mA, 10V
250mV @ 500µA, 10mA
500nA
-
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
Mini3-G3-B
hot DRC2114E0L
Panasonic Electronic Components

TRANS PREBIAS NPN 200MW MINI3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: Mini3-G3-B
Paket: TO-236-3, SC-59, SOT-23-3
Lager71.460
100mA
50V
10k
10k
35 @ 5mA, 10V
250mV @ 500µA, 10mA
500nA
-
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
Mini3-G3-B
hot DDTD142JU-7-F
Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT323

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 470
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
Paket: SC-70, SOT-323
Lager648.000
500mA
50V
470
10k
56 @ 50mA, 5V
300mV @ 2.5mA, 50mA
500nA
200MHz
200mW
Surface Mount
SC-70, SOT-323
SOT-323
RN1112MFV-L3F
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 22 kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: -
  • Power - Max: 150 mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
Paket: -
Lager24.000
100 mA
50 V
22 kOhms
-
120 @ 1mA, 5V
300mV @ 500µA, 5mA
100nA (ICBO)
-
150 mW
Surface Mount
SOT-723
VESM
PDTB123YT-QR
Nexperia USA Inc.

TRANS PREBIAS PNP 50V TO236AB

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 2.2 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 250 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
Paket: -
Request a Quote
500 mA
50 V
2.2 kOhms
10 kOhms
70 @ 50mA, 5V
300mV @ 2.5mA, 50mA
500nA
-
250 mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
DTC144EEFRATL
Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A EMT3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 47 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 150 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: EMT3
Paket: -
Lager8.034
100 mA
50 V
47 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA
250 MHz
150 mW
Surface Mount
SC-75, SOT-416
EMT3
RN1311-LXHF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 10 kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
Paket: -
Lager9.000
100 mA
50 V
10 kOhms
-
120 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
250 MHz
100 mW
Surface Mount
SC-70, SOT-323
SC-70
DTC114EE3TL
Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A EMT3

  • Transistor Type: NPN - Pre-Biased + Diode
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 2.2 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250 MHz
  • Power - Max: 150 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: EMT3
Paket: -
Lager8.655
100 mA
50 V
2.2 kOhms
10 kOhms
33 @ 10mA, 5V
300mV @ 500µA, 10mA
500nA (ICBO)
250 MHz
150 mW
Surface Mount
SC-75, SOT-416
EMT3
RN2309-LXHF
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 47 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
Paket: -
Lager11.925
100 mA
50 V
47 kOhms
22 kOhms
70 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
200 MHz
100 mW
Surface Mount
SC-70, SOT-323
SC-70
RN1403-LXHF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SMINI

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 22 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
Paket: -
Lager18.000
100 mA
50 V
22 kOhms
22 kOhms
70 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250 MHz
200 mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
FN4A4P-T1B-A
Renesas Electronics Corporation

0.1A, PNP

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 10 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 95 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: -
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
Paket: -
Request a Quote
100 mA
50 V
10 kOhms
47 kOhms
95 @ 50mA, 5V
200mV @ 250µA, 5mA
100nA (ICBO)
-
200 mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59
RN1412-LF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SMINI

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 22 kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
Paket: -
Lager300
100 mA
50 V
22 kOhms
-
120 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
250 MHz
200 mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
PDTC114EU-ZLF
Nexperia USA Inc.

TRANS PREBIAS

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Resistor - Base (R1) (Ohms): -
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: -
  • Power - Max: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
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