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Transistoren - Bipolar (BJT) - Einzeln

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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BC548_J35Z
Fairchild/ON Semiconductor

TRANS NPN 30V 0.1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager7.728
100mA
30V
600mV @ 5mA, 100mA
15nA (ICBO)
110 @ 2mA, 5V
500mW
300MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PVR100AD-B5V0,115
NXP

TRANS NPN 45V 0.1A 6TSOP

  • Transistor Type: NPN + Zener
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
  • Power - Max: 300mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
Paket: SC-74, SOT-457
Lager6.032
100mA
45V
-
100nA (ICBO)
160 @ 100mA, 1V
300mW
-
150°C (TJ)
Surface Mount
SC-74, SOT-457
6-TSOP
STX117-AP
STMicroelectronics

TRANS PNP 100V 2A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
  • Current - Collector Cutoff (Max): 2mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
  • Power - Max: 1.2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92AP
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager3.520
2A
100V
2.5V @ 8mA, 2A
2mA
1000 @ 1A, 4V
1.2W
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92AP
BF420ZL1G
ON Semiconductor

TRANS NPN 300V 0.05A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
  • Power - Max: 830mW
  • Frequency - Transition: 60MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager3.552
50mA
300V
500mV @ 2mA, 20mA
10nA (ICBO)
50 @ 25mA, 20V
830mW
60MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BC548BZL1
ON Semiconductor

TRANS NPN 30V 0.1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 15nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager4.384
100mA
30V
250mV @ 500µA, 10mA
15nA
200 @ 2mA, 5V
625mW
300MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BC328TAR
Fairchild/ON Semiconductor

TRANS PNP 25V 0.8A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager4.656
800mA
25V
700mV @ 50mA, 500mA
100nA
100 @ 100mA, 1V
625mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
2N4401_D81Z
Fairchild/ON Semiconductor

TRANS NPN 40V 0.6A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager4.096
600mA
40V
750mV @ 50mA, 500mA
-
100 @ 150mA, 1V
625mW
250MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BC548ABU
Fairchild/ON Semiconductor

TRANS NPN 30V 0.1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA)
Lager6.592
100mA
30V
600mV @ 5mA, 100mA
15nA (ICBO)
110 @ 2mA, 5V
500mW
300MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
MPS4250ARLRMG
ON Semiconductor

TRANS PNP 40V 0.05A TO92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager4.560
50mA
40V
250mV @ 500µA, 10mA
10nA (ICBO)
250 @ 10mA, 5V
625mW
-
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot MSB709-RT1
ON Semiconductor

TRANS PNP 45V 0.1A SC59

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
  • Power - Max: 200mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
Paket: TO-236-3, SC-59, SOT-23-3
Lager906.276
100mA
45V
500mV @ 10mA, 100mA
100nA
210 @ 2mA, 10V
200mW
-
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59
CZTA64 TR
Central Semiconductor Corp

TRANS PNP DARL 30V 0.5A SOT223

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 125MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
Paket: TO-261-4, TO-261AA
Lager4.880
500mA
30V
1.5V @ 100µA, 100mA
100nA (ICBO)
20000 @ 100mA, 5V
2W
125MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
hot DVRN6056-7-F
Diodes Incorporated

TRANS NPN 40V 0.6A SOT-26

  • Transistor Type: NPN + Zener Diode (Isolated)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
  • Power - Max: 300mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
Paket: SOT-23-6
Lager954.660
600mA
40V
750mV @ 50mA, 500mA
-
100 @ 150mA, 1V
300mW
250MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
DSA2401R0L
Panasonic Electronic Components

TRANS PNP 10V 0.5A MINI3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 8mA, 400mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 500mA, 2V
  • Power - Max: 200mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: Mini3-G3-B-B
Paket: TO-236-3, SC-59, SOT-23-3
Lager6.944
500mA
10V
300mV @ 8mA, 400mA
100nA (ICBO)
130 @ 500mA, 2V
200mW
250MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
Mini3-G3-B-B
KSA1013OTA
Fairchild/ON Semiconductor

TRANS PNP 160V 1A TO-92L

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92L
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager3.552
1A
160V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 200mA, 5V
900mW
50MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92L
NSVBC849BLT1G
onsemi

TRANSISTOR

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 300 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
Paket: -
Request a Quote
100 mA
30 V
600mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
300 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
JANSM2N3635UB-TR
Microchip Technology

TRANS PNP 140V 1A UB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 140 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
  • Power - Max: 1.5 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UB
Paket: -
Request a Quote
1 A
140 V
600mV @ 5mA, 50mA
10µA
100 @ 10mA, 10V
1.5 W
-
-65°C ~ 200°C (TJ)
Surface Mount
4-SMD, No Lead
UB
BCP56-ZLX
Nexperia USA Inc.

TRANS NPN 80V 1A SOT223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
  • Power - Max: 1.35 W
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
Paket: -
Request a Quote
1 A
80 V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
1.35 W
180MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
JANSF2N2369AUA
Microchip Technology

TRANS NPN 15V UA

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 15 V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
  • Power - Max: 360 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UA
Paket: -
Request a Quote
-
15 V
450mV @ 10mA, 100mA
400nA
20 @ 100mA, 1V
360 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
4-SMD, No Lead
UA
S9014
EVVO

TRANS NPN 50V SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
  • Power - Max: 200 mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
Paket: -
Lager8.928
100 mA
45 V
300mV @ 5mA, 100mA
1µA
200 @ 1mA, 5V
200 mW
150MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
2N6351E3
Microchip Technology

POWER BJT

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 150 V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 5A
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 5V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C
  • Mounting Type: Through Hole
  • Package / Case: TO-205AC, TO-33-4 Metal Can
  • Supplier Device Package: TO-33
Paket: -
Request a Quote
5 A
150 V
2.5V @ 10mA, 5A
1µA
1000 @ 5A, 5V
1 W
-
-65°C ~ 200°C
Through Hole
TO-205AC, TO-33-4 Metal Can
TO-33
JANS2N5153L
Microchip Technology

TRANS PNP 80V 2A TO5

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5AA
Paket: -
Request a Quote
2 A
80 V
1.5V @ 500mA, 5A
1mA
70 @ 2.5A, 5V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5AA
BC846BHE3-13P
Micro Commercial Co

BIPOLAR TRANSISTORS

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 65 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 200 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
Paket: -
Request a Quote
100 mA
65 V
500mV @ 5mA, 100mA
100nA
200 @ 2mA, 5V
200 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
JANSD2N5152
Microchip Technology

RH POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
Paket: -
Request a Quote
2 A
80 V
1.5V @ 500mA, 5A
50µA
30 @ 2.5A, 5V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
BUD43B-001
onsemi

SWITCHMODE NPN SILICON PLANAR PO

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
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-
-
-
-
-
-
-
-
-
-
-
2SC3114S
Sanyo

NPN EPITAXIAL PLANAR SILICON

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 1mA, 6V
  • Power - Max: 400 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: 3-NP
Paket: -
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150 mA
50 V
500mV @ 5mA, 50mA
100nA (ICBO)
140 @ 1mA, 6V
400 mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
3-NP
2N3773V
Harris Corporation

SMALL SIGNAL BIPOLAR TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
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-
-
-
-
-
-
-
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BC817-16_R1_00001
Panjit International Inc.

TRANS NPN 45V 0.5A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 330 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
Paket: -
Lager2.370
500 mA
45 V
700mV @ 50mA, 500mA
100nA (ICBO)
100 @ 100mA, 1V
330 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
MMSS8050W-H-TP
Micro Commercial Co

Interface

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5 A
  • Voltage - Collector Emitter Breakdown (Max): 25 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
  • Power - Max: 200 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
Paket: -
Request a Quote
1.5 A
25 V
500mV @ 80mA, 800mA
100nA
120 @ 100mA, 1V
200 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323