Page 146 - Transistoren - Bipolar (BJT) - Einzeln | Diskrete Halbleiterprodukte

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SD2695,T6F(M	Toshiba Semiconductor and Storage	TRANS NPN 2A 60V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Paket: TO-226-3, TO-92-3 Long Body	Lager7.824	2A	60V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
BUK9Y29-40E/CX	NXP	MOSFET N-CH LFPAK Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Lager3.136	-	-	-	-	-	-	-	-	-	-	-
BDW74C-S	Bourns Inc.	TRANS PNP DARL 100V 8A Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	Paket: TO-220-3	Lager7.664	8A	100V	4V @ 80mA, 8A	500µA	750 @ 3A, 3V	2W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
MPS6521RLRAG	ON Semiconductor	TRANS NPN 25V 0.1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V Power - Max: 625mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Lager7.360	100mA	25V	500mV @ 5mA, 50mA	50nA (ICBO)	300 @ 2mA, 10V	625mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MJD32CRL	ON Semiconductor	TRANS PNP 100V 3A DPAK Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Power - Max: 1.56W Frequency - Transition: 3MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK-3	Paket: TO-252-3, DPak (2 Leads + Tab), SC-63	Lager21.600	3A	100V	1.2V @ 375mA, 3A	50µA	10 @ 3A, 4V	1.56W	3MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK-3
2SB1238TV2Q	Rohm Semiconductor	TRANS PNP 80V 0.7A ATV Transistor Type: PNP Current - Collector (Ic) (Max): 700mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SIP Supplier Device Package: ATV	Paket: 3-SIP	Lager30.000	700mA	80V	400mV @ 50mA, 500mA	500nA (ICBO)	120 @ 100mA, 3V	1W	100MHz	150°C (TJ)	Through Hole	3-SIP	ATV
MJE700STU	Fairchild/ON Semiconductor	TRANS PNP DARL 60V 4A TO126 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Power - Max: 40W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	Paket: TO-225AA, TO-126-3	Lager7.408	4A	60V	2.5V @ 30mA, 1.5A	100µA	750 @ 1.5A, 3V	40W	-	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
ZTX749STOA	Diodes Incorporated	TRANS PNP 25V 2A E-LINE Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V Power - Max: 1W Frequency - Transition: 160MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	Paket: E-Line-3, Formed Leads	Lager72.804	2A	25V	500mV @ 200mA, 2A	100nA (ICBO)	100 @ 1A, 2V	1W	160MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
BCW30	Fairchild/ON Semiconductor	TRANS PNP 32V 0.5A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 32V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	Paket: TO-236-3, SC-59, SOT-23-3	Lager8.198.472	500mA	32V	300mV @ 500µA, 10mA	100nA (ICBO)	215 @ 2mA, 5V	350mW	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
2N3904_D81Z	Fairchild/ON Semiconductor	TRANS NPN 40V 0.2A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 625mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Lager3.744	200mA	40V	300mV @ 5mA, 50mA	-	100 @ 10mA, 1V	625mW	300MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BC635	Fairchild/ON Semiconductor	TRANS NPN 45V 1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	Paket: TO-226-3, TO-92-3 (TO-226AA)	Lager6.240.000	1A	45V	500mV @ 50mA, 500mA	100nA (ICBO)	40 @ 150mA, 2V	1W	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2SD1815T-E	ON Semiconductor	TRANS NPN 100V 3A TP Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 1.5A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 5V Power - Max: 1W Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TP	Paket: TO-251-3 Short Leads, IPak, TO-251AA	Lager3.648	3A	100V	400mV @ 150mA, 1.5A	1µA (ICBO)	70 @ 500mA, 5V	1W	180MHz	150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TP
2SD2679T100	Rohm Semiconductor	TRANS NPN 30V 2A MPT3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 370mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V Power - Max: 500mW Frequency - Transition: 280MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3	Paket: TO-243AA	Lager5.264	2A	30V	370mV @ 75mA, 1.5A	100nA (ICBO)	270 @ 200mA, 2V	500mW	280MHz	150°C (TJ)	Surface Mount	TO-243AA	MPT3
MCH6122-TL-H	ON Semiconductor	TRANS PNP 30V 3A MCPH6 Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 180mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 400MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-MCPH	Paket: 6-SMD, Flat Leads	Lager26.604	3A	30V	180mV @ 75mA, 1.5A	100nA (ICBO)	200 @ 500mA, 2V	1W	400MHz	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	6-MCPH
BC550B B1G	TSC America Inc.	TRANSISTOR, NPN, 45V, 0.1A, 200A Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	Paket: TO-226-3, TO-92-3 (TO-226AA)	Lager4.704	100mA	45V	-	15nA (ICBO)	200 @ 2mA, 5V	500mW	-	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
BC856B-HF	Comchip Technology	TRANS PNP 65V 100A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2.2mA, 5V Power - Max: 250mW Frequency - Transition: 100MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	Paket: TO-236-3, SC-59, SOT-23-3	Lager2.192	100mA	65V	650mV @ 5mA, 100mA	15nA (ICBO)	220 @ 2.2mA, 5V	250mW	100MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
D44VH10G	ON Semiconductor	TRANS NPN 80V 15A TO220AB Transistor Type: NPN Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 400mV @ 400mA, 8A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 1V Power - Max: 83W Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Paket: TO-220-3	Lager217.320	15A	80V	400mV @ 400mA, 8A	-	20 @ 4A, 1V	83W	50MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
FCX491TA	Diodes Incorporated	TRANS NPN 60V 1A SOT-89 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	Paket: TO-243AA	Lager76.188	1A	60V	500mV @ 100mA, 1A	100nA	100 @ 500mA, 5V	1W	150MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
2SC4548-D-TP	Micro Commercial Co	TRANS NPN 400V 0.2A SOT89 Transistor Type: NPN Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 400 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V Power - Max: 500 mW Frequency - Transition: 70MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	Paket: -	Request a Quote	200 mA	400 V	600mV @ 5mA, 50mA	100nA (ICBO)	60 @ 50mA, 10V	500 mW	70MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89
2SC6000-TE16L1-NQ	Toshiba Semiconductor and Storage	2SC6000(TE16L1,NQ) Transistor Type: NPN Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 180mV @ 83mA, 2.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2.5A, 2V Power - Max: 20 W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: PW-MOLD	Paket: -	Request a Quote	7 A	50 V	180mV @ 83mA, 2.5A	100nA (ICBO)	250 @ 2.5A, 2V	20 W	-	150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	PW-MOLD
2SC5980-TL-E	Sanyo	NPN EPITAXIAL PLANAR SILICON Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANHCB2N3700	Microchip Technology	TRANS NPN 80V 1A TO18 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	Paket: -	Request a Quote	1 A	80 V	500mV @ 50mA, 500mA	10nA	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
2N2108	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 2V @ 10µA, 200µA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	Paket: -	Request a Quote	500 mA	60 V	2V @ 10µA, 200µA	-	-	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2N4914	Microchip Technology	NPN SILICON TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N6385	Microchip Technology	TRANS NPN DARL 80V 10A TO204AA Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A Current - Collector Cutoff (Max): 1mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V Power - Max: 6 W Frequency - Transition: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AA (TO-3)	Paket: -	Request a Quote	10 A	80 V	3V @ 100mA, 10A	1mA (ICBO)	1000 @ 5A, 3V	6 W	-	-55°C ~ 175°C (TJ)	Through Hole	TO-204AA, TO-3	TO-204AA (TO-3)
2N6357	Microchip Technology	POWER BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NTE272	NTE Electronics, Inc	TRANS NPN DARL 40V 2A TO202N Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-202 Long Tab Supplier Device Package: TO-202N	Paket: -	Request a Quote	2 A	40 V	1.5V @ 2mA, 1A	100nA (ICBO)	25000 @ 200mA, 5V	1 W	-	-55°C ~ 150°C (TJ)	Through Hole	TO-202 Long Tab	TO-202N
JANSD2N3498	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	Paket: -	Request a Quote	500 mA	100 V	600mV @ 30mA, 300mA	10µA (ICBO)	40 @ 150mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
2SC4783-T1-A	Renesas Electronics Corporation	TRANSISTOR NPN USM SC-75 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
8550SS-C-BP	Micro Commercial Co	TRANS PNP 25V 1.5A TO92 Transistor Type: PNP Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 25 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Power - Max: 1 W Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	Paket: -	Request a Quote	1.5 A	25 V	500mV @ 80mA, 800mA	100nA	120 @ 100mA, 1V	1 W	100MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92

2SD2695,T6F(M

Toshiba Semiconductor and Storage

TRANS NPN 2A 60V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

Paket: TO-226-3, TO-92-3 Long Body

Lager7.824

2A

60V

1.5V @ 1mA, 1A

10µA (ICBO)

2000 @ 1A, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

BUK9Y29-40E/CX

NXP

MOSFET N-CH LFPAK

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Lager3.136

-

BDW74C-S

Bourns Inc.

TRANS PNP DARL 100V 8A

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

Paket: TO-220-3

Lager7.664

8A

100V

4V @ 80mA, 8A

500µA

750 @ 3A, 3V

2W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

MPS6521RLRAG

ON Semiconductor

TRANS NPN 25V 0.1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Lager7.360

100mA

25V

500mV @ 5mA, 50mA

50nA (ICBO)

300 @ 2mA, 10V

625mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MJD32CRL

ON Semiconductor

TRANS PNP 100V 3A DPAK

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Power - Max: 1.56W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK-3

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

Lager21.600

3A

100V

1.2V @ 375mA, 3A

50µA

10 @ 3A, 4V

1.56W

3MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK-3

2SB1238TV2Q

Rohm Semiconductor

TRANS PNP 80V 0.7A ATV

Transistor Type: PNP
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: ATV

Paket: 3-SIP

Lager30.000

700mA

80V

400mV @ 50mA, 500mA

500nA (ICBO)

120 @ 100mA, 3V

1W

100MHz

150°C (TJ)

Through Hole

3-SIP

ATV

MJE700STU

Fairchild/ON Semiconductor

TRANS PNP DARL 60V 4A TO126

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Power - Max: 40W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

Paket: TO-225AA, TO-126-3

Lager7.408

4A

60V

2.5V @ 30mA, 1.5A

100µA

750 @ 1.5A, 3V

40W

-

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

ZTX749STOA

Diodes Incorporated

TRANS PNP 25V 2A E-LINE

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Power - Max: 1W
Frequency - Transition: 160MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

Paket: E-Line-3, Formed Leads

Lager72.804

2A

25V

500mV @ 200mA, 2A

100nA (ICBO)

100 @ 1A, 2V

1W

160MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

BCW30

Fairchild/ON Semiconductor

TRANS PNP 32V 0.5A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

Lager8.198.472

500mA

32V

300mV @ 500µA, 10mA

100nA (ICBO)

215 @ 2mA, 5V

350mW

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

2N3904_D81Z

Fairchild/ON Semiconductor

TRANS NPN 40V 0.2A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Lager3.744

200mA

40V

300mV @ 5mA, 50mA

-

100 @ 10mA, 1V

625mW

300MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BC635

Fairchild/ON Semiconductor

TRANS NPN 45V 1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

Paket: TO-226-3, TO-92-3 (TO-226AA)

Lager6.240.000

1A

45V

500mV @ 50mA, 500mA

100nA (ICBO)

40 @ 150mA, 2V

1W

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

2SD1815T-E

ON Semiconductor

TRANS NPN 100V 3A TP

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 5V
Power - Max: 1W
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TP

Paket: TO-251-3 Short Leads, IPak, TO-251AA

Lager3.648

3A

100V

400mV @ 150mA, 1.5A

1µA (ICBO)

70 @ 500mA, 5V

1W

180MHz

150°C (TJ)

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

TP

2SD2679T100

Rohm Semiconductor

TRANS NPN 30V 2A MPT3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 370mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Power - Max: 500mW
Frequency - Transition: 280MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3

Paket: TO-243AA

Lager5.264

2A

30V

370mV @ 75mA, 1.5A

100nA (ICBO)

270 @ 200mA, 2V

500mW

280MHz

150°C (TJ)

Surface Mount

TO-243AA

MPT3

MCH6122-TL-H

ON Semiconductor

TRANS PNP 30V 3A MCPH6

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 180mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 400MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-MCPH

Paket: 6-SMD, Flat Leads

Lager26.604

3A

30V

180mV @ 75mA, 1.5A

100nA (ICBO)

200 @ 500mA, 2V

1W

400MHz

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

6-MCPH

BC550B B1G

TSC America Inc.

TRANSISTOR, NPN, 45V, 0.1A, 200A

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

Paket: TO-226-3, TO-92-3 (TO-226AA)

Lager4.704

100mA

45V

-

15nA (ICBO)

200 @ 2mA, 5V

500mW

-

-65°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

BC856B-HF

Comchip Technology

TRANS PNP 65V 100A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2.2mA, 5V
Power - Max: 250mW
Frequency - Transition: 100MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

Paket: TO-236-3, SC-59, SOT-23-3

Lager2.192

100mA

65V

650mV @ 5mA, 100mA

15nA (ICBO)

220 @ 2.2mA, 5V

250mW

100MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

D44VH10G

ON Semiconductor

TRANS NPN 80V 15A TO220AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 400mA, 8A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 1V
Power - Max: 83W
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

Paket: TO-220-3

Lager217.320

15A

80V

400mV @ 400mA, 8A

-

20 @ 4A, 1V

83W

50MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

FCX491TA

Diodes Incorporated

TRANS NPN 60V 1A SOT-89

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

Paket: TO-243AA

Lager76.188

1A

60V

500mV @ 100mA, 1A

100nA

100 @ 500mA, 5V

1W

150MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

2SC4548-D-TP

Micro Commercial Co

TRANS NPN 400V 0.2A SOT89

Transistor Type: NPN
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V
Power - Max: 500 mW
Frequency - Transition: 70MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

Paket: -

Request a Quote

200 mA

400 V

600mV @ 5mA, 50mA

100nA (ICBO)

60 @ 50mA, 10V

500 mW

70MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89

2SC6000-TE16L1-NQ

Toshiba Semiconductor and Storage

2SC6000(TE16L1,NQ)

Transistor Type: NPN
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 180mV @ 83mA, 2.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2.5A, 2V
Power - Max: 20 W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: PW-MOLD

Paket: -

Request a Quote

7 A

50 V

180mV @ 83mA, 2.5A

100nA (ICBO)

250 @ 2.5A, 2V

20 W

-

150°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

PW-MOLD

2SC5980-TL-E

Sanyo

NPN EPITAXIAL PLANAR SILICON

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

JANHCB2N3700

Microchip Technology

TRANS NPN 80V 1A TO18

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

Paket: -

Request a Quote

1 A

80 V

500mV @ 50mA, 500mA

10nA

100 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

2N2108

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 2V @ 10µA, 200µA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

Paket: -

Request a Quote

500 mA

60 V

2V @ 10µA, 200µA

-

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

2N4914

Microchip Technology

NPN SILICON TRANSISTOR

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

2N6385

Microchip Technology

TRANS NPN DARL 80V 10A TO204AA

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Power - Max: 6 W
Frequency - Transition: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)

Paket: -

Request a Quote

10 A

80 V

3V @ 100mA, 10A

1mA (ICBO)

1000 @ 5A, 3V

6 W

-

-55°C ~ 175°C (TJ)

Through Hole

TO-204AA, TO-3

TO-204AA (TO-3)

2N6357

Microchip Technology

POWER BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

NTE272

NTE Electronics, Inc

TRANS NPN DARL 40V 2A TO202N

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-202 Long Tab
Supplier Device Package: TO-202N

Paket: -

Request a Quote

2 A

40 V

1.5V @ 2mA, 1A

100nA (ICBO)

25000 @ 200mA, 5V

1 W

-

-55°C ~ 150°C (TJ)

Through Hole

TO-202 Long Tab

TO-202N

JANSD2N3498

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

Paket: -

Request a Quote

500 mA

100 V

600mV @ 30mA, 300mA

10µA (ICBO)

40 @ 150mA, 10V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

2SC4783-T1-A

Renesas Electronics Corporation

TRANSISTOR NPN USM SC-75

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

8550SS-C-BP

Micro Commercial Co

TRANS PNP 25V 1.5A TO92

Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Power - Max: 1 W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

Paket: -

Request a Quote

1.5 A

25 V

500mV @ 80mA, 800mA

100nA

120 @ 100mA, 1V

1 W

100MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92