Page 159 - Transistoren - Bipolar (BJT) - Einzeln | Diskrete Halbleiterprodukte | Heisener Electronics
Kontaktieren Sie uns
SalesDept@heisener.com +86-755-83210559-836
Language Translation

* Please refer to the English Version as our Official Version.

Transistoren - Bipolar (BJT) - Einzeln

Aufzeichnungen 20.307
Page  159/726
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BDW73A-S
Bourns Inc.

TRANS NPN DARL 60V 8A

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
Paket: TO-220-3
Lager6.448
8A
60V
4V @ 80mA, 8A
500µA
750 @ 3A, 3V
2W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
KSD1273Q
Fairchild/ON Semiconductor

TRANS NPN 60V 3A TO-220F

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 2A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 500mA, 4V
  • Power - Max: 2W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
Paket: TO-220-3 Full Pack
Lager3.552
3A
60V
1V @ 50mA, 2A
100µA
500 @ 500mA, 4V
2W
30MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
MJE802STU
Fairchild/ON Semiconductor

TRANS NPN DARL 80V 4A TO126

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
  • Power - Max: 40W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
Paket: TO-225AA, TO-126-3
Lager4.464
4A
80V
2.5V @ 30mA, 1.5A
100µA
750 @ 1.5A, 3V
40W
-
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
BUY69A
STMicroelectronics

TRANS NPN 400V 10A TO-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 3.3V @ 2.5A, 8A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2.5A, 10V
  • Power - Max: 100W
  • Frequency - Transition: 10MHz
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
Paket: TO-204AA, TO-3
Lager4.032
10A
400V
3.3V @ 2.5A, 8A
1mA
15 @ 2.5A, 10V
100W
10MHz
200°C (TJ)
Chassis Mount
TO-204AA, TO-3
TO-3
BC32716
Fairchild/ON Semiconductor

TRANS PNP 45V 0.8A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA)
Lager4.624
800mA
45V
700mV @ 50mA, 500mA
100nA
100 @ 100mA, 1V
625mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot BC640
Fairchild/ON Semiconductor

TRANS PNP 80V 1A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA)
Lager6.120.000
1A
80V
500mV @ 50mA, 500mA
100nA (ICBO)
40 @ 150mA, 2V
1W
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot ZX5T869GTA
Diodes Incorporated

TRANS NPN 25V 7A SOT-223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 7A
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 220mV @ 150mA, 6.5A
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 1V
  • Power - Max: 3W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
Paket: TO-261-4, TO-261AA
Lager91.020
7A
25V
220mV @ 150mA, 6.5A
20nA (ICBO)
300 @ 1A, 1V
3W
150MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
hot 2SB1443TV2Q
Rohm Semiconductor

TRANS PNP 50V 2A ATV

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 3-SIP
  • Supplier Device Package: ATV
Paket: 3-SIP
Lager269.664
2A
50V
350mV @ 50mA, 1A
100nA (ICBO)
120 @ 500mA, 2V
1W
200MHz
150°C (TJ)
Through Hole
3-SIP
ATV
BCX5316H6327XTSA1
Infineon Technologies

TRANSISTOR AF SOT89-4

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 2W
  • Frequency - Transition: 125MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PG-SOT89
Paket: TO-243AA
Lager7.664
1A
80V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
2W
125MHz
150°C (TJ)
Surface Mount
TO-243AA
PG-SOT89
2N3725UB
Microsemi Corporation

TRANS NPN 50V 500MA

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager2.368
-
-
-
-
-
-
-
-
-
-
-
ZTX558STZ
Diodes Incorporated

TRANS PNP 400V 0.2A E-LINE

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
Paket: E-Line-3, Formed Leads
Lager5.808
200mA
400V
500mV @ 6mA, 50mA
100nA
100 @ 50mA, 10V
1W
50MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
FMMT493QTA
Diodes Incorporated

TRANS NPN 100V 1A SOT23-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
Paket: TO-236-3, SC-59, SOT-23-3
Lager5.152
1A
100V
600mV @ 100mA, 1A
100nA
100 @ 250mA, 10V
500mW
150MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot FSB560
Fairchild/ON Semiconductor

TRANS NPN 60V 2A SSOT-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
  • Power - Max: 500mW
  • Frequency - Transition: 75MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-SSOT
Paket: TO-236-3, SC-59, SOT-23-3
Lager472.140
2A
60V
350mV @ 200mA, 2A
100nA (ICBO)
100 @ 500mA, 2V
500mW
75MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-SSOT
KSA1013YTA
Fairchild/ON Semiconductor

TRANS PNP 160V 1A TO-92L

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager5.152
1A
160V
1.5V @ 50mA, 500mA
1µA (ICBO)
160 @ 200mA, 5V
900mW
50MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
2N3393
Central Semiconductor Corp

TRANS NPN 25V TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 2mA, 4.5V
  • Power - Max: -
  • Frequency - Transition: 120MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
Paket: TO-226-3, TO-92-3 (TO-226AA)
Lager33.060
-
25V
-
100nA (ICBO)
90 @ 2mA, 4.5V
-
120MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
hot MJD31CT4G
ON Semiconductor

TRANS NPN 100V 3A DPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
  • Power - Max: 1.56W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager1.830.480
3A
100V
1.2V @ 375mA, 3A
50µA
10 @ 3A, 4V
1.56W
3MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
BC807K-16VL
Nexperia USA Inc.

TRANS PNP 45V 0.5A TO236AB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 250 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
Paket: -
Request a Quote
500 mA
45 V
700mV @ 50mA, 500mA
100nA (ICBO)
100 @ 100mA, 1V
250 mW
80MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
BUK9MPP-65PLL-518
Nexperia USA Inc.

TRANS

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
JANSF2N4449
Microchip Technology

TRANS NPN 20V TO46

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 20 V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
  • Power - Max: 360 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AB, TO-46-3 Metal Can
  • Supplier Device Package: TO-46 (TO-206AB)
Paket: -
Request a Quote
-
20 V
450mV @ 10mA, 100mA
400nA
20 @ 100mA, 1V
360 mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AB, TO-46-3 Metal Can
TO-46 (TO-206AB)
2SC4217E
onsemi

POWER BIPOLAR TRANSISTOR NPN

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200 mA
  • Voltage - Collector Emitter Breakdown (Max): 300 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
  • Power - Max: 1.5 W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126ML
Paket: -
Request a Quote
200 mA
300 V
600mV @ 2mA, 20mA
100nA (ICBO)
100 @ 10mA, 10V
1.5 W
70MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126ML
FX513-N-TL-E
onsemi

BIP PNP+PNP 4A 50V

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2N1482
Microchip Technology

TRANS NPN 55V 1.5A TO5

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5 A
  • Voltage - Collector Emitter Breakdown (Max): 55 V
  • Vce Saturation (Max) @ Ib, Ic: 750mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 4V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
Paket: -
Request a Quote
1.5 A
55 V
750mV @ 10mA, 200mA
5µA (ICBO)
35 @ 200mA, 4V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5
2N5346
Microchip Technology

POWER BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 7 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 60 W
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Stud Mount
  • Package / Case: TO-210AA, TO-59-4, Stud
  • Supplier Device Package: TO-59
Paket: -
Request a Quote
7 A
80 V
-
-
-
60 W
-
-
Stud Mount
TO-210AA, TO-59-4, Stud
TO-59
JANSF2N2369AU-TR
Microchip Technology

RH DUAL - SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 15 V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: U
Paket: -
Request a Quote
-
15 V
450mV @ 10mA, 100mA
400nA
40 @ 10mA, 1V
500 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
6-SMD, No Lead
U
2N6324
Microchip Technology

TRANS PNP 200V 30A TO63

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 30 A
  • Voltage - Collector Emitter Breakdown (Max): 200 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 350 W
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Stud Mount
  • Package / Case: TO-211MB, TO-63-4, Stud
  • Supplier Device Package: TO-63
Paket: -
Request a Quote
30 A
200 V
-
-
-
350 W
-
-
Stud Mount
TO-211MB, TO-63-4, Stud
TO-63
D44T8
Solid State Inc.

TRANS NPN 300V 2A TO220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 300 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V
  • Power - Max: 31.2 W
  • Frequency - Transition: 15MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
Paket: -
Request a Quote
2 A
300 V
1V @ 50mA, 500mA
10µA
150 @ 500mA, 10V
31.2 W
15MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
2N3420S
Microchip Technology

TRANS NPN 60V 3A TO39

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 5µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
Paket: -
Request a Quote
3 A
60 V
500mV @ 200mA, 2A
5µA
40 @ 1A, 2V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
HS2222A
Microchip Technology

NPN TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-