Page 238 - Transistoren - Bipolar (BJT) - Einzeln | Diskrete Halbleiterprodukte

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BCX55E6327HTSA1	Infineon Technologies	TRANS NPN 60V 1A SOT-89 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Power - Max: 2W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PG-SOT89	Paket: TO-243AA	Lager2.608	1A	60V	500mV @ 50mA, 500mA	100nA (ICBO)	40 @ 150mA, 2V	2W	100MHz	150°C (TJ)	Surface Mount	TO-243AA	PG-SOT89
JANTXV2N3251AUB	Microsemi Corporation	TRANS PNP 60V 0.2A TO-39 Transistor Type: PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 360mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	Paket: 3-SMD, No Lead	Lager4.992	200mA	60V	500mV @ 5mA, 50mA	10µA (ICBO)	100 @ 10mA, 1V	360mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
STX790A	STMicroelectronics	TRANS PNP 30V 3A TO92 Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 3A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	Paket: TO-226-3, TO-92-3 (TO-226AA)	Lager5.504	3A	30V	700mV @ 100mA, 3A	10µA (ICBO)	100 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
MPSA63RLRPG	ON Semiconductor	TRANS PNP DARL 30V 0.5A TO-92 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Power - Max: 625mW Frequency - Transition: 125MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Lager3.408	500mA	30V	1.5V @ 100µA, 100mA	100nA (ICBO)	10000 @ 100mA, 5V	625mW	125MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MJE210TG	ON Semiconductor	TRANS PNP 40V 5A TO225 Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V Power - Max: 15W Frequency - Transition: 65MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-225AA	Paket: TO-225AA, TO-126-3	Lager4.848	5A	40V	1.8V @ 1A, 5A	100nA (ICBO)	45 @ 2A, 1V	15W	65MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-225AA
BC237CG	ON Semiconductor	TRANS NPN 45V 0.1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Power - Max: 350mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	Paket: TO-226-3, TO-92-3 (TO-226AA)	Lager3.024	100mA	45V	600mV @ 5mA, 100mA	15nA	380 @ 2mA, 5V	350mW	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
FJX733RTF	Fairchild/ON Semiconductor	TRANS PNP 50V 0.15A SOT-323 Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V Power - Max: 200mW Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	Paket: SC-70, SOT-323	Lager2.176	150mA	50V	300mV @ 10mA, 100mA	100nA (ICBO)	40 @ 1mA, 6V	200mW	180MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
KSC2859YMTF	Fairchild/ON Semiconductor	TRANS NPN 30V 0.5A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Power - Max: 150mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	Paket: TO-236-3, SC-59, SOT-23-3	Lager323.400	500mA	30V	250mV @ 10mA, 100mA	100nA	120 @ 100mA, 1V	150mW	300MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
2N5366_D26Z	Fairchild/ON Semiconductor	TRANS PNP 40V 0.5A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1V @ 30mA, 300mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V Power - Max: 625mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Lager5.008	500mA	40V	1V @ 30mA, 300mA	100nA	100 @ 50mA, 1V	625mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2N5308_D26Z	Fairchild/ON Semiconductor	TRANS NPN DARL 40V 1.2A TO-92 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.2A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V Power - Max: 625mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Lager3.184	1.2A	40V	1.4V @ 200µA, 200mA	100nA (ICBO)	7000 @ 2mA, 5V	625mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2SD2227STPW	Rohm Semiconductor	TRANS NPN 50V 0.15A SPT Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 300nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 1200 @ 1mA, 5V Power - Max: 300mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-72 Formed Leads Supplier Device Package: SPT	Paket: SC-72 Formed Leads	Lager7.312	150mA	50V	300mV @ 5mA, 50mA	300nA (ICBO)	1200 @ 1mA, 5V	300mW	250MHz	150°C (TJ)	Through Hole	SC-72 Formed Leads	SPT
2SD2211T100R	Rohm Semiconductor	TRANS NPN 160V 1.5A SOT89 Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3	Paket: TO-243AA	Lager84.000	1.5A	160V	2V @ 100mA, 1A	1µA (ICBO)	180 @ 100mA, 5V	2W	80MHz	150°C (TJ)	Surface Mount	TO-243AA	MPT3
TS13002ACT A3G	TSC America Inc.	TRANSISTOR, NPN, 400V, 0.3A, 20A Transistor Type: NPN Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 20mA, 200mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V Power - Max: 600mW Frequency - Transition: 4MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92	Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Lager2.240	300mA	400V	1.5V @ 20mA, 200mA	1µA	25 @ 100mA, 10V	600mW	4MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92
SMMBT3904TT1G	ON Semiconductor	TRANS NPN 40V 0.2A SOT416 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 300mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75, SOT-416	Paket: SC-75, SOT-416	Lager7.024	200mA	40V	300mV @ 5mA, 50mA	-	100 @ 10mA, 1V	300mW	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	SC-75, SOT-416	SC-75, SOT-416
2SCR553PT100	Rohm Semiconductor	TRANS NPN 50V 2A SOT-89 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V Power - Max: 2W Frequency - Transition: 360MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3	Paket: TO-243AA	Lager36.000	2A	50V	350mV @ 35mA, 700mA	1µA (ICBO)	180 @ 50mA, 2V	2W	360MHz	150°C (TJ)	Surface Mount	TO-243AA	MPT3
DSC7004S0L	Panasonic Electronic Components	TRANS NPN 50V 2A MINIP3-F Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 200mA, 2V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MiniP3-F2-B	Paket: TO-243AA	Lager13.950	2A	50V	300mV @ 50mA, 1A	100nA (ICBO)	170 @ 200mA, 2V	1W	120MHz	150°C (TJ)	Surface Mount	TO-243AA	MiniP3-F2-B
2SB883	onsemi	POWER BIPOLAR TRANSISTOR, PNP Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 14mA, 7A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 7A, 2V Power - Max: 70 W Frequency - Transition: 20MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3PB	Paket: -	Request a Quote	15 A	60 V	1.5V @ 14mA, 7A	100µA (ICBO)	2000 @ 7A, 2V	70 W	20MHz	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3PB
MMBT2907A-TP-HF	Micro Commercial Co	Interface Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 350 mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	Paket: -	Request a Quote	600 mA	60 V	1.6V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	350 mW	200MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2N4233A	Microchip Technology	PNP TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
PBSS5350THR	Nexperia USA Inc.	PBSS5350TH/SOT23/TO-236AB Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 390mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3A, 2V Power - Max: 1.44 W Frequency - Transition: 100MHz Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB	Paket: -	Lager18.297	2 A	50 V	390mV @ 300mA, 3A	100nA (ICBO)	80 @ 3A, 2V	1.44 W	100MHz	175°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB
ASS8050-H-HF	Comchip Technology	TRANS NPN 25V 1.5A SOT23-3 Transistor Type: NPN Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 25 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Power - Max: 300 mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	Paket: -	Request a Quote	1.5 A	25 V	500mV @ 80mA, 800mA	100nA (ICBO)	200 @ 100mA, 1V	300 mW	100MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
2SC2236-Y-BP	Micro Commercial Co	TRANS NPN 30V 1.5A TO92MOD Transistor Type: NPN Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V Power - Max: 900 mW Frequency - Transition: 120MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Paket: -	Request a Quote	1.5 A	30 V	2V @ 30mA, 1.5A	100nA (ICBO)	160 @ 500mA, 2V	900 mW	120MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
NTE81	NTE Electronics, Inc	TRANS NPN 30V 0.5A TO99 Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 30mA, 300mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 625 mW Frequency - Transition: 250MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-99-6 Metal Can Supplier Device Package: TO-99	Paket: -	Request a Quote	500 mA	30 V	1.2V @ 30mA, 300mA	15nA	40 @ 150mA, 10V	625 mW	250MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-99-6 Metal Can	TO-99
JANTXV2N2219AP	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 800 mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	Paket: -	Request a Quote	800 mA	50 V	1.6V @ 50mA, 500mA	10nA	100 @ 150mA, 10V	800 mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
2N6281	Microchip Technology	NPN TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BC816-25R	Nexperia USA Inc.	BC816-25/SOT23/TO-236AB Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 300 mW Frequency - Transition: 100MHz Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB	Paket: -	Lager101.637	500 mA	80 V	400mV @ 50mA, 500mA	100nA (ICBO)	160 @ 100mA, 1V	300 mW	100MHz	175°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB
JANSM2N2221A	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	Paket: -	Request a Quote	800 mA	50 V	1V @ 50mA, 500mA	50nA	40 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
HAT1128R01-EL-E	Renesas Electronics Corporation	6A, 60V, 0.085OHM, 2-ELEMENT, P Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

BCX55E6327HTSA1

Infineon Technologies

TRANS NPN 60V 1A SOT-89

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 2W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PG-SOT89

Paket: TO-243AA

Lager2.608

1A

60V

500mV @ 50mA, 500mA

100nA (ICBO)

40 @ 150mA, 2V

2W

100MHz

150°C (TJ)

Surface Mount

TO-243AA

PG-SOT89

JANTXV2N3251AUB

Microsemi Corporation

TRANS PNP 60V 0.2A TO-39

Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 360mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

Paket: 3-SMD, No Lead

Lager4.992

200mA

60V

500mV @ 5mA, 50mA

10µA (ICBO)

100 @ 10mA, 1V

360mW

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

STX790A

STMicroelectronics

TRANS PNP 30V 3A TO92

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

Paket: TO-226-3, TO-92-3 (TO-226AA)

Lager5.504

3A

30V

700mV @ 100mA, 3A

10µA (ICBO)

100 @ 500mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

MPSA63RLRPG

ON Semiconductor

TRANS PNP DARL 30V 0.5A TO-92

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: 125MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Lager3.408

500mA

30V

1.5V @ 100µA, 100mA

100nA (ICBO)

10000 @ 100mA, 5V

625mW

125MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MJE210TG

ON Semiconductor

TRANS PNP 40V 5A TO225

Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Power - Max: 15W
Frequency - Transition: 65MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA

Paket: TO-225AA, TO-126-3

Lager4.848

5A

40V

1.8V @ 1A, 5A

100nA (ICBO)

45 @ 2A, 1V

15W

65MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-225AA

BC237CG

ON Semiconductor

TRANS NPN 45V 0.1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Power - Max: 350mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

Paket: TO-226-3, TO-92-3 (TO-226AA)

Lager3.024

100mA

45V

600mV @ 5mA, 100mA

15nA

380 @ 2mA, 5V

350mW

200MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

FJX733RTF

Fairchild/ON Semiconductor

TRANS PNP 50V 0.15A SOT-323

Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
Power - Max: 200mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

Paket: SC-70, SOT-323

Lager2.176

150mA

50V

300mV @ 10mA, 100mA

100nA (ICBO)

40 @ 1mA, 6V

200mW

180MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

KSC2859YMTF

Fairchild/ON Semiconductor

TRANS NPN 30V 0.5A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Power - Max: 150mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

Lager323.400

500mA

30V

250mV @ 10mA, 100mA

100nA

120 @ 100mA, 1V

150mW

300MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

2N5366_D26Z

Fairchild/ON Semiconductor

TRANS PNP 40V 0.5A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Lager5.008

500mA

40V

1V @ 30mA, 300mA

100nA

100 @ 50mA, 1V

625mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2N5308_D26Z

Fairchild/ON Semiconductor

TRANS NPN DARL 40V 1.2A TO-92

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1.2A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Lager3.184

1.2A

40V

1.4V @ 200µA, 200mA

100nA (ICBO)

7000 @ 2mA, 5V

625mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2SD2227STPW

Rohm Semiconductor

TRANS NPN 50V 0.15A SPT

Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 300nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1200 @ 1mA, 5V
Power - Max: 300mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Supplier Device Package: SPT

Paket: SC-72 Formed Leads

Lager7.312

150mA

50V

300mV @ 5mA, 50mA

300nA (ICBO)

1200 @ 1mA, 5V

300mW

250MHz

150°C (TJ)

Through Hole

SC-72 Formed Leads

SPT

2SD2211T100R

Rohm Semiconductor

TRANS NPN 160V 1.5A SOT89

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 5V
Power - Max: 2W
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3

Paket: TO-243AA

Lager84.000

1.5A

160V

2V @ 100mA, 1A

1µA (ICBO)

180 @ 100mA, 5V

2W

80MHz

150°C (TJ)

Surface Mount

TO-243AA

MPT3

TS13002ACT A3G

TSC America Inc.

TRANSISTOR, NPN, 400V, 0.3A, 20A

Transistor Type: NPN
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 20mA, 200mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
Power - Max: 600mW
Frequency - Transition: 4MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92

Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Lager2.240

300mA

400V

1.5V @ 20mA, 200mA

1µA

25 @ 100mA, 10V

600mW

4MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92

SMMBT3904TT1G

ON Semiconductor

TRANS NPN 40V 0.2A SOT416

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 300mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75, SOT-416

Paket: SC-75, SOT-416

Lager7.024

200mA

40V

300mV @ 5mA, 50mA

-

100 @ 10mA, 1V

300mW

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

SC-75, SOT-416

2SCR553PT100

Rohm Semiconductor

TRANS NPN 50V 2A SOT-89

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Power - Max: 2W
Frequency - Transition: 360MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3

Paket: TO-243AA

Lager36.000

2A

50V

350mV @ 35mA, 700mA

1µA (ICBO)

180 @ 50mA, 2V

2W

360MHz

150°C (TJ)

Surface Mount

TO-243AA

MPT3

DSC7004S0L

Panasonic Electronic Components

TRANS NPN 50V 2A MINIP3-F

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 200mA, 2V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MiniP3-F2-B

Paket: TO-243AA

Lager13.950

2A

50V

300mV @ 50mA, 1A

100nA (ICBO)

170 @ 200mA, 2V

1W

120MHz

150°C (TJ)

Surface Mount

TO-243AA

MiniP3-F2-B

2SB883

onsemi

POWER BIPOLAR TRANSISTOR, PNP

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 14mA, 7A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 7A, 2V
Power - Max: 70 W
Frequency - Transition: 20MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PB

Paket: -

Request a Quote

15 A

60 V

1.5V @ 14mA, 7A

100µA (ICBO)

2000 @ 7A, 2V

70 W

20MHz

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3PB

MMBT2907A-TP-HF

Micro Commercial Co

Interface

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 350 mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

Paket: -

Request a Quote

600 mA

60 V

1.6V @ 50mA, 500mA

50nA

100 @ 150mA, 10V

350 mW

200MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

2N4233A

Microchip Technology

PNP TRANSISTOR

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

PBSS5350THR

Nexperia USA Inc.

PBSS5350TH/SOT23/TO-236AB

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 390mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3A, 2V
Power - Max: 1.44 W
Frequency - Transition: 100MHz
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB

Paket: -

Lager18.297

2 A

50 V

390mV @ 300mA, 3A

100nA (ICBO)

80 @ 3A, 2V

1.44 W

100MHz

175°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB

ASS8050-H-HF

Comchip Technology

TRANS NPN 25V 1.5A SOT23-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Power - Max: 300 mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

Paket: -

Request a Quote

1.5 A

25 V

500mV @ 80mA, 800mA

100nA (ICBO)

200 @ 100mA, 1V

300 mW

100MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

2SC2236-Y-BP

Micro Commercial Co

TRANS NPN 30V 1.5A TO92MOD

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Power - Max: 900 mW
Frequency - Transition: 120MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

Paket: -

Request a Quote

1.5 A

30 V

2V @ 30mA, 1.5A

100nA (ICBO)

160 @ 500mA, 2V

900 mW

120MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

NTE81

NTE Electronics, Inc

TRANS NPN 30V 0.5A TO99

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 30mA, 300mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 625 mW
Frequency - Transition: 250MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-99-6 Metal Can
Supplier Device Package: TO-99

Paket: -

Request a Quote

500 mA

30 V

1.2V @ 30mA, 300mA

15nA

40 @ 150mA, 10V

625 mW

250MHz

-65°C ~ 200°C (TJ)

Through Hole

TO-99-6 Metal Can

TO-99

JANTXV2N2219AP

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 800 mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

Paket: -

Request a Quote

800 mA

50 V

1.6V @ 50mA, 500mA

10nA

100 @ 150mA, 10V

800 mW

-

-55°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

2N6281

Microchip Technology

NPN TRANSISTOR

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

BC816-25R

Nexperia USA Inc.

BC816-25/SOT23/TO-236AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 300 mW
Frequency - Transition: 100MHz
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB

Paket: -

Lager101.637

500 mA

80 V

400mV @ 50mA, 500mA

100nA (ICBO)

160 @ 100mA, 1V

300 mW

100MHz

175°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB

JANSM2N2221A

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

Paket: -

Request a Quote

800 mA

50 V

1V @ 50mA, 500mA

50nA

40 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

HAT1128R01-EL-E

Renesas Electronics Corporation

6A, 60V, 0.085OHM, 2-ELEMENT, P

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-