Page 315 - Transistoren - Bipolar (BJT) - Einzeln | Diskrete Halbleiterprodukte | Heisener Electronics
Kontaktieren Sie uns
SalesDept@heisener.com +86-755-83210559 ext. 807
Login/Registrieren
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Wagen 0

Transistoren - Bipolar (BJT) - Einzeln

Aufzeichnungen 20.307
Page  315/726
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BC 850BF E6327
Infineon Technologies

TRANS NPN 45V 0.1A SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager2.224
100mA
45V
600mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
250mW
250MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
JANTXV2N7369
Microsemi Corporation

TRANS PNP 80V 10A TO254

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 5mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V
  • Power - Max: 115W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA (Straight Leads)
  • Supplier Device Package: TO-254AA
Paket: TO-254-3, TO-254AA (Straight Leads)
Lager5.744
10A
80V
1V @ 500mA, 5A
5mA
30 @ 3A, 2V
115W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-254-3, TO-254AA (Straight Leads)
TO-254AA
hot ZTX651STOA
Diodes Incorporated

TRANS NPN 60V 2A E-LINE

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1W
  • Frequency - Transition: 175MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
Paket: E-Line-3, Formed Leads
Lager12.708
2A
60V
500mV @ 200mA, 2A
100nA (ICBO)
-
1W
175MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
BC516_D74Z
Fairchild/ON Semiconductor

TRANS PNP DARL 30V 1A TO-92

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V
  • Power - Max: 625mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager2.640
1A
30V
1V @ 100µA, 100mA
100nA (ICBO)
30000 @ 20mA, 2V
625mW
200MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BC558TF
Fairchild/ON Semiconductor

TRANS PNP 30V 0.1A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager5.024
100mA
30V
650mV @ 5mA, 100mA
15nA (ICBO)
110 @ 2mA, 5V
500mW
150MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BC337BU
Fairchild/ON Semiconductor

TRANS NPN 45V 0.8A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA)
Lager4.080
800mA
45V
700mV @ 50mA, 500mA
100nA
100 @ 100mA, 1V
625mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot JAN2N3716
Microsemi Corporation

TRANS NPN 80V 10A TO-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V
  • Power - Max: 5W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3
  • Supplier Device Package: TO-3 (TO-204AA)
Paket: TO-3
Lager25.692
10A
80V
2.5V @ 2A, 10A
1mA
30 @ 3A, 2V
5W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-3
TO-3 (TO-204AA)
hot 2SD2211T100Q
Rohm Semiconductor

TRANS NPN 160V 1.5A SOT89

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: MPT3
Paket: TO-243AA
Lager155.520
1.5A
160V
2V @ 100mA, 1A
1µA (ICBO)
120 @ 100mA, 5V
2W
80MHz
150°C (TJ)
Surface Mount
TO-243AA
MPT3
hot DCP69-25-13
Diodes Incorporated

TRANS PNP 20V 1A SOT-223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
  • Power - Max: 1W
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
Paket: TO-261-4, TO-261AA
Lager439.776
1A
20V
500mV @ 100mA, 1A
100nA (ICBO)
160 @ 500mA, 1V
1W
200MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
BUJ302AD,118
WeEn Semiconductors

TRANS NPN 400V 4A DPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3.5A
  • Current - Collector Cutoff (Max): 250mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 800mA, 3V
  • Power - Max: 80W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager5.088
4A
400V
1.5V @ 1A, 3.5A
250mA
25 @ 800mA, 3V
80W
-
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
hot KSH340TF
Fairchild/ON Semiconductor

TRANS NPN 300V 0.5A DPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
  • Power - Max: 1.56W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager4.704
500mA
300V
-
100µA
30 @ 50mA, 10V
1.56W
-
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
hot ZXTN619MATA
Diodes Incorporated

TRANS NPN 50V 4A 3-DFN

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
  • Current - Collector Cutoff (Max): 25nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
  • Power - Max: 3W
  • Frequency - Transition: 165MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-UDFN
  • Supplier Device Package: DFN2020B-3
Paket: 3-UDFN
Lager567.588
4A
50V
320mV @ 200mA, 4A
25nA
100 @ 2A, 2V
3W
165MHz
-55°C ~ 150°C (TJ)
Surface Mount
3-UDFN
DFN2020B-3
2SC3784
onsemi

POWER BIPOLAR TRANSISTOR NPN

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.2 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 500mA, 5V
  • Power - Max: 1.2 W
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126LP
Paket: -
Request a Quote
1.2 A
50 V
1.5V @ 2mA, 500mA
10µA (ICBO)
1000 @ 500mA, 5V
1.2 W
180MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126LP
2SA2044-E
onsemi

9A, 30V, PNP

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 9 A
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 340mV @ 200mA, 4A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 1 W
  • Frequency - Transition: 290MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: TP
Paket: -
Request a Quote
9 A
30 V
340mV @ 200mA, 4A
100nA (ICBO)
200 @ 500mA, 2V
1 W
290MHz
150°C (TJ)
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
TP
2N6730-APP-TIN-LEAD
Central Semiconductor Corp

TRANS PNP 100V 2A TO237

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 1V
  • Power - Max: 1 W
  • Frequency - Transition: 500MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-237AA
  • Supplier Device Package: TO-237
Paket: -
Lager5.895
2 A
100 V
500mV @ 10mA, 250mA
100nA (ICBO)
80 @ 50mA, 1V
1 W
500MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-237AA
TO-237
BCV47QTC
Diodes Incorporated

GENERAL PURPOSE TRANSISTOR SOT23

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
  • Power - Max: 310 mW
  • Frequency - Transition: 170MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
Paket: -
Lager30.000
500 mA
60 V
1V @ 100µA, 100mA
100nA (ICBO)
10000 @ 100mA, 5V
310 mW
170MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
JAN2N3250AUB-TR
Microchip Technology

TRANS PNP 60V 0.2A UB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
  • Power - Max: 360 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UB
Paket: -
Request a Quote
200 mA
60 V
500mV @ 5mA, 50mA
10µA (ICBO)
50 @ 10mA, 1V
360 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
4-SMD, No Lead
UB
2SC2668-R-AP
Micro Commercial Co

TRANS NPN 30V 0.02A TO92S

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 20 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
  • Power - Max: 200 mW
  • Frequency - Transition: 550MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
  • Supplier Device Package: TO-92S
Paket: -
Request a Quote
20 mA
30 V
-
500nA (ICBO)
40 @ 1mA, 6V
200 mW
550MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Short Body (Formed Leads)
TO-92S
2SD2633
Sanken Electric USA Inc.

TRANS NPN 150V 8A TO220F

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 8 A
  • Voltage - Collector Emitter Breakdown (Max): 150 V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 6mA, 6A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 6A, 2V
  • Power - Max: 2 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
Paket: -
Request a Quote
8 A
150 V
2V @ 6mA, 6A
100µA (ICBO)
2000 @ 6A, 2V
2 W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
BC54-16PA-QX
Nexperia USA Inc.

BC54-16PA-Q/SOT1061/HUSON3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 420 mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-PowerUDFN
  • Supplier Device Package: 3-HUSON (2x2)
Paket: -
Request a Quote
1 A
45 V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
420 mW
180MHz
150°C (TJ)
Surface Mount
3-PowerUDFN
3-HUSON (2x2)
2N4150
Microchip Technology

NPN TRANSISTOR

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10 A
  • Voltage - Collector Emitter Breakdown (Max): 70 V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5AA
Paket: -
Request a Quote
10 A
70 V
2.5V @ 1A, 10A
10µA
50 @ 1A, 5V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5AA
2N5015
Microsemi Corporation

TRANS NPN 1000V 0.2A TO5

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200 mA
  • Voltage - Collector Emitter Breakdown (Max): 1000 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5AA
Paket: -
Request a Quote
200 mA
1000 V
-
10nA (ICBO)
30 @ 20mA, 10V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5AA
2SD669-D-BP
Micro Commercial Co

TRANS NPN 120V 1.5A TO126

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5 A
  • Voltage - Collector Emitter Breakdown (Max): 120 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 150mA, 5V
  • Power - Max: 1 W
  • Frequency - Transition: 140MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
Paket: -
Request a Quote
1.5 A
120 V
1V @ 50mA, 500mA
10µA (ICBO)
160 @ 150mA, 5V
1 W
140MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
JANTXV2N6251
Microchip Technology

TRANS NPN 350V 0.001A TO3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 mA
  • Voltage - Collector Emitter Breakdown (Max): 350 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.67A, 10A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 10A, 3V
  • Power - Max: 5.5 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
Paket: -
Request a Quote
1 mA
350 V
1.5V @ 1.67A, 10A
1mA
6 @ 10A, 3V
5.5 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
JANS2N3867S
Microchip Technology

TRANS PNP 40V 0.003A TO39

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3 mA
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
Paket: -
Request a Quote
3 mA
40 V
1.5V @ 250mA, 2.5A
100µA (ICBO)
40 @ 1.5A, 2V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
SZT1004T1G
onsemi

SS SOT223 GP XSTR SPCL TR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SC3458L
Sanyo

2SC3458 - NPN TRIPLE DIFFUSED PL

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 800 V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
  • Power - Max: 80 W
  • Frequency - Transition: 15MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PB
Paket: -
Request a Quote
3 A
800 V
2V @ 300mA, 1.5A
10µA (ICBO)
15 @ 200mA, 5V
80 W
15MHz
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PB
2SA1371D-AE
onsemi

TRANS

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-