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Transistoren - Bipolar (BJT) - Einzeln

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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BC 817-25 B5003
Infineon Technologies

TRANS NPN 45V 0.5A SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
  • Power - Max: 330mW
  • Frequency - Transition: 170MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager3.664
500mA
45V
700mV @ 50mA, 500mA
100nA (ICBO)
160 @ 100mA, 1V
330mW
170MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
2SD2257,KEHINQ(J
Toshiba Semiconductor and Storage

TRANS NPN 3A 100V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
Paket: TO-220-3 Full Pack
Lager3.360
3A
100V
1.5V @ 1.5mA, 1.5A
10µA (ICBO)
2000 @ 2A, 2V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SD1835T-AA
ON Semiconductor

TRANS NPN 50V 2A NP

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
  • Power - Max: 750mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: 3-NP
Paket: TO-226-3, TO-92-3 (TO-226AA)
Lager4.224
2A
50V
400mV @ 50mA, 1A
100nA (ICBO)
100 @ 100mA, 2V
750mW
150MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
3-NP
JAN2N5416
Microsemi Corporation

TRANS PNP 300V 1A TO5

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
  • Power - Max: 750mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
Paket: TO-205AA, TO-5-3 Metal Can
Lager6.480
1A
300V
2V @ 5mA, 50mA
1mA
30 @ 50mA, 10V
750mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5
JANTX2N3749
Microsemi Corporation

TRANS NPN 80V 5A TO111

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 20µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Stud Mount
  • Package / Case: TO-111-4, Stud
  • Supplier Device Package: TO-111
Paket: TO-111-4, Stud
Lager2.128
5A
80V
1.5V @ 500mA, 5A
20µA
40 @ 1A, 2V
2W
-
-65°C ~ 200°C (TJ)
Stud Mount
TO-111-4, Stud
TO-111
hot PCP1103-P-TD-H
ON Semiconductor

TRANS PNP 30V 1.5A PCP

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 375mV @ 15mA, 750mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
  • Power - Max: 1.3W
  • Frequency - Transition: 450MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PCP
Paket: TO-243AA
Lager372.000
1.5A
30V
375mV @ 15mA, 750mA
100nA (ICBO)
200 @ 100mA, 2V
1.3W
450MHz
150°C (TJ)
Surface Mount
TO-243AA
PCP
TIP131G
ON Semiconductor

TRANS NPN DARL 80V 8A TO-220AB

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 30mA, 6A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
Paket: TO-220-3
Lager7.728
8A
80V
3V @ 30mA, 6A
500µA
1000 @ 4A, 4V
2W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
BC879,112
NXP

TRANS NPN DARL 80V 1A TO-92

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
  • Power - Max: 830mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA)
Lager4.512
1A
80V
1.8V @ 1mA, 1A
50nA
2000 @ 500mA, 10V
830mW
200MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
KS3302TA
Fairchild/ON Semiconductor

TRANS NPN 40V 0.2A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager5.264
200mA
40V
150mV @ 10mA, 100mA
-
-
-
-
-
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BCX19TC
Diodes Incorporated

TRANS NPN 45V 0.5A SOT23-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 330mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager7.664
500mA
45V
620mV @ 50mA, 500mA
100nA (ICBO)
100 @ 100mA, 1V
330mW
200MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
2SD16330P
Panasonic Electronic Components

TRANS NPN DARL 100V 5A TO-220F

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 3A, 3V
  • Power - Max: 2W
  • Frequency - Transition: 15MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F-A1
Paket: TO-220-3 Full Pack
Lager2.016
5A
100V
1.5V @ 3mA, 3A
100µA
5000 @ 3A, 3V
2W
15MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F-A1
CZT5401 BK
Central Semiconductor Corp

TRANS PNP 150V 0.6A SOT223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 300MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
Paket: TO-261-4, TO-261AA
Lager5.456
600mA
150V
500mV @ 5mA, 50mA
50nA (ICBO)
60 @ 10mA, 5V
2W
300MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
2SD2015
Sanken

TRANS NPN DARL 120V 4A TO220F

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 2A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
  • Power - Max: 25W
  • Frequency - Transition: 40MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
Paket: TO-220-3 Full Pack
Lager4.160
4A
120V
1.5V @ 2mA, 2A
10µA (ICBO)
2000 @ 2A, 2V
25W
40MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
hot BD677
STMicroelectronics

TRANS NPN DARL 60V 4A SOT-32

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
  • Power - Max: 40W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: SOT-32-3
Paket: TO-225AA, TO-126-3
Lager90.552
4A
60V
2.5V @ 30mA, 1.5A
500µA
750 @ 1.5A, 3V
40W
-
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
SOT-32-3
hot MJD44H11TM
Fairchild/ON Semiconductor

TRANS NPN 80V 8A DPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
  • Power - Max: 1.75W
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-3
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager24.000
8A
80V
1V @ 400mA, 8A
10µA
40 @ 4A, 1V
1.75W
50MHz
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252-3
BST61,115
Nexperia USA Inc.

TRANS PNP DARL 60V 1A SOT89

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
  • Power - Max: 1.3W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
Paket: TO-243AA
Lager4.256
1A
60V
1.3V @ 500µA, 500mA
50nA
2000 @ 500mA, 10V
1.3W
200MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
hot 2N5209
Central Semiconductor Corp

TRANS NPN 50V 0.05A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100µA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: 30MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
Paket: TO-226-3, TO-92-3 (TO-226AA)
Lager5.056
50mA
50V
700mV @ 1mA, 10mA
50nA (ICBO)
100 @ 100µA, 5V
350mW
30MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
BC849C,235
Nexperia USA Inc.

TRANS NPN 30V 0.1A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
Paket: TO-236-3, SC-59, SOT-23-3
Lager3.488
100mA
30V
600mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
250mW
100MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BC556BTA
Fairchild/ON Semiconductor

TRANS PNP 65V 0.1A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager29.094
100mA
65V
650mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
500mW
150MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
2N2222AUB-TR
Microchip Technology

TRANS NPN 50V 0.8A 3SMD

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
Paket: -
Request a Quote
800 mA
50 V
1V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
2N498
Microchip Technology

NPN SILICON TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
BC857BW-QX
Nexperia USA Inc.

TRANS NPN 45V 0.1A SOT323

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 200 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
Paket: -
Request a Quote
100 mA
45 V
400mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
200 mW
100MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
MMBT495
Good-Ark Semiconductor

TRANSISTOR, NPN, 170V, 1A, SOT-2

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 150 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
  • Power - Max: 250 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
Paket: -
Lager26.940
1 A
150 V
300mV @ 50mA, 500mA
100nA
100 @ 250mA, 10V
250 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
2SD1153
Sanyo

NPN DARLINGTON TRANSISTOR

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1.5 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 500mA, 2V
  • Power - Max: 900 mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: 3-MP
Paket: -
Request a Quote
1.5 A
50 V
1.5V @ 500µA, 500mA
100nA (ICBO)
4000 @ 500mA, 2V
900 mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
3-MP
BC856BW-AU_R1_000A1
Panjit International Inc.

TRANS PNP 65V 0.1A SOT323

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 65 V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 250 mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
Paket: -
Lager16.500
100 mA
65 V
650mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
250 mW
200MHz
-55°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
JANSD2N2906AUBC
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UBC
Paket: -
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600 mA
60 V
1.6V @ 50mA, 500mA
50nA
40 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UBC
MMBTA05Q-13-F
Diodes Incorporated

TRANS NPN 60V 0.5A SOT23-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 310 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
Paket: -
Lager30.000
500 mA
60 V
250mV @ 10mA, 100mA
100nA
100 @ 100mA, 1V
310 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
2SCR642PHZGT100
Rohm Semiconductor

TRANS NPN 30V 3A SOT89

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 2A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 500 mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
Paket: -
Lager1.551
3 A
30 V
400mV @ 100mA, 2A
1µA (ICBO)
200 @ 500mA, 2V
500 mW
250MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89